MA4AGCP910 [TE]
AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz; 铝镓砷倒装芯片PIN二极管100MHz至50GHz的
| 型号： | MA4AGCP910 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AlGaAs Flip-Chip PIN Diode
100MHz to 50GHz
MA4AGFCP910
Rev 2.0
Features
Top View Shown Is With Diode Junction Up
• Lower Series Resistance, 5.2Ω
• Ultra Low Capacitance, 18 f F
• High Switching Cutoff Frequency, 50 GHz
• 3 Nanosecond Switching Speed
• Driven by Standard TTL
Cathode
• Silicon Nitride Passivation
•
Polyimide Scratch Protection
Description
M/A-COM's MA4AGFCP910 is an Aluminum
Gallium Arsenide Flip-Chip PIN diode. These
devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device
uniformity and extremely low parasitics. The
diodes exhibit an extremely low RC Product,
( 0.1 ps) and 3nS switching characteristics.
They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch
protection. The protective coatings prevent
damage to the junction and the anode airbridge
during handling.
Package Outline
Electrical Specifications at TA = 25 °C
1 MHz & DC
Specifications
10 GHz Reference
Data1,2
Parameters and Test Conditions
Symbol
Units
Min
Max
Min
Typ.
Typ.
0.018
5.2
Max.
.021
6.0
Total Capacitance at –5 V
RF Resistance at +10 mA
Ct
Rs
Vf
pF
Ω
0.018
0.021
Forward Voltage at +10 mA
Reverse Breakdown Voltage at 10 uA3
Volts
Volts
1.33
75
1.4
Vb
50
Minority Carrier Lifetime
nS
4.0
τL
Notes:
1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.
2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz.
3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.
Specification Subject to Change Without Notice
1
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Flip-Chip PIN Diode
MA4AGFCP910
Rev 2.0
Typical RF Performance
MA4AGFCP910
Typical Insertion Loss vs. Frequency
0.0
-0.2
-0.4
-0.6
-0.8
5mA
10mA
15mA
15 mA
10 mA
5 mA
2
10
18
26
34
42
50
Frequency (GHz)
Specification Subject to Change Without Notice
2
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Flip-Chip PIN Diode
MA4AGFCP910
Rev 2.0
Typical RF Performance
MA4AGFCP910
Typical Return Loss vs. Frequency ( Either Port Direction )
0
-5
5mA
10mA
15mA
-10
-15
-20
-25
-30
-35
15 mA
10 mA
5 mA
2
10
18
26
34
42
50
Frequency (GHz)
Specification Subject to Change Without Notice
3
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Flip-Chip PIN Diode
MA4AGFCP910
Rev 2.0
Typical RF Performance
MA4AGFCP910
Typical Isolation vs Frequency
0
-5
-10
-15
-20
-25
-30
-35
0V
5V
2
10
18
26
Frequency (GHz)
34
42
50
Specification Subject to Change Without Notice
4
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Flip-Chip PIN Diodes
MA4AGFCP910
Rev 2.0
Applications
The 20 fF capacitance of the MA4AGFCP910 allows use through mmwave switch and switched phase shifter
applications. This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is
required. For surface mount assembly, the low capacitance of the MA4AGFCP910 makes it ideal for use in microwave
multithrow switch assemblies, where the series capacitance of each “off” port adversely loads the input port and affects
VSWR.
Absolute Maximum Ratings @ 25 ˚C
Parameter
Maximum Ratings
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated RF & DC Power
RF C.W. Incident Power
Mounting Temperature
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
50 mW
+23 dBm C.W.
+300 °C for 10 seconds
Note: Exceeding these limits may cause permanent damage.
Device Installation Procedures
The following guidelines should be observed to avoid damaging GaAs Flip-Chips.
Cleanliness
These devices should be handled in a clean environment.
Do Not attempt to Clean Die After installation.
Static Sensitivity
Gallium arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used
when handling these devices. These devices are rated Class 0, ( 0-199V ) per HBM MIL-STD-883, method 3015.7
[C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free environment.
General Handling
These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Die can be
handled with plastic tweezers or picked and placed with a #27 tip vacuum pencil.
Assembly Requirements using Electrically Conductive Ag Epoxy and Solder
These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silk-
screened circuits using Electrically Conductive Ag Epoxy, approximately 1-2 mils in thickness and cured at approximately 90°C to
150 °C per manufacturer’s schedule. For extended cure times > 30 minutes, temperatures must be below 200 °C.
Sn Rich Solders are not recommended due to the Tungsten Metallization scheme beneath the gold contacts. Indalloy or
80 Au/20 Sn Solders are acceptable. Maximum soldering temperature must be < 300 °C for < 10 sec.
Specification Subject to Change Without Notice
5
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Flip-Chip PIN Diodes
MA4AGFCP910
Rev 2.0
Ordering Information
Part Number
MA4AGCP910
Packaging
Die in Carrier
Tape/Reel
MADP-000910-13050T
Circuit Mounting Dimensions ( Inches )
0.013
0.012
(2) PL
0.008
(2) PL
Specification Subject to Change Without Notice
6
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
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