BQ25176M [TI]
适用于单节锂离子和磷酸铁锂电池且具有 VINDPM 的 800mA 线性电池充电器;型号: | BQ25176M |
厂家: | TEXAS INSTRUMENTS |
描述: | 适用于单节锂离子和磷酸铁锂电池且具有 VINDPM 的 800mA 线性电池充电器 电池 |
文件: | 总30页 (文件大小:2315K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BQ25176M
ZHCSQ82 –SEPTEMBER 2022
BQ25176M 适用于收集应用、具有电池跟踪VINDPM 的0.8A 单节电池线性太阳
能充电器
1 特性
3 说明
• 可承受高达30V 的输入电压
• 基于输入电压的动态电源管理(VINDPM) 跟踪电池
电压
BQ25176M 是一款集成式 800mA 线性太阳能充电
器,适用于单节锂离子、锂聚合物和磷酸铁锂电池,具
有持续充电模式和电池跟踪 VINDPM。 该器件具有为
电池充电的单电源输出。当系统负载与电池并联时,充
电电流会由系统和电池共享。
• 自动睡眠模式,可降低功耗
– 350nA 电池漏电流
– 禁用充电时,输入漏电流为80µA
• 支持单节锂离子、锂聚合物和磷酸铁锂电池
• 操作可使用外部电阻器进行编程
– 用于设置电池稳压电压的VSET:
• 锂离子电池:4.05V、4.15V、4.2V、
4.35V、4.4V
• 磷酸铁锂电池:3.5V、3.6V、3.7V
– 用于设置10mA 至800mA 充电电流的ISET
• 高精度
该器件分四个阶段为锂离子/锂聚合物电池充电:涓流
充电阶段,用于使电池电压达到 VBAT_SHORT;预充电
阶段,用于恢复完全放电的电池;恒流快速充电阶段,
用于使电池充上大部分电量;以及电压调节阶段,用于
使电池电量充满。
在所有充电阶段,内部控制环路都会监控 IC 结温,当
其超过内部温度阈值TREG 时,它会减少充电电流。
充电器功率级和充电电流感测功能均完全集成。该充电
器具有高精度电流和电压调节环路功能、充电状态显示
和自动充电终止功能。充电电压和快速充电电流可通过
外部电阻编程设定。预充电和终止电流阈值由快速充电
电流设置决定。
– 充电电压精度为±0.5%
– 充电电流精度为±10%
• 充电特性
– 预充电电流为20% ISET
– 终止电流为10% ISET
器件信息
– 用于太阳能充电的电池跟踪输入电压动态电源管
理(VINDPM)
器件型号(1)
BQ25176M
封装尺寸(标称值)
封装
WSON (8)
2.0mm x 2.0mm
– 用于充电功能控制的BIAS 引脚
– 用于状态和故障指示的开漏输出
– 用于电源正常指示的开漏输出
• 集成故障保护
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
VIN: 3.0V œ 18V
IN
OUT
1s Li-Ion, LiFePO4
VREF
– 18.1V 输入过压保护
– 基于VSET 的输出过压保护
– 1000mA 过流保护
– 125°C 热调节;150°C 热关断保护
– OUT 短路保护
VSET
ISET
GND
STAT
/PG
BIAS
BQ25176M
– VSET、ISET 引脚短路/开路保护
简化原理图
2 应用
• 智能追踪器
• 低功耗手持设备
• 辅助太阳能充电器
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLUSEV4
BQ25176M
ZHCSQ82 –SEPTEMBER 2022
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Table of Contents
7.4 Device Functional Modes..........................................16
8 Application and Implementation..................................18
8.1 Application Information............................................. 18
8.2 Typical Applications.................................................. 18
9 Power Supply Recommendations................................22
10 Layout...........................................................................22
10.1 Layout Guidelines................................................... 22
10.2 Layout Example...................................................... 22
11 Device and Documentation Support..........................23
11.1 Device Support........................................................23
11.2 接收文档更新通知................................................... 23
11.3 支持资源..................................................................23
11.4 Trademarks............................................................. 23
11.5 Electrostatic Discharge Caution..............................23
11.6 术语表..................................................................... 23
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................5
6.5 Electrical Characteristics.............................................6
6.6 Timing Requirements..................................................8
6.7 Typical Characteristics................................................9
7 Detailed Description......................................................11
7.1 Overview................................................................... 11
7.2 Functional Block Diagram.........................................12
7.3 Feature Description...................................................13
Information.................................................................... 24
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
DATE
REVISION
NOTES
September 2022
*
Initial Release
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5 Pin Configuration and Functions
IN
ISET
BIAS
GND
1
2
3
4
8
7
6
5
OUT
VSET
/PG
BQ25176M
Thermal Pad
STAT
图5-1. DSG Package 8-Pin WSON Top View
表5-1. Pin Functions
PIN
I/O
DESCRIPTION
NAME
NUMBER
IN
1
P
Input power, connected to external DC supply. Bypass IN with at least 1-μF capacitor to GND,
placed close to the IC.
