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STW42N65M5 [STMICROELECTRONICS]

N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247; N沟道650 V， 0.070 I© ，十三条MDmeshâ ?? ¢在I2PAK V功率MOSFET ， TO- 220 ， TO- 220FP ， D2PAK和TO -247
STW42N65M5
型号： STW42N65M5
厂家： ST    ST
描述：

N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
N沟道650 V， 0.070 I© ，十三条MDmeshâ ?? ¢在I2PAK V功率MOSFET ， TO- 220 ， TO- 220FP ， D2PAK和TO -247
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STx42N65M5  
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET  
in I2PAK, TO-220, TO-220FP, D2PAK and TO-247  
Features  
VDSS  
TJmax  
@
RDS(on)  
max  
Type  
ID  
3
3
3
2
1
STB42N65M5  
STF42N65M5  
STI42N65M5  
STP42N65M5  
STW42N65M5  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.079 Ω  
33 A  
2
1
1
< 0.079 Ω 33 A (1)  
TO-220  
D²PAK  
TO-220FP  
< 0.079 Ω  
< 0.079 Ω  
< 0.079 Ω  
33 A  
33 A  
33 A  
1. Limited only by maximum temperature allowed  
3
3
2
2
1
1
■ TO-220 worldwide best R  
DS(on)  
I²PAK  
TO-247  
■ Higher V  
rating  
DSS  
■ High dv/dt capability  
■ Excellent switching performance  
■ Easy to drive  
Figure 1.  
Internal schematic diagram  
■ 100% avalanche tested  
$ꢅꢆꢇ  
Application  
■ Switching applications  
'ꢅꢁꢇ  
Description  
MDmesh™ V is a revolutionary Power MOSFET  
technology based on an innovative proprietary  
vertical process, which is combined with  
STMicroelectronics’ well-known PowerMESH™  
horizontal layout structure. The resulting product  
has extremely low on-resistance, which is  
unmatched among silicon-based Power  
MOSFETs, making it especially suitable for  
applications which require superior power density  
and outstanding efficiencies.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
D²PAK  
Packaging  
STB42N65M5  
STF42N65M5  
STI42N65M5  
STP42N65M5  
STW42N65M5  
42N65M5  
42N65M5  
42N65M5  
42N65M5  
42N65M5  
Tape and reel  
Tube  
TO-220FP  
I²PAK  
Tube  
TO-220  
TO-247  
Tube  
Tube  
June 2009  
Doc ID 15317 Rev 3  
1/18  
www.st.com  
18  
Contents  
STx42N65M5  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
2/18  
Doc ID 15317 Rev 3  
STx42N65M5  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
TO-220, TO-247  
D²PAK, I²PAK  
TO-220FP  
VGS  
ID  
Gate- source voltage  
25  
V
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
33  
33 (1)  
20.8 (1)  
132 (1)  
40  
A
A
ID  
20.8  
132  
190  
(2)  
IDM  
A
PTOT  
IAR  
Total dissipation at TC = 25 °C  
Max current during repetitive or single pulse  
W
11  
A
avalanche (pulse width limited by TJMAX  
)
Single pulse avalanche energy  
EAS  
950  
15  
mJ  
(starting Tj = 25°C, ID = IAR, VDD = 50V)  
dv/dt (3) Peak diode recovery voltage slope  
V/ns  
Insulation withstand voltage (RMS) from all  
three leads to external heat sink  
VISO  
--  
2500  
V
(t = 1 s; TC = 25 °C)  
Tstg  
Tj  
Storage temperature  
-55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1. Limited only by maximum temperature allowed  
2. Pulse width limited by safe operating area  
3. ISD ≤ 33 A, di/dt  
≤ 400 A/µs, VPeak < V(BR)DSS  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
D²PAK I²PAK TO-220 TO-247 TO-220FP  
Unit  
Thermal resistance junction-  
case max  
Rthj-case  
Rthj-amb  
Rthj-pcb  
Tl  
0.66  
62.5  
3.1  
62.5  
--  
°C/W  
°C/W  
°C/W  
°C  
Thermal resistance junction-  
ambient max  
--  
50  
--  
Thermal resistance junction-pcb  
max  
30  
--  
--  
Maximum lead temperature for  
soldering purpose  
300  
Doc ID 15317 Rev 3  
3/18  
Electrical characteristics  
STx42N65M5  
2
Electrical characteristics  
(T = 25 °C unless otherwise specified)  
C
Table 4.  
