MAAM71200-H1 [TE]
Low Noise GaAs MMIC Amplifier 7.5 - 12 GHz; 低噪声砷化镓MMIC放大器7.5 - 12 GHz的
| 型号： | MAAM71200-H1 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Low Noise GaAs MMIC Amplifier 7.5 - 12 GHz |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Noise GaAs MMIC Amplifier
7.5 - 12 GHz
MAAM71200-H1
V 2.00
Features
CR-16
●
2.7 dB Typical Noise Figure
●
15.5 dB Typical Gain
●
Single Bias Supply
●
Low Current Consumption
●
DC Decoupled RF Input and Output
●
Ceramic Package
Description
M/A-COM’s MAAM71200-H1 is a wide band, low noise
GaAs MMIC amplifier enclosed in a leadless ceramic
package1. The MAAM71200-H1 is a packaged version of
M/A-COM’s MAAM71200 low noise MMIC amplifier chip.
The fully monolithic design operates in 50 ohms without
the need for external components.
Dimensions are in inches.
The MAAM71200-H1 is ideally suited for microstrip
assemblies where wire or ribbon bonds are used for inter-
connects. Typical applications include radar, EW and
communication systems.
The MAAM71200 is fabricated using a mature 0.5-micron
gate length GaAs process for increased reliability and per-
formance repeatability.
Typical Electrical Specifications, T = +25°C, V
A
= 4 V
DD
Parameter
Units
Min.
Typ.
Max.
Gain
dB
14.5
15.5
2.7
Noise Figure
dB
3.5
Input VSWR
2.0:1
1.8:1
11
Output VSWR
Output 1dB Compression Point
Third Order Intercept Point
Reverse Isolation
Bias Current (IDD)
dBm
dBm
dB
21
30
mA
40
55
1.Consult factory for a leaded ceramic package version.
V 2.00
Absolute Maximum Ratings1
Functional Diagram
Parameter
Absolute Maximum
Input Power
+20 dBm
V
+9 Volts
DD
Junction Temperature
Storage Temperature
Thermal Resistance
+150°C
-65°C to +150°C
175°C/W
1. Operation of this device outside any of these limits may
cause permanent damage
1. Case must be electrically connected to RF and DC ground.
2.The RF bond inductance from the transmission line to the
package is assumed to be 0.25 nH. Variations in bond
induc-
gain slope. A
tance will result in variations in VSWR and
small capacitive stub
may be needed depending on the
inductance realized in the final assembly.
3.Nominal bias is obtained by setting V
= 4 volts.
DD
4.Increasing V
from 4 volts to 6 volts increases output
DD
power and high frequency bandwidth.
Typical Performance
GAIN vs FREQUENCY
NOISE FIGURE vs FREQUENCY
5
20
+100°C
-50°C
18
4
+25°C
+25°C
16
14
3
2
12
1
+100°C
-50°C
10
0
7
8
9
10
11
12
13
7
8
9
10
11
12
13
FREQUENCY (GHz)
FREQUENCY (GHz)
OUTPUT POWER @ 1dB COMPRESSION
vs FREQUENCY
INPUT & OUTPUT vs FREQUENCY
4.0
3.5
3.0
2.5
2.0
1.5
1.0
15
13
11
9
Output
Input
7
5
7
8
9
10
11
12
13
7
8
9
10
11
12
13
FREQUENCY (GHz)
FREQUENCY (GHz)
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