MASW-004100-1193_2 [TE]
HMIC SP4T Silicon PIN Diode Switch; HMIC SP4T硅PIN二极管开关
| 型号： | MASW-004100-1193_2 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HMIC SP4T Silicon PIN Diode Switch |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MASW-004100-1193
HMIC™ SP4T Silicon PIN Diode Switch
V3
Features
♦
♦
♦
♦
Ultra Broad Bandwidth: 50MHz to 26GHz
0.9 Insertion Loss , 34dB Isolation at 20GHz
50nS Switching Speed
Reliable, Fully Monolithic, Glass Encapsulated
Construction
♦
♦
+33dBm Power Handling
RoHS Compliant
Description
The MASW-004100-1193 is a SP4T, series-shunt,
broad band, PIN diode, switch made with M/A-COM
Tech’s unique HMICTM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310.
This process allows for the incorporation of silicon
pedestals that form the series and shunt diodes or
vias by imbedding them in a low loss, low dispersion
glass. This hybrid combination of silicon and glass
gives HMIC switches exceptional low loss and
remarkable high isolation through low millimeter-
wave frequencies.
J4
J3
Applications
This high performance switch is suitable for use in
multi-band ECM, radar, and instrumentation control
circuits where high isolation to insertion loss ratios
are required. With a standard +5V/-5V, TTL
controlled PIN diode driver, 50nS switching speeds
are achieved.
J2
J5
Absolute Maximum Ratings
TAMB = +25°C ( Unless Otherwise Specified )
Parameter
Value
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
J1
RF C.W. Incident Power (± 20mA)
Bias Current ( Forward )
Applied Voltage ( Reverse )
Notes:
+33dBm
± 20mA
-25 Volts
Exceeding these limits may cause permanent
damage.
Maximum operating conditions for the
combination of RF Power, D.C. Bias, and
temperature: +33dBm, @ 15mA/Diode @ +85°C
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-004100-1193
HMIC™ SP4T Silicon PIN Diode Switch
V3
Typical Driver Connections
Condition
of
Condition
of
Condition
of
Condition
Control Level ( DC Current ) at Port
of
RF Output
RF Output
RF Output
RF Output
J2
J3
J4
J5
J1-J2
Low Loss
Isolation
Isolation
Isolation
J1-J3
Isolation
Low Loss
Isolation
Isolation
J1-J4
Isolation
Isolation
Low Loss
Isolation
J1-J5
Isolation
Isolation
Isolation
Low Loss
-20mA
+20mA
+20mA
+20mA
+20mA
-20mA
+20mA
+20mA
+20mA
+20mA
-20mA
+20mA
+20mA
+20mA
+20mA
-20mA
Electrical Specifications
AMB = +25oC, ± 20mA Bias Current (On-Wafer Measurements)
T
Parameter
Frequency
Minimum
Nominal
Maximum
Units
Insertion Loss
Isolation
20 GHz
20 GHz
20 GHz
20 GHz
0.9
34
15
15
1.3
dB
dB
dB
dB
28
Input Return Loss
Output Return Loss
Switching Speed1
10 GHz
50
nS
Notes:
Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver
output parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150Ω – 220Ω to achieve 50nS
rise and fall times.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-004100-1193
HMIC™ SP4T Silicon PIN Diode Switch
V3
Operation of the MASW-004100-1193 Switch
The simultaneous application of negative DC current to the low loss port and positive DC current to the
remaining isolated ports as shown in Figure 1 will operate the MASW-004100-1193 PIN diode switch. The
backside metalized area of the die is the RF and DC return ground plane. The DC return is achieved on
common Port J1. A current source should be used to supply the DC control currents. The voltages at
these points will not exceed ±1.5 volts and are typically 1.2 volts for supply currents up to ± 20 mA. For
the port in low loss state, the series diode must be forward biased and the shunt diode reverse biased.
For all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A
typical bias network design which should provide >30 dB RF to DC isolation is shown in Figure 1. Best
insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the
DC return path, J1 (not shown). A minimum value of |-2V| is recommended at this return node and
can be obtained using a standard, 65V, TTL controlled, PIN diode driver.
2 – 18 GHz Bias Network Schematic
J1
39 pF
22 pF
DC Bias
39 pF
22nH
100 Ω
22nH
HMIC Switch Die
J5
22 pF
J2
J4
J3
Fig. 1
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-004100-1193
HMIC™ SP4T Silicon PIN Diode Switch
V3
Typical Microwave Performance
MASW-004100-1193 INSERTION LOSS
0.0
-0.5
-1.0
-1.5
-2.0
J1-J2
J1-J3
J1-J4
J1-J5
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Frequency (GHz)
MASW-004100-1193 INPUT RETURN LOSS
0
-10
-20
-30
-40
-50
-60
J1-J2
J1-J3
J1-J4
J1-J5
0
5
10
15
20
25
30
Frequency (GHz)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-004100-1193
HMIC™ SP4T Silicon PIN Diode Switch
V3
Typical Microwave Performance
MASW-004100-1193 OUTPUT RETURN LOSS
0
-5
-10
-15
-20
-25
-30
-35
J2
J3
J4
J5
0
5
10
15
20
25
30
Frequency (GHz)
MASW-004100-1193 ISOLATION
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
J1-J2
J1-J3
J1-J4
J1-J5
0
5
10
15
20
25
30
Frequency (GHz)
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-004100-1193
HMIC™ SP4T Silicon PIN Diode Switch
V3
ASSEMBLY INSTRUCTIONS
Cleanliness
The chip should be handled in a clean environment free of organic contamination.
Electro-Static Sensitivity
The MASW-004100-1193 PIN switch is ESD, Class 1A sensitive (HBM). The proper ESD handling procedures
must be used.
Wire Bonding
Thermosonic wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A
stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy, if necessary, should
be adjusted to the minimum power required to achieve a good bond. RF wire and ribbon lengths should be kept
as short as possible to minimize parasitic inductance.
Mounting
These chips have Ti-Pt-Au back metal and can be mounted using 80Au/20Sn eutectic solder or electrically
conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants.
Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool
tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be 290°C. The chip should
not be exposed to temperatures greater than 320°C for more than 10 seconds. No more than 3 seconds should
be required for the die attachment.
Silver Epoxy Die Attachment
A controlled thickness of no more than 2 mils is recommended for the best electrical and thermal conductivity. A
thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage.
Cure epoxy per manufacturer’s recommended schedule. Typically +150°C for 1 hour.
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-004100-1193
HMIC™ SP4T Silicon PIN Diode Switch
V3
MASW-004100-1193
Chip Dimensions
INCHES
MM
DIM
NOMINAL
NOMINAL
A
.066
.047
1.67
1.19
B
C
.054
1.37
D
.012
0.31
E
.043
1.08
F
.009
0.22
G
.004
0.11
H
.004
0.11
I
.033
0.84
J
.061
1.56
Thickness
Bond Pads
.005
.120
.005X.005
0.120X.0120
Notes:
1. Topside and backside metallization is gold , 2.5mm thick typical.
2. Yellow areas indicate wire bonding pads
Ordering Information
Part Number
Package
MASW-004100-11930W
MASW-004100-11930G
Waffle Pack
Gel Pack
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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