BQ2002CSNG4 [TI]

NiCd/NiMH Charge Controller with Negative dV and Peak Voltage Detection Termination 8-SOIC 0 to 70;
BQ2002CSNG4
型号: BQ2002CSNG4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

NiCd/NiMH Charge Controller with Negative dV and Peak Voltage Detection Termination 8-SOIC 0 to 70

光电二极管
文件: 总17页 (文件大小:388K)
中文:  中文翻译
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bq2002C  
NiCd/NiMH Fast-Charge Management IC  
Features  
General Description  
Fast charge is terminated by any of  
the following:  
Fast charge of nickel cadmium  
or nickel-metal hydride batter-  
The bq2002C Fast-Charge IC is a low-  
cost CMOS battery-charge controller  
providing reliable charge termination  
for both NiCd and NiMH battery appli-  
cations. Controlling a current-limited  
or constant-current supply allows the  
bq2002C to be the basis for a cost-  
effective stand-alone or system-inte-  
grated charger. The bq2002C inte-  
grates fast charge with pulsed-trickle  
control in a single IC for charging one  
or more NiCd or NiMH battery cells.  
n
n
n
n
n
Peak voltage detection (PVD)  
Negative delta voltage (-V)  
Maximum voltage  
ies  
Dir ect LE D ou t pu t displa ys  
charge status  
Maximum temperature  
Maximum time  
Fast-charge termination by -V,  
m a xim u m volt a ge, m a xim u m  
t em per a t u r e, a n d m a xim u m  
time  
After fast charge, the bq2002C pulse-  
t r ickles t h e ba t t er y per t h e pr e-  
configured limits. Fast charge may be  
inhibited using the INH pin. The  
bq2002C may also be placed in low-  
s t a n d by-p ower m od e t o r ed u ce  
system power consumption.  
Internal band-gap voltage ref-  
erence  
Fast charge is initiated on application  
of the charging supply or battery  
replacement. For safety, fast charge is  
inhibited if the battery temperature  
and voltage are outside configured  
limits.  
Selectable pulse-trickle charge  
rates  
Low-power mode  
8-pin 300-mil DIP or 150-mil  
SOIC  
Pin Connections  
Pin Names  
TS  
Temperature sense input  
Supply voltage input  
Charge inhibit input  
Charge control output  
TM  
Timer mode select input  
Charging status output  
Battery voltage input  
System ground  
VCC  
INH  
CC  
LED  
BAT  
VSS  
TM  
LED  
BAT  
1
2
3
4
8
7
6
5
CC  
INH  
V
CC  
V
SS  
TS  
8-Pin DIP or  
Narrow SOIC  
PN-200201.eps  
SLUS136 - AUGUST 2011  
1
bq2002C  
Ch ar ge con tr ol ou tpu t  
CC  
Pin Descriptions  
An open-drain output used to control the  
charging current to the battery. CC switch-  
ing to high impedance (Z) enables charging  
current to flow, and low to inhibit charging  
current. CC is modulated to provide pulse  
trickle.  
Timer mode input  
TM  
A three-level input that controls the settings  
for the fast charge safety timer, voltage ter-  
mination mode, pulse-trickle, and voltage  
hold-off time.  
Ch ar gin g ou tpu t statu s  
LED  
BAT  
Functional Description  
Open-drain output that indicates the charging  
status.  
Figure 2 shows a state diagram and Figure 3 shows a  
block diagram of the bq2002C.  
Batter y in pu t voltage  
Battery Voltage and Temperature  
Measurements  
The battery voltage sense input. The input to  
this pin is created by a high-impedance re-  
sistor divider network connected between  
the positive and negative terminals of the  
battery.  
Battery voltage and temperature are monitored for  
maximum allowable values. The voltage presented on  
t h e ba t t er y sen se in pu t , BAT, sh ou ld r epr esen t a  
single-cell potential for the battery under charge.  
resistor-divider ratio of  
A
System gr ou n d  
VSS  
TS  
RB1  
Tem per atu r e sen se in pu t  
= N - 1  
RB2  
Input for an external battery temperature  
monitoring thermistor.  
is recommended to maintain the battery voltage within  
the valid range, where N is the number of cells, RB1 is  
the resistor connected to the positive battery terminal,  
a n d RB2 is t h e r esist or con n ect ed t o t h e n ega t ive  
battery terminal. See Figure 1.  
