MASW-011053_15 [TE]
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network;型号: | MASW-011053_15 |
厂家: | TE CONNECTIVITY |
描述: | HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network |
文件: | 总6页 (文件大小:707K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Rev. V1
Features
Functional Diagram
Broad Bandwidth Specified up to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Fully Monolithic
J5
J3
J6
C
C
L
L
C
Glass Encapsulate Construction
RoHS Compliant* and 260°C Reflow Compatible
SW3
SW1
J2
J4
C
C
C
Description
SW2
L
The MASW-011053 device is a SP3T broad band
switch with integrated bias networks utilizing
MACOM’s patented HMIC (Heterolithic Microwave
Integrated Circuit) process. This process allows the
incorporation of silicon pedestals that form series
and shunt diodes or vias by imbedding them in low
loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance with exceptional repeatability through
low millimeter frequencies. Large bond pads
facilitate the use of low inductance ribbon bonds,
while gold backside metallization allows for manual
or automatic chip bonding via 80/20 - Au/Sn,
62/36/2 - Sn/Pb/Ag solders or electrically conductive
silver epoxy.
L
C
C
J8
J7
J1
Pin Configuration2
Pin
J1
J2
J3
J4
J5
J6
J7
J8
Function
Antenna
RFIN
RFIN
RFIN
Bias of J2
Bias of J3
Bias of J4
Ordering Information1
Part Number
Package
MASW-011053-47300G
Die in Gel Pack
Bias of Antenna
MASW-011053-47300W
1. Die quantity varies.
Die in Waffle Pack
2. The exposed metallization on the chip bottom must be
connected to RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Rev. V1
Electrical Specifications:
TA = +25°C, Z0 = 50 Ω, PIN = 0 dBm, DC Control Current = 20 mA (unless otherwise noted)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
2 GHz
6 GHz
12 GHz
18 GHz
1.0
0.6
0.8
1.1
2.0
1.1
1.3
1.9
Insertion Loss
dB
—
2 GHz
6 GHz
12 GHz
18 GHz
54
47
40
36
62
55
50
47
Input to Output Isolation
Input Return Loss
dB
dB
—
—
—
2 GHz
6 GHz
12 GHz
18 GHz
14
15
16
14
—
—
2 GHz
6 GHz
12 GHz
18 GHz
46.0
48.8
50.8
45.0
Input/Output IP3 @ 5 dBm
dBm
2 GHz
6 GHz
12 GHz
18 GHz
66.3
66.8
66.0
68.3
Input/Output IP2 @ 5 dBm
Switching Speed3
dBm
ns
—
—
—
—
—
50
3. Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC output spiking
network, R = 50 – 200 Ω , C = 390 – 560 pF.
Absolute Maximum Ratings4,5
Parameter
Absolute Maximum
Handling Procedures
Please observe the following precautions to avoid
damage:
Forward Bias Current
60 mA
Reverse Bias Voltage
(RF & DC)
50 V
Static Sensitivity
RF Incident Power
Junction Temperature
Operating Temperature
Storage Temperature
33 dBm CW
+175°C
HMIC Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.
-65°C to +125°C
-65°C to +150°C
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. MACOM does not recommend sustained operation near these
survivability limits.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Rev. V1
Truth Table
Condition of
DC Control Current6
RF Output
J5
J6
J7
J1-J2
J1-J3
J1-J3
-20 mA
+20 mA
+20 mA
Low Loss
Isolation
Isolation
Isolation
Low Loss
+20 mA
+20 mA
-20 mA
+20 mA
+20 mA
-20 mA
Isolation
Isolation
Low Loss
Isolation
6. The forward diode voltage drop between:
J8 to J5, J6 or J7 is 1.0 V typical.
J5, J6 or J7 to GND is 0.9 V typical.
Circuit Schematic
J5
J3
J6
C4
L3
Pin Diode 6
C7
C6
L1
Pin Diode 5
J4
J2
Pin Diode 1
Pin Diode 2
Pin Diode 4
C3
C2
Pin Diode 3
C5
L4
L2
J7
J8
C1
J1
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Rev. V1
Typical Performance Curves
Isolation @ 5 V, 5 mA
Isolation @ 5 V, +25°C
-30
-30
5 mA
40 mA
-40
-40
-50
-60
-70
-80
-50
-60
-70
-80
+25°C
+85°C
2
4
6
8
10
12
14
16
18
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
Insertion Loss @ 5 V, +25°C
Insertion Loss @ 5 V, 20 mA
0
0
5 mA
+25°C
+85°C
10 mA
20 mA
40 mA
-0.3
-0.6
-0.9
-1.2
-1.5
-0.3
-0.6
-0.9
-1.2
-1.5
2
4
6
8
10
12
14
16
18
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
Output Return Loss @ 5 V, +25°C
Input Return Loss @ 5 V, +25°C
0
0
5 mA
5 mA
10 mA
20 mA
40 mA
10 mA
20 mA
40 mA
-10
-20
-30
-40
-10
-20
-30
-40
2
4
6
8
10
12
14
16
18
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Rev. V1
Typical Performance Curves
IP2
IP3
80
70
60
50
40
80
70
60
50
40
5 V @ +25°C
2 V @ +25°C
5 V @ +85°C
2 V @ +85°C
5 V @ +25°C
2 V @ +25°C
5 V @ +85°C
2 V @ +85°C
0
5
10
15
20
0
5
10
Frequency (GHz)
15
20
Frequency (GHz)
Junction Temperature
Compression Power
140
0.6
120
0.5
5 mA
5 mA
10 mA
20 mA
10 mA
20 mA
100
0.4
40 mA
40 mA
80
0.3
60
40
20
0.2
0.1
0.0
10
15
20
25
30
35
10
15
20
25
30
35
CW Incident Power (dBm)
CW Incident Power (dBm)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Rev. V1
Wire/Ribbon and Die Attachment Recommendations
Wire Bonding:
Thermosonic wedge wire bonding using 0.00025” x 0.003” ribbon or 0.001” diameter gold wire is
recommended. A heat stage temperature of 150oC and a force of 18 to 22 grams should be used. Ultrasonic
energy should be adjusted to the minimum required to achieve a good bond. RF bond wires should be kept as
short and straight as possible.
Mounting
The HMIC switches have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder
preform or conductive epoxy. Mounting surface must be clean and flat.
Eutectic Die Attachment:
An 80/20, gold-tin, eutectic solder preform is recommended with a work surface temperature of 255oC and a
tool tip temperature of 265oC. When hot gas is applied, the tool tip temperature should be 290oC. The chip
should not be exposed to temperatures greater than 320oC for more than 20 seconds. No more than three
seconds should be required for attachment. Solders containing tin should not be used.
Epoxy Die Attachment:
A minimum amount of epoxy should be used. A thin epoxy fillet should be visible around the perimeter of the
chip after placement. Cure epoxy per manufacturer’s schedule (typically 125-150oC).
Outline Drawing7,8,9
7. Unless otherwise specified, all dimensions shown as µm, with tolerance ±5 µm.
8. Die thickness is 125 +10 µm.
9. Topside and backside metallization is gold, 2.5 µm thick typical.
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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