ISET
BIAS
2
3
I
I
Programs the device fast-charge current. External resistor from ISET to GND defines fast charge
current value. Expected range is 30 kΩ (10 mA) to 375 Ω (800 mA). ICHG = KISET / RISET
.
Precharge current is defined as 20% of ICHG. Termination current is defined as 10% of ICHG.
Bias sense pin. Connect an external 10-kΩresistor from this pin to GND. This pin can also be used
as a charging disable pin by pulling the pin to GND by means of an external NMOS. Refer to the
applications section for more information.
GND
STAT
4
5
Ground pin
–
O
Open drain charger status indication output. Connect to pull-up rail via 10-kΩresistor.
LOW indicates charge in progress. HIGH indicates charge complete or charge disabled. When a
fault condition is detected STAT pin blinks at 1 Hz.
PG
6
7
O
I
Open drain charge power good indication output. Connect to pull-up rail via 10-kΩresistor.
PG pulls low when VIN > VIN_LOWV and VOUT + VSLEEPZ < VIN < VIN_OV
.
VSET
Programs the regulation voltage for OUT pin with a pull-down resistor. Valid resistor range is 18.2
kΩto 100 kΩ, values outside this range will suspend charge. Refer to 节7.3.1.2 for voltage level
details. Recommend using ±1% tolerance resistor with <200 ppm/ºC temperature coefficient.
OUT
8
P
Battery connection. System Load may be connected in parallel to battery. Bypass OUT with at least
1-μF capacitor to GND, placed close to the IC.
Thermal Pad
Exposed pad beneath the IC for heat dissipation. Solder thermal pad to the board with vias
connecting to solid GND plane.
