MA4AGP907-W [TE]
AlGaAs Flip-Chip PIN Diode; 铝镓砷倒装芯片PIN二极管
| 型号： | MA4AGP907-W |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | AlGaAs Flip-Chip PIN Diode |
| 文件： | 总5页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AlGaAs Flip-Chip PIN Diode
MA4AGP907
V1
Package Outline
Features
(Top View Shown Is With Diode
Junction Up)
·
·
·
·
·
·
·
Low Series Resistance, 3 W
Ultra Low Capacitance, 25 fF
High Switching Cutoff Frequency, 40 GHz
2 Nanosecond Switching Speed
Can be Driven by Buffered TTL
Silicon Nitride Passivation
Cathode
Polyamide Scratch Protection
Description and Applications
M/A-COM's MA4AGP907 is an Aluminum Gallium
Arsenide Flip-Chip PIN diode. These devices are
fabricated on OMCVD epitaxial wafers using a
process designed for high device uniformity and
extremely low parasitics. The diodes exhibit an
extremely low RC Product, ( 0.1 ps ) and 2 nS
switching characteristics. The useable frequency
range is 100 MHz to 40 GHz.
They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch
protection. The protective coatings prevent damage
to the junction and the anode airbridge during handling.
Absolute Maximum Ratings @ 25 °C1
Parameter
Maximum Rating
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
The 25 fF capacitance of the MA4AGP907 is
useable for mmwave switch and switched phase
shifter applications. This diode is designed for use in
pulsed or CW applications, where single digit nS
switching speed is required. For surface mount
assembly, the low capacitance of the MA4AGP907
makes it ideal for use in microwave multithrow
switch assemblies, where the series capacitance of
each “off” port adversely loads the input and affects
VSWR.
Operating Temperature
Storage Temperature
JunctionTemperature
Dissipated RF & DC Power
RF C.W. Incident Power
Mounting Temperature
50 mW
+ 23 dBm C. W.
+300 °C for 10 sec.
1. Operation of this device above any one of these parameters
may cause permanent damage.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
AlGaAs Flip-Chip PIN Diode
MA4AGP907
V1
Electrical Specifications and RF Data @ TA = 25 °C
Parameters and Test Conditions
Symbol Units
1 MHz & DC Specifications
1 GHz Reference Data1,2
Min.
Typ.
Max.
Min.
Typ.
Max.
Total Capacitance at -10 V
Ct
pF
-
0.027
0.035
-
-
-
Forward Resistance at +10 mA
Forward Voltage at +10 mA
Rs
Vf
-
-
-
-
-
-
3.1
-
-
-
W
Volts
1.35
1.45
Reverse Leak Current @ -45 V
Ir
uA
nS
-
-
-
l -10 l
-
-
-
-
-
-
-
Switching Speed ( 10 to 90% RF Voltage )3
& (90 to 10% RF Voltage)3
Trise
Tfall
2
NOTES:
1. Forward Series Resistance is determined by measuring Single Series Diode with a HP4291 Impedance Analyzer at 1 GHz.
2. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.
3. Switching speed is measured between 10% and 90% or 90% to 10 % RFVoltage for a Single Series Mounted Diode. Driver Delay is
Not included.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
AlGaAs Flip-Chip PIN Diode
MA4AGP907
V1
Device Installation Procedures
Assembly Requirements Using
Electrically Conductive Ag Epoxy and
Solder
The following guidelines should be observed to
avoid damaging GaAs Flip-Chips.
These chips are designed to be inserted onto hard
or soft substrates with the junction side down. They
should be mounted onto silk-screened circuits using
Electrically Conductive Ag Epoxy, approximately 1-2
mils in thickness and cured at approximately 90°C to
150 °C per manufacturer’s schedule . For extended
cure times > 30 minutes, temperatures must be
below 200 °C.
Cleanliness
These chips should be handled in
environment. Do not attempt to clean die after
installation.
a clean
Static Sensitivity
Aluminum Gallium Arsenide PIN diodes are ESD
sensitive and can be damaged by static electricity.
Proper ESD techniques should be used when
handling these devices. These devices are rated
Class 0, ( 0-199V ) per HBM MIL-STD-883, method
3015.7 [C = 100pF ±10%, R = 1.5kW ±1%]. Even
though tested die pass 50V ESD, they must be
handled in a static-free environment.
Sn Rich Solders ( > 30 % Sn by weight ) are not
recommended due to the Tungsten Metallization
scheme beneath the gold contacts. Indalloy type or
80 Au/20 Sn Solders are acceptable. Maximum
soldering temperature must be < 300 °C for < 10 sec.
General Handling
These devices have a polymer layer which provides
scratch protection for the junction area and the
anode air bridge. Die can be handled with plastic
tweezers or picked and placed automatically with a
#27 tip vacuum pencil.
Circuit Mounting Dimensions (Inches)
Ordering Information
Part Number
Package
0.013
MA4AGP907
Die in Carrier
MA4AGP907-T
MA4AGP907-W
Tape in Reel
Wafer on Frame
0.012
(2) PL
0.008
(2) PL
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
AlGaAs Flip-Chip PIN Diode
MA4AGP907
V1
Single Series Diode Insertion Loss vs Frequency
I. Loss @5mA
I. Loss @15mA
I. Loss @50mA
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
Frequency (GHz)
Single Series Diode Return Loss vs Frequency
R. Loss @5mA
R. Loss @15mA
R. Loss @50mA
-20.0
-22.0
-24.0
-26.0
-28.0
-30.0
-32.0
-34.0
-36.0
-38.0
-40.0
Frequency (GHz)
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
AlGaAs Flip-Chip PIN Diode
MA4AGP907
V1
Single Series Diode Isolation vs Frequency
Isolation @ -10V
Isolation @ 0V
Isolation @ -1V
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
Frequency (GHz)
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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