BQ2002CSNG4 [TI]
NiCd/NiMH Charge Controller with Negative dV and Peak Voltage Detection Termination 8-SOIC 0 to 70;型号: | BQ2002CSNG4 |
厂家: | TEXAS INSTRUMENTS |
描述: | NiCd/NiMH Charge Controller with Negative dV and Peak Voltage Detection Termination 8-SOIC 0 to 70 光电二极管 |
文件: | 总17页 (文件大小:388K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
bq2002C
NiCd/NiMH Fast-Charge Management IC
Features
General Description
Fast charge is terminated by any of
the following:
➤
Fast charge of nickel cadmium
or nickel-metal hydride batter-
The bq2002C Fast-Charge IC is a low-
cost CMOS battery-charge controller
providing reliable charge termination
for both NiCd and NiMH battery appli-
cations. Controlling a current-limited
or constant-current supply allows the
bq2002C to be the basis for a cost-
effective stand-alone or system-inte-
grated charger. The bq2002C inte-
grates fast charge with pulsed-trickle
control in a single IC for charging one
or more NiCd or NiMH battery cells.
n
n
n
n
n
Peak voltage detection (PVD)
Negative delta voltage (-∆V)
Maximum voltage
ies
➤
➤
Dir ect LE D ou t pu t displa ys
charge status
Maximum temperature
Maximum time
Fast-charge termination by -∆V,
m a xim u m volt a ge, m a xim u m
t em per a t u r e, a n d m a xim u m
time
After fast charge, the bq2002C pulse-
t r ickles t h e ba t t er y per t h e pr e-
configured limits. Fast charge may be
inhibited using the INH pin. The
bq2002C may also be placed in low-
s t a n d by-p ower m od e t o r ed u ce
system power consumption.
➤
➤
Internal band-gap voltage ref-
erence
Fast charge is initiated on application
of the charging supply or battery
replacement. For safety, fast charge is
inhibited if the battery temperature
and voltage are outside configured
limits.
Selectable pulse-trickle charge
rates
➤
➤
Low-power mode
8-pin 300-mil DIP or 150-mil
SOIC
Pin Connections
Pin Names
TS
Temperature sense input
Supply voltage input
Charge inhibit input
Charge control output
TM
Timer mode select input
Charging status output
Battery voltage input
System ground
VCC
INH
CC
LED
BAT
VSS
TM
LED
BAT
1
2
3
4
8
7
6
5
CC
INH
V
CC
V
SS
TS
8-Pin DIP or
Narrow SOIC
PN-200201.eps
SLUS136 - AUGUST 2011
1
bq2002C
Ch ar ge con tr ol ou tpu t
CC
Pin Descriptions
An open-drain output used to control the
charging current to the battery. CC switch-
ing to high impedance (Z) enables charging
current to flow, and low to inhibit charging
current. CC is modulated to provide pulse
trickle.
Timer mode input
TM
A three-level input that controls the settings
for the fast charge safety timer, voltage ter-
mination mode, pulse-trickle, and voltage
hold-off time.
Ch ar gin g ou tpu t statu s
LED
BAT
Functional Description
Open-drain output that indicates the charging
status.
Figure 2 shows a state diagram and Figure 3 shows a
block diagram of the bq2002C.
Batter y in pu t voltage
Battery Voltage and Temperature
Measurements
The battery voltage sense input. The input to
this pin is created by a high-impedance re-
sistor divider network connected between
the positive and negative terminals of the
battery.
Battery voltage and temperature are monitored for
maximum allowable values. The voltage presented on
t h e ba t t er y sen se in pu t , BAT, sh ou ld r epr esen t a
single-cell potential for the battery under charge.
resistor-divider ratio of
A
System gr ou n d
VSS
TS
RB1
Tem per atu r e sen se in pu t
= N - 1
RB2
Input for an external battery temperature
monitoring thermistor.
is recommended to maintain the battery voltage within
the valid range, where N is the number of cells, RB1 is
the resistor connected to the positive battery terminal,
a n d RB2 is t h e r esist or con n ect ed t o t h e n ega t ive
battery terminal. See Figure 1.
Su pply voltage in pu t
5.0V ±20% power input.
Ch ar ge in h ibit in pu t
VCC
INH
Note: This resistor-divider network input impedance to
end-to-end should be at least 200kΩ and less than 1 MΩ.
When high, INH suspends the fast charge in
progress. When returned low, the IC re-
sumes operation at the point where initially
suspended.
A ground-referenced negative temperature coefficient
thermistor placed near the battery may be used as a low-
cost temperature-to-voltage transducer. The temperature
sense voltage input at TS is developed using a resistor-
thermistor network between VCC and VSS. See Figure 1.