—
—
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX
30
UNIT
V
Voltage
IN
Voltage
OUT
13
V
Voltage
ISET, PG, STAT, BIAS, VSET
5.5
5
V
Output Sink Current
Junction temperature
Storage temperature
PG, STAT
TJ
mA
°C
°C
150
150
–40
–65
Tstg
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not
sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,
performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001(1)
±2500
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per ANSI/ESDA/
JEDEC JS-002(2)
±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
18
UNIT
V
VIN
Input voltage
3.0
VOUT
Output voltage
4.4
V
IOUT
Output current
0.8
A
TJ
Junction temperature
IN capacitor
125
°C
–40
1
CIN
µF
COUT
OUT capacitor
1
µF
RVSET
RVSET_TOL
RVSET_TEMPCO
RISET
RBIAS
VSET resistor
18.2
-1
100
1
kΩ
%
Tolerance for VSET resistor
Temperature coefficient for VSET resistor
ISET resistor
200
30
ppm/℃
kΩ
kΩ
0.375
BIAS resistor
10
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6.4 Thermal Information
BQ25176M
DSG
THERMAL METRIC(1)
UNIT
8 PINS
75.2
RθJA
Junction-to-ambient thermal resistance (JEDEC(1)
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
)
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
93.4
41.8
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
3.8
ΨJT
41.7
ΨJB
RθJC(bot)
17.0
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
3.0V < VIN < and VIN > VOUT + VSLEEP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
QUIESCENT CURRENTS
OUT= 4.2V, IN floating or IN = 0V - 5V,
Charge Disabled, TJ = 25 °C
0.35
0.35
80
0.6 µA
0.8 µA
110 µA
µA
IQ_OUT
Quiescent output current (OUT)
OUT= 4.2V, IN floating or IN = 0V - 5V,
Charge Disabled, TJ < 105 °C
Shutdown input current (IN) with
charge disabled via BIAS pin
IN = 5V, Charge Disabled (VBIAS
VBIAS_ENZ), no battery
<
ISD_IN_BIAS
ISTANDBY_IN
IQ_IN
Standby input current (IN) with charge
terminated
IN = 5V, Charge Enabled, charge terminated
190
0.45
IN = 5V, OUT = 3.8V, Charge Enabled,
ICHG = 0A
Quiescent input current (IN)
0.6 mA
INPUT
VIN_OP
IN operating range
3.0
3.05
2.80
30
18
3.15
3.10
V
V
V
VIN_LOWV
VIN_LOWV
VSLEEPZ
VSLEEP
VIN_OV
IN voltage to start charging
IN voltage to stop charging
Exit SLEEP mode threshold
Enter SLEEP mode threshold
VIN overvoltage rising threshold
VIN overvoltage falling threshold
IN rising
3.09
2.95
55
IN falling
IN rising, VIN - VOUT, OUT = 4V
IN falling, VIN - VOUT, OUT = 4V
IN rising
80 mV
50 mV
5
30
18.1
18.4
18.2
18.7
V
V
VIN_OVZ
IN falling
VOUT = 2.9V, VSET = 4.35V, measured at
IN pin
VIN_DPM_MIN
Minimum input voltage DPM threshold
3.15
3.57
3.25
3.35
3.7
V
V
Input voltage DPM threshold tracking VOUT = 3.5V, VSET = 4.35V, measured at
VIN_DPM_BATTRK
3.645
VOUT
IN pin
CONFIGURATION PINS SHORT/OPEN PROTECTION
Highest resistor value considered
short
RISET below this at startup, charger does not
initiate charge, power cycle toggle to reset
RISET_SHORT
350
2.8
Ω
RVSET below this at startup, charger does
not initiate charge, power cycle or TS toggle
to reset
Highest resistor value considered
short
RVSET_SHORT
kΩ
RVSET below this at startup, charger does
RVSET_OPEN
Lowest resistor value considered open not initiate charge, power cycle or TS toggle
to reset
200
425
kΩ
BATTERY CHARGER
VDO
Dropout voltage (VIN - VOUT
)
VIN falling, VOUT = 4.35V, IOUT = 500mA
Tj = 25℃, all VSET settings
