TFP70N06 [TAK_CHEONG]

N-Channel Power MOSFET 70A, 60V, 0.014Ω; N沟道功率MOSFET 70A ， 60V ， 0.014Ω


型号：	TFP70N06
厂家：	Tak Cheong Electronics (Holdings) Co.,Ltd
描述：	N-Channel Power MOSFET 70A, 60V, 0.014Ω N沟道功率MOSFET 70A ， 60V ， 0.014Ω
文件：	总8页 (文件大小：316K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TAK CHEONG

SEMICONDUCTOR

N-Channel Power MOSFET

70A, 60V, 0.014Ω

1 = Gate

2 = Drain

3 = Source

GENERAL DESCRIPTION

This N-Channel MOSFET is used an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. This advanced

technology has been especially tailored to minimize on-state

resistance, provide superior switching performance. This

device is well suited for high efficiency switched mode power

suppliers, active power factor correction, electronic lamp

ballasts based half bridge topology.

TO-220AB

DEVICE MARKING DIAGRAM

L xxyy

TFP

XXXX

L = Tak Cheong Logo

xxyy = Monthly Date Code

TFPXXXX = Device Type

FEATURES

●

Avalanche energy specified

Gate Charge (Typical 70nC)

High Ruggedness

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise noted )

Symbol

Parameter

Value

Units

Drain- Source Voltage

DSS

±25

Gate-Source Voltage

GSS

Drain Current

Drain Current Pulsed

280

158

1.05

800

7.0

Power Dissipation

(Note 2)

Derating Factor above 25℃

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction Temperature

Storage Temperature Range

W/℃

V/ns

℃

(Note 1)

(Note 3)

dv/dt

150

- 55 to +150

℃

stg

Notes:

1. L=250uH, I =70A, V =25V, R =0Ω, Starting T =25℃.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. I ≤ 70A, di/dt ≤ 300A/us, V ≤ BV , Starting T =25℃.

DSS

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

0.95

Unit

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

62.5

θJA

Number: DB-229

August 2011, Revision A

Page 1

TAK CHEONG

SEMICONDUCTOR

ELECTRICAL CHARACTERISTICS

Off Characteristics (T_A= 25°C unless otherwise noted)

Symbol

BV_DSS

I_DSS

Parameter

Test Conditions

V_GS= 0V, I_D= 250uA

V_DS= 60V, V_GS= 0V

Min.

Typ.

Max.

Unit

Drain-Sounce Breakdown Voltage

Zero Gate Voltage Drain Current

I_GSSF

Gate-Body Leakage Current, Forward V_GS= 25V, V_DS= 0V

Gate-Body Leakage Current, Reverse V_GS= -25V, V_DS= 0V

100

-100

I_GSSR

On Characteristics (T_A= 25°C unless otherwise noted)

Symbol

V_{GS (th)}

Parameter

Gate Threshold Voltage

On-Resistance

Test Conditions

V_DS= V_GS, I_D= 250uA

V_GS= 10V, I_D= 35A

Min.

2.0

Typ.

Max.

4.0

Unit

R_DS(ON)

0.014

Dynamic Characteristics

Symbol

Ciss

Parameter

Test Conditions

Min.

Typ.

2350

690

Max.

3050

890

Unit

Input Capacitance

V_DS= 25V, V_GS= 0V,

f = 1.0MHz

Coss

Crss

Output Capacitance

Reverse Transfer Capacitance

160

200

Switching Characteristics

Symbol

t_d(on)

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD= 30V, I_D= 35A,

R_G= 50Ω

130

260

200

125

t_d(off)

(Note 4 & 5)

V_DS= 48V, I_D= 70A,

_GS= 10V

Qgs

Qgd

(Note 4 & 5)

Drain-Source Diode Characteristics and Maximum Ratings

Symbol

Parameter

Test Conditions

Min.

Typ,

Max.

Unit

Integral Reverse p-n

Junction Diode in the

MOSFET

Continuous Drain-Source Current

I_S

Pulsed Drain-Source Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

280

1.5

I_SM

V_SD

Trr

V_GS= 0V, I_S= 70A

_GS= 0V, I_S= 70A,

dI_F/ dt = 100A/uS

(Note 4)

Reverse Recovery Charge

110

Qrr

Notes:

4. Pulse Test: Pulse width

5. Basically not affected by working temperature.

300us, Duty cycle ≤ 2%.

Number: DB-229

August 2011, Revision A

Page 2

TAK CHEONG

SEMICONDUCTOR

TYPICAL CHARACTERISTICS

Number: DB-229

August 2011, Revision A

Page 3

TAK CHEONG

SEMICONDUCTOR

Number: DB-229

August 2011, Revision A

Page 4

TAK CHEONG

SEMICONDUCTOR

Number: DB-229

August 2011, Revision A

Page 5

TAK CHEONG

SEMICONDUCTOR

Number: DB-229

August 2011, Revision A

Page 6

TAK CHEONG

SEMICONDUCTOR

TO220AB PACKAGE OUTLINE

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

3.60

1.20

2.03

0.40

1.20

0.36

14.22

2.34

9.70

5.84

12.70

2.70

3.50

2.54

4.80

1.40

2.90

1.00

1.78

0.60

16.50

2.74

10.60

6.85

14.70

3.30

4.00

3.40

0.142

0.047

0.080

0.016

0.047

0.014

0.560

0.092

0.382

0.230

0.500

0.106

0.138

0.100

0.189

0.055

0.114

0.039

0.070

0.024

0.650

0.108

0.417

0.270

0.579

0.130

0.157

0.134

ØP

NOTE: Above package outline conforms to JEDEC TO-220AB

Number: DB-229

August 2011, Revision A

Page 7

TAK CHEONG ^®

DISCLAIMER NOTICE

NOTICE

The information presented in this document is for reference only. Tak Cheong reserves the right to make

changes without notice for the specification of the products displayed herein.

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not

designed to be used with equipment or devices which require high level of reliability and the malfunction of with

would directly endanger human life (such as medical instruments, transportation equipment, aerospace

machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor

Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such

improper use of sale.

This publication supersedes & replaces all information reviously supplied. For additional information, please visit

our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.

Number: DB-100

April 14, 2008 / A

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