MAAM71200-H1_V7 [TE]
Low Noise GaAs MMIC Power Amplifier; 低噪声砷化镓MMIC功率放大器
| 型号： | MAAM71200-H1_V7 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Low Noise GaAs MMIC Power Amplifier |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAAM71200-H1
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Rev. V7
Features
Functional Diagram
•
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•
•
•
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Noise Figure: 2.7 dB Typical
Gain: 15.5 dB Typical
Single Bias Supply
Low Current Consumption
DC Decoupled RF Input and Output
Ceramic Package
Description
The MAAM71200-H1 is a wide band, low noise
GaAs MMIC amplifier enclosed in a leadless
ceramic package.
The MAAM71200-H1 is a
packaged version of The MAAM71200 low noise
MMIC amplifier chip. The fully monolithic design
operates in 50 Ω without the need for external
components.
1. Case must be electrically connected to RF and DC ground.
2. The RF bond inductance from the transmission line to the
package is assumed to be 0.25 nH. Variations in bond
inductance will result in variations in VSWR and gain slope.
A small capacitive stub may be needed depending on the
inductance realized in the final assembly.
3. Nominal bias is obtained by setting VDD = 4 V.
4. Increasing VDD from 4 volts to 6 volts increases output power
and high frequency bandwidth.
The MAAM71200-H1 is ideally suited for microstrip
assemblies where wire or ribbon bonds are used for
interconnects. Typical applications include radar,
EW and communication systems.
The MAAM71200-H1 is fabricated using a mature
0.5-micron gate length GaAs process for increased
reliability and performance repeatability.
Absolute Maximum Ratings 5,6
Parameter
Input Power
Absolute Maximum
+20 dBm
Ordering Information
Part Number
Package
VDD
+7 V
Junction Temperature
Thermal Resistance
Storage Temperature
+150°C
MAAM71200-H1
Bulk Packaging
+175°C/W
-65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM Technology does not recommend sustained
operation near these survivability limits.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MAAM71200-H1
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Rev. V7
Electrical Specifications: TA = 25°C, VDD = 4 V
Parameter
Gain
Test Conditions
Units
dB
Min.
14.5
—
Typ.
15.5
2.7
Max.
—
—
—
Noise Figure
dB
3.5
Input VSWR
Output VSWR
—
—
Ratio
Ratio
—
—
2.0:1
1.8:1
—
—
Output 1 dB Compression Point
Third Order Intercept Point
Reverse Isolation
—
—
—
—
dBm
dBm
dB
—
—
—
—
11
21
30
40
—
—
—
55
Bias Current (IDD
)
mA
Typical Performance Curves
Noise Figure
Gain
5
4
3
2
1
20
+25 C
-50 C
+100 C
+25 C
-50 C
+100 C
18
16
14
12
10
7
8
9
10
11
12
13
7
8
9
10
11
12
13
Frequency (GHz)
Frequency (GHz)
Input and Output VSWR
Output Power @ 1 dB Compression
4.0
15
INPUT
OUTPUT
3.5
3.0
2.5
2.0
1.5
1.0
13
11
9
7
5
7
8
9
10
11
12
13
7
8
9
10
11
12
13
Frequency (GHz)
Frequency (GHz)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MAAM71200-H1
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Rev. V7
CR-16
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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