BQ24080DRCT [TI]

SINGLE-CHIP, LI-ION AND LI-POL CHARGER IC; 单芯片,锂离子和锂聚合物充电器IC
BQ24080DRCT
型号: BQ24080DRCT
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

SINGLE-CHIP, LI-ION AND LI-POL CHARGER IC
单芯片,锂离子和锂聚合物充电器IC

电源电路 电源管理电路 光电二极管
文件: 总16页 (文件大小:912K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
bq24080  
www.ti.com  
SLUS698BMARCH 2006REVISED MAY 2006  
SINGLE-CHIP, LI-ION AND LI-POL CHARGER IC  
FEATURES  
DESCRIPTION  
Small 3 mm × 3 mm MLP Package  
The bq24080 is a highly integrated and flexible Li-Ion  
linear charge device targeted at space-limited  
charger applications. It offers an integrated power  
FET and current sensor, high-accuracy current and  
voltage regulation, charge status, and charge  
termination, in a single monolithic device. An external  
resistor sets the magnitude of the charge current.  
Integrated Power FET and Current Sensor for  
Up to 1-A Charge Applications From AC  
Adapter  
Precharge Conditioning With Safety Timer  
Charge and Power Good (AC Adapter Present  
With Fixed Safety) Status Output  
The bq24080 charges the battery in three phases:  
conditioning, constant current, and constant voltage.  
Charge is terminated based on minimum current. An  
internal charge timer provides a backup safety for  
charge termination. The bq24080 automatically  
restarts the charge if the battery voltage falls below  
an internal threshold. The bq24080 automatically  
enters sleep mode when the input supply is  
removed.  
Automatic Sleep Mode for Low-Power  
Consumption  
Fixed 7-Hour Fast Charge Safety Timer  
Ideal for Low-Dropout Charger Designs for  
Single-Cell Li-Ion or Li-Pol Packs in  
Space-Limited Portable Applications  
APPLICATIONS  
PDAs, MP3 Players  
Digital Cameras  
Internet Appliances  
Smartphones  
VDC  
PACK+  
BATTERY PACK  
bq24080  
AC  
ADAPTER  
GND  
+
1
IN  
OUT 10  
SYSTEM  
PACK-  
SYSTEM  
2
3
4
5
GND  
9
8
7
6
CE  
INTERFACE  
STAT1  
STAT2  
VSS  
PG  
GND  
R
SET  
ISET  
UDG-02184  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2006, Texas Instruments Incorporated  
bq24080  
www.ti.com  
SLUS698BMARCH 2006REVISED MAY 2006  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION  
CHARGE  
REGULATION  
VOLTAGE (V)  
FAST-CHARGE TIMER  
(HOURS)  
PART  
NUMBER(1)(2)  
TJ  
FUNCTIONS  
MARKINGS  
bq24080DRCR  
bq24080DRCT  
-40°C to 125°C  
4.2  
CE and PG  
7
BRO  
(1) The DRC package is available taped and reeled only in quantities of 3,000 devices per reel.  
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
Web site at www.ti.com.  
DISSIPATION RATINGS  
TA < 40°C  
POWER RATING  
DERATING FACTOR  
ABOVE TA = 25°C  
PACKAGE  
θJA  
θJC  
DRC(1)  
46.87 °C/W  
4.95 °C/W  
1.5 W  
0.021 W/°C  
(1) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a copper pad on the board. This is  
connected to the ground plane by a 2 x 3 via matrix.  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range unless otherwise noted(1)  
bq24080  
-0.3 to 7  
15  
UNIT  
V
VI  
Input voltage(2)  
IN, CE, ISET, OUT, PG, STAT1, STAT2  
Output sink/source current  
Output current  
STAT1, STAT2, PG  
OUT  
mA  
A
1.5  
TA  
Operating free-air temperature range  
Junction temperature range  
°C  
-40 to 125  
TJ  
°C  
Tstg  
Storage temperature  
–65 to 150  
300  
°C  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages are with respect to VSS  
.
