MRF422 [TE]
The RF Line NPN Silicon RF Power Transistor; 射频线NPN硅射频功率晶体管
| 型号： | MRF422 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | The RF Line NPN Silicon RF Power Transistor |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF422/D
The RF Line
NP N S ilic on
M
R
F
4
2
2
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
Designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz.
•
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 10 dB
150 W (PEP), 30 MHz
RF POWER
Efficiency = 40%
TRANSISTORS
NPN SILICON
•
•
Intermodulation Distortion @ 150 W (PEP) —
IMD = –30 dB (Min)
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
V
CEO
V
CBO
V
EBO
85
Emitter–Base Voltage
3.0
20
Collector Current — Continuous
Withstanding Current — 10 s
I
C
—
30
Total Device Dissipation @ T = 25°C
P
D
290
Watts
C
Derate above 25°C
1.66
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
0.6
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 200 mAdc, I = 0)
V
(BR)CEO
35
85
85
3.0
—
—
—
—
—
—
—
—
—
—
20
Vdc
Vdc
C
B
Collector–Emitter Breakdown Voltage (I = 100 mAdc, V = 0)
V
C
BE
(BR)CES
(BR)CBO
(BR)EBO
Collector–Base Breakdown Voltage (I = 100 mAdc, I = 0)
V
V
Vdc
C
E
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)
Vdc
E
C
Collector Cutoff Current (V = 28 Vdc, V = 0, T = 25°C)
I
CES
mAdc
(continued)
CE
BE
C
REV 6
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 5.0 Adc, V = 5.0 Vdc)
h
FE
15
30
120
—
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
420
—
pF
ob
(V = 28 Vdc, I = 0, f = 1.0 MHz)
CB
E
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
G
10
—
13
45
—
—
dB
%
PE
(V = 28 Vdc, P = 150 W (PEP), I
= 6.7 Adc,
= 6.7 Adc,
CC
out
C(max)
C(max)
I
= 150 mAdc, f = 30, 30.001 MHz)
CQ
Collector Efficiency
(V = 28 Vdc, P = 150 W (PEP), I
η
CC
out
I
= 150 mAdc, f = 30, 30.001 MHz)
CQ
Intermodulation Distortion (1)
(V = 28 Vdc, P = 150 W (PEP), I = 6.7 Adc,
IMD
—
–33
—
–30
—
dB
CE
out
C
I
= 150 mAdc, f = 30, 30.001 MHz)
CQ
Output Power
(V = 28 Vdc, f = 30 MHz)
P
out
150
Watts
(PEP)
CE
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R 1
+
+
L
5
B
I
A
S
C
R
1
2
8
V
d
c
C
6
C
7
C
8
C9
C1 0
C
1
1
L 2
L
3
-
L 4
C
4
-
C
2
L
1
D
.
U
.
T
.
C3
C
5
R2
C1
C1, C2, C3, C5 — 170ā –ā 680 pF, ARCO 469
C4 — 80ā –ā 480 pF, ARCO 466
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10 µH Molded Choke
C6, C8, C11 — ERIE 0.1 µF, 100 V
C7 — MALLORY 500 µF, 15 V Electrolytic
C9 — UNDERWOOD 1000 pF, 350 V
C10 — 10 µF, 50 V Electrolytic
R1 — 10 Ω, 25 Watt Wire Wound
R2 — 10 Ω, 1.0 Watt Carbon
L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia.