V
CC
PACK +
RT
V
RB1
RB2
R3
R4
CC
BAT
TM
T
S
N
T
bq2002C
bq2002C
C
V
SS
V
SS
BAT pin connection
Mid-level
setting for TM
NTC = negative temperature coefficient thermistor.
Thermistor connection
Fg2002/C.eps
Figure 1. Voltage and Temperature Monitoring and TM Pin Configuration
2
bq2002C
Chip on
4.0V
Battery Voltage
too High?
V
CC
V
>
2V
BAT
V
< 2V
BAT
Battery Voltage
too Low?
V
< 0.84V
BAT
0.84V < V
BAT
V
< V /2
CC
V
> V /2
CC
TS
TS
Battery
Temperature?
Charge
Pending
Fast
LED =
Low
Trickle
LED =
Flash
V
V
V
> 0.84V and
< 2V and
> V /2
CC
BAT
BAT
TS
V
> 2V
BAT
V
V
> 2V or
BAT
< V /2 or
TS
CC
PVD or - V or
V
2V
BAT
Maximum Time Out
Trickle
LED = Z
SD2002C.eps
Figure 2. State Diagram
Clock
Phase
Generator
OSC
TM
Sample
History
Timing
Control
Voltage
Reference
INH
PVD, - V
ALU
A to D
Converter
Charge-Control
State Machine
LBAT
Check
MCV
Check
BAT
HTF TCO
Check Check
Power-On
Reset
Power
Down
CC
LED
V
TS
V
CC
SS
Bd2002CEG.eps
Figure 3. Block Diagram
3
bq2002C
V
= 0
Fast Charging
Pulse-Trickle
1s
Fast Charging
CC
CC Output
See
Table1
Charge initiated by application of power
Charge initiated by battery replacement
LED
TD2002C1.eps
Figure 4. Charge Cycle Phases
pending state. In this state pulse trickle charge is
applied to the battery and the LED flashes until the
voltage and temperature come into the allowed fast
Starting A Charge Cycle
charge range or VBAT rises above VMCV
. Anytime VBAT
Either of two events starts a charge cycle (see Figure 4):
1. Application of power to VCC or
≥ VMCV, the IC enters the Charge Complete/Battery
Absent state. In this state the LED is off and trickle
charge is applied to the battery until the next new
charge cycle begins.
2. Voltage at the BAT pin falling through the maximum
cell voltage VMCV where
Fast charge continues until termination by one or more of
the five possible termination conditions:
VMCV = 2V ±5%.
If the battery is within the configured temperature and
voltage limits, the IC begins fast charge. The valid
battery voltage range is VLBAT < VBAT < VMCV, where
n
n
n
n
n
Peak voltage detection (PVD)
Negative delta voltage (-∆V)
Maximum voltage
VLBAT = 0.175 VCC ±20%
The valid temperature range is VTS > VHTF where
VHTF = 0.6 VCC ±5%.
Maximum temperature
Maximum time
If VBAT ≤ VLBAT or VTS ≤ VHTF, the IC enters the charge-
Table 1. Fast-Charge Safety Time/Hold-Off Table
Typical
Fast-
Charge
Time Limits
(minutes)
Maximum
Synchronized
Sampling
Period
Typical PVD
and -∆V
Hold-Off
Pulse-
Trickle
Pulse Width
(ms)
Corresponding
Fast-Charge
Rate
Pulse-
Trickle
Rate
TM
Mid
Low
High
Termination
PVD
Time (seconds)
(seconds)
C/2
1C
2C
160
80
300
150
75
C/32
C/32
C/32
73
37
18
18.7
18.7
9.4
PVD
-∆V
40
Notes:
Typical conditions = 25°C, VCC = 5.0V
Mid = 0.5 CC ±0.5V
Tolerance on all timing is ±12%.
V
*
4
bq2002C
_______________________________________________________________________
PVD and -∆V Termination
There are two modes for voltage termination, depending on
the state of TM. For -∆V (TM = high), if VBAT is lower than any
previously measured value by 12mV ±3mV, fast charge is
terminated. For PVD (TM = low or mid), a decrease of 2.5mV
±2.5mV terminates fast charge. The PVD and -∆V tests are
valid in the range 1V<VBAT <2V.
Maximum charge time is configured using the TM pin. Time
settings are available for corresponding charge rates of C/2,
1C, and 2C. Maximum time-out termination is enforced on the
fast-charge phase. There is no time limit on the trickle-charge
phase.
Pulse-Trickle Charge
Synchronized Voltage Sampling
Pulse-trickle is used to compensate for self-discharge while
the battery is idle in the charger. The battery is pulse-trickle
charged by driving the CC pin active once per second for the
period specified in Table 1. This results in a trickle rate of
C/32.