Symbol  
On /off states  
Parameter  
Test conditions  
ID = 1 mA, VGS = 0  
DS = Max rating  
Min.  
Typ.  
Max. Unit  
Drain-source  
breakdown voltage  
V(BR)DSS  
650  
V
Zero gate voltage  
V
1
µA  
µA  
IDSS  
drain current (VGS = 0) VDS = Max rating, TC=125 °C  
100  
Gate-body leakage  
IGSS  
VGS  
=
25 V  
100  
5
nA  
V
current (VDS = 0)  
VGS(th)  
RDS(on  
Gate threshold voltage VDS = VGS, ID = 250 µA  
Static drain-source on  
3
4
VGS = 10 V, ID = 16.5 A  
0.070 0.079  
Ω
resistance  
Table 5.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Input capacitance  
Ciss  
Coss  
Crss  
4650  
110  
3.2  
pF  
VDS = 100 V, f = 1 MHz,  
VGS = 0  
Output capacitance  
-
-
-
pF  
pF  
Reverse transfer  
capacitance  
Equivalent output  
capacitance energy  
related  
VGS = 0, VDS = 0 to 80%  
V(BR)DSS  
(1)  
Co(er)  
-
100  
pF  
Equivalent output  
capacitance time  
related  
VGS = 0, VDS = 0 to 80%  
V(BR)DSS  
(2)  
Co(tr)  
-
-
285  
1.1  
-
-
pF  
Intrinsic gate  
resistance  
RG  
f = 1 MHz open drain  
Ω
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 520 V, ID = 16.5 A,  
VGS = 10 V  
100  
26  
nC  
nC  
nC  
-
-
(see Figure 20)  
38  
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0  
to 80% VDSS  
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0  
to 80% VDSS  
4/18  
Doc ID 15317 Rev 3  
STx42N65M5  
Electrical characteristics  
Table 6.  
Switching times  
Parameter  
Symbol  
Test conditions  
Min.  
Typ.  
Max Unit  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
61  
24  
65  
13  
ns  
VDD = 400 V, ID = 20 A,  
RG = 4.7 Ω, VGS = 10 V  
(see Figure 19)  
ns  
-
-
Turn-off-delay time  
Fall time  
ns  
ns  
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
ISD  
Source-drain current  
33  
A
A
-
-
(1)  
ISDM  
Source-drain current (pulsed)  
132  
(2)  
VSD  
Forward on voltage  
ISD = 33 A, VGS = 0  
1.5  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
400  
7
ns  
µC  
A
ISD = 33 A, di/dt = 100 A/µs  
Qrr  
-
-
VDD = 100 V (see Figure 24)  
IRRM  
35  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 33 A, di/dt = 100 A/µs  
VDD = 100 V, Tj = 150 °C  
(see Figure 24)  
532  
10  
ns  
µC  
A
Qrr  
IRRM  
38  
1. Pulse width limited by safe operating area  
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 15317 Rev 3  
5/18  
Electrical characteristics  
STx42N65M5  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area for TO-220,  
D²PAK, I²PAK  
Figure 3.  
Thermal impedance for TO-220,  
D²PAK, I²PAK  
AM01565v1  
I
D
(A)  
100  
10µs  
10  
100µs  
1ms  
10ms  
1
0.1  
10  
VDS(V)  
0.1  
1
100  
Figure 4.  
Safe operating area for TO-247  
Figure 5.  
Thermal impedance for TO-247  
AM03246v1  
I
D
(A)  
100  
10µs  
10  
100µs  
1ms  
10ms  
1
0.1  
10  
VDS(V)  
0.1  
1
100  
Figure 6.  
Safe operating area for TO-220FP  
Figure 7.  