mV
%
0.5
0.8
–0.5
–0.8
OUT charge voltage regulation
accuracy
VREG_ACC
%
Tj = -40℃to 125℃, all VSET settings
Typical charge current regulation
range
ICHG_RANGE
KISET
VOUT > VBAT_LOWV
10
800 mA
330
Charge current setting factor, ICHG
KISET / RISET
=
10mA < ICHG < 800mA
270
300
AΩ
720
450
90
800
500
100
10
880 mA
550 mA
110 mA
11 mA
RISET = 375Ω, OUT = 3.8V
RISET = 600Ω, OUT = 3.8V
RISET = 3.0kΩ, OUT = 3.8V
RISET = 30kΩ, OUT = 3.8V
ICHG_ACC
Charge current accuracy
9
Typical pre-charge current, as
percentage of ICHG
IPRECHG
VOUT < VBAT_LOWV
20
%
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6.5 Electrical Characteristics (continued)
3.0V < VIN < and VIN > VOUT + VSLEEP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
144
85
TYP
160
100
20
MAX UNIT
176 mA
110 mA
22 mA
RISET = 375Ω, OUT = 2.5V
RISET = 600Ω, OUT = 2.5V
RISET = 3.0kΩ, OUT = 2.5V
RISET = 30kΩ, OUT = 2.5V
IPRECHG_ACC
Precharge current accuracy
18
1.4
2
2.6 mA
Typical termination current, as
percentage of ICHG
ITERM
VOUT = VREG
10
%
45
8.5
0.4
50
10
1
55 mA
11.5 mA
1.6 mA
RISET = 600Ω, OUT = VREG = 4.2V
RISET = 3.0kΩ, OUT = VREG = 4.2V
RISET =30kΩ, OUT = VREG = 4.2V
ITERM_ACC
Termination current accuracy
Output (OUT) short circuit voltage
rising threshold, for Li-Ion chemistry
VBAT_SHORT
OUT rising, VSET configured for Li-Ion
OUT rising, VSET configured for LiFePO4
2.1
1.1
2.2
1.2
2.3
1.3
V
V
Output (OUT) short circuit voltage
rising threshold, for LiFePO4
chemistry
VBAT_SHORT
Output (OUT) short circuit voltage
hysteresis
VBAT_SHORT_HYS
IBAT_SHORT
OUT falling
200
16
mV
OUT short circuit charging current
VOUT < VBAT_SHORT
12
20 mA
Pre-charge to fast-charge transition
threshold, for Li-Ion chemistry
VBAT_LOWV
OUT rising, VSET configured for Li-Ion
2.7
2.8
3.0
2.1
V
Pre-charge to fast-charge transition
threshold for Li-FePO4 chemistry
VBAT_LOWV
VBAT_LOWV_HYS
VRECHG
OUT rising, VSET configured for LiFePO4
OUT falling
1.9
2.0
100
100
V
Battery LOWV hysteresis
mV
Battery recharge threshold for Li-Ion
chemistry
OUT falling, VSET configured for Li-
IonVREG_ACC - VOUT
75
125 mV
225 mV
Battery recharge threshold for
LiFePO4 chemistry
OUT falling, VSET configured for LiFePO4,
VREG_ACC - VOUT
VRECHG
175
200
IOUT = 400mA, TJ = 25°C
845
845
1000
1450
mΩ
mΩ
RON
Charging path FET on-resistance
IOUT = 400mA, TJ = -40 - 125°C
BATTERY CHARGER PROTECTION
VOUT_OVP
VOUT_OVP
IOUT_OCP
OUT overvoltage rising threshold
VOUT rising, as percentage of VREG
VOUT falling, as percentage of VREG
IOUT rising
103
101
0.9
104
102
1
105
103
1.1
%
%
A
OUT overvoltage falling threshold
Output current limit threshold
TEMPERATURE REGULATION AND TEMPERATURE SHUTDOWN
Typical junction temperature
regulation
TREG
125
°C
Thermal shutdown rising threshold
Thermal shutdown falling threshold
Temperature increasing
150
135
°C
°C
TSHUT
Temperature decreasing
BIAS PIN
IBIAS
BIAS pin current
36.5
40
38
50
39.5 µA
60 mV
Charge Disable threshold. Crossing
this threshold shall shutdown IC
VBIAS_ENZ
BIAS pin voltage falling
Charge Enable threshold. Crossing
this threshold shall restart IC operation
VBIAS_EN
BIAS pin voltage rising
65
75
85 mV
VBIAS_CLAMP
BIAS maximum voltage clamp
BIAS pin open-circuit (float)
2.3
2.6
2.9
0.4
V
V
LOGIC OUTPUT PIN (STAT, PG)
VOL
Output low threshold level
Sink current = 5mA
