TSD2931-10 [STMICROELECTRONICS]

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs; 射频功率晶体管HF / VHF / UHF N沟道MOSFET


型号：	TSD2931-10
厂家：	ST
描述：	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs 射频功率晶体管HF / VHF / UHF N沟道MOSFET 晶体晶体管射频
文件：	总10页 (文件大小：95K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SD2931-10

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

ADVANCE DATA

GOLD METALLIZATION

EXCELLENT THERMAL STABILITY

COMMON SOURCE CONFIGURATION

POUT = 150W MIN. WITH 14 dB gain @175

MHz

THERMALLY ENHANCED PACKAGING FOR

LOWER JUNCTION TEMPERATURES

DESCRIPTION

M174

The SD2931-10 is a gold metallized N-Channel

MOS field-effect RF power transistor. Being

electrically identical to the standard SD2931

MOSFET, it is intended for use in 50V dc large

signal applicationsup to 230 MHz.

epoxy sealed

ORDER CODE

BRANDING

SD2931-10

TSD2931-10

The SD2931-10 is mechanical compatible to the

SD2931 but offers in addition a better thermal

capability (25 % lower thermal resistance),

representing the best-in-class transistors for ISM

applications.

PIN CONNECTION

1. Drain

3.Gate

2. Source

4. Source

ABSOLUTE MAXIMUM RATINGS (T_case= 25 ^oC)

Symbol

Parameter

Value

Unit

V_(BR)DSSDrain Source Voltage

125

V_DGR

V_GS

I_D

Drain-Gate Voltage (R_GS= 1MΩ)

Gate-Source Voltage

Drain Current

±20

P_DISS

T_j

Power Dissipation

389

^oC

Max. Operating Junction Temperature

Storage Temperature

200

T_STG

-65 to 150

THERMAL DATA

R_th(j-c)

R_th(c-s)

Junction-Case Thermal Resistance

Case-Heatsink Thermal Resistance

0.45

0.2

^oC/W

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

1/10

March 2000

SD2931-10

ELECTRICAL SPECIFICATION (T_case= 25 ^oC)

STATIC

Symbol

Parameter

I_DS= 100 mA

V_DS= 50 V

V_DS= 0 V

Min.

Typ.

Max.

Unit

V_(BR)DSSV_GS= 0V

125

I_DSS

I_GSS

V_GS= 0V

µA

V_GS= 20V

V_{GS(Q) *}VDS = 10V

V_DS(ON)V_GS= 10V

I_D= 250 mA

I_D= 10 A

2.0

5.0

3.0

G_FS

C_ISS

C_OSS

C_RSS

V_DS= 10V

V_GS= 0V

I_D= 5 A

mho

V_DS= 50 V

f = 1 MHz

480

190

* V_GS(Q)sorted with alpha/numeric code marked on unit.

REF. 7165489C

DYNAMIC

Symbol

P_OUT

G_PS

Parameter

Min.

150

Typ.

Max.

Unit

f = 175 MHz V_DD= 50 V

I_DQ= 250 mA

P_out= 150 W

I_DQ= 250 mA

η_D

Load

10:1

VSWR

Mismatch All Phase Angles

IMPEDANCE DATA

V_GSSORTS

2.0 - 2.1

2.1 - 2.2

3.5 - 3.6

3.6 - 3.7

3.7 - 3.8

3.8 - 3.9

3.9 - 4.0

4.0 - 4.1

4.1 - 4.2

4.2 - 4.3

4.3 - 4.4

4.4 - 4.5

4.5 - 4.6

4.6 - 4.7

4.7 - 4.8

4.8 - 4.9

4.9 - 5.0

2.2 - 2.3

2.3 - 2.4

2.4 - 2.5

2.5 - 2.6

2.6 - 2.7

2.7 - 2.8

2.8 - 2.9

2.9 - 3.0

3.0 - 3.1

3.1 - 3.2

3.2 - 3.3

3.3 - 3.4

3.4 - 3.5

FREQ.

30 MHz

175 MHz

Z_IN(Ω)

Z_DL(Ω)

1.7 - j 5.7

1.2 - j 2.0

6.8 + j 0.9

2.0 + j 2.4

2/10

SD2931-10

TYPICAL PERFORMANCE

Capacitance vs Drain-Source Voltage

Drain Current vs Gate Voltage

10000

Tc=-20 °C

Tc=+25 °C

1000

f =1MHz

Ciss

Tc=+80 °C

Coss

100

Crss

2.5

3.5

4.5

5.5

VGS, GATE-SOURCE VOLTAGE (V)

VDS, DRAIN-SOURCE VOLTAGE (V)

Gate-SourceVoltages vs CaseTemperature

Maximum Thermal Resistance vs Case

Temperature

0.6

0.56

0.52

0.48

0.44

1.1

Id =9A

Id =7A

Id =10A

1.05

Id =5A

Id =11A

0.95

0.9

0.85

0.8

Id =4A

Id =2A

Id =1A

Id =.25A

Id =.1A

-25

100

Tc, CASE TEMPERATURE (°C)

DC Safe OperatingArea

100

(1)

100

1000

Vds(V)

ds(on)

(1) Current in this area may belimited by R

3/10

SD2931-10

TYPICAL PERFORMANCE (175 MHz)

