MAAPGM0027-DIE [TE]
2.0-4.0 GHz 1W Power Amplifier; 2.0-4.0 GHz的1W功率放大器
| 型号： | MAAPGM0027-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 2.0-4.0 GHz 1W Power Amplifier |
| 文件： | 总6页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ MSAG™ MESFET Process
♦ Proven Manufacturability and Reliability
ꢀNo Airbridges
ꢀPolyimide Scratch Protection
ꢀNo Hydrogen Poisoning Susceptibility
Description
The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input
and output. It can be used as a power amplifier stage or as a driver
stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
Primary Applications
♦ Wireless Local Loop 3.4-3.6 GHz
♦ MMDS 2.5-2.7 GHz
♦ Radar
M/A-COM’s MSAG™ process features robust silicon-like manufactur-
ing processes, planar processing of ion implanted transistors, multiple
implant capability enabling power, low-noise, switch and digital FETs
on a single chip, and polyimide scratch protection for ease of use with
automated manufacturing processes. The use of refractory metals and
the absence of platinum in the gate metal formulation prevents hydro-
gen poisoning when employed in hermetic packaging.
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 230mA2, Pin = 10 dBm
Parameter
Bandwidth
Symbol
Typical
2.0-4.0
30
Units
GHz
dBm
%
f
Output Power
POUT
PAE
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
35
29
dBm
dB
P1dB
G
22
VSWR
VSWR
1.8:1
1.4:1
Output VSWR
Gate Supply Current
Drain Supply Current
< 2
< 350
37
mA
mA
IGG
IDD
Output Third Order Intercept
OTOI
IM3
dBm
dBm
3rd Order Intermodulation Distortion
Single Carrier Level = 21 dBm
-15
5th Order Intermodulation Distortion
Single Carrier Level = 21 dBm
IM5
-39
dBm
Noise Figure
2nd Harmonic
NF
2f
6
dB
-15
-25
dBc
dBc
3rd Harmonic
3f
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.5V to achieve indicated IDQ
.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Maximum Operating Conditions 3
Parameter
Absolute Maximum
Units
dBm
V
Symbol
Input Power
PIN
15.0
+12.0
-3.0
Drain Supply Voltage
VDD
VGG
IDQ
Gate Supply Voltage
V
Quiescent Drain Current (No RF, 40% Idss)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
360
mA
W
PDISS
TJ
3.3
180
°C
Storage Temperature
TSTG
-55 to +150
310
°C
Die Attach Temperature
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than typical values may result in
performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Symbol
Min
4.0
Typ
8.0
Max
10.0
Unit
V
VDD
VGG
PIN
-2.4
-2.0
10
-1.5
13.0
150
V
dBm
TJ
Junction Temperature
Thermal Resistance
MMIC Base Temperature
°C
°C/W
°C
23.9
ΘJC
TB
Note 4
4. Maximum MMIC Base Temperature = 150°C —ΘJC* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V. (See
Note 2 above)
3. Adjust VGG to set IDQ
.
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
50
50
POUT
PAE
40
30
20
10
0
40
30
20
10
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V
and Pin = 10 dBm.
50
40
30
20
10
0
50
40
30
20
10
0
POUT
PAE
4
5
6
7
8
9
10
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 3 GHz.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
50
VDD = 4
VDD = 8
VDD = 6
VDD = 10
40
30
20
10
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
6
GAIN
Input VSWR
Output VSWR
25
20
15
10
5
5
4
3
2
1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Frequency (GHz)
Figure 4. Small Signal and VSWR vs Frequency at VDD = 8V.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Mechanical Information
Chip Size: 2.980 x 1.580 x 0.075 mm (117 x 62 x 3 mils)
1.580 mm.
1.378 mm.
0.840 mm.
0.840 mm.
0.202 mm.
0
0
Figure 5. Die
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
Size (mils)
Size (μm)
100 x 200
200 x 150
150 x 150
RF In and Out
4 x 8
8 x 6
6 x 6
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
VDD
0.1 μF
100 pF
RFOUT
RFIN
100 pF
VGG
0.1 μF
Figure 6. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW test-
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques.
For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge
bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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