STX1F10 [STMICROELECTRONICS]
1500mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT PACKAGE-3;型号: | STX1F10 |
厂家: | ST |
描述: | 1500mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT PACKAGE-3 晶体管 |
文件: | 总9页 (文件大小:300K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STX1F10
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Application
■ Battery charger
TO-92
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
Fgure 1.
Internal schematic diagram
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during breakdown condition, without using
the transil protection usually cessary in typical
converters for lamp ballas
Table 1.
Order code
STX1F10
Device summary
Marking
Package
Packaging
X1F10
TO-92
Box
June 2009
Doc ID 15854 Rev 1
1/9
www.st.com
9
Electrical ratings
STX1F10
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
Unit
VCES
VCEO
VEBO
IC
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
980
V
V
400
15
V
1.5
A
ICM
IB
Collector peak current (tP < 5 ms)
Base current
3
0.5
A
A
IBM
Ptot
Tstg
TJ
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
1
A
2.8
W
°C
°C
-65 to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
RthJC
Thermal resistance junction-case max
44.6
°C/W
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Doc ID 15854 Rev 1
STX1F10
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
CE = 980 V
Min. Typ. Max. Unit
Collector cut-off current
(VBE =0)
V
50
µA
ICES
VCE = 980 V; TC =125 °C
0.5
mA
Collector cut-off current
(IB =0)
ICEO
VCE = 400 V
250
µA
V
Emitter-base breakdown
voltage (IC = 0)
V(BR)EBO
IE = 1 mA
15
Collector-emitter
sustaining voltage (IB = 0)
(1)
VCEO(sus)
IC = 10 mA
40
V
IC = 0.3 A
IC = 1 A
IB = 60 mA
IB = 0.2 A
0.15
0.3
0.5
1
V
V
Collector-emitter
saturation voltage
(1)
VCE(sat)
Base-emitter saturation
voltage
(1)
VBE(sat)
IC = 1 A
IB = 0.2 A
1.1
1.5
V
I5µA
IC 0.45 A
IC = 1 A
VCE = 2 V
VCE = 5 V
VCE = 5 V
15
30
14
hFE
DC current gain
40
20
61
28
Resistive load
Storage time
Fall time
VCC = 125 V
IC = 1 A
ts
tf
IB(on) = -IB(off) = 200 mA
2.5
µs
ns
tp = 300 µs VBE(off) = - 5 V
350
1. Pulsed duran = 300 µs, duty cycle ≤ 1.5%.
2.1
Typical characteristic
Figure 2.
Safe operating area
Figure 3.
Derating curve
Doc ID 15854 Rev 1
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Electrical characteristics
Figure 4.
STX1F10
Output characteristics
Figure 5.
Reverse biased safe
operating area
Figure 6.
DC current gain (V = 3 V)
Figure 7.
DC current gain (V = 5 V)
CE
CE
Figure 8.
Bae-emitter saturation
oltage
Figure 9.
Collector-emitter saturation
voltage
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Doc ID 15854 Rev 1
STX1F10
Electrical characteristics
Figure 10. Resistive load switching time Figure 11. Resistive load switching time
(turn-on, h = 5)
(turn-on, h = 10)
FE
FE
Figure 12. Resistive load switching time Figure 13. Resistive load switching time
(turn-off, h = 5) (turn-ofh = 10)
FE
FE
2.2
Test circuits
Figure 14. Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Doc ID 15854 Rev 1
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Package mechanical data
STX1F10
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
6/9
Doc ID 15854 Rev 1
STX1F10
Package mechanical data
TO-92 bulk shipment mechanical data
mm.
TYP
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
A
b
D
E
e
e1
L
R
S1
W
V
o
5
0102782 D
Doc ID 15854 Rev 1
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Revision history
STX1F10
4
Revision history
Table 5.
Date
18-Jun-2009
Document revision history
Revision
Changes
1
Initial release.
8/9
Doc ID 15854 Rev 1
STX1F10
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