MAGX-000025-150000-V1 [TE]
GaN on SiC HEMT Power Transistor;
| 型号： | MAGX-000025-150000-V1 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN on SiC HEMT Power Transistor |
| 文件： | 总7页 (文件大小：1220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1
Features
MAGX-000025-150000
GaN on SiC Transistor Technology
Broadband Unmatched Transistor
Common-Source Configuration
+50 V Typical Operation
Class AB Operation
RoHS* Compliant and 260°C Reflow Compatible
MTTF = 600 years (TJ < 200 °C)
Applications
General purpose for pulsed or CW applications
Description
The MAGX-000025-150000 is a gold-metalized
Gallium Nitride (GaN) on Silicon Carbide (SiC) RF
power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation under
more extreme mismatch load conditions compared
with older semiconductor technologies.
Ordering Information
Part Number
Description
MAGX-000025-150000
Flanged
1200-1400 MHz
Evaluation Board
MAGX-000025-SB2PPR
MAGX-000025-SB1PPR
2500 MHz
Evaluation Board
Functional Schematic
Pin No.
Function
1
2
3
4
Vgg/RF Input
Vdd/RF Output
Vgg/RF Input
Vdd/RF Output
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1
Electrical Specifications1: Freq. = 1200-1400 MHz, TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: VDD = 50 V, IDQ = 600 mA, 300 µs Pulse, 20% Duty
Output Power
Power Gain
PIN= 2.5 W
PIN= 2.5 W
PIN= 2.5 W
PIN= 2.5 W
PIN= 2.5 W
PIN= 2.5 W
POUT
GP
150
170
18
-
W
dB
%
dB
-
17.5
-
Drain Efficiency
Droop
ηD
52
-
58
-
0.3
-
Droop
VSWR-S
VSWR-T
0.2
5:1
10:1
Load Mismatch Stability
Load Mismatch Tolerance
-
-
-
-
Typical RF Characteristics2: Freq. = 2500 MHz, TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: VDD = 50 V, IDQ = 600 mA, 300 µs Pulse, 20% Duty
Output Power
Power Gain
PIN= 7 W
PIN= 7 W
PIN= 7 W
PIN= 7 W
PIN= 7 W
PIN= 7 W
POUT
GP
-
-
-
-
-
-
125
12.5
48
-
-
-
-
-
-
W
dB
%
dB
-
Drain Efficiency
Droop
ηD
Droop
VSWR-S
VSWR-T
0.1
Load Mismatch Stability
Load Mismatch Tolerance
5:1
10:1
-
RF Functional Tests: VDD = 28 V, IDQ = 600 mA, CW
Input Power
Power Gain
POUT= 35 W
PIN
GP
-
-
-
-
-
2
12
-
-
-
-
-
W
dB
%
-
POUT= 35 W
POUT= 35 W
POUT= 35 W
POUT= 35 W
Drain Efficiency
ηD
45
Load Mismatch Stability
Load Mismatch Tolerance
VSWR-S
VSWR-T
5:1
10:1
-
Electrical Characteristics3: TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
DC Characteristics (Per Side):
Drain-Source Leakage Current
Gate Threshold Voltage
VGS = -8 V, VDS = 175 V
VDS = 5 V, ID = 75 mA
VDS = 5 V, ID = 17.5 mA
IDS
VGS (TH)
GM
-
2
5.28
-2
mA
V
-5
2
-3.1
2.8
Forward Transconductance
Dynamic Characteristics (Per Side):
Input Capacitance
-
S
VDS = 0 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
CISS
COSS
CRSS
-
-
-
26.4
11.2
1
-
-
-
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
1. Electrical Specifications measured in MACOM RF evaluation board.
2. Typical RF Characteristics measured in MACOM RF evaluation board.
3. All DC Characteristics are per side.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1
Absolute Maximum Ratings4,5,6,7,8
Parameter
Limit
+65 V
Supply Voltage (VDD
)
)
Supply Voltage (VGS
-8 to -2 V
5.5 A
Supply Current (IDMAX) for CW operation at VDD = 28 V
Supply Current (IDMAX) for pulsed operation at VDD = 50 V
Input Power (PIN) for CW operation at VDD = 28 V
8.3 A
PIN (typical) + 1.5 dB
40 dBm
200ºC
Input Power (PIN) for pulsed operation at VDD = 50 V
Absolute Max. Junction/Channel Temperature
Power Dissipation at 85 ºC for CW operation at VDD = 28 V
Power Dissipation at 85 ºC for pulsed operation at VDD = 50 V
79 W
177 W
Thermal Resistance, (TJ= 200 ºC)
VDD = 28 V, IDQ = 600 mA, Pout = 35 W, CW
1.45 ºC/W
0.65 ºC/W
Thermal Resistance, (TJ= 200 ºC)
VDD = 50 V, IDQ = 600 mA, Pin = 7 W, pulsed
Operating Temperature
Storage Temperature
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
300 V
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
700 V
4. Operation of this device above any one of these parameters may cause permanent damage.
5. For CW operation, Input Power limit is +1.5 dB over nominal drive required to achieve POUT = 35 W.
6. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
7. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V.
8. Pulsed operation is specified for a 300 µs Pulse, 20% Duty.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1
Test Fixture Impedances (Per Side)
Correct Device Sequencing
Turning the device ON
F (MHz)
ZIF(1,2) (Ω)
ZOF(1,2) (Ω)
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage:
[(300 µs, 20%) = 50 V; (2.5 GHz, CW) = 28 V].
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
1200
1300
1400
2500
0.8 + j0.5
0.9 + j0.2
0.5 - j0.2
1.2 - j3.4
9.4 + j4.1
7.2 + j3.0
5.4 + j3.4
3.1 + j1.4
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1
Test Fixture Assembly (1200-1400 MHz)
Test Fixture Assembly (2500 MHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1
Application Section
Typical Performance Curves
1200-1400 MHz, 300 µs Pulse, 20% Duty, VDD = 50 V, Idq = 600 mA
Output Power Vs. Input Power
Drain Efficiency Vs. Output Power
70
60
50
40
30
20
10
0
225
200
175
150
125
100
75
1200
1200
1300
1400
1300
1400
50
25
0
0
25
50
75
100
125
150
175
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
PIN (W)
POUT (W)
2500 MHz, 300 µs Pulse, 20% Duty, VDD = 50 V, Idq = 600 mA
Output Power Vs. Input Power
Drain Efficiency Vs. Output Power
140
60
120
100
80
60
40
20
0
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
PIN (W)
POUT (W)
2500 MHz, CW, VDD = 28 V, Idq = 600 mA
Output Power Vs. Input Power
Drain Efficiency Vs. Output Power
45
60
40
35
30
25
20
15
10
5
50
40
30
20
10
0
0
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
3.5
4
POUT (W)
PIN (W)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1
Outline Drawing MAGX-000025-150000
MACOM
GX0025-150
LOT NO. / SER NO.
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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