Thermal impedance for TO-220FP  
AM01566v1  
I
D
(A)  
100  
s
i
a
re  
a
s
x R  
a
10  
1
10µs  
tion in thi  
y m  
a
b
100µs  
1ms  
Oper  
Limited  
10ms  
0.1  
0.01  
10  
VDS(V)  
0.1  
1
100  
6/18  
Doc ID 15317 Rev 3  
STx42N65M5  
Figure 8.  
Electrical characteristics  
Output characteristics  
Figure 9.  
Transfer characteristics  
AM01589v1  
AM01590v1  
ID  
(A)  
ID  
(A)  
80  
70  
60  
80  
VGS=10V  
8V  
70  
VDS=20V  
7.5V  
60  
50  
50  
40  
7V  
40  
30  
30  
6.5V  
6V  
20  
10  
20  
10  
0
0
0
5
3
6
7
8
9
VGS(V)  
VDS(V)  
10  
15  
4
5
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance  
AM01569v1  
AM01568v1  
RDS(on)  
VGS  
(V)  
VDS  
(V)  
(Ω)  
VGS  
0.076  
500  
400  
300  
200  
100  
10  
8
VGS=10V  
VDS  
0.074  
0.072  
0.070  
0.068  
0.066  
0.064  
VDD=520V  
6
VGS=10V  
ID=16.5A  
4
2
0
0
20  
30  
10  
40  
80  
120  
100  
Qg(nC)  
60  
0
ID(A)  
0
20  
Figure 12. Capacitance variations  
Figure 13. Output capacitance stored energy  
AM01570v1  
AM03231v1  
C
Eoss  
(pF)  
(µJ)  
10000  
1000  
100  
16  
Ciss  
14  
12  
10  
8
Coss  
6
10  
1
4
Crss  
2
0
0
100  
1
10  
200  
400 500  
600 VDS(V)  
VDS(V)  
300  
100  
Doc ID 15317 Rev 3  
7/18  
 
 
 
Electrical characteristics  
STx42N65M5  
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs  
vs temperature temperature  
AM01571v1  
AM01573v1  
VGS(th)  
RDS(on)  
(norm)  
(norm)  
I
D
= 16.5 A  
VGS= 10 V  
1.1  
2.0  
ID = 250 µA  
1.0  
0.9  
0.8  
1.5  
1.0  
0.5  
0
0.7  
0.6  
-50  
-50  
TJ(°C)  
TJ(°C)  
0
50  
0
100  
50  
100  
Figure 16. Source-drain diode forward  
characteristics  
Figure 17. Normalized B  
vs temperature  
VDSS  
AM01574v1  
AM01572v1  
V
SD  
(V)  
BVDSS  
(norm)  
TJ=-25°C  
1.0  
0.9  
1.05  
1.00  
0.8  
0.7  
0.6  
T
J=25°C  
0.5  
0.4  
ID = 1 mA  
T
J=150°C  
0.95  
0.90  
0.3  
0.2  
0
-50  
5
10  
15 20  
25  
30  
I
SD(A)  
0
50  
TJ(°C)  
100  
Figure 18. Switching losses vs gate resistance  
(1)  
AM01575v1  
E
(µJ)  
Eon  
ID=20A  
VDD=400V  
L=50µH  
600  
500  
400  
300  
Eoff  
200  
100  
0
20  
30  
40 45  
35  
RG(Ω)  
5
10  
15  
25  
0
1. Eon including reverse recovery of a SiC diode  
8/18  
Doc ID 15317 Rev 3  
 
 
STx42N65M5  
Test circuits  
3
Test circuits  
Figure 19. Switching times test circuit for  
resistive load  
Figure 20. Gate charge test circuit  
VDD  
12V  
47kΩ  
1kΩ  
100nF  
2200  
3.3  
µF  
RL  
µF  
IG=CONST  
VDD  
100Ω  
Vi=20V=VGMAX  
D.U.T.  
VG  
VD  
RG  
VGS  
2200  
µF  
D.U.T.  
2.7kΩ  
47kΩ  
PW  
1kΩ  
PW  
AM01468v1  
AM01469v1  
Figure 21. Test circuit for inductive load  
switching and diode recovery times  
Figure 22. Unclamped inductive load test  
circuit  
L
A
A
A
B
D
FAST  
DIODE  
L=100µH  
VD  
G
2200  
µF  
D.U.T.  