Su pply voltage in pu t  
5.0V ±20% power input.  
Ch ar ge in h ibit in pu t  
VCC  
INH  
Note: This resistor-divider network input impedance to  
end-to-end should be at least 200kand less than 1 M.  
When high, INH suspends the fast charge in  
progress. When returned low, the IC re-  
sumes operation at the point where initially  
suspended.  
A ground-referenced negative temperature coefficient  
thermistor placed near the battery may be used as a low-  
cost temperature-to-voltage transducer. The temperature  
sense voltage input at TS is developed using a resistor-  
thermistor network between VCC and VSS. See Figure 1.  
V
CC  
PACK +  
RT  
V
RB1  
RB2  
R3  
R4  
CC  
BAT  
TM  
T
S
N
T
bq2002C  
bq2002C  
C
V
SS  
V
SS  
BAT pin connection  
Mid-level  
setting for TM  
NTC = negative temperature coefficient thermistor.  
Thermistor connection  
Fg2002/C.eps  
Figure 1. Voltage and Temperature Monitoring and TM Pin Configuration  
2
bq2002C  
Chip on  
4.0V  
Battery Voltage  
too High?  
V
CC  
V
>
2V  
BAT  
V
< 2V  
BAT  
Battery Voltage  
too Low?  
V
< 0.84V  
BAT  
0.84V < V  
BAT  
V
< V /2  
CC  
V
> V /2  
CC  
TS  
TS  
Battery  
Temperature?  
Charge  
Pending  
Fast  
LED =  
Low  
Trickle  
LED =  
Flash  
V
V
V
> 0.84V and  
< 2V and  
> V /2  
CC  
BAT  
BAT  
TS  
V
> 2V  
BAT  
V
V
> 2V or  
BAT  
< V /2 or  
TS  
CC  
PVD or - V or  
V
2V  
BAT  
Maximum Time Out  
Trickle  
LED = Z  
SD2002C.eps  
Figure 2. State Diagram  
Clock  
Phase  
Generator  
OSC  
TM  
Sample  
History  
Timing  
Control  
Voltage  
Reference  
INH  
PVD, - V  
ALU  
A to D  
Converter  
Charge-Control  
State Machine  
LBAT  
Check  
MCV  
Check  
BAT  
HTF TCO  
Check Check  
Power-On  
Reset  
Power  
Down  
CC  
LED  
V
TS  
V
CC  
SS  
Bd2002CEG.eps  
Figure 3. Block Diagram  
3
bq2002C  
V
= 0  
Fast Charging  
Pulse-Trickle  
1s  
Fast Charging  
CC  
CC Output  
See  
Table1  
Charge initiated by application of power  
Charge initiated by battery replacement  
LED  
TD2002C1.eps  
Figure 4. Charge Cycle Phases  
pending state. In this state pulse trickle charge is  
applied to the battery and the LED flashes until the  
voltage and temperature come into the allowed fast  
Starting A Charge Cycle  
charge range or VBAT rises above VMCV  
. Anytime VBAT  
Either of two events starts a charge cycle (see Figure 4):  
1. Application of power to VCC or  
VMCV, the IC enters the Charge Complete/Battery  
Absent state. In this state the LED is off and trickle  
charge is applied to the battery until the next new  
charge cycle begins.  
2. Voltage at the BAT pin falling through the maximum  
cell voltage VMCV where  
Fast charge continues until termination by one or more of  
the five possible termination conditions:  
VMCV = 2V ±5%.  
If the battery is within the configured temperature and  
voltage limits, the IC begins fast charge. The valid  
battery voltage range is VLBAT < VBAT < VMCV, where  
n
n
n
n
n
Peak voltage detection (PVD)  
Negative delta voltage (-V)  
Maximum voltage  
VLBAT = 0.175 VCC ±20%  
The valid temperature range is VTS > VHTF where  
VHTF = 0.6 VCC ±5%.  
