MA4AGSW8-1_技术文档

AlGaAs SP8T PIN

Diode Series Switch

V 1.00

Features

MA4AGSW8-1 Layout

n

Specified Performance : 50 MHz to 40 GHz

Operational performance: 50 MHz to 50 GHz

2.0 dB Typical Insertion Loss at 40 GHz

30 dB Typical Isolation at 40 GHz thru 3 Diodes

22 dB Typical Isolation at 40 GHz thru 2 Diodes

Low Current comsumption :

10 mA for low loss state

0 Volts for Isolation state

n

M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology

Silicon Nitride Passivation

n

BCB Impact Protection

Description

Absolute Maximum Ratings¹

M/A-COM’s MA4AGSW8-1 is an Aluminum-Gallium- Arsenide

(AlGaAs) anode enhanced, SP8T PIN diode Series Switch.

Operation is accomplished with 10 mA applied to the low loss port

and 0 V for the isolated ports.

@ TA = +25 °C (Unless otherwise

specified)

M/A-COM’s AlGaAs process utilizes

a

patent pending

Parameter

Operating Temperature

Storage Temperature

Incident C.W. RF Power

Reverse Voltage

Maximum Rating

-55 °C to +125 °C

-65 °C to +150 °C

+ 23 dBm C. W.

25 V

hetero-junction technology which produces lower insertion loss

than conventional GaAs devices. These devices are fabricated on

an OMCVD epitaxial wafer using a process designed for high

device uniformity and extremely low parasitics. The diodes exhibit

low series resistance, ( 3 W ) , low capacitance ( 20 fF ) , and fast

switching speed ( 20 nS ).

The MA4AGSW8-1 device is fully passivated with silicon nitride,

and has an additional layer of a polyamide for impact protection.

This protective coating prevents damage to the junction and the

anode air bridges during assembly and test. RF to DC bias

networks are required. This allows the MA4AGSW8-1 device to

be optimized for a particular operating band.

Bias Current

+/- 30 mA

1. Exceeding any of these values may result in permanent

damage

Applications

The low capacitance of the PIN diodes makes this device ideal for

use in microwave multi-throw switch designs. The low series

resistance of the diodes reduces the insertion loss of the devices at

microwave/millimeter-wave frequencies. These AlGaAs PIN

switches are used as switching arrays on radar systems, optical

switching networks, instrumentation, and other wideband

multi-throw switch assemblies.

AlGaAs SP8T PIN Diode Series Switch

MA4AGSW8-1

V 1.00

Electrical Specifications @ T_A= 25 °C, -15 mA Bias Current, and 0 Volts

(On-Wafer Measurements)

RF Specifications

Parameter

Frequency

Minimum

Typical

Maximum

Units

Insertion Loss

Isolation¹

0.05 - 18 GHz

18 - 26 GHz

26 - 40 GHz

0.05 - 18 GHz

18 - 26 GHz

26 - 40 GHz

0.05 - 18 GHz

18 - 26 GHz

26 - 40 GHz

10 GHz

-

1.5

1.8

2.0

32

15

20

2.0

2.1

2.3

dB

ns

30

10

13

10

-

Input/Output Return Loss

Switching Speed²

NOTES:

1. Isolation is measured through (3) Diodes from Common Port ( Input ) to Selected Output Port with (1) Opposite Port in Low

Loss. Isolation for (2) Diodes from Common Port ( Input ) to Selected Output with (1) Adjacent Port in Low Loss = 22 dB

Typical.

2. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5 V TTL compatible driver.

Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to

achieve 20 ns rise and fall times.

Typical Driver Connections

Output Ports

Input Port

J1

@J2

@J3

@J4

@J5

@J6

@J7

@J8

@J9

Low Loss

Isolation

Low Loss

Isolation

Low Loss

Isolation

Low Loss

Isolation

Low Loss

Isolation

Low Loss

Isolation

Low Loss

Isolation

Low Loss

J1

NOTES:

1. Low Loss = -15mA applied at the specified Output Port. (A dc ground return at port J1 must be provided)

2. Isolation = 0 Volts applied at the specified Output Ports.

2

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

n North America: Tel. (800) 366-2266

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

Visit www.macom.com for additional data sheets and product information.

AlGaAs SP8T PIN Diode Series Switch

Microwave and Millimeter Wave Performance

MA4AGSW8-1

V 1.00

Typical Insertion Loss

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-4.5

-5.0

E

.

1

0.05

10.05

20.05

30.05

40.05

50.00

freq, GHz

Typical Return Loss

0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

0.05

10.05

20.05

30.05

40.05

50.00

3

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

n North America: Tel. (800) 366-2266

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

Visit www.macom.com for additional data sheets and product information.