Voltage sampling at the BAT pin for PVD and -∆V termination
may be synchronized to an external stimulus using the INH
input. Low-high-low input pulses between 100ns and 3.5ms in
width must be applied at the INH pin with a frequency
greater than the “maximum synchronized sampling period”
set by the state of the TM pin as shown in Table 1. Voltage is
sampled on the falling edge of such pulses. If the time between
pulses is greater than the synchronizing period, voltage
sampling “free-runs” at once every 17 seconds. A sample is
taken by averaging together voltage measurements taken
57µs apart. The IC takes 32 measurements in PVD mode and
16 measurements in -∆V mode. The resulting sample periods
(9.17 and 18.18ms, respectively) filter out harmonics centered
around 55 and 109Hz. This technique minimizes the effect of
any AC line ripple that may feed through the power supply
from either 50 or 60Hz AC sources. If the INH input remains
high for more than 12ms, the voltage sample history kept by
the IC and used for PVD and -∆V termination decisions is
erased and a new history is started. Such a reset is required
when transitioning from free-running to synchronized voltage
sampling. The response of the IC to pulses less than 100ns in
width or between 3.5ms and 12ms is indeterminate. The
tolerance on all timing is ±12%.
TM Pin
The TM pin is a three-level pin used to select the charge
timer, voltage termination mode, trickle rate, and voltage
hold-off period options. Table 1 describes the states selected
by the TM pin. The mid-level selection input is developed by a
resistor divider between VCC and ground that fixes the voltage
on TM at VCC/2 ± 0.5V. See Figure 4.
Charge Status Indication
A fast charge in progress is uniquely indicated when the LED
pin goes low. In the charge pending state, the LED pin is
driven low for 500ms, then to high-Z for 500ms. The LED pin
is driven to the high-Z state for all other conditions. Figure 2
outlines the state of the LED pin during charge.
Charge Inhibit
Fast charge may be inhibited by using the INH pin. When
high, INH suspends all fast charge activity and the internal
charge timer. INH freezes the current state of LED until
inhibit is removed. Temperature monitoring is not affected by
the INH pin. During charge inhibit, the bq2002C continues to
pulse-trickle charge the battery per the TM selection. When
INH returns low, charge control and the charge timer resume
from the point where INH became active.
Voltage Termination Hold-off
A hold-off period occurs at the start of fast charging. During
the hold-off time, the PVD and -∆V terminations are disabled.
This avoids premature termination on the voltage spikes
sometimes produced by older batteries when fast-charge
current is first applied. Maximum voltage and temperature
terminations are not affected by the hold-off period.
Low-Power Mode
Maximum Voltage, Temperature, and Time
The IC enters a low-power state when VBAT is driven above
the power-down threshold (VPD) where:
Any time the voltage on the BAT pin exceeds the maximum
cell voltage, VMCV, fast charge is terminated.
VPD = VCC - (1V ±0.5V)
Maximum temperature termination occurs anytime the
voltage on the TS pin falls below the temperature cut-off
threshold VTCO, where
Both the CC pin and the LED are driven to the high-Z state.
The operating current is reduced to less than 1µA in this
mode. When VBAT returns to a value below VPD, the IC pulse-
trickle charges until the next new charge cycle begins.
VTCO = 0.5 x VCC ± 5%.
5
bq2002C
5
bq2002C
Absolute Maximum Ratings
Symbol
VCC
Parameter
VCC relative to VSS
Minimum
-0.3
Maximum
+7.0
Unit
V
Notes
VT
DC voltage applied on any pin
excluding VCC relative to VSS
-0.3
+7.0
V
TOPR
Operating ambient temperature
Storage temperature
0
-40
-
+70
+85
°C
°C
°C
°C
Commercial
TSTG
TSOLDER
TBIAS
Soldering temperature
+260
+85
10 sec max.
