STX13003G-AP [STMICROELECTRONICS]
High voltage fast-switching NPN power transistor;型号: | STX13003G-AP |
厂家: | ST |
描述: | High voltage fast-switching NPN power transistor 晶体 开关 小信号双极晶体管 高压 |
文件: | 总7页 (文件大小:238K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STX13003
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
ST13003 SILICON IN TO-92 PACKAGE
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
TO-92
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX13003 is designed for use in compact
fluorescent lamp application.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Value
700
Unit
V
V
V
VCEO
400
VEBO
Emitter-Base Voltage
V(BR)EBO
(IC = 0, IB = 0.5 A, tp < 10µs, Tj < 150oC)
Collector Current
IC
ICM
IB
1
3
A
A
Collector Peak Current (tp < 5 ms)
Base Current
0.5
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp < 5 ms)
1.5
A
o
Total Dissipation at TC = 25 C
1.5
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/7
April 2003
STX13003
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
83.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = 700V
VCE = 700V
1
5
mA
mA
Tj = 125oC
V(BR)EBO Emitter-Base
Breakdown Voltage
IE = 10 mA
9
18
V
(IC = 0)
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
L = 25 mH
400
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 1.5 A
IB = 0.1 A
IB = 0.25 A
IB = 0.5 A
0.5
1
3
V
V
V
VBE(sat)
hFE
Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IB = 0.1 A
IB = 0.25 A
1
1.2
V
V
DC Current Gain
IC = 0.5 A
IC = 1 A
VCE = 2 V
VCE = 2 V
8
5
35
25
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
tr
ts
tf
IC = 1 A
IB1 = 0.2 A
Tp= 25 µs
VCC = 125 V
IB2 = -0.2 A
1
4
0.7
µs
µs
µs
INDUCTIVE LOAD
Storage Time
IC = 1 A
VBE = -5 V
Vclamp = 300 V
IB1 = 0.2 A
L = 50 mH
ts
0.8
µs
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
Safe Operating Area
Output Characteristics
2/7
STX13003
Reverse Biased SOA
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
STX13003
Inductive Load Fall Time
Inductive Load Storage Time
4/7
STX13003
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
STX13003
TO-92 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.32
TYP.
MAX.
4.95
MIN.
0.170
0.014
0.175
0.130
0.095
0.045
0.500
0.085
0.045
0.016
4 degree
MAX.
0.195
0.020
0.194
0.155
0.105
0.055
0.609
0.094
0.059
0.022
6 degree
A
b
0.36
0.51
D
E
4.45
4.95
3.30
3.94
e
2.41
2.67
e1
L
1.14
1.40
12.70
2.16
15.49
2.41
R
S1
W
V
1.14
1.52
0.41
0.56
4 degree
6 degree
6/7
STX13003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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7/7
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