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6.5 Electrical Characteristics (continued)
3.0V < VIN < and VIN > VOUT + VSLEEP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
IOUT_BIAS
High-level leakage current
Pull up rail 3.3V
1
µA
6.6 Timing Requirements
MIN
NOM
MAX
UNIT
BATTERY CHARGER
tBIAS_DUTY_OFF
tOUT_OCP_DGL
BIAS turn-off time during BIAS duty cycle mode
Deglitch time for IOUT_OCP, IOUT rising
2
s
100
µs
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6.7 Typical Characteristics
CIN = 1 µF, COUT = 1 µF, VIN = 5 V, VOUT = 3.8 V (unless otherwise specified)
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
0.2
0
-40°C
0°C
25°C
85°C
105°C
-40°C
0°C
25°C
85°C
105°C
-0.2
-0.4
-0.6
-0.8
-1
-0.2
-0.4
-0.6
-0.8
-1
0
10
20
30
40
50
60
70
80
90 100
4.5 4.7 4.9 5.1 5.3 5.5 5.7 5.9 6.1 6.3 6.5
VIN (V)
IOUT (mA)
VIN = 5 V
VOUT = 4.2 V
IOUT = 10 mA
VOUT = 4.2 V
图6-2. Load Regulation
图6-1. Line Regulation
10
8
10
8
10mA
50mA
100mA
200mA
400mA
600mA
800mA
6
6
4
4
2
2
0
0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
10mA
50mA
100mA
200mA
300mA
400mA
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
VOUT (V)
4
4.1
-40
-20
0
20
40
60
80
100
Temperature (°C)
VIN = 5 V
Temp = 25ºC
VIN = 5 V
VOUT = 3.8 V
图6-3. ICHG Accuracy vs VOUT
图6-4. ICHG Accuracy vs Temperature
1
0.8
0.6
0.4
0.2
0
3.6V VREG
4.35V VREG
-0.2
-0.4
-0.6
-0.8
-1
-40
-20
0
20
40
60
80
100
Temperature (°C)
图6-6. Dropout Voltage vs Output Current
IOUT = 10 mA
图6-5. VSET Accuracy vs Temperature
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6.7 Typical Characteristics (continued)
CIN = 1 µF, COUT = 1 µF, VIN = 5 V, VOUT = 3.8 V (unless otherwise specified)
175
150
125
100
75
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40°C
0°C
25°C
85°C
105°C
-40°C
0°C
25°C
85°C
105°C
50
25
0
1
2
3
4
5
6
7
4
4.5
5
5.5
VIN (V)
6
6.5
7
VIN (V)
BIAS Pin = LOW
VOUT = 0 V
ICHG = 0 A
图6-7. Input Shutdown Current vs Input Voltage
图6-8. Input Quiescent Current vs Input Voltage
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-40°C
0°C
25°C
85°C
105°C
1
2
3
4
5
VOUT (V)
VIN = 0 V
VOUT = 4.35 V
图6-9. Output Quiescent Current vs Output Voltage
图6-10. Termination Current Accuracy vs Termination Current
Setting
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7 Detailed Description
7.1 Overview
The BQ25176M is an integrated 800-mA linear solar charger for 1-cell Li-Ion, Li-Polymer, and LiFePO4 batteries.
The device has a single power output that charges the battery. The system load can be placed in parallel with
the battery. When the system load is placed in parallel with the battery, the output current is shared between the
system and the battery.
The device has four phases for charging a Li-Ion/Li-Poly battery: trickle charge to bring the battery voltage up to
VBAT_SHORT, precharge to recover a fully discharged battery, fast-charge constant current to supply the bulk of
the charge, and voltage regulation to reach full capacity.
The charger includes flexibility in programming of the fast-charge current and regulation voltage. This charger is
designed to work with a standard USB connection or dedicated charging adapter (DC output).
The charger also comes with a full set of safety features: overvoltage protection, and configuration pin (VSET,
ISET) short and open protection. All of these features and more are described in detail below.