Temperature under bias
-40
Note:
Permanent device damage may occur if Absolu te Ma xim u m Ra tin gs are exceeded. Functional opera-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Thresholds (T = 0 to 70°C; V
±20%)
CC
A
Symbol
Parameter
Rating
Tolerance
Unit
Notes
VTCO
Temperature cutoff
0.5 VCC
*
V
±5%
VTS ≤ VTCO inhibits/terminates
fast charge
VHTF
High-temperature fault
Maximum cell voltage
Minimum cell voltage
V
V
0.6 VCC
±5%
±5%
VTS ≤ VHTF inhibits fast charge
start
VMCV
2
VBAT ≥ VMCV inhibits/terminates
fast charge
VLBAT
V
0.175 VCC
-12
±20%
±3
VBAT ≤ VLBAT inhibits fast charge
BAT input change for
mV
-∆V
-∆V detection
PVD
BAT input change for
PVD detection
-2.5
mV
±2.5
6
bq2002C
Recommended DC Operating Conditions (T = 0 to 70°C)
A
Symbol
VCC
Condition
Supply voltage
Minimum
Typical
Maximum
Unit
V
Notes
4.0
5.0
6.0
2
VDET
VBAT
VTS
-∆V, PVD detect voltage
Battery input
1
0
-
-
-
-
-
-
V
VCC
VCC
-
V
Thermistor input
Logic input high
Logic input high
Logic input mid
0.5
V
VTS < 0.5V prohibited
VIH
0.5
V
INH
TM
TM
VCC - 0.5
-
V
VCC
VCC
VIM
V
- 0.5
+ 0.5
2
2
VIL
Logic input low
Logic input low
Logic output low
Power down
-
-
-
-
-
0.1
V
V
V
V
INH
-
0.5
TM
VOL
VPD
-
0.8
LED, CC, IOL = 10mA
VCC - 1.5
VCC - 0.5
VBAT ≥ VPD max. powers
down bq2002C;
VBAT < VPD min. =
normal operation.
ICC
Supply current
-
-
500
µA
µA
Outputs unloaded,
VCC = 5.1V
ISB
IOL
IL
Standby current
LED, CC sink
Input leakage
-
10
-
-
-
-
-
1
-
VCC = 5.1V, VBAT = VPD
mA @VOL = VSS + 0.8V
±1
-
µA
µA
INH, CC, V = VSS to VCC
LED, CC
IOZ
Output leakage in
high-Z state
-5
Note:
All voltages relative to VSS.
7
bq2002C
Impedance
Symbol
Parameter
Minimum
Typical
Maximum
Unit
MΩ
MΩ
RBAT
RTS
Battery input impedance
TS input impedance
50
50
-
-
-
-
Timing (T = 0 to +70°C; V
±10%)
CC
A
Symbol
dFCV
Parameter
Minimum Typical Maximum
-12 12
Unit
Notes
Time base variation
-
%
Note:
Typical is at TA = 25°C, VCC = 5.0V.
8
bq2002C
(
)
8-Pin DIP PN
(
)
8-Pin PN 0.300" DIP
Inches
Millimeters
D
Min.
0.160
0.015
0.015
0.055
0.008
0.350
0.300
0.230
0.300
0.090
0.115
0.020
Max.
0.180
0.040
0.022
0.065
0.013
0.380
0.325
0.280
0.370
0.110
0.150
0.040
Min.
4.06
0.38
0.38
1.40
0.20
8.89
7.62
5.84
7.62
2.29
2.92
0.51
Max.
4.57
1.02
0.56
1.65
0.33
9.65
8.26
7.11
9.40
2.79
3.81
1.02
Dimension
A
A1
B
E1
E
B1
C
A
B1
A1
D
E
L
C
E1
e
B
S
G
L
e
G
S
9
bq2002C
8-Pin SOIC Narrow (SN)
(
)
8-Pin SN 0.150" SOIC
Inches
Millimeters
Min.
Min.
0.060
0.004
0.013
0.007
0.185
0.150
0.045
0.225
0.015
Max.
0.070
0.010
0.020
0.010
0.200
0.160
0.055
0.245
0.035
Max.
1.78
0.25
0.51
0.25
5.08
4.06
1.40
6.22
0.89
Dimension
A
1.52
0.10
0.33
0.18
4.70
3.81
1.14
5.72
0.38
A1
B
C
D
E
e
H
L
10
bq2002C
____________________________________________________________________________
Data Sheet Revision History
Change No.
Page No.
Description
Revised format and outline of this data sheet
Removed "top-off"
1
2
All
5
Note: Change 1 = Sept. 1997 B changes from Dec. 1995.
Note: Change 2 = July 2011
Ordering Information
11
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2011
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
BQ2002CPN
BQ2002CPNE4
BQ2002CSN
ACTIVE
ACTIVE
ACTIVE
PDIP
PDIP
SOIC
P
P
D
8
8
8
50
50
75
Pb-Free (RoHS)
Pb-Free (RoHS)
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
CU NIPDAU Level-1-260C-UNLIM
Green (RoHS
& no Sb/Br)
BQ2002CSNG4
BQ2002CSNTR
BQ2002CSNTRG4
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
D
D
D
8
8
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
2500
2500
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2011
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Jul-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ2002CSNTR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Jul-2011
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOIC
SPQ
Length (mm) Width (mm) Height (mm)
340.5 338.1 20.6
BQ2002CSNTR
D
8
2500
Pack Materials-Page 2
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