AlGaAs SP8T PIN Diode Series Switch

Microwave and Millimeter Wave Performance (cont’d)

MA4AGSW8-1

V 1.00

Typical Isolation

0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

0.05

10.05

20.05

30.05

40.05

50.00

4

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

n North America: Tel. (800) 366-2266

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

Visit www.macom.com for additional data sheets and product information.

AlGaAs SP8T PIN Diode Series Switch

Assembly Considerations

MA4AGSW8-1

V 1.00

Solder Die Attachment

The following precautions should be observed to avoid

damaging these chips.

All die attach and bonding methods should be compatible with

gold metal. Solder which does not scavange gold, such as

80Au/20Sn or Indalloy #2 is recommended. Do not

expose die to a temperature greater than 300 °C for more than

10 seconds.

Cleanliness

These chips should be handled in a clean environment. Do not

attempt to clean die after installation.

Electrical Conductive Epoxy

Die Attachment

Assembly can be preheated to approximately 125 °C. Use a

controlled thickness of approximately 2 mils for best electrical

and thermal conductivity and lower thermal resistance. Cure

epoxy as per manufacturer’s schedule. For extended cure

times, temperatures should be kept below 150 °C.

Electro-Static Sensitivity

These Devices are considered ESD Class1. Proper ESD

techniques should be used when handling these devices.

General Handling

The protective polymer coating on the active areas of these die

provides scratch and impact protection, particularly for the

metal airbridge which contacts the diode’s anode. Die should

primarily be handled with vacuum pickups, or alternatively

with plastic tweezers.

Ribbon/Wire Bonding

Wedge thermo compression bonding or ball bonding may be

used to attach ribbons to the bonding pads. Gold ribbons

should be 1/4 x 3 mil sq. for all RF ports for lowest inductance

and best microwave performance.

Mounting Techniques

These AlGaAs devices are designed to be mounted with

electrically conductive silver epoxy or with

a lower

temperature solder perform, which is not rich in Sn content.

Operation of the MA4AGSW8-1

The MA4AGSW8-1 switch is designed to operate in systems where lower D.C. current consumption and D.C. operating voltage are

required. The application of either +10 mA or – 10 mA DC bias current to the selected port will provide the low insertion loss state.

Typically this low loss, “ ON ” bias voltage through (3) series diodes is | 4.5 Volts | maximum. All Isolated Ports can be set to 0 V at

0 mA, or the application of | 5 V | back bias at 0 mA will improve the isolation and switching speed. RF to DC bias networks, (such

as the MA4BN18-40) are required on all RF Ports.

A simple single supply, +5 V, PIN Diode TTL Gate Driver can be used to supply current for loss or 0 V back bias for isolation to

switch the individual RF Ports. In this bias scheme, + 5 V through a current limiting resistor would be applied at the common port and

each RF port would be connected to a TTL Gate. Low loss would occur when the Selected Gate Voltage is 0.5 V @ + 10 mA ,

“ TTL 0 ” and Isolation would occur when the Selected Gate Voltage is +5V @ 0mA (0 V Back Bias), “ TTL 1 ”.

For faster switching speeds (< 20 nS) , a +/- 5 V , PIN Diode TTL Driver should be employed to help remove the diode-stored charge

with back bias. In this case, the common port is connected to D.C. Ground. Insertion Loss is achieved with – 10 mA @ – 4.5 V and

Isolation is accomplished by applying + 5 V @ 0mA to the selected RF Ports respectively.

5

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

n North America: Tel. (800) 366-2266

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

Visit www.macom.com for additional data sheets and product information.

AlGaAs SP8T PIN Diode Series Switch

MA4AGSW8-1 Schematic

MA4AGSW8-1

V 1.00

J5

J6

J4

J3

J7

J8

J1

( Common )

J9

J2

6

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

n North America: Tel. (800) 366-2266

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

Visit www.macom.com for additional data sheets and product information.

AlGaAs SP8T PIN Diode Series Switch

MA4AGSW8-1 Outline

MA4AGSW8-1

V 1.00

mils

mm

Dim

Min.

2.36

Max.

2.39

Min.

92.7

Max.

93.9

A

B

1.26

2.15

1.45

1.06

0.52

0.72

1.29

2.16

1.46

1.07

0.53

0.73

49.4

84.8

56.9

41.5

20.6

28.3

50.6

85.2

57.3

41.9

21.0

28.7

C

D

E

F

G

H

1.07

0.09

1.08

0.11

42.3

3.7

42.7

4.3

Thickness

Bonding Pads 100 mm x 100 mm, 5 mm Gold Thick

7

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

n North America: Tel. (800) 366-2266

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

Visit www.macom.com for additional data sheets and product information.


型号：	MA4AGSW8-1
厂家：	TE CONNECTIVITY
描述：	AlGaAs SP8T PIN Diode Series Switch 铝镓砷SP8T PIN二极管开关系列二极管开关射频微波
文件：	总7页 (文件大小：156K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MA4AGSW8-1 [TE]

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