The charger is designed for a single path from the input to the output to charge the battery. Upon application of a
valid input power source, the configuration pins are checked for short/open circuit.
If the battery voltage is below the VBAT_LOWV threshold, the battery is considered discharged and a
preconditioning cycle begins. If the battery voltage is below VBAT_SHORT, the charge current is IBAT_SHORT. If the
battery voltage is higher than VBAT_SHORT but lower than VBAT_LOWV, the amount of precharge current is 20% of
the programmed fast-charge current via the ISET pin.
Once the battery has charged to the VBAT_LOWV threshold, Fast Charge Mode is initiated. The fast charge
constant current is programmed using the ISET pin. The constant current phase provides the bulk of the charge.
Power dissipation in the IC is greatest in fast charge with a lower battery voltage. If the IC temperature reaches
T
REG, the IC enters thermal regulation. 图 7-1 shows the typical lithium battery charging profile with thermal
regulation. Under normal operating conditions, the IC junction temperature is less than TREG and thermal
regulation is not entered.
Once the battery has charged to the regulation voltage, the voltage loop takes control and holds the battery at
the regulation voltage until the current tapers to the termination threshold. The termination threshold is 10% of
the programmed fast-charge current.
Further details are described in 节7.3.
Thermal
Regulation
Phase
Current
Regulation
Phase
Voltage Regulation and
Charge Termination
Phase
Pre-
Conditioning
Phase
DONE
V
REG
I
CHG
Battery Current,
I
FAST-CHARGE
CURRENT
OUT
Battery
Voltage,
V
OUT
Charge
Complete
Status,
Charger
Off
PRE-CHARGE
CURRENT AND
TERMINATION
THRESHOLD
V
BAT_LOWV
I
TERM
I
PRECHG
T
REG
0A
Temperature, Tj
图7-1. Lithium-Ion Battery Charging Profile with Thermal Regulation
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7.2 Functional Block Diagram
OUT
IN
VBAT
ICHG
VIN
+
+
VREF
VIN_OV
VSLEEPZ
VIN_UVLOZ
ICHG_REF
VBAT_REF
INPUT
MONITOR
+
QBLK
CNTRL
TREG
TJ
/PG
CEN
FAULT
ISET
STAT
/PG
ICHG_REF
VBAT_REF
PIN DETECT
&
REF DAC
STAT
/PG
VSET
TREG
ITERM
TJ
TERM
TSHUT
+
+
+
ICHG
TSHUT
(VBAT_REF
- VRECHG)
VBIAS_CLAMP
RECHG
VBAT
IBIAS
BIAS
GND
VBIAS
CHARGE
CONTROL
VBAT_LOWV
VBAT
VOUT_OVP
IOUT_OCP
BATLOW
+
+
+
VBAT
VBAT_SHORT
VOUT_OVP
VBAT_SHORT
ICHG
+
VBAT
IOUT_OCP
VIN_DPM
VINDPM
+
VIN
STATE
MONITOR
BQ25176M
FAULT
STAT
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7.3 Feature Description
7.3.1 Device Power Up from Input Source
When an input source is plugged in and charge is enabled, the device checks the input source voltage to turn on
all the bias circuits. It detects and sets the charge current and charge voltage limits before the linear regulator is
started. The power up sequence from input source is as listed:
1. ISET pin detection
2. VSET pin detection to select charge voltage
3. Charger power up
7.3.1.1 ISET Pin Detection
After a valid VIN is plugged in, the device checks the resistor on the ISET pin for a short circuit (RISET
<
RISET_SHORT). If a short condition is detected, the charger remains in the FAULT state until the input or BIAS pin
is toggled. If the ISET pin is open-circuit, the charger proceeds through pin detection and starts the charger with
no charge current. This pin is monitored while charging and changes in RISET while the charger is operating will
immediately translate to changes in charge current.