Maximum temperature  
Maximum time  
If VBAT VLBAT or VTS VHTF, the IC enters the charge-  
Table 1. Fast-Charge Safety Time/Hold-Off Table  
Typical  
Fast-  
Charge  
Time Limits  
(minutes)  
Maximum  
Synchronized  
Sampling  
Period  
Typical PVD  
and -V  
Hold-Off  
Pulse-  
Trickle  
Pulse Width  
(ms)  
Corresponding  
Fast-Charge  
Rate  
Pulse-  
Trickle  
Rate  
TM  
Mid  
Low  
High  
Termination  
PVD  
Time (seconds)  
(seconds)  
C/2  
1C  
2C  
160  
80  
300  
150  
75  
C/32  
C/32  
C/32  
73  
37  
18  
18.7  
18.7  
9.4  
PVD  
-V  
40  
Notes:  
Typical conditions = 25°C, VCC = 5.0V  
Mid = 0.5 CC ±0.5V  
Tolerance on all timing is ±12%.  
V
*
4
bq2002C  
_______________________________________________________________________  
PVD and -V Termination  
There are two modes for voltage termination, depending on  
the state of TM. For -V (TM = high), if VBAT is lower than any  
previously measured value by 12mV ±3mV, fast charge is  
terminated. For PVD (TM = low or mid), a decrease of 2.5mV  
±2.5mV terminates fast charge. The PVD and -V tests are  
valid in the range 1V<VBAT <2V.  
Maximum charge time is configured using the TM pin. Time  
settings are available for corresponding charge rates of C/2,  
1C, and 2C. Maximum time-out termination is enforced on the  
fast-charge phase. There is no time limit on the trickle-charge  
phase.  
Pulse-Trickle Charge  
Synchronized Voltage Sampling  
Pulse-trickle is used to compensate for self-discharge while  
the battery is idle in the charger. The battery is pulse-trickle  
charged by driving the CC pin active once per second for the  
period specified in Table 1. This results in a trickle rate of  
C/32.  
Voltage sampling at the BAT pin for PVD and -V termination  
may be synchronized to an external stimulus using the INH  
input. Low-high-low input pulses between 100ns and 3.5ms in  
width must be applied at the INH pin with a frequency  
greater than the “maximum synchronized sampling period”  
set by the state of the TM pin as shown in Table 1. Voltage is  
sampled on the falling edge of such pulses. If the time between  
pulses is greater than the synchronizing period, voltage  
sampling “free-runs” at once every 17 seconds. A sample is  
taken by averaging together voltage measurements taken  
57µs apart. The IC takes 32 measurements in PVD mode and  
16 measurements in -V mode. The resulting sample periods  
(9.17 and 18.18ms, respectively) filter out harmonics centered  
around 55 and 109Hz. This technique minimizes the effect of  
any AC line ripple that may feed through the power supply  
from either 50 or 60Hz AC sources. If the INH input remains  
high for more than 12ms, the voltage sample history kept by  
the IC and used for PVD and -V termination decisions is  
erased and a new history is started. Such a reset is required  
when transitioning from free-running to synchronized voltage  
sampling. The response of the IC to pulses less than 100ns in  
width or between 3.5ms and 12ms is indeterminate. The  
tolerance on all timing is ±12%.  
TM Pin  
The TM pin is a three-level pin used to select the charge  
timer, voltage termination mode, trickle rate, and voltage  
hold-off period options. Table 1 describes the states selected  
by the TM pin. The mid-level selection input is developed by a  
resistor divider between VCC and ground that fixes the voltage  
on TM at VCC/2 ± 0.5V. See Figure 4.  
Charge Status Indication  
A fast charge in progress is uniquely indicated when the LED  
pin goes low. In the charge pending state, the LED pin is  
driven low for 500ms, then to high-Z for 500ms. The LED pin  
is driven to the high-Z state for all other conditions. Figure 2  
outlines the state of the LED pin during charge.  
Charge Inhibit  
Fast charge may be inhibited by using the INH pin. When  
high, INH suspends all fast charge activity and the internal  
charge timer. INH freezes the current state of LED until  
inhibit is removed. Temperature monitoring is not affected by  
the INH pin. During charge inhibit, the bq2002C continues to  
pulse-trickle charge the battery per the TM selection. When  
INH returns low, charge control and the charge timer resume  
from the point where INH became active.  