RECOMMENDED OPERATING CONDITIONS  
MIN  
4.5  
0
MAX  
6.5  
UNIT  
V
VCC  
TJ  
Supply voltage  
Operating junction temperature range  
125  
°C  
2
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SLUS698BMARCH 2006REVISED MAY 2006  
ELECTRICAL CHARACTERISTICS  
over 0°C TJ 125°C and recommended supply voltage (unless otherwise noted)  
PARAMETER  
INPUT CURRENT  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
ICC(VCC)  
VCC current  
VCC > VCC(min)  
1.2  
2
2
5
mA  
Sum of currents into OUT pin,  
VCC < V(SLP)  
ICC(SLP)  
Sleep current  
ICC(STBY)  
IIB(OUT)  
IIB(CE)  
Standby current  
CE = High, 0°C TJ 85°C  
Charge DONE, VCC > VCC(MIN)  
CE = High  
150  
5
µA  
Input current on OUT pin  
Input current on CE pin  
1
1
VOLTAGE REGULATION VO(REG) + V(DO–MAX) VCC , I(TERM) < IO(OUT) 1 A  
VO(REG)  
Output voltage  
4.2  
V
TA = 25°C  
–0.35%  
–1%  
0.35%  
1%  
Voltage regulation accuracy  
VO(OUT) = VO(REG), IO(OUT) = 1 A  
VO(REG) + V(DO)) VCC  
V(DO)  
Dropout voltage (V(IN)–V(OUT)  
)
350  
500  
mV  
CURRENT REGULATION  
IO(OUT)  
Output current range(1)  
VI(OUT) > V(LOWV)  
VI(IN) – VI(OUT) > V(DO)  
CC 4.5 V  
,
,
50  
1000  
mA  
V
V
Voltage on ISET pin, VCC 4.5 V,  
VI 4.5 V, VI(OUT) > V(LOWV)  
VI – VI(OUT) > V(DO)  
V(SET)  
Output current set voltage  
Output current set factor  
,
2.463  
2.5  
2.538  
50 mA IO(OUT) 1 A  
10 mA IO(OUT) < 50 mA  
1 mA IO(OUT) < 10 mA  
307  
296  
246  
322  
320  
320  
337  
346  
416  
K(SET)  
PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION  
Precharge to fast-charge transition  
threshold  
V(LOWV)  
Voltage on OUT pin  
2.8  
3
3.2  
V
V
CC(MIN) 4.5 V, tFALL = 100 ns,  
Deglitch time for fast-charge to  
precharge transition  
10-mV overdrive,  
VI(OUT) decreasing below threshold  
250  
5
375  
500  
100  
270  
ms  
mA  
mV  
IO(PRECHG) Precharge range(2)  
V(PRECHG) Precharge set voltage  
TERMINATION DETECTION  
0 V < VI(OUT) < V(LOWV), t < t(PRECHG)  
Voltage on ISET pin,  
VO(REG) = 4.2 V,  
0 V < VI(OUT) > V(LOWV), t < t(PRECHG)  
240  
255  
Charge termination detection  
I(TERM)  
VI(OUT) > V(RCH), t < t(TRMDET)  
5
100  
265  
mA  
mV  
range(3)  
Voltage on ISET pin,  
VO(REG) = 4.2 V,  
VI(OUT) > V(RCH), t < t(TRMDET)  
Charge termination detection set  
V(TERM)  
voltage  
235  
250  
375  
VCC(MIN) 4.5 V, tFALL = 100 ns  
Deglitch time for termination  
detection  
tTRMDET  
charging current decreasing below  
10-mV overdrive  
250  
500  
ms  
(1) See Equation 2 in the Function Description section.  
(2) See Equation 1 in the Function Description section.  
(3) See Equation 3 in the Function Description section.  