Output Power vs Input Power

OutputPower vs Input Power

250

270

240

210

180

150

120

Pout =50V

Tc=-20 °C

Tc =+25 °C

200

150

100

Pout =40V

Tc =+80 °C

Vdd=50V

f=175Mhz

Idq=250mA

f=175Mhz

250

Pin, INPUT POWER(W)

Power Gain vs Output Power

Efficencyvs Output Power

Vdd=50V

Idq=250mA

f=175Mhz

Vdd=50V

Idq=250mA

f=175Mhz

100

150

200

250

100

150

200

Pout, OUTPUT POWER (W)

Output Power vs Supply Voltage

OutputPower vs Gate Voltage

250

200

150

100

200

Tc =-20 °C

Pin =10W

Tc =+25 °C

150

Pin =5W

Tc =+80 °C

Pin =2.5W

100

Idq=250mA

f=175Mhz

-3

-2

-1

Vdd,Drain Voltage(V)

VGS, GATE-SOURCE VOLTAGE(V)

4/10

SD2931-10

175 MHz Test Circuit Schematic (Production Test Circuit)

V_G

+50V

REF. 1021579C

Note : All dimensions in inches

175 MHz Test Circuit ComponentPart List

FB1

4:1 Transformer, 25 ohm Flexible Coax .090 OD 6 ” Long

1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6 ” Long

Toroid X2, 0.5” OD .312” ID 850u 2 Turns

FB2, FB3

FB4

VK200

Shield Bead, 1” OD 0.5” ID 850u 3 Turns

1/4Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12 ” Long

0.062” Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55

PCB

R1, R3

C1, C11

470 ohm 1W Chip Resistor

360 ohm 1/2W Resistor

470 pF ATC Chip Cap

43 pF ATC Chip Cap

C10

20K ohm 10 Turn Potentiometer

560 ohm 1W Resistor

30 pF ATC Chip Cap

91 pF ATC Chip Cap

C3, C8, C9 Arco 404, 12-65 pF

C12, C15

C13, C14

C16, C17

C18

1200 pF ATC Chip Cap

0.01 uF / 500V Chip Cap

10 uF 63V Electrolytic Capacitor

Arco 423, 16-100 pF

120 pF ATC Chip Cap

0.01 uF ATC Chip Cap

5/10

SD2931-10

175 MHz Test Circuit Photomaster

175 MHz Test Circuit

6/10

SD2931-10

TYPICAL PERFORMANCE (30 MHz)

Output Power vs Input Power

Power Gain vs OutputPower

250

28.5

Vdd = 50V

200

150

100

27.5

Vdd = 40V

f = 30 MHz

VDD = 50 V

IDQ= 250 mA

f = 30 MHz

IDQ = 250 mA

26.5

0.01 0.06

0.11 0.16

0.21 0.25 0.3013 0.35 0.40

100

150

200

Pin, INPUT POWER (W)

Pout, OUTPUT POWER (W)

Efficency vs Output Power

Output Power vs SupplyVoltage

200

150

100

Pin=.31 W

Pin=.22 W

Pin=.13 W

f= 30 MHz

VDD = 50 V

IDQ = 250 mA

f = 30 MHz

IDQ = 250 mA

100

150

200

VDD, SUPPLY VOLTAGE(V)

Pout, OUTPUT POWER (W)

Output Power vs Gate Voltage

200

T= +25 °C

T= -20 °C

150

100

T= +80 °C

VDD = 50 V

IDQ = 250 mA

f = 30 MHz

Pin = Constant

VGS GATE-SOURCE VOLTAGE (V)

7/10

SD2931-10

30 MHz Test Circuit Schematic (Engineering Test Circuit)

VG +

+50V

30 MHz Test Circuit Component Part List

9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15” Long

1:4 Transformer, 50 ohm Flexible Coax .225 OD 15” Long

Toroid, 1.7” OD .30” ID 220u4 Turns

Surface Mount EMI Shield Bead

Toroid, 1.7” OD .300” ID 220u 3 Turns

FB1

FB2

FB3

RFC1

PCB

Toroid, 0.5” OD 0.30” ID, 125u 4 turns 12 awg wire

0.062” Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55

C1, C4, C6, C7, C8, 0.01 uF ATC Chip Cap

C9, C11, C12, C13 0.01 uF ATC Chip Cap

470 pF ATC Chip Cap

C10

C14

10 uF 63V Electrolytic Capacitor

100 uF 63V Electrolytic Capacitor

680 ohm 3W Wirewound Resistor

C2, C3

R1, R3

750 pF ATC Chip Cap

1K ohm 1W Chip Resistor

8/10

SD2931-10

M174 (.500 DIA 4L N/HERM W/FLG) MECHANICAL DATA

inch

TYP.

DIM.

MIN.

TYP.

MAX.

MIN.

MAX.

5.56

5.84

0.219

0.230

3.18

0.125

6.22

6.48

0.245

0.720

0.255

0.730

18.28

18.54

24.64

12.57

0.08

24.89

12.83

0.18

0.970

0.495

0.003

0.083

0.150

0.980

0.505

0.007

0.118

0.175

0.280

1.050

0.130

2.11

3.00

3.81

4.45

7.11

25.53

3.05

26.67

3.30

1.005

0.120

1011000D

9/10

Controlling Dimension in Inches

SD2931-10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products

are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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10/10

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