STX13003G-AP [STMICROELECTRONICS]

High voltage fast-switching NPN power transistor;
STX13003G-AP
型号: STX13003G-AP
厂家: ST    ST
描述:

High voltage fast-switching NPN power transistor

晶体 开关 小信号双极晶体管 高压
文件: 总7页 (文件大小:238K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STX13003  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
ST13003 SILICON IN TO-92 PACKAGE  
MEDIUM VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
DESCRIPTION  
TO-92  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The STX13003 is designed for use in compact  
fluorescent lamp application.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Value  
700  
Unit  
V
V
V
VCEO  
400  
VEBO  
Emitter-Base Voltage  
V(BR)EBO  
(IC = 0, IB = 0.5 A, tp < 10µs, Tj < 150oC)  
Collector Current  
IC  
ICM  
IB  
1
3
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
0.5  
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
1.5  
A
o
Total Dissipation at TC = 25 C  
1.5  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
April 2003  
STX13003  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Max  
83.3  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ICEV  
Collector Cut-off  
Current (VBE = -1.5V)  
VCE = 700V  
VCE = 700V  
1
5
mA  
mA  
Tj = 125oC  
V(BR)EBO Emitter-Base  
Breakdown Voltage  
IE = 10 mA  
9
18  
V
(IC = 0)  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
(IB = 0)  
IC = 10 mA  
L = 25 mH  
400  
V
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
IC = 0.5 A  
IC = 1 A  
IC = 1.5 A  
IB = 0.1 A  
IB = 0.25 A  
IB = 0.5 A  
0.5  
1
3
V
V
V
VBE(sat)  
hFE  
Base-Emitter  
Saturation Voltage  
IC = 0.5 A  
IC = 1 A  
IB = 0.1 A  
IB = 0.25 A  
1
1.2  
V
V
DC Current Gain  
IC = 0.5 A  
IC = 1 A  
VCE = 2 V  
VCE = 2 V  
8
5
35  
25  
RESISTIVE LOAD  
Rise Time  
Storage Time  
Fall Time  
tr  
ts  
tf  
IC = 1 A  
IB1 = 0.2 A  
Tp= 25 µs  
VCC = 125 V  
IB2 = -0.2 A  
1
4
0.7  
µs  
µs  
µs  
INDUCTIVE LOAD  
Storage Time  
IC = 1 A  
VBE = -5 V  
Vclamp = 300 V  
IB1 = 0.2 A  
L = 50 mH  
ts  
0.8  
µs  
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.  
Safe Operating Area  
Output Characteristics  
2/7  
STX13003  
Reverse Biased SOA  
Derating Curve  
DC Current Gain  
DC Current Gain  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
3/7  
STX13003  
Inductive Load Fall Time  
Inductive Load Storage Time  
4/7  
STX13003  
Figure 1: Inductive Load Switching Test Circuits.  
1) Fast electronic switch  
2) Non-inductive Resistor  
3) Fast recovery rectifier  
Figure 2: Resistive Load Switching Test Circuits.  
1) Fast electronic switch  
2) Non-inductive Resistor  
5/7  
STX13003  
TO-92 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.32  
TYP.  
MAX.  
4.95  
MIN.  
0.170  
0.014  
0.175  
0.130  
0.095  
0.045  
0.500  
0.085  
0.045  
0.016  
4 degree  
MAX.  
0.195  
0.020  
0.194  
0.155  
0.105  
0.055  
0.609  
0.094  
0.059  
0.022  
6 degree  
A
b
0.36  
0.51  
D
E
4.45  
4.95  
3.30  
3.94  
e
2.41  
2.67  
e1  
L
1.14  
1.40  
12.70  
2.16  
15.49  
2.41  
R
S1  
W
V
1.14  
1.52  
0.41  
0.56  
4 degree  
6 degree  
6/7  
STX13003  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  

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