3
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SLUS698BMARCH 2006REVISED MAY 2006  
ELECTRICAL CHARACTERISTICS (continued)  
over 0°C TJ 125°C and recommended supply voltage (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
BATTERY RECHARGE THRESHOLD  
VO(REG)  
VO(REG)  
VO(REG)–  
V(RCH)  
Recharge threshold  
V
0.115  
0.10  
0.085  
VCC(MIN) 4.5 V, tFALL = 100 ns  
t(DEGL)  
Deglitch time for recharge detect  
decreasing below or increasing  
above threshold, 10-mV overdrive  
250  
375  
500  
ms  
STAT1, STAT2, and PG OUTPUTS  
VOL  
Low-level output saturation voltage  
IO = 5 mA  
0.25  
0.4  
V
CHARGE ENABLE (CE), INPUTS  
VIL  
Low-level input voltage  
High-level input voltage  
CE, low-level input current  
CE, high-level input current  
IIL = 10 µA  
IIL = 20 µA  
0
1.4  
-1  
V
VIH  
IIL  
µA  
IIH  
1
TIMERS  
t(PRECHG)  
t(CHG)  
I(FAULT)  
Precharge time  
1,620  
1,800  
25,200  
200  
1,930  
s
s
Charge time  
22,680  
27,720  
Timer fault recovery current  
µA  
SLEEP COMPARATOR  
V
CC VI(OUT)  
V(SLP)  
Sleep-mode entry threshold voltage  
+ 80 mV  
2.3 V VI(OUT) VO(REG)  
V
V
+ 190  
CC VI(OUT)  
V(SLPEXIT) Sleep-mode exit threshold voltage  
Sleep-mode deglitch time  
V(IN) decreasing below threshold,  
tFALL = 100 ns, 10-mV overdrive  
250  
375  
500  
2.6  
ms  
THERMAL SHUTDOWN ENTRY THRESHOLDS  
T(SHTDWN) Thermal trip threshold  
Thermal hysteresis  
165  
15  
TJ increasing  
°C  
UNDERVOLTAGE LOCKOUT  
V(UVLO)  
Undervoltage lockout  
Hysteresis  
Decreasing VCC  
2.4  
2.5  
27  
V
mV  
4
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SLUS698BMARCH 2006REVISED MAY 2006  
PIN ASSIGNMENT  
DRC PACKAGE  
(TOP VIEW)  
VSS STAT2 STAT1 GND  
IN  
5
4
3
bq24080  
8
2
1
6
7
9
10  
GND  
ISET  
OUT  
CE  
PG  
TERMINAL FUNCTIONS  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
NO.  
1
IN  
I
I
Adapter dc voltage  
CE  
9
Charge enable input (active low voltage, min 0.1 µF input capacitor)  
Ground  
GND  
ISET  
OUT  
PG  
2, 7  
6
-
I
Charge current. Precharge and termination set point.  
Charge current output (minimum 0.1 µF capacitor to ground)  
Power-good status output (open-drain)  
Charge status output 1 (open-drain)  
Charge status output 2 (open-drain)  
Ground  
10  
8
O
O
O
O
-
STAT1  
STAT2  
VSS  
3
4
5
There is an internal electrical connection between the exposed thermal pad and VSS pin of the device. The  
exposed thermal pad must be connected to the same potential as the VSS pin on the printed-circuit board. Do  
not use the thermal pad as the primary ground input for the device. VSS pin must be connected to  
ground at all times.  
