STPS1L20M_05 [STMICROELECTRONICS]
LOW DROP POWER SCHOTTKY RECTIFIER; 电力低压降肖特基整流器
| 型号： | STPS1L20M_05 |
| 厂家： | 
ST |
| 描述： | LOW DROP POWER SCHOTTKY RECTIFIER |
| 文件： | 总6页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS1L20M
®
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
VRRM
1 A
20 V
A
Tj (max)
VF(max)
150°C
0.37 V
C
FEATURES AND BENEFITS
STmite
(DO216-AA)
■
■
■
■
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop for higher efficiency
and extented battery life
■
■
Low thermal resistance
Avalanche capability specified
Table 2: Order Code
Part Number
Marking
STPS1L20M
1L2
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
Table 3: Absolute Ratings (limiting values)
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
Value
Unit
V
20
IF(RMS)
IF(AV)
IFSM
PARM
Tstg
RMS forward voltage
2
1
A
Tc = 140°C δ = 0.5
Average forward current
A
tp = 10 ms sinusoidal
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
50
A
tp = 1µs Tj = 25°C
1400
-65 to + 150
150
W
°C
°C
V/µs
Tj
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)
dV/dt
10000
dPtot
dTj
1
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink
Rth(j – a)
November 2005
REV. 4
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STPS1L20M
Table 4: Thermal Resistance
Symbol
Parameter
Value
20
Unit
°C/W
°C/W
Rth(j-c)
Rth(j-l)
Junction to case
*
Junction to ambient
250
* Mounted with minimum recommended pad size, PC board FR4.
Table 5: Static Electrical Characteristics
Symbol
Parameter
Tests conditions
Min.
Typ
0.015 0.075
0.9 4.5
0.005 0.035
0.45 2.5
0.003 0.025
Max.
Unit
Tj = 25°C
VR = VRRM
VR = 10V
Tj = 85°C
Tj = 25°C
Tj = 85°C
Tj = 25°C
Tj = 85°C
Tj = 25°C
Tj = 85°C
Tj = 25°C
Tj = 85°C
IR *
Reverse leakage current
mA
VR = 5V
0.3
1.6
0.38
0.32
0.46
0.42
0.43
0.37
0.53
0.49
IF = 1A
IF = 3A
VF *
Forward voltage drop
V
Pulse test:
* tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.31 x I
+ 0.06 I
F(AV)
F (RMS)
Figure 1: Conduction losses versus average
current
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
P
(W)
F(AV)
I
(A)
F(AV)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Rth(j-a)=Rth(j-c)
δ = 0.2
δ = 0.5
δ = 0.1
δ = 0.05
δ = 1
Rth(j-a)=270°C/W
T
I
(A)
T
(°C)
amb
F(AV)
tp
=tp/T
δ
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5 0.6
0.7
0.8
0.9
1.0
1.1
1.2
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STPS1L20M
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0.01
T (°C)
j
t (µs)
p
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
I (A)
M
Z
/R
th(j-c) th(j-c)
25
20
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
15
δ = 0.5
TC=25°C
TC=75°C
10
δ = 0.2
T
TC=125°C
5
IM
δ = 0.1
Single pulse
t
t(s)
δ=0.5
t (s)
p
tp
1.E-01
=tp/T
δ
0
1.E-04
1.E-03
1.E-02
1.E-03
1.E-02
1.E-01
1.E+00
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
Figure 8: Reverse leakage current versus
junction temperature (typical values)
I (mA)
R
I (mA)
R
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
Tj=150°C
Tj=125°C
VR=20V
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
V (V)
R
T (°C)
j
0
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
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STPS1L20M
Figure 9: Junction capacitance versus reverse
voltage applied (typical values)
Figure 10: Forward voltage drop versus
forward current
I (A)
FM
C(pF)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=85°C
(maximum values)
Tj=85°C
(typical values)
100
Tj=25°C
(maximum values)
V (V)
FM
V (V)
R
10
1
10
100
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)
R
(°C/W)
th(j-a)
250
200
150
100
50
S(mm²)
0
0
20
40
60
80
100
120
140
160
180
200
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STPS1L20M
Inches
Figure 12: STmite Package Mechanical Data
DIMENSIONS
Millimeters
REF.
Min. Typ. Max. Min. Typ. Max.
L3
A
0.85 1.00 1.15 0.033 0.039 0.045
D
A1 -0.05
0.05 -0.002
0.65 0.016
1.00 0.027
0.25 0.004
0.002
0.025
0.039
0.010
b
b2
c
0.40
0.70
0.10
b2
b
H
D
1.75 1.90 2.05 0.069 0.007 0.081
1.75 1.90 2.05 0.069 0.007 0.081
3.60 3.75 3.90 0.142 0.148 0.154
0.50 0.63 0.80 0.020 0.025 0.031
1.20 1.35 1.50 0.047 0.053 0.059
L2
E
E
L
R
H
L
C
A
L2
L3
A1
0° to 6°
R1
0.50
ref
0.019
ref
R
0.07
0.07
0.003
0.003
R1
Figure 13: Foot Print Dimensions (in millimeters)
1.82
1.38
1.10
0.75
2.03
0.50
0.71
Table 6: Ordering Information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS1L20M
1L2
STmite
15.5 mg
12000
Tape & reel
Table 7: Revision History
Date
Revision
Description of Changes
Jul-2003
2A
Last update.
STmite package dimensions reference A1 change: from
blank (min) to -0.05mm and from 0.10 (max) to 0.05mm.
13-Sep-2004
29-Nov-2005
3
4
Page 2, table 5: conduction losses evaluation values
changed:
2
. From P = 0.34 x IF(AV) + 0.07 IF (RMS)
2
. To P = 0.31 x IF(AV) + 0.06 IF (RMS)
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STPS1L20M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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