MAAM71100_V6 [TE]

GaAs MMIC Power Amplifier; 砷化镓MMIC功率放大器
MAAM71100_V6
型号: MAAM71100_V6
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs MMIC Power Amplifier
砷化镓MMIC功率放大器

放大器 功率放大器
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MAAM71100  
GaAs MMIC Power Amplifier  
7.0 - 11.0 GHz  
Rev. V6  
Features  
Die  
+31 dBm Typical Saturated Power  
18 dB Typical Gain  
30% Typical Power Added Efficiency  
On-Chip Bias Network  
DC Decoupled RF Input and Output  
Description  
The MAAM71100 is a GaAs MMIC two stage high  
efficiency power amplifier. The MAAM71100 is a  
fully monolithic design for operation in 50  
systems, with an on-chip negative bias network  
which eliminates the need for external bias circuitry.  
Ordering Information 1  
Schematic  
Part Number  
MAAM71100  
Package  
Die  
1. Die quantity varies.  
Absolute Maximum Ratings 2  
Parameter  
VDD  
Absolute Maximum  
+10 V  
-5 V  
VGG  
Input Power  
+23 dBm  
Operating Channel  
Temperature  
+150°C  
Storage Temperature  
-65°C to +150°C  
2. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MAAM71100  
GaAs MMIC Power Amplifier  
7.0 - 11.0 GHz  
Rev. V6  
Electrical Specifications: TA = 25°C, Z0 = 50 , VDD = +8 V, VGG = -1.2 V Typ  
Parameter  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
Gain  
dB  
14  
18  
Input VSWR  
Output VSWR  
Ratio  
Ratio  
2.0:1  
4.5:1  
Saturated Power Output  
Output Power at 1 dB Gain Compression  
Third Order Intercept  
Input Power = +18 dBm  
dBm  
dBm  
dBm  
dB  
+31  
+28  
+38  
30  
Reverse Isolation  
IDSQ (No RF)  
IDD Pin = +18 dBm  
mA  
mA  
520  
750  
Bias Current  
Thermal Resistance  
°C/W  
12  
Typical Performance Curves  
Output Power and Power added efficiency vs.  
Frequency @ Pin = +18 dBm  
Linear Gain and Input Return Loss vs. Frequency  
25  
20  
-5  
34  
32  
30  
28  
26  
24  
60  
50  
40  
30  
20  
10  
S21  
Pout  
-10  
15  
10  
5
-15  
-20  
-25  
-30  
S11  
PAE  
0
6
7
8
9
10  
11  
12  
6
7
8
9
10  
11  
12  
Frequency (GHz)  
Frequency (GHz)  
Output Power and Power added efficiency vs.  
Input Power @ 9 GHz  
34  
30  
26  
22  
18  
14  
50  
40  
Pout  
30  
20  
10  
0
PAE (%)  
0
4
8
12  
16  
20  
Pin (dBm)  
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MAAM71100  
GaAs MMIC Power Amplifier  
7.0 - 11.0 GHz  
Rev. V6  
Handling Procedures  
Permanent damage to the MAAM71100 may occur  
if the following precautions are not adhered to:  
Outline Drawing  
A. Cleanliness - The MAAM71100 should be han-  
dled in a clean environment. DO NOT attempt  
to clean assembly after the MAAM71100 is  
installed.  
B. Static Sensitivity - All die handling equipment  
and personnel should comply with DOD-STD-  
1686 Class I.  
C. Transients - Avoid instrument and power sup-  
ply transients while bias is connected to the  
MAAM71100. Use shielded signal and bias  
cables to minimize inductive pick-up.  
D. General Handling - DO NOT touch the surface  
of the die.  
It is recommended that the  
MAAM71100 die be handled along the long  
side with a sharp pair of tweezers.  
Mounting  
The MAAM71100 is back-metallized with Pd/Ni/Au  
(100/1, 000/30,000Å) metallization. It is recom-  
mended that the die be mounted with Au/Sn eutec-  
tic preforms. The attachment surface should be  
clean and flat.  
Typical Bias Configuration 3,4,5  
VDD  
(VD1, VD2  
)
A. An 80/20 preform is recommended with a work  
surface temperature of approximately 255°C  
and a tool temperature of 265°C. When hot  
90/5 nitrogen/hydrogen gas is applied, solder  
temperature should be approximately 290°C.  
B. DO NOT expose the MAAM71100 to a tem-  
perature greater than 320°C for more than 20  
seconds. No more than 3 seconds of scrub-  
bing should be required for attachment.  
1000 pF Min.  
RF OUT  
RF IN  
Bonding  
A. Ball or wedge bond with 1.0 mil diameter gold  
wire of 3.0 mil x 0.5 mil ribbon. Thermosonic  
bonding with a nominal stage temperature of  
150°C and a ball bonding force of 40 to 50  
grams or wedge bonding force of 18 to 22  
grams is recommended. Ultrasonic energy and  
time should be adjusted to the minimum levels  
necessary to achieve reliable bonds.  
VGG  
(VG1, VG2  
)
3. Nominal bias is obtained by first connecting -1.2 volts to pads  
VG1 and VG2 followed by connecting +8 volts to pads VD1 and  
VD2  
(note sequence).  
4. The recommended VDD range is +6 to +9 volts.  
5. Optional on-chip resistor networks are used by connecting a  
nominal –5 volts to pad “A” and connecting pad “B”, “C”, “D”,  
B. Bonds should be started on the die and termi-  
nated on the package.  
C. Bonding pads are 4.0 x 4.0 mils minimum.  
or “E” to pad VG1; and VG2  
.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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