MASW-004100 [TE]

Monolithic PIN SP4T Diode Switch; 单片PIN SP4T开关二极管
MASW-004100
型号: MASW-004100
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

Monolithic PIN SP4T Diode Switch
单片PIN SP4T开关二极管

二极管 开关
文件: 总6页 (文件大小:277K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Monolithic PIN SP4T Diode Switch  
MASW-004100-1193  
Rev. 2  
Features  
Ultra Broad Bandwidth: 50MHz to 26GHz  
0.9 Insertion Loss , 34dB Isolation at 20GHz  
50nS Switching Speed  
Reliable, Fully Monolithic, Glass Encapsulated  
Construction  
Description  
The MASW-004100-1193 is a SP4T series-shunt  
broad band switch made with M/A-COM’s unique  
HMICTM (Heterolithic Microwave Integrated Circuit)  
process, US Patent 5,268,310. This process allows the  
incorporation of silicon pedestals that form series and  
shunt diodes or vias by imbedding them in a low loss,  
low dispersion glass. This hybrid combination of silicon  
and glass gives HMIC switches exceptional low loss  
and remarkable high isolation through low millimeter-  
wave frequencies.  
Applications  
These high performance switches are suitable for use  
in multi-band ECM, radar, and instrumentation control  
circuits where high isolation to insertion loss ratios are  
required. With a standard +5V/-5V, TTL controlled PIN  
diode driver, 50nS switching speeds are achieved.  
J4  
J3  
Absolute Maximum Ratings  
TAMB = +25°C ( Unless Otherwise Specified )  
J2  
J5  
Parameter  
Value  
-65°C to +125°C  
-65°C to +150°C  
+33dBm  
Operating Temperature  
Storage Temperature  
RF C.W. Incident Power (± 20mA)  
Bias Current ( Forward )  
Applied Voltage ( Reverse )  
± 20mA  
J1  
-25 Volts  
Notes:  
Exceeding these limits may cause permanent  
damage.  
1
Monolithic Pin Diode Series-Shunt Switch  
MASW-004100-1193  
Rev 2  
Electrical Specifications @ TAMB = +25oC, ± 20mA Bias Current (On-Wafer Measurements)  
Parameter  
Insertion Loss  
Frequency  
20 GHz  
20 GHz  
20 GHz  
20 GHz  
Minimum  
Nominal  
0.9  
Maximum  
Units  
dB  
1.3  
Isolation  
28  
34  
dB  
Input Return Loss  
15  
dB  
Output Return Loss  
15  
dB  
Switching Speed1  
10 GHz  
50  
nS  
Notes:  
1.) Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver output  
parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150– 220to achieve 50nS  
rise and fall times.  
Typical Driver Connections  
Condition of  
RF Output  
Condition of  
RF Output  
Condition of  
RF Output  
Condition of  
RF Output  
Control Level ( DC Current ) at Port  
J2  
J3  
J4  
J5  
J1-J2  
Low Loss  
Isolation  
Isolation  
Isolation  
J1-J3  
Isolation  
Low Loss  
Isolation  
Isolation  
J1-J4  
Isolation  
Isolation  
Low Loss  
Isolation  
J1-J5  
Isolation  
Isolation  
Isolation  
Low Loss  
-20mA  
+20mA  
+20mA  
+20mA  
+20mA  
-20mA  
+20mA  
+20mA  
+20mA  
+20mA  
-20mA  
+20mA  
+20mA  
+20mA  
+20mA  
-20mA  
Assembly Considerations  
Cleanliness  
Chips should be handled in a clean environment free of organic contamination.  
Electro-Static Sensitivity  
The MASW-004100-1193 PIN switch is ESD, Class 1A sensitive (HBM). Proper ESD handling equipment and  
procedures should be used.  
Die Wire Bonding  
Thermosonic wedge wire bonding using ¼ x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is  
recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy should  
be adjusted to the minimum required. RF bonds should be as short as possible.  
Die Mounting  
These chips have a Ti-Pt-Au back metal stack that can be die mounted using a gold-tin eutectic solder preform or  
conductive Ag epoxy. Mounting surface must be clean and flat.  
Eutectic Die Attachment  
An 80/20 Gold-Tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool tip  