B
3.3  
µF  
VDD  
S
3.3  
µF  
1000  
µF  
B
VDD  
25  
Ω
ID  
D
G
RG  
S
Vi  
D.U.T.  
Pw  
AM01470v1  
AM01471v1  
Figure 23. Unclamped inductive waveform  
Figure 24. Switching time waveform  
ton  
toff  
tdoff  
V(BR)DSS  
tr  
tf  
tdon  
VD  
90%  
10%  
90%  
IDM  
10%  
VDS  
ID  
0
0
VDD  
VDD  
90%  
VGS  
10%  
AM01472v1  
AM01473v1  
Doc ID 15317 Rev 3  
9/18  
Package mechanical data  
STx42N65M5  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com. ECOPACK  
is an ST trademark.  
10/18  
Doc ID 15317 Rev 3  
STx42N65M5  
Package mechanical data  
TO-220 mechanical data  
mm  
inch  
Dim  
Min  
Typ  
Max  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
∅P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
Doc ID 15317 Rev 3  
11/18  
Package mechanical data  
STx42N65M5  
TO-247 mechanical data  
mm.  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
b
4.85  
5.15  
2.20  
1.0  
2.60  
1.40  
b1  
b2  
c
2.0  
2.40  
3.0  
3.40  
0.40  
19.85  
15.45  
0.80  
D
20.15  
15.75  
E
e
5.45  
18.50  
5.50  
L
14.20  
14.80  
4.30  
L1  
L2  
øP  
øR  
S
3.70  
3.55  
3.65  
4.50  
5.50  
12/18  
Doc ID 15317 Rev 3  
STx42N65M5  
Package mechanical data  
TO-220FP mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
B
4.4  
2.5  
4.6  
2.7  
2.75  
0.7  
1
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.70  
1.5  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Dia  
16  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
16.4  
9.3  
3
3.2  
L7  
E
A
B
D
Dia  
L5  
L6  
F2  
F1  
F
G
H
G1  
L4  
L2  
L3  
7012510_Rev_J  
Doc ID 15317 Rev 3  
13/18  
Package mechanical data  
STx42N65M5  
I²PAK (TO-262) mechanical data  
mm  
inch  
Typ  
Dim  
Min  
Typ  
Max  
Min  
Max  
A
A1  
b
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.194  
0.393  
0.511  
0.137  
0.050  
0.181  
0.107  
0.034  
0.066  
0.027  
0.052  
0.368  
0.106  
0.202  
0.410  
0.551  
0.154  
0.055  
b1  
c
c2  
D
e
e1  
E
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
14/18  
Doc ID 15317 Rev 3  
STx42N65M5  
Package mechanical data  
D²PAK (TO-263) mechanical data  
mm  
inch  
Dim  
Min  
Typ  
Max  
Min  
Typ  
Max  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
0.173  
0.001  
0.027  
0.045  
0.017  
0.048  
0.352  
0.295  
0.394  
0.334  
0.181  
0.009  
0.037  
0.067  
0.024  
0.053  
0.368  
b2  
c
c2  
D
D1  
E
10.40  
0.409  
E1  
e
8.50  
2.54  
0.1  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
0.192  
0.590  
0.099  
0.090  
0.05  
0.208  
0.624  
0.106  
0.110  
0.055  
0.069  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.051  
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
0079457_M  
Doc ID 15317 Rev 3  
15/18  
Packaging mechanical data  
STx42N65M5  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8 13.2 0.504 0.520  
20.2 0795  
24.4 26.4 0.960 1.039  
100 3.937  
0.059  
30.4  
1.197  
BASE QTY  
BULK QTY  
TAPE MECHANICAL DATA  
1000  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
16/18  
Doc ID 15317 Rev 3  
STx42N65M5  
Revision history  
6
Revision history  
Table 8.  
Date  
Document revision history  
Revision  
Changes  
16-Jan-2009  
15-May-2009  
12-Jun-2009  
1
2
3
First release  
Updated figures 9, 10, 11 and 17  
Figure 15 has been updated  
Doc ID 15317 Rev 3  
17/18  
STx42N65M5  
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