L4 — 5 Turns, 1/8″ Copper Tubing
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
CR1 — 1N4997
Figure 1. 30 MHz Test Circuit Schematic
REV 6
2
2 80
2 40
2 00
1 60
1 20
8 0
2 5
2 0
1 5
1 0
5
V
=
28
1 50 m A
T WO TO NE TE ST:
3 0, 30 .0 01 M Hz
V
C
C
I
C
=
Q
f
=
V
=
2 8
1 50 mA
1 50
V
C
C
I
C
=
Q
P
ou t
=
W
P E P
5
4 0
0
0
0
1 6
1
2
4
6
8
10
12
14
1 . 5
2
3
7
1 0
1 5
2 0
3 0
P , I NP UT P OWE R ( WATT S PE P )
in
f , FRE Q UE NCY (M Hz)
Figure 2. Output Power versus Input Power
Figure 3. Power Gain versus Frequency
2 80
2 40
2 00
1 60
1 20
8 0
- 1 0
IM D
=
30 dB
25 m A
3 0, 30 .0 01 M Hz
V
=
2 8
1 50 mA
3 0, 3 0. 0 01 MH z
V
C
C
I
f
=
I
f
=
C
Q
C
Q
=
=
- ā2 0
- ā3 0
3 RD O RDE R
5 TH O RDE R
- ā4 0
- ā5 0
4
0
0
20
2
4
28
3 2
0
4 0
8 0
1
2
0
1 6 0
2 0 0
V
C
,
C
S UPP LY V OLTA GE ( VO LT S)
P ,
ou t
O UTP UT P O WE R (WATTS P EP )
Figure 4. Linear Output Power versus
Supply Voltage
Figure 5. Intermodulation Distortion
versus Output Power
4 0
2 0
T
= °C25
C
3 0
8
4
2
Ă V
C
Ă = 2 8
Ă = 1 50 mA
1 50 PE P
V
C
1 5
Ă I
C
Q
P
ou t
=
W
7
FRE Q UE NC Y
MH z
Z
i n
O h ms
2
7
4 .9 0
2 .1 0
-
-
-
-
j
1
.
5
4
0 .8
0 .4
j0 .9 3
j0 .3 8
j0 .2 6
1 5
3 0
1 .3 2
0 .8 1
f
=
2
MH z
2
5
1
0
2
0
5
0
1
0
0
V
C
,
E
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 6. DC Safe Operating Area
Figure 7. Series Input Impedance
REV 6
3
5
4
3
2
1 0
8
6
4
V
=
28 V
15 0 m A
V
C C
=
2 8 V
1 50 mA
C
C
1
0
2
I
C
=
I
C Q
=
Q
P
o
=
15 0
3
W
P EP
5
P
ou t
=
1 50
3
W
P E P
5
u
t
0
1 .5
1 .5
2
7
10
15
2
0
3
0
2
7
1 0
1 5
2 0
3 0
f , FR EQ UE NC Y ( M Hz)
f , FRE Q UE NCY (M Hz)
Figure 8. Output Resistance versus Frequency
Figure 9. Output Capacitance versus Frequency
PACKAGE DIMENSIONS
A
U
N O TE S :
1. D I MEN S I ON I N G A N D TO LE R AN C I N G P ER AN S I
Y 14. 5M, 198 2.
M
2
.
C
O
N
T
R
O
L
L
I
N
G
D
I
M
E
N
S
I
O
N
:
I
N
C
H
.
1
INCHES
DIM MIN MAX
MILLIMETERS
M
Q
MIN
24. 39
11. 82
5. 82
5. 49
2. 14
3. 66
0. 08
11. 05
MAX
25. 14
12. 95
6. 98
5. 96
2. 79
4. 52
0. 17
---
4
A
B
C
D
E
H
J
0. 960
0. 465
0. 229
0. 216
0. 084
0. 144
0. 003
0. 435
0. 990
0. 510
0. 275
0. 235
0. 110
0. 178
0. 007
---
R
B
2
3
K
M
Q
R
U
D
45ꢀ ꢀ ꢀN O M
45ꢀ ꢀ ꢀN O M
_
_
K
0. 115
0. 246
0. 720
0. 130
0. 255
0. 730
2. 93
6. 25
3. 30
6. 47
18. 29
18. 54
J
S TY LE 1:
P IN 1. E MIT T ER
2. B AS E
3. E MIT T ER
C
H
E
SEATING
PLANE
4
.
C
O
L
L
E
C
T
O
R
CASE 211–11
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 6
4
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