Voltage Termination Hold-off  
A hold-off period occurs at the start of fast charging. During  
the hold-off time, the PVD and -V terminations are disabled.  
This avoids premature termination on the voltage spikes  
sometimes produced by older batteries when fast-charge  
current is first applied. Maximum voltage and temperature  
terminations are not affected by the hold-off period.  
Low-Power Mode  
Maximum Voltage, Temperature, and Time  
The IC enters a low-power state when VBAT is driven above  
the power-down threshold (VPD) where:  
Any time the voltage on the BAT pin exceeds the maximum  
cell voltage, VMCV, fast charge is terminated.  
VPD = VCC - (1V ±0.5V)  
Maximum temperature termination occurs anytime the  
voltage on the TS pin falls below the temperature cut-off  
threshold VTCO, where  
Both the CC pin and the LED are driven to the high-Z state.  
The operating current is reduced to less than 1µA in this  
mode. When VBAT returns to a value below VPD, the IC pulse-  
trickle charges until the next new charge cycle begins.  
VTCO = 0.5 x VCC ± 5%.  
5
bq2002C  
5
bq2002C  
Absolute Maximum Ratings  
Symbol  
VCC  
Parameter  
VCC relative to VSS  
Minimum  
-0.3  
Maximum  
+7.0  
Unit  
V
Notes  
VT  
DC voltage applied on any pin  
excluding VCC relative to VSS  
-0.3  
+7.0  
V
TOPR  
Operating ambient temperature  
Storage temperature  
0
-40  
-
+70  
+85  
°C  
°C  
°C  
°C  
Commercial  
TSTG  
TSOLDER  
TBIAS  
Soldering temperature  
+260  
+85  
10 sec max.  
Temperature under bias  
-40  
Note:  
Permanent device damage may occur if Absolu te Ma xim u m Ra tin gs are exceeded. Functional opera-  
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-  
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.  
DC Thresholds (T = 0 to 70°C; V  
±20%)  
CC  
A
Symbol  
Parameter  
Rating  
Tolerance  
Unit  
Notes  
VTCO  
Temperature cutoff  
0.5 VCC  
*
V
±5%  
VTS VTCO inhibits/terminates  
fast charge  
VHTF  
High-temperature fault  
Maximum cell voltage  
Minimum cell voltage  
V
V
0.6 VCC  
±5%  
±5%  
VTS VHTF inhibits fast charge  
start  
VMCV  
2
VBAT VMCV inhibits/terminates  
fast charge  
VLBAT  
V
0.175 VCC  
-12  
±20%  
±3  
VBAT VLBAT inhibits fast charge  
BAT input change for  
mV  
-V  
-V detection  
PVD  
BAT input change for  
PVD detection  
-2.5  
mV  
±2.5  
6
bq2002C  
Recommended DC Operating Conditions (T = 0 to 70°C)  
A
Symbol  
VCC  
Condition  
Supply voltage  
Minimum  
Typical  
Maximum  
Unit  
V
Notes  
4.0  
5.0  
6.0  
2
VDET  
VBAT  
VTS  
-V, PVD detect voltage  
Battery input  
1
0
-
-
-
-
-
-
V
VCC  
VCC  
-
V
Thermistor input  
Logic input high  
Logic input high  
Logic input mid  
0.5  
V
VTS < 0.5V prohibited  
VIH  
0.5  
V
INH  
TM  
TM  
VCC - 0.5  
-
V
VCC  
VCC  
VIM  
V
- 0.5  
+ 0.5  
2
2
VIL  
Logic input low  
Logic input low  
Logic output low  
Power down  
-
-
-
-
-
0.1  
V
V
V
V
INH  
-
0.5  
TM  
VOL  
VPD  
-
0.8  
LED, CC, IOL = 10mA  
VCC - 1.5  
VCC - 0.5  
VBAT VPD max. powers  
down bq2002C;  
VBAT < VPD min. =  
normal operation.  