An external pulldown resistor (±1% or better is recommended to minimize charge current error) from the ISET
pin to GND sets the charge current as:
KISET
ICHG
=
RISET
(1)
where:
• ICHG is the desired fast-charge current
• KISET is a gain factor found in the electrical specifications
• RISET is the pulldown resistor from the ISET pin to GND
For charge currents below 50 mA, an extra RC circuit is recommended on ISET to achieve a more stable current
signal. For greater accuracy at lower currents, part of the current-sensing FET is disabled to give better
resolution.
7.3.1.2 VSET Pin Detection
VSET pin is used to program the device regulation voltage at end-of-charge using a ±1% pulldown resistor. The
available pulldown resistor and corresponding charging levels are:
表7-1. VSET Pin Resistor Value Table
RESISTOR
> 150 kΩ
100kΩ
CHARGE VOLTAGE (V)
No Charge (open-circuit)
1-cell LiFePO4: 3.50 V
1-cell LiFePO4: 3.60 V
1-cell LiFePO4: 3.70 V
1-cell LiIon: 4.05 V
82.5kΩ
61.9kΩ
47.5kΩ
35.7kΩ
27.4kΩ
24.3kΩ
18.2kΩ
< 3.0 kΩ
1-cell LiIon: 4.15 V
1-cell LiIon: 4.20 V
1-cell LiIon: 4.35 V
1-cell LiIon: 4.40 V
No Charge (short-circuit)
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If either a short- or open-circuit condition is detected, charger stops operation and remains in the FAULT state
until the input or BIAS pin is toggled.
Once a valid resistor value has been detected, the corresponding charge voltage is latched in and the pin is not
continuously monitored during operation. A change in this pin will not be acknowledged by the IC until the input
supply or BIAS pin is toggled.
7.3.1.3 Charger Power Up
After VSET, ISET pin resistor values have been validated, the device proceeds to enable the charger. The
device automatically begins operation at the correct stage of battery charging depending on the OUT voltage.
7.3.2 Battery Charging Features
When charge is enabled, the device automatically completes a charging cycle according to the setting on the
ISET pin without any intervention. The lithium-based charging cycle is automatically terminated when the
charging current is below termination threshold, charge voltage is above recharge threshold, and device is not in
VINDPM or in thermal regulation (TREG). When a full battery is discharged below the recharge threshold
(VRECHG), the device automatically starts a new charging cycle. After charge is done, toggling the input supply or
the BIAS pin can initiate a new charging cycle.
7.3.2.1 Lithium-Ion Battery Charging Profile
The device charges a lithium based battery in four phases: trickle charge, precharge, constant current, and
constant voltage. At the beginning of a charging cycle, the device checks the battery voltage and regulates
current and voltage accordingly.
If the charger is in thermal regulation during charging, the actual charging current is less than the programmed
value. In this case, termination is temporarily disabled.
Regulation Voltage
VSET
VRECHG
Battery Voltage
Charge Current
ISET
Charge Current
VBAT_LOWV
VBAT_SHORT
IPRECHG = ISET x 20%
ITERM = ISET x 10%
IBAT_SHORT
Trickle Charge
Pre-charge
Re-
charge
Fast-Charge
CC
Taper-Charge
CV
Charge
Done
图7-2. Battery Charging Profile
7.3.2.2 Input Voltage Based Dynamic Power Management (VINDPM)
The VINDPM feature is used to detect an input source voltage that is reaching its current limit due to excessive
load and causing the voltage to reduce. When the input voltage drops to the VINDPM threshold (VIN_DPM), the
internal pass FET reduces the current until there is no further drop in voltage at the input. This prevents a source
with voltage less than the VIN_DPM to power the OUT pin. This unique feature makes the IC work well with
current limited (for example, high impedance) power sources, such as solar panels or inductive charging pads.
This is also an added safety feature that helps protect the source from excessive loads.
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The BQ25176M solar charger features the battery tracking VINDPM. VIN_DPