GB506P [THINKISEMI]
50 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators;型号: | GB506P |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | 50 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators |
文件: | 总3页 (文件大小:1288K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GB502N thru GB506N
GB502N/GB503N/GB504N/GB505N/GB506N
Pb Free Plating Product
50 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators
BLOCK/TO-230/BA/MR/K series
Feature:
ꢀ Low leakage
ꢀ Low forward voltage drop
ꢀ High current capability
ꢀ High forward surge current capability
Application:
Block Diode/Alternator Diode with AEC-Q101 Grade Quality
ꢀ
ꢀ
Stack Silicon Diffused Diode alternative
Special for Automotive AC Alternator rectifier application
ꢀ
Mechanical Data:
ꢀ Technology: Latest Glass Passivation Pellet/Cu Clip Bonding
ꢀ Case: Vacuum soldered/sintered temperature < 260
ꢀ Cathode Polarity: As marked on body
ꢀ Lead: Plated lead, solderable per MIL-STD-202E method 208C
ꢀ Mounting: BLOCK/TO-230/BA/MR/K series package type
℃
GB502P
GB503P
GB504P
GB505P
GB506P
Positive
Suffix:"P"
GB502N
GB503N
GB504N
GB505N
GB506N
Negative
Suffix:"N"
Case
Lead
Case
Lead
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
·
·
·
Ratings at 25℃ ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
SYMBOLS
UNIT
Volts
Volts
Volts
GB502N GB503N GB504N GB505N GB506N
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
At TC = 105℃
50
Io
Amps
Peak Forward Surge Current
8.3mS single half sine wave superimposed on
rated load (JEDEC method)
600
IFSM
Amps
I2t
1494
1.08
A2S
Rating for fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage Drop at 100A
VF
Volts
Maximum DC Reverse Current at Rated TA=25℃
5.0
IR
µA
DC Blocking Voltage
TA=100℃
450
Typical Thermal Resistance
℃/W
RθJL
1.0
Operating and Storage Temperature Rang
℃
TJ, TSTG
(-65 to +175)
NOTES:
1.Enough heatsink must be considered in application.
Page 1/3
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
GB502N thru GB506N
GB502N thru GB506N
RATINGS AND CHARACTERISTIC CURVES
FIG .1 TYPICAL FORWARD CURRENT
DERATING GURVE
FIG .2 MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms Single Half Sine-Wave
(JEDEC Method) Tj=Tj max
600
50
Single Phase
Half Wave 60Hz
Resistive or Inductive Load
0.375″(9.5mm) Lead Length
0
1 Cycle
2
0
25
50
75
100
125
150
175
1
4
6
8
10
20
40 60 80 100
AMBIENT TEMPERATURE, (℃)
NUMBER OF CYCLES AT 60 Hz
FIG .3 TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG .4 FORWARD ROWER DISSIPATION
1000
60
40
20
0
100
SQUARE WAVE
DC
10
T1=25℃
PULSE WIDTH=300μS
1%DUTY CYCLE
0
10
20
30
40
50
1.0
AVERAGE FORWARD CURRENT, (A)
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,(V)
Page 2/3
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
GB502N thru GB506N
BLOCK/TO-230/BA/MR/K Series Package Outline
A3
A2
A1
D3
E
F
G
DIM MILLIMETERS DIM MILLIMETERS
_
_
+
5.0 0.3
+
A1
A2
A3
B1
B2
C1
C2
D1
10.0 0.3
D2
D3
E
F
G
_
_
+
+
13.5 0.3
4.5 0.3
_
_
+
+
24.0 0.5
1.9 0.3
_
_
+
+
8.5 0.3
9.0 0.3
_
_
+
+
10.0 0.3
1.0 0.3
_
_
+
+
2.0 0.3
H
T
4.4 0.5
_
_
+
+
5.0 0.3
0.6 0.3
_
+
2.5 0.3
Page 3/3
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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