TN2101ND [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | TN2101ND |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN2101
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
Product marking for SOT-23:
N1U❋
BVDSS
/
RDS(ON)
VGS(th)
BVDGS
(max)
(max)
TO-236AB*
Die
15V
7.0Ω
1.0V
TN2101K1
TN2101ND
where ❋ = 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
7
Features
Advanced DMOS Technology
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Package Options
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
BVDGS
±15V
Gate
Source
TO-236AB
Operating and Storage Temperature
-55°C to +150°C
300°C
(SOT-23)
top view
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
7-67
TN2101
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TA = 25°C
°C/W
°C/W
TO-236AB
0.17A
0.8A
0.36W
200
350
0.17A
0.8A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
Typ
Max
Unit
Conditions
15
V
ID = 1mA, VGS = 0V
VGS = VDS, ID = 1mA
ID = 1mA, VGS = VDS
VGS = ±15V, VDS = 0V
0.5
1.0
-5.5
100
10
V
Change in VGS(th) with Temperature
Gate Body Leakage
mV/°C
nA
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
60
50
mA
Ω
VGS = 3.0, VDS = 15V
VGS =1.2V, ID = 2.0mA
RDS(ON)
50
7.0
Static Drain-to-Source
ON-State Resistance
Ω
VGS = 3V, ID = 50mA
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
ID = 50mA, VGS = 3V
VDS = 3V, ID = 50mA
Ω
m
110
60
35
5
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
VGS = 0V, VDS = 15V, f = 1MHz
VDD = 15V
ID = 50mA
Rise Time
15
15
25
1.8
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
RGEN = 25Ω
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
ISD = 50mA, VGS = 0V
ISD = 50mA, VGS = 0V
100
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
7-68
TN2101
Typical Performance Curves
Output Characteristics
Saturation Characteristics
1.0
1.0
0.8
0.6
0.4
0.2
0
VGS=5V
0.8
VGS = 4V
0.6
4V
0.4
3V
0.2
2V
3V
2V
1V
1V
0
0
1
2
3
4
5
0
4
12
16
8
7
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Temperature
0.25
0.2
0.5
0.4
0.3
0.2
0.1
0
V
= 3V
-55°C
25°C
DS
125°C
SOT-23
0.15
0.1
0.05
0
0.3
0.4
0.5
0
25
50
75
100
125
150
0
0.1
0.2
ID (amperes)
TA (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
0
10
1.0
T
= 25°C
A
SOT-23 (pulsed)
SOT-23 (DC)
0.1
TO-236AB
T
= 25°C
A
P
= 0.36W
D
0.01
0.1
1.0
10
100
0.001
0.01
0.1
1.0
10
VDS (volts)
tp(seconds)
7-69
TN2101
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
50
40
30
20
10
0
1.1
V
= 1.2V
GS
V
= 3.0V
GS
1.0
0.9
-50
0
50
100
150
0
0.1
0.2
0.3
0.4
0.5
150
2.0
ID (amperes)
Tj (°ꢀC)
Transfer Characteristics
VTH and RDS Variation with Temperature
1.0
0.8
0.6
0.4
0.2
0
1.4
1.4
1.2
1.0
0.8
0.6
R
@ 3V, 50mA
DS(ON)
1.2
1.0
0.8
0.6
0
125°C
25°C
-55°C
V
@ 1mA
GS(th)
0
2
4
6
8
10
-50
0
50
100
VGS (volts)
Tj (°ꢀC)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
100
10
8
V
= 10V
DS
75
50
6
V
= 15V
DS
96 pF
C
C
ISS
4
25
0
OSS
2
0
C
RSS
45 pF
0.4
1.2
0
5
10
15
0
0.8
1.6
QG (nanocoulombs)
VDS (volts)
7-70
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