Thermal  
Pad  
-
-
5
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SLUS698BMARCH 2006REVISED MAY 2006  
FUNCTIONAL BLOCK DIAGRAM  
V
I(IN)  
IN  
OUT  
V
I(OUT)  
ISET  
V
I(SET)  
GND  
sensefet  
REF  
BIAS  
AND  
UVLO  
V
O(REG)  
UVLO  
CHG ENABLE  
CE  
V
V
BAT  
I(OUT)  
SLEEP  
ISET  
*
V
I(IN)  
PRECHARGE  
(C/10)  
CHARGE  
CONTROL,  
TIMER,  
V
O(REG)  
AND  
GND  
DISPLAY  
LOGIC  
V
RECHARGE  
I(OUT)  
*
PG  
V
I(OUT)  
PRECHARGE  
*
V
I(SET)  
STAT1  
V
I(SET)  
TERM  
*
STAT2  
VSS  
SIGNAL DEGLITCHED  
*
UDG-02185  
6
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SLUS698BMARCH 2006REVISED MAY 2006  
DROPOUT VOLTAGE  
vs  
JUNCTION TEMPERATURE  
450  
I
= 1000 mA  
O(OUT)  
400  
350  
I
= 750 mA  
= 500 mA  
= 250 mA  
O(OUT)  
300  
250  
I
O(OUT)  
200  
150  
I
O(OUT)  
100  
50  
0
0
50  
100  
150  
o
T
J
- Junction Temperature - C  
Figure 1.  
The bq24080 supports a precision Li-Ion, Li-Pol charging system suitable for single cells. Figure 2 shows a  
typical charge profile, and Figure 3 shows an operational flow chart.  
PreœConditioning  
Phase  
Current Regulation Phase  
Voltage Regulation and Charge Termination Phase  
Regulation  
Voltage  
Regulation  
Current  
Charge  
Voltage  
Minimum  
Charge  
Voltage  
Charge  
Complete  
Charge  
Pre-  
Conditioning  
and Term  
Current  
Detect  
UDG-04087  
Figure 2. Typical Charging Profile  
7
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SLUS698BMARCH 2006REVISED MAY 2006  
FUNCTIONAL DESCRIPTION  
POR  
SLEEP MODE  
V
> V  
I(OUT)  
CC  
No  
Indicate SLEEP  
MODE  
checked at  
all times  
Yes  
Regulate  
I
O(PRECHG)  
Reset and Start  
timer  
(PRECHG)  
V
I(OUT)  
<V  
(LOWV)  
Yes  
t
Indicate Charge-  
In-Progress  
No  
Reset all timers,  
Start t timer  
(CHG)  
Regulate Current  
or Voltage  
Indicate Charge-  
In-Progress  
No  
V
<V  
I(OUT) (LOWV)  
Yes  
Yes  
t
(PRECHG)  
No  
Expired?  
Expired?  
t
(CHG)  
Yes  
No  
Yes  
Fault Condition  
V
<V  
I(OUT) (LOWV)  
Yes  
Indicate Fault  
No  
V
>V  
(RCH)  
?
I(OUT)  
I
(TAPER)  
No  
detection?  
No  
Enable I  
(FAULT)  
current  
Yes  
No  
Turn off charge  
V
>V  
?
(RCH)  
I(OUT)  
Yes  
Indicate DONE  
Yes  
Yes  
No  
Disable I  
(FAULT)  
current  
V
<V ?  
(RCH)  
I(OUT)  
Figure 3. Operational Flow Chart  
8
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bq24080  
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SLUS698BMARCH 2006REVISED MAY 2006  
FUNCTIONAL DESCRIPTION (continued)  
Battery Preconditioning  
During a charge cycle if the battery voltage is below the V(LOWV) threshold, the bq24080 applies a precharge  
current, IO(PRECHG), to the battery. This feature revives deeply discharged cells. The resistor connected between  
the ISET and VSS, RSET determines the precharge rate. The V(PRECHG) and K(SET) parameters are specified in the  
specifications table.  
K
x V  
(SET)  
(PRECHG)  
I
=
O(PRECHG)  
R
SET  
(1)  
The bq24080 activates a safety timer, t(PRECHG), during the conditioning phase. If the V(LOWV) threshold is not  
reached within the timer period, the bq24080 turns off the charger and enunciates FAULT on the STATx pins.  
See the Timer Fault Recovery section for additional details.  
Battery Fast Charge Constant Current  
The bq24080 offers on-chip current regulation with programmable set point. The resistor connected between the  
ISET and VSS, RSET determines the charge rate. The V(SET) and K(SET) parameters are specified in the  
specifications table.  
