TP0104ND [SUPERTEX]

Small Signal Field-Effect Transistor, 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE;


型号：	TP0104ND
厂家：	Supertex, Inc
描述：	Small Signal Field-Effect Transistor, 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE 开关晶体管
文件：	总4页 (文件大小：28K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TP0104

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

TO-92

TO-243AA*

Die^†

-40V

4.0Ω

-2.4V

-0.85A

TP0104N3

TP0104N8

TP0104ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

^†MIL visual screening available

Features

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Low threshold — 2.4V max.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Package Options

Applications

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TO-243AA

(SOT-89)

S G D

Absolute Maximum Ratings

TO-92

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.

7-107

TP0104

Thermal Characteristics

Package

I_D(continuous)*

I_D(pulsed)

Power Dissipation

θ_jc

θ_ja

I_DR*

I_DRM

@ T_C= 25°C

°C/W

TO-92

TO-243AA

-0.5A

-2.0A

1.0W

1.6W

125

170

78^†

-0.50A

-0.26A

-2.0A

-0.26A

* I_D(continuous) is limited by max rated T_j.

†

T_A= 25°C. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P_Dincrease possible on ceramic substrate.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV_DSS

Drain-to-Source

Breakdown Voltage

-40

V_GS= 0V, I_D= -1.0mA

V_GS(th)

∆V_GS(th)

I_GSS

Gate Threshold Voltage

-1.0

-2.4

-6.5

-100

-10

mV/°C

V_GS= V_DS, I_D= -1.0mA

V_GS= ±20V, V_DS= 0V

Change in V_GS(th)with Temperature

Gate Body Leakage

-5.8

-1.0

I_DSS

Zero Gate Voltage Drain Current

µA

V_GS= 0V, V_DS= Max Rating

V_GS= 0V, V_DS= 0.8 Max Rating

T_A= 125°C

-1

I_D(ON)

ON-State Drain Current

-0.08

-0.50

-1.70

V_GS= -3V, V_DS= -20V

V_GS= -5V, V_DS= -20V

V_GS= -10V, V_DS= -20V

V_GS= -3V, I_D= -25mA

V_GS= -5V, I_D= -0.1A

V_GS= -10V, I_D= -0.5A

V_DS= -20V, I_D= -0.5A

-0.25

-0.85

R_DS(ON)

Static Drain-to-Source

ON-State Resistance

4.7

7.5

4.0

1.0

Ω

2.5

∆R_DS(ON)

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Change in R_DS(ON)with Temperature

Forward Transconductance

Input Capacitance

0.55

250

%/°C

Ω

225

V_GS= 0V, V_DS= -20V

f = 1 MHz

Common Source Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

4.0

7.0

6.0

Rise Time

V_DD= -20V, I_D= -0.85A

_GEN= 25Ω

t_d(OFF)

t_f

Turn-OFF Delay Time

Fall Time

3.0

9.0

4.0

V_SD

t_rr

Diode Forward Voltage Drop

Reverse Recovery Time

-1.2

300

-2.0

I_SD= -0.25A, V_GS= 0V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

10%

PULSE

GENERATOR

INPUT

90%

-10V

R_gen

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

t_r

t_F

D.U.T.

OUTPUT

INPUT

90%

R_L

OUTPUT

V_DD

10%

V_DD

7-108

TP0104

Typical Performance Curves

Output Characteristics

Saturation Characteristics

-2.5

-2.25

-1.75

-1.25

-.75

-2.0

= -10V

-1.5

-1.0

-8V

-6V

-8V

-6V

-0.5

-.25

-4V

-40

-4V

-2

-4

-6

-8

-10

-20

-30

-50

V_DS(volts)

Transconductance vs. Drain Current

Power Dissipation vs. Case Temperature

0.5

0.4

0.3

0.2

0.1

==--2255VV

= -55°C

= 25°C

= 125°C

-1.6

TO-243AA

TO-92

-0.4

-0.8

-1.2

-2.0

100

125

150

I_D(amperes)

T_C(°C)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

-10

1.0

0.8

0.6

TO-243AA

T_A= 25°C

P_D= 1.6W

TO-243AA

(T_A= 25°C)

-1

TO-92 (DC)

0.4

0.2

-0.1

-0.01

TO-92

= 1W

= 25°C

-0.1

-1

-10

-100

0.001

0.01

0.1

t_p(seconds)

V_DS(volts)

7-109

TP0104

Typical Performance Curves

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.08

= -5V

1.06

1.04

1.02

1.0

= -10V

0.98

-50

100

150

-50

-1

-2

_D(amperes)

T_j(°C)

Transfer Characteristics

V_(th)and R_DSVariation with Temperature

2.0

1.6

1.2

0.8

0.4

-2.5

-2.0

-1.5

-1.0

1.4

1.2

1.0

0.8

0.6

= -25V

@ -1mA

= -55°C

(th)

25°C

R_DS(ON)

-10V, -0.5A

125°C

-0.5

-2

-4

-6

-8

-10

100

150

T_j(°C)

V_GS(volts)

Capacitance vs. Drain-to-Source Voltage

f = 1MHz

Gate Drive Dynamic Characteristics

200

150

100

-10

-8

= -10V

-40V

75 pF

-6

-4

ISS

-2

OSS

40pF

RSS

-10

-20

-30

-40

0.2

0.4

0.6

0.8

1.0

Q_G(nanocoulombs)

V_DS(volts)

7-110

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