概述
规格参数
数据手册MAAM37000-A1G 概述
L ow Noise GaAs MMIC Amplifier 3.5 - 7 GHz L嗷嗷噪声砷化镓MMIC放大器3.5 - 6 GHz的 射频/微波放大器
MAAM37000-A1G 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 包装说明： | ROHS COMPLIANT, CERAMIC, CR-10, 8 PIN | Reach Compliance Code： | unknown |
| 风险等级： | 5.11 | Is Samacsys： | N |
| 安装特点： | SURFACE MOUNT | 端子数量： | 8 |
| 最高工作温度： | 100 °C | 最低工作温度： | -55 °C |
| 封装主体材料： | CERAMIC | 封装等效代码： | SOP8(UNSPEC) |
| 电源： | 4 V | 子类别： | RF/Microwave Amplifiers |
| 最大压摆率： | 110 mA | 表面贴装： | YES |
| 技术： | GAAS | Base Number Matches： | 1 |
MAAM37000-A1G 数据手册
通过下载MAAM37000-A1G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Low Noise GaAs MMIC Amplifier
3.5 - 7 GHz
MAAM37000-A1
V 2.00
Features
CR-3
●
Low Noise Figure: 2.2 dB
●
High Gain: 17 dB
●
Gain Flatness: ±0.5 dB
●
Single Supply: +4 V
●
No External Components Required
●
DC Decoupled RF Input and Output
●
Small, 8-Lead Ceramic Package
Description
M/A-COM’s MAAM37000-A1 is a wide band, low noise,
MMIC amplifier housed in a small 8-lead ceramic pack-
age. It includes two integrated gain stages and employs
series inductive feedback to obtain excellent noise figure
and a good, 50-ohm, input and output impedance match
over the entire frequency band. The MAAM37000-A1
operates from a single +4 V supply. It is fully monolithic,
requires no external components, and is provided in a
user-friendly, microwave package.
Ordering Information
Part Number
MAAM37000-A1
MAAM37000-A1G
Package
8-Lead Ceramic
Gull Wing
The MAAM37000-A1 performs well as a low noise ampli-
fier in receive applications and as a driver or buffer ampli-
fier where high gain, excellent linearity and low power
consumption are important. Because of its wide band-
width, the MAAM37000-A1 can be used in numerous
commercial and government system applications, such as
TVRO, VSAT, missile guidance and radar.
The MAAM37000-A1 is manufactured in-house using a
reliable, 0.5-micron, GaAs MESFET process. This product
is 100% RF tested to ensure compliance to performance
specifications.
Electrical Specifications
Test Conditions:T = +25°C, Z = 50 , V
= +4 V, P = -30 dBm
A
0
DD
IN
Parameter
Gain
Units
dB
Min.
15
Typ.
17
Max.
Noise Figure
Input VSWR
Output VSWR
dB
2.2
3.2
2.0:1
2.0:1
+14
+8
Output 1 dB Compression
dBm
dBm
dB
Input IP
3
Reverse Isolation
Bias Current
35
mA
75
110
V 2.00
Absolute Maximum Ratings1
Schematic
Parameter
Absolute Maximum
VDD
Input Power
+7 volts
+20 dBm
Current
150 mA
Channel Temperature
Operating Temperature2
Storage Temperature
+150°C
-55°C to +100°C
-65°C to +150°C
1. Operation of this device outside these limits may cause permanent
damage.
2. Typical thermal resistance ( jc) = +120°C/W
Typical Performance @ +25°C
VSWR vs FREQUENCY
GAIN vs FREQUENCY
5.0
4.0
3.0
2.0
1.0
20
18
16
14
12
10
Input
Output
2
3
4
5
6
7
8
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
NOISE FIGURE vs FREQUENCY
6
5
4
3
2
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
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