ICC  
Supply current  
-
-
500  
µA  
µA  
Outputs unloaded,  
VCC = 5.1V  
ISB  
IOL  
IL  
Standby current  
LED, CC sink  
Input leakage  
-
10  
-
-
-
-
-
1
-
VCC = 5.1V, VBAT = VPD  
mA @VOL = VSS + 0.8V  
±1  
-
µA  
µA  
INH, CC, V = VSS to VCC  
LED, CC  
IOZ  
Output leakage in  
high-Z state  
-5  
Note:  
All voltages relative to VSS.  
7
bq2002C  
Impedance  
Symbol  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
M  
MΩ  
RBAT  
RTS  
Battery input impedance  
TS input impedance  
50  
50  
-
-
-
-
Timing (T = 0 to +70°C; V  
±10%)  
CC  
A
Symbol  
dFCV  
Parameter  
Minimum Typical Maximum  
-12 12  
Unit  
Notes  
Time base variation  
-
%
Note:  
Typical is at TA = 25°C, VCC = 5.0V.  
8
bq2002C  
(
)
8-Pin DIP PN  
(
)
8-Pin PN 0.300" DIP  
Inches  
Millimeters  
D
Min.  
0.160  
0.015  
0.015  
0.055  
0.008  
0.350  
0.300  
0.230  
0.300  
0.090  
0.115  
0.020  
Max.  
0.180  
0.040  
0.022  
0.065  
0.013  
0.380  
0.325  
0.280  
0.370  
0.110  
0.150  
0.040  
Min.  
4.06  
0.38  
0.38  
1.40  
0.20  
8.89  
7.62  
5.84  
7.62  
2.29  
2.92  
0.51  
Max.  
4.57  
1.02  
0.56  
1.65  
0.33  
9.65  
8.26  
7.11  
9.40  
2.79  
3.81  
1.02  
Dimension  
A
A1  
B
E1  
E
B1  
C
A
B1  
A1  
D
E
L
C
E1  
e
B
S
G
L
e
G
S
9
bq2002C  
8-Pin SOIC Narrow (SN)  
(
)
8-Pin SN 0.150" SOIC  
Inches  
Millimeters  
Min.  
Min.  
0.060  
0.004  
0.013  
0.007  
0.185  
0.150  
0.045  
0.225  
0.015  
Max.  
0.070  
0.010  
0.020  
0.010  
0.200  
0.160  
0.055  
0.245  
0.035  
Max.  
1.78  
0.25  
0.51  
0.25  
5.08  
4.06  
1.40  
6.22  
0.89  
Dimension  
A
1.52  
0.10  
0.33  
0.18  
4.70  
3.81  
1.14  
5.72  
0.38  
A1  
B
C
D
E
e
H
L
10  
bq2002C  
____________________________________________________________________________  
Data Sheet Revision History  
Change No.  
Page No.  
Description  
Revised format and outline of this data sheet  
Removed "top-off"  
1
2
All  
5
Note: Change 1 = Sept. 1997 B changes from Dec. 1995.  
Note: Change 2 = July 2011  
Ordering Information  
11  
PACKAGE OPTION ADDENDUM  
www.ti.com  
29-Jul-2011  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
BQ2002CPN  
BQ2002CPNE4  
BQ2002CSN  
ACTIVE  
ACTIVE  
ACTIVE  
PDIP  
PDIP  
SOIC  
P
P
D
8
8
8
50  
50  
75  
Pb-Free (RoHS)  
Pb-Free (RoHS)  
CU NIPDAU N / A for Pkg Type  
CU NIPDAU N / A for Pkg Type  
CU NIPDAU Level-1-260C-UNLIM  
Green (RoHS  
& no Sb/Br)  
BQ2002CSNG4  
BQ2002CSNTR  
BQ2002CSNTRG4  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
SOIC  
D
D
D
8
8
8
75  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
2500  
2500  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
29-Jul-2011  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
28-Jul-2011  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
BQ2002CSNTR  
SOIC  
D
8
2500  
330.0  
12.4  
6.4  
5.2  
2.1  
8.0  
12.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
28-Jul-2011  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SOIC  
SPQ  
Length (mm) Width (mm) Height (mm)  
340.5 338.1 20.6  
BQ2002CSNTR  
D
8
2500  
Pack Materials-Page 2  
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