MA4AGSBP907-W [TE]
AlGaAs Solder Bump Flip-Chip PIN Diode; 铝镓砷凸点倒装芯片PIN二极管
| 型号： | MA4AGSBP907-W |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | AlGaAs Solder Bump Flip-Chip PIN Diode |
| 文件： | 总5页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AlGaAs Solder Bump Flip-Chip PIN Diode
MA4AGSBP907 Rev 2.0
Features
• Low Series Resistance, 4 Ω
• Ultra Low Capacitance, 25 fF
• High Switching Cutoff Frequency, 40 GHz
• 2 Nanosecond Switching Speed
• Can be Driven by Buffered TTL
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Solderable Bump Die Attach
Mounting Side with Solder Bumps
Description
M/A-COM's MA4AGSBP907 is an Aluminum Gallium Arsenide Flip-Chip PIN diode with solder bumps.These devices
are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low
parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps ) and 2 nS switching characteristics. The useable
frequency range is 100 MHz to 40 GHz. They are fully passivated with silicon nitride and have an additional layer of a
polymer for scratch protection.The protective coatings prevent damage to the junction and the anode airbridge during
handling and circuit attachment.
Aplications
The 25 fF capacitance of the MA4AGSBP907 allows use through mmwave switch and switched phase shifter
applications. This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is
required. For surface mount assembly, the low capacitance of the MA4AGSBP907 makes it ideal for use in microwave
multithrow switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects
VSWR.
Electrical Specifications and RF Data at TA = 25 °C
1 MHz & DC
Specifications
10 GHz Reference
Data1,2
Parameters and Test Conditions
Symbol
Units
Min
Typ.
Max
Min
Typ.
0.025
4.2
Max.
Total Capacitance at –10 V
Forward Resistance at +10 mA
Forward Voltage at +10 mA
Ct
Rs
Vf
pF
Ω
0.025 0.030
5.2
1.33
-50
7.0
1.45
-45
Volts
Volts
Reverse Breakdown Voltage at -10 uA3
Vb
Switching Speed ( 10 to 90% RF Voltage )4
Trise
Tfall
nS
2
& ( 90 to 10% RF Voltage )4
Notes:
1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.
2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz.
3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.
4. Switching speed is measured between 10% and 90% or 90% to 10 % RFVoltage for a Single Series Mounted Diode. Driver
Delay is Not included.
Specification Subject to Change Without Notice
1
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Solder Bump Flip-Chip PIN Diode
MA4AGSBP907 Rev2.0
Single Series Diode Insertion Loss vs Frequency
I. Loss @5mA
I. Loss @15mA
I. Loss @50mA
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
Frequency (GHz)
Single Series Diode Return Loss vs Frequency
R. Loss @5mA
R. Loss @15mA
R. Loss @50mA
-20.0
-22.0
-24.0
-26.0
-28.0
-30.0
-32.0
-34.0
-36.0
-38.0
-40.0
Frequency (GHz)
Specification Subject to Change Without Notice
2
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Solder Bump Flip-Chip PIN Diode
MA4AGSBP907 Rev 2.0
Single Series Diode Isolation vs Frequency
Isolation @ -10V
Isolation @ 0V
Isolation @ -1V
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
Frequency (GHz)
Specification Subject to Change Without Notice
3
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Solder Bump Flip-Chip PIN Diode
MA4AGSBP907 Rev 2.0
Cathode
.030”+/-.001
.0078”+/-.0005
.0075”+/-.0005
.015.5”+/-.0005
.019”+/-.0005
.0075”+/-.0005
.0095”+/-.0005
.005”+/-.0005
.005”+/-.0005
0.013”
0.012”
(2) PL
0.008”
(2) PL
Circuit Mounting Dimensions ( Inches )
Specification Subject to Change Without Notice
M/A-COM Inc.
4
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
AlGaAs Solder Bump Flip-Chip PIN Diode
MA4AGSBP907 Rev 2.0
Device Installation Procedures
The following guidelines should be observed to avoid damaging GaAs Flip-Chips.
Cleanliness
These devices should be handled in a clean environment. Do Not attempt to Clean Die After installation.
Static Sensitivity
Gallium arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should
be used when handling these devices. These devices are rated Class 0, ( 0-199V ) per HBM MIL-STD-883, method
3015.7 [C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free
environment.
General Handling
These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Die
can be handled with plastic tweezers or picked and placed automatically with a #27 tip vacuum pencil.
Assembly Requirements using Tin Lead Solder
The Flip Chip Diode employs a 6um thick, Sn 63 / Pb 37 Solderable interface as part of the 50µm high solder bump.
These chips are designed to be soldered onto hard or soft substrates with the junction side down. They should be
mounted onto silkscreened circuits using 60/40 Sn/Pb solder paste. A typical profile for a Sn 63/ Pb 37 Soldering
process is provided in Application Note, M538 Surface Mounting Instructions on the M/A-COM website
www.macom.com
Absolute Maximum Ratings @ 25˚C1
Ordering Information
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated RF & DC Power
RF C.W. Incident Power
Mounting Temperature
Notes:
Maximum Ratings
Part Number
Packaging
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
50 mW
+23 dBm C.W.
+300 °C for 10 seconds
MA4AGSBP907
Die in Carrier
Tape/Reel
MA4AGSBP907-T
MA4AGSBP907-W
Wafer on Frame
1. Exceeding these limits may cause permanent
damage.
Specification Subject to Change Without Notice
5
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
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