K
x V  
(SET)  
(SET)  
I
=
O(OUT)  
R
SET  
(2)  
Battery Fast Charge Voltage Regulation  
The voltage regulation feedback is through the OUT pin. This input is tied directly to the positive side of the  
battery pack. The bq24080 monitors the battery-pack voltage between the OUT and VSS pins. When the battery  
voltage rises to VO(REG) threshold, the voltage regulation phase begins and the charging current begins to taper  
down.  
As a safety backup, the bq24080 also monitors the charge time in the charge mode. If charge is not terminated  
within this time period, t(CHG), the charger is turned off and FAULT is set on the STATx pins. See the Timer Fault  
Recovery section for additional details.  
Charge Termination Detection and Rescue  
The bq24080 monitors the charging current during the voltage regulation phase. Once the termination threshold,  
I(TERM), is detected, charge is terminated. The V(TERM) and K(SET) parameters are specified in the specifications  
table.  
K
x V  
(SET)  
(TERM)  
I
=
O(TERM)  
R
SET  
(3)  
After charge termination, the bq24080 restarts the charge once the voltage on the OUT pin falls below the V(RCH)  
threshold. This feature keeps the battery at full capacity at all times.  
The bq24080 monitors the charging current during the voltage regulation phase. Once the termination threshold,  
I(TERM), is detected, the charge is terminated immediately.  
The resistor connected between the ISET and VSS, RSET determines the current level at the termination  
threshold.  
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FUNCTIONAL DESCRIPTION (continued)  
Sleep Mode  
The bq24080 enters the low-power sleep mode if the input power (IN) is removed from the circuit. This feature  
prevents draining the battery during the absence of input supply.  
Change Status Outputs  
The open-drain STAT1 and STAT2 outputs indicate various charger operations as shown in the following table.  
These status pins can be used to drive LEDs or communicate to the host processor. Note that OFF indicates the  
open-drain transistor is turned off.  
Table 1. Status Pin Summary  
CHANGE STATE  
Precharge in progress  
Fast charge in progress  
Charge done  
STAT1  
ON  
STAT2  
ON  
ON  
OFF  
ON  
OFF  
Charge suspend (temperature)  
Timer fault  
OFF  
OFF  
Sleep mode  
PG Output  
The open-drain PG (Power Good) output pulls low when a valid input voltage is present. This output is turned  
off, (high impedance) sleep mode. The PG pin can be used to drive an LED or communicate to the host  
processor.  
CE Input (Charge Enabled)  
The CE digital input is used to disable or enable the charge process. A low-level signal on this pin enables the  
charge and a high-level signal disables the charge and places the device in a low-power mode. A high-to-low  
transition on this pin also resets all timers and timer fault conditions.  
10  
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Timer Fault Recovery  
As shown in Figure 3, bq24080 provides a recovery method to deal with timer fault conditions. The following  
summarizes this method:  
Condition Number 1  
OUT pin voltage is above the recharge threshold (V(RCH)), and a timeout fault occurs.  
Recovery method: bq24080 waits for the OUT pin voltage to fall below the recharge threshold. This could  
happen as a result of a load on the battery, self-discharge, or battery removal. Once the OUT pin voltage falls  
below the recharge threshold, the bq24080 clears the fault and starts a new charge cycle. A POR or CE toggle  
also clears the fault.  
Condition number 2  
OUT pin voltage is below the recharge threshold (V(RCH)), and a timeout fault occurs  
Recovery method: Under this scenario, the bq24080 applies the I(FAULT) current. This small current is used to  
detect a battery removal condition and remains on as long as the battery voltage stays below the recharge  
threshold. If the OUT pin voltage goes above the recharge threshold, then the bq24080 disables the I(FAULT)  
current and executes the recovery method described for condition number 1. Once the OUT pin voltage falls  
below the recharge threshold, the bq24080 clears the fault and starts a new charge cycle. A POR or CE toggle  
also clears the fault.  
