STPS5H100UFN [STMICROELECTRONICS]

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STPS5H100UFN
型号: STPS5H100UFN
厂家: ST    ST
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高压 高电压电源
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STPS5H100  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
Table 1: Main Product Characteristics  
IF(AV)  
VRRM  
Tj  
5 A  
K
100 V  
175°C  
0.61 V  
A
VF(max)  
NC  
DPAK  
FEATURES AND BENEFITS  
Negligible switching losses  
High junction temperature capability  
Low leakage current  
Good trade off between leakage current and  
forward voltage drop  
Avalanche specification  
Table 2: Order Codes  
Part Number  
Marking  
S5H100  
S5H100  
STPS5H100B  
STPS5H100B-TR  
DESCRIPTION  
High voltage Schottky barrier rectifier designed for  
high frequency miniature Switched Mode Power  
Supplies such as adaptators and on board DC to  
DC converters.  
Table 3: Absolute Maximum (limiting values)  
Symbol  
Parameter  
Value  
Unit  
VRRM  
Repetitive peak reverse voltage  
RMS forward voltage  
100  
V
IF(RMS)  
IF(AV)  
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
10  
5
A
A
Average forward current  
Tc = 165°C δ = 0.5  
tp = 10ms sinusoidal  
tp = 2µs F = 1KHz  
tp = 100µs square  
tp = 1µs Tj = 25°C  
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
75  
1
A
A
2
A
7200  
W
°C  
°C  
V/µs  
-65 to + 175  
175  
Tj  
Maximum operating junction temperature  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
dPtot  
dTj  
1
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
February 2006  
REV. 8  
1/5  
STPS5H100  
Table 4: Thermal Parameters  
Symbol  
Parameter  
Value  
Unit  
Rth(j-c) Junction to case  
2.5  
°C/W  
Table 5: Static Electrical Characteristics  
Symbol  
Parameter  
Tests conditions  
Min.  
Typ  
1.3  
Max.  
Unit  
µA  
Tj = 25°C  
3.5  
4.5  
IR *  
VR = VRRM  
IF = 5A  
Reverse leakage current  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
mA  
0.73  
0.61  
0.85  
0.71  
0.57  
0.66  
VF **  
Forward voltage drop  
V
IF = 10A  
Pulse test:  
* tp = 5 ms, δ < 2%  
** tp = 380 µs, δ < 2%  
2
To evaluate the conduction losses use the following equation: P = 0.51 x I  
+ 0.02 I  
F(AV)  
F (RMS)  
Figure 1: Average forward power dissipation  
versus average forward current  
Figure 2: Average forward current versus  
ambient temperature (δ = 0.5)  
IF(av)(A)  
PF(av)(W)  
6
4.0  
δ = 0.2  
Rth(j-a)=Rth(j-c)  
δ = 0.5  
δ = 0.1  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5
4
δ = 0.05  
δ = 1  
Rth(j-a)=80°C/W  
3
T
2
T
1
tp  
=tp/T  
δ
tp  
=tp/T  
IF(av) (A)  
δ
Tamb(°C)  
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
0
20  
40  
60  
80 100 120 140 160 180  
Figure 3: Normalized avalanche power  
derating versus pulse duration  
Figure 4: Normalized avalanche power  
derating versus junction temperature  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
2/5  
STPS5H100  
Figure 5: Non repetitive surge peak forward  
current versus overload duration (maximum  
values)  
Figure 6: Relative variation of thermal  
impedance junction to case versus pulse  
duration  
IM(A)  
Zth(j-c)/Rth(j-c)  
120  
110  
100  
90  
1.0  
0.8  
80  
δ = 0.5  
0.6  
70  
60  
50  
40  
30  
20  
10  
0
Tc=50°C  
δ = 0.2  
0.4  
Tc=75°C  
δ = 0.1  
T
IM  
Tc=125°C  
0.2  
Single pulse  
t
t(s)  
tp(s)  
δ=0.5  
tp  
=tp/T  
δ
0.0  
1E-3  
1E-2  
1E-1  
1E+0  
1E-3  
1E-2  
1E-1  
1E+0  
Figure 7: Reverse leakage current versus  
reverse voltage applied  
Figure 8: Junction capacitance versus reverse  
voltage applied (typical values)  
IR(µA)  
C(pF)  
5E+3  
1000  
F=1MHz  
Tj=25°C  
1E+3  
Tj=125°C  
1E+2  
1E+1  
1E+0  
100  
Tj=25°C  
1E-1  
VR(V)  
VR(V)  
10  
1E-2  
1
10  
100  
0
10 20 30 40 50 60 70 80 90 100  
Figure 9: Forward voltage drop versus forward  
current (maximum values)  
Figure 10: Thermal resistance junction to  
ambient versus copper surface under tab  
(Epoxy printed circuit board, copper  
thickness: 35µm)  
IFM(A)  
Rth(j-a) (°C/W)  
50.0  
100  
90  
80  
70  
60  
50  
40  
30  
20  
Tj=125°C  
10.0  
Tj=25°C  
1.0  
10  
0
S(Cu) (cm²)  
8 10 12 14 16 18 20  
VFM(V)  
0.1  
0
2
4
6
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
3/5  
STPS5H100  
Figure 11: DPAK Package Mechanical Data  
DIMENSIONS  
Millimeters Inches  
Min. Min.  
REF.  
Max  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
Max.  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
E
A
A
A1  
A2  
B
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.018  
0.236  
0.251  
0.173  
0.368  
B2  
C2  
L2  
D
R
H
L4  
A1  
R
B
G
C
A2  
0.80 typ.  
0.031 typ.  
0.60 MIN.  
0.60  
0°  
1.00  
8°  
0.023  
0°  
0.039  
8°  
V2  
Figure 12: Foot Print Dimensions (in millimeters)  
1.6  
6.7  
3
3
2.3  
2.3  
6.7  
1.6  
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These  
packages have a Lead-free second level interconnect . The category of second level interconnect is  
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The  
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an  
ST trademark. ECOPACK specifications are available at: www.st.com.  
4/5  
STPS5H100  
Table 6: Ordering Information  
Ordering type  
STPS5H100B  
Marking  
Package  
Weight  
Base qty  
75  
Delivery mode  
Tube  
S5H100  
S5H100  
DPAK  
0.30 g  
STPS5H100B-TR  
2500  
Tape & reel  
Cooling method: by conduction (C)  
Table 7: Revision History  
Date  
Revision  
Description of Changes  
Jul-2003  
6B  
7
Last issue.  
03-Nov-2005  
15-Feb-2006  
DPAK Foot Print dimensions updated.  
ECOPACK statement added.  
8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2006 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
5/5  

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