MASW4030G [TE]
GaAs SPDT Switch DC - 4 GHz; 砷化镓SPDT开关DC - 4 GHz的
| 型号： | MASW4030G |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs SPDT Switch DC - 4 GHz |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs SPDT Switch
DC - 4 GHz
MASW4030G
V 2.00
Features
●
Absorbtive or Reflective
●
Excellent Intermodulation Products
●
Excellent Temperature Stability
●
Fast Switching Speed, 3 ns Typical
●
Ultra Low DC Power Consumption
●
Independent Bias Control
Guaranteed Specifications*
Frequency Range
–55˚C to +85˚C
DC – 4.0 GHz
Insertion Loss
DC – 1.0 GHz
DC – 2.0 GHz
DC – 4.0 GHz
0.6 dB Max
0.8 dB Max
1.0 dB Max
Typical Performance @ +25°C***
Isolation
DC – 1.0 GHz
60 dB Min
50 dB Min
42 dB Min
40 dB Min
Absorbtive Mode DC – 2.0 GHz
Reflective Mode DC – 2.0 GHz
DC – 4.0 GHz
VSWR
DC – 1.0 GHz
DC – 2.0 GHz
DC – 4.0 GHz
1.2:1 Max
1.2:1 Max
1.5:1 Max
Operating Characteristics
Impedance
50 WNominal
Switching Characteristics
tRISE, tFALL (10/90% or 90/10% RF)
tON, tOFF (50% CTL to 90/10% RF)
Transients (In-Band)
3 ns Typ
6 ns Typ
20 mV Typ
Input Power for 1dB Compression**
Control Voltages (Vdc) 0/–5
0/–8
25 dBm Typ
33 dBm Typ
0.05 GHz
24 dBm
30 dBm
0.5 – 4.0 GHz
Intermodulation Intercept Point
(for two-tone input power up to +5 dBm)
Intercept Points
0.5 GHz
IP
IP
3
2
62
68
39 dBm Typ
46 dBm Typ
0.5 – 4.0 GHz
Control Voltages (Complementary Logic)
VINLow
VINHi
0 to –0.2 V @ 9 µA Max
–5 V @ 25 µA Typ to –8 V @ 0.75 µA Max
Die Size
0.043" x 0.041" x 0.010"
(1.08mm x 1.03mm x 0.25mm)
* Previously MA4GM202MTC
**All specifications apply with 50 Wimpedance connected to all RF
ports, and –5 Vdc control voltages.
***Loss changes 0.0025 dB/°C
V 2.00
Handling Precautions
Schematic
Permanent damage to the MASW4030G may occur if the fol-
lowing precautions are not adhered to:
A. Cleanliness — The MASW4030G should be handled in a
clean environment. DO NOT attempt to clean unit after
the MASW4030G is installed.
B. Static Sensitivity — All chip handling equipment and per-
sonnel should be DC grounded.
C. Transient — Avoid instrument and power supply tran-
sients while bias is applied to the MASW4030G. Use
shielded signal and bias cables to minimize inductive
pick-up.
D. Bias — Apply voltage to either of the complementary
control ports only when the other is grounded. No port
should be allowed to “float”.
E. General Handling — It is recommended that the
MASW4030G chip be handled along the long side of the
die with a sharp pair of bent tweezers. DO NOT touch
the surface of the chip with fingers or tweezers.
Wire Bonding
A. Ball or wedge with 1.0 mil diameter pure gold wire.
Thermosonic wirebonding with a nominal stage tempera-
ture of 150°C and a ball bonding force of 40 to 50 grams
or wedge bonding force of 18 to 22 grams is recommend-
ed. Ultrasonic energy and time should be adjusted to the
minimum levels achieve reliable wirebonds.
Mounting
The MASW4030G is back-metallized with
Pd/Ni/Au(100/1,000/10,000Å) metallization. It can be die-
mounted with AuSn eutectic preforms or with thermally con-
ductive epoxy. The package surface should be clean and flat
before attachment.
B. Wirebonds should be started on the chip and terminated
on the package. GND bonds should be as short as possi-
ble; at least three and no more than four bond wires from
ground pads to package are recommended.
Eutectic Die Attach:
A. A 80/20 gold/tin preform is recommended with a work
surface temperature of approximately 255°C and a tool
temperature of 265°C. When hot 90/10 nitrogen/hydrogen
gas is applied, tool tip temperature should be approxi-
mately 290°C.
Maximum Ratings
A. Control Value (A or B):
B. Max Input RF Power:
–8.5 Vdc
+34 dBm
(500 MHz–4 GHz)
B. DO NOT expose the MASW4030G to a temperature
greater than 320°C for more than 20 seconds. No
more than 3 seconds of scrubbing should be required
for attachment.
C. Storage Temperature:
–65°C to +175°C
+175°C
D. Max Operating Temperature:
Epoxy Die Attach:
A. Apply a minimum amount of epoxy and place the
MASW4030G into position. A thin epoxy fillet should be
visible around the perimeter of the chip.
BondPad Dimensions — Inches (mm)
RF1, RF2
RFA1, RFB1
RFA2, RFB2
A, B, A , B
0.005 x 0.008 (0.125 x 0.200)
0.008 x 0.004 (0.200 x 0.100)
0.004 x 0.004 (0.100 x 0.100)
0.008 x 0.004 (0.200 x 0.100)
B. Cure epoxy per manufacturer’s recommended schedule.
C. Electrically conductive epoxy may be used but is not
required.
c
c
TruthTable
Control Inputs
Condition of BondPad
Condition of Switch
A
B
T
G1
G2
—
RF1
On
RF2
Off
Absorbtive
SPDT
VINLOW
VINHI
VINHI
VINLOW
VINHI
GND
GND
—
GND
GND
GND
—
Off
On
Reflective
VINLOW
GND
On
Off
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