temperature of 265°C. When hot gas is applied, the tool tip temperature should be ~290°C. The chip should not be  
exposed to temperatures greater than 320°C for more than 20 seconds. No more than three seconds should be  
required for the attachment.  
Electrical Epoxy Die Attachment  
Assembly should be preheated to 125-150°C. A controlled thickness of 2 mils is recommended for best electrical and  
thermal conductivity. A thin epoxy fillet should be visible around the outer perimeter of the chip after placement to  
ensure complete coverage. Cure epoxy per manufacturer’s schedule.  
2
Typical Microwave  
Performance  
MASW-004100-1193 INSERTION LOSS  
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
J1-J2  
J1-J3  
J1-J4  
J1-J5  
0.0  
5.0  
10.0  
15.0  
20.0  
25.0  
30.0  
Frequency (GHz)  
MASW-004100-1193 INPUT RETURN LOSS  
0
-10  
-20  
-30  
-40  
-50  
-60  
J1-J2  
J1-J3  
J1-J4  
J1-J5  
0
5
10  
15  
20  
25  
30  
Frequency (GHz)  
3
Typical Microwave  
Performance  
MASW-004100-1193 OUTPUT RETURN LOSS  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
J2  
J3  
J4  
J5  
0
5
10  
15  
20  
25  
30  
Frequency (GHz)  
MASW-004100-1193 ISOLATION  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
J1-J2  
J1-J3  
J1-J4  
J1-J5  
0
5
10  
15  
20  
25  
30  
Frequency (GHz)  
4
Operation of the MASW-004100-1193 PIN Switch  
Operation of the MASW-004100-1193 PIN switch is achieved by the simultaneous application of negative DC current  
to the low loss port and positive DC current to the remaining isolated switching ports as shown in Figure 1. The  
backside area of the die is the RF and DC return ground plane. The DC return is achieved on the common port, J1.  
The DC control currents should be supplied by constant current source. The voltages at these points will not exceed  
±1.5 volts (1.2 volts typical) for supply currents up to ±20 mA. In the low loss state, the series diode must be forward  
biased and the shunt diode reverse biased. For all the isolated ports, the shunt diode is forward biased and the series  
diode is reverse biased. The bias network design should yield > 30 dB RF to DC isolation.  
Best insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return  
path, (J1 ). A minimum value of |-2V| is recommended at this return node, which is achievable with a standard,  
±5V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz Operation is shown in Figure 1.  
2 – 18 GHz Bias Network  
J1  
39 pF  
22 pF  
DC Bias  
39 pF  
22nH  
100  
22nH  
HMIC Switch Die  
J5  
J2  
22 pF  
J4  
J3  
Fig. 1  
5
MASW-004100-1193  
Chip Dimensions  
INCHES  
MM  
DIM  
NOMINAL  
NOMINAL  
A
.066  
.047  
1.67  
1.19  
B
C
.054  
1.37  
D
.012  
0.31  
E
.043  
1.08  
F
.009  
0.22  
G
.004  
0.11  
H
.004  
0.11  
I
.033  
0.84  
J
.061  
1.56  
Thickness  
Bond Pads  
.005  
.120  
.005X.005  
0.120X.0120  
Ordering Information  
Part Number  
Package  
MASW-004100-11930W  
Waffle Pack  
6

相关型号:

MASW-004100-1193

HMIC™ Silicon PIN Diode Switch
TE

MASW-004100-11930G

HMIC™ Silicon PIN Diode Switch
TE

MASW-004100-11930W

Monolithic PIN SP4T Diode Switch
TE

MASW-004100-1193_2

HMIC SP4T Silicon PIN Diode Switch
TE

MASW-004102-1276

Integrated Bias Network
TE

MASW-004102-12760_14

Silicon SP4T PIN Diode Switch with Integrated Bias Network
TE

MASW-004103-001SMB

Silicon SP4T Surface Mount HMIC PIN Diode Switch
TE

MASW-004103-1365

HMICTM Silicon PIN Diode SP4T Switch
TE

MASW-004103-13650G

HMICTM Silicon PIN Diode SP4T Switch
TE

MASW-004103-13650P

HMICTM Silicon PIN Diode SP4T Switch
TE

MASW-004103-13655P

Silicon SP4T Surface Mount HMIC PIN Diode Switch
TE

MASW-004103-1365_15

Silicon SP4T Surface Mount HMIC PIN Diode Switch
TE