Selecting Input and Output Capacitors  
In most applications, all that is needed is a high-frequency decoupling capacitor on the input power pin. A 0.1-µF  
ceramic capacitor, placed in close proximity to the IN pin and GND pad works well. In some applications, it may  
be necessary to protect against a hot plug input voltage overshoot. This is done in three ways:  
1. The best way is to add an input zener, 6.2 V, between the IN pin and VSS.  
2. A low power zener is adequate for the single event transient. Increasing the input capacitance lowers the  
characteristic impedance which makes the input resistance move effective at damping the overshoot, but  
risks damaging the input contacts by the high inrush current.  
3. Placing a resistor in series with the input dampens the overshoot, but causes excess power dissipation.  
The bq24080 only requires a small capacitor for loop stability. A 0.1-µF ceramic capacitor placed between the  
OUT and GND pad is typically sufficient.  
1.5 kW  
100 kW  
AC  
bq24080  
ADAPTER  
PACK+  
VDC  
1
IN  
OUT 10  
+
0.1 mF  
1.5 kW  
PACK-  
0.1 mF  
GND  
2
GND  
9
CE  
1.5 kW  
3
4
5
STAT1  
STAT2  
VSS  
8
7
6
PG  
GND  
Charge Current  
Translator Output  
ISET  
1.13 kW  
R
SET  
Figure 4. Typical Application Circuit  
11  
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SLUS698BMARCH 2006REVISED MAY 2006  
APPLICATION INFORMATION  
Thermal Considerations  
The bq24080 is packaged in a thermally enhanced MLP package. The package includes a thermal pad to  
provide an effective thermal contact between the device and the printed-circuit board (PCB). Full PCB design  
guidelines for this package are provided in the application note entitled, QFN/SON PCB Attachment (TI  
Literature Number SLUA271).  
The most common measure of package thermal performance is thermal impedance (θJA) measured (or  
modeled) from the device junction to the air surrounding the package surface (ambient). The mathematical  
expression for θJA is:  
T - T  
J
A
q
=
JA  
P
(4)  
Where:  
TJ = device junction temperature  
TA = ambient temperature  
P = device power dissipation  
Factors that can greatly influence the measurement and calculation of θJA include:  
Orientation of the device (horizontal or vertical)  
Volume of the ambient air surrounding the device under test and airflow  
Whether other surfaces are in close proximity to the device being tested  
Use multiple 10 - 13 mil vias in the PowerPAD™ to copper ground plane.  
Avoid cutting the ground plane with a signal trace near the power IC.  
The PCB must be sized to have adequate surface area for heat dissipation.  
FR4 (figerglass) thickness should be minimized.  
The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal Power  
FET. It can be calculated from the following equation:  
P = (V - V  
(IN)  
) x I  
(OUT)  
O(OUT)  
(5)  
Due to the charge profile of Li-xx batteries, the maximum power dissipation is typically seen at the beginning of  
the charge cycle when the battery voltage is at its lowest. See Figure 2.  
PCB Layout Considerations  
It is important to pay special attention to the PCB layout. The following provides some guidelines:  
To obtain optimal performance, the decoupling capacitor from VCC to V(IN) and the output filter capacitors  
from OUT to VSS should be placed as close as possible to the bq24080, with short trace runs to both signal  
and VSS pins. The VSS pin should have short trace runs to the GND pin.  
All low-current VSS connections should be kept separate from the high-current charge or discharge paths  
from the battery. Use a single-point ground technique incorporating both the small-signal ground path and  
the power ground path.  
The high-current charge paths into IN and from the OUT pins must be sized appropriately for the maximum  
charge current in order to avoid voltage drops in these traces.  
The bq24080 is packaged in a thermally enhanced MLP package. The package includes a thermal pad to  
provide an effective thermal contact between the device and the printed circuit board (PCB). Full PCB  
design guidelines for this package are provided in the application note entitled, QFN/SON PCB Attachment  
(TI Literature Number SLUA271).  
12  
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