VNP10N06FI [STMICROELECTRONICS]
ISO HIGH SIDE SMART POWER SOLID STATE RELAY; ISO高侧智能功率固态继电器
| 型号： | VNP10N06FI |
| 厂家： | 
ST |
| 描述： | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| 文件： | 总14页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VND10N06/VND10N06-1
VNP10N06FI/K10N06FM
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
Vclamp
RDS(on )
Ilim
VND10N06
60 V
60 V
60 V
60 V
0.3 Ω
0.3 Ω
0.3 Ω
0.3 Ω
10 A
10 A
10 A
10 A
VND10N06-1
VNP10N06FI
VNK10N06FM
3
3
1
2
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
1
DPAK
TO-252
IPAK
TO-251
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
LOGIC LEVEL INPUT THRESHOLD
ESD PROTECTION
SCHMITT TRIGGER ON INPUT
HIGH NOISE IMMUNITY
DESCRIPTION
3
2
The VND10N06, VND10N06-1, VNP10N06FI and
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
1
ISOWATT220
SOT82-FM
BLOCK DIAGRAM (*)
( ) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.
October 1997
1/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
DPAK
IPAK
ISOWATT220 SOT82-FM
VDS
Vin
Iin
Drain-source Voltage (Vin = 0)
Input Voltage
Internally Clamped
Internally Clamped
± 20
V
V
Input Current
mA
A
ID
Drain Current
Internally Limited
-15
IR
Reverse DC Output Current
A
Vesd
Electrostatic Discharge (C= 100 pF,
4000
V
R=1.5 KΩ)
Ptot
Tj
Total Dissipation at Tc = 25 oC
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
35
27
9
W
oC
oC
oC
Internally Limited
Internally Limited
-55 to 150
Tc
Tst g
THERMAL DATA
DPAK/IPAK ISOWATT220 SOT82-FM
Rthj-case Thermal Resistance Junction-case
Max
3.5
4.5
14
oC/W
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max
100
62.5
100
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
ID = 200 mA Vin = 0
Min.
Typ.
Max.
Unit
VCLAMP
Drain-source Clamp
Voltage
50
60
70
V
VIL
VIH
Input Low Level
Voltage
ID = 100 µA VDS = 16 V
1.5
V
V
Input High Level
Voltage
RL = 27 Ω VDD = 16 V
VDS = 0.5 V
3.2
VINCL
IDSS
IISS
Input-Source Reverse
Clamp Voltage
Iin = -1 mA
Iin = 1 mA
-1
8
-0.3
11
V
V
Zero Input Voltage
Drain Current (Vin = 0) VDS < 35 V Vin = VIL
VDS = 50 V Vin = VIL
250
100
µA
µA
Supply Current from
Input Pin
VDS = 0 V Vin = 5 V
150
300
µA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RDS(on)
Static Drain-source On Vin = 7 V
Resistance
ID = 1 A TJ < 125 oC
0.15
0.3
Ω
2/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
Coss
Output Capacitance
VDS = 13 V f = 1 MHz Vin = 0
350
500
pF
SWITCHING (**)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 16 V
Vgen = 7 V
(see figure 3)
Id = 1 A
Rgen = 10 Ω
1100
550
200
100
1600
900
400
200
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 16 V
Vgen = 7 V
(see figure 3)
Id = 1 A
Rgen = 1000 Ω
1.2
1
1.6
1.2
1.8
1.5
2.3
1.8
µs
µs
µs
µs
(di/dt)on Turn-on Current Slope VDD = 16 V
Vin = 7 V
ID = 1 A
Rgen = 10 Ω
1.5
A/µs
Qi
Total Input Charge
VDD = 12 V ID = 1 A Vin = 7 V
13
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
0.8
Max.
Unit
V
VSD ( ) Forward On Voltage
ISD = 1 A Vin = VIL
1.6
trr
(
)
Reverse Recovery
Time
ISD = 1 A
VDD = 30 V
di/dt = 100 A/µs
125
ns
Tj = 25 oC
Qrr
(
)
Reverse Recovery
Charge
Reverse Recovery
Current
(see test circuit, figure 5)
0.22
3.5
µC
IRRM
(
)
A
PROTECTION
Symbol
Parameter
Test Conditions
Vin = 7 V VDS = 13 V
Min.
Typ.
10
Max.
15
Unit
A
Ilim
Drain Current Limit
6
tdlim
(
)
)
Step Response
Current Limit
Vin = 7 V VDS step from 0 to 13 V
12
20
µs
Tjsh
(
Overtemperature
Shutdown
150
oC
Tjrs
Eas
(
)
Overtemperature Reset
135
250
oC
(
)
Single Pulse
Avalanche Energy
starting Tj = 25 oC
Vin = 7 V Rgen = 1 KΩ L = 10 mH
VDD = 24 V
mJ
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
) Parameters guaranteed by design/characterization
(
3/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
PROTECTION FEATURES
to a voltage high enough to sustain the inductive
load current even if the INPUT pin is driven to 0V.
During Normal Operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path
as soon as VIN > VIH.
The device integrates an active current limiter
circuit which limits the drain current ID to Ilim
whatever the INPUT pin Voltage.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC
to 50KHz. The only difference from the user’s
standpoint is that a small DC current (typically
150 µA) flows into the INPUT pin in order to
supply the internal circuitry.
When the current limiter is active, the device
operates in the linear region, so power dissipation
may exceed the heatsinking capability. Both case
and junction temperatures increase, and if this
phase lasts long enough, junction temperature
may reach the overtemperature threshold Tjsh
.
During turn-off of an unclamped inductive load
the output voltage is clamped to a safe level by
an integrated Zener clamp between DRAIN pin
and the gate of the internal Power MOSFET.
If Tj reaches Tjsh, the device shuts down
whatever the INPUT pin voltage. The device will
restart automatically when Tj has cooled down to
Tjrs
In this condition, the Power MOSFET gate is set
4/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Thermal ImpedanceFor DPAK / IPAK
Thermal ImpedanceFor SOT82-FM
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve
Static Drain-Source On Resistance vs Input
Voltage
5/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
7/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Switching Time Resistive Load
Switching Time Resistive Load
Current Limit vs Junction Temperature
Step Response Current Limit
Source Drain Diode Voltage vs Junction
Temperature
8/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 4: Input Charge Test Circuit
Fig. 6: Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
9/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL ”A”
D
L2
DETAIL ”A”
L4
0068772-B
10/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
11/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ISOWATT220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.015
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.4
F
0.75
1.15
1.15
4.95
2.4
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
P011G
12/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
SOT82-FM MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.85
1.47
0.40
1.4
TYP.
MAX.
3.05
1.67
0.60
1.6
MIN.
1.122
0.578
0.157
0.551
0.511
0.177
4.133
0.866
2.933
6.102
0.767
MAX.
1.200
0.657
0.236
0.630
0.590
0.236
4.291
1.102
3.051
6.260
0.925
A
A1
b
b1
b2
c
1.3
1.5
0.45
10.5
2.2
0.6
D
10.9
2.8
e
E
7.45
15.5
1.95
7.75
15.9
2.35
L
L1
P032R
13/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components inlife support devices or systems without express
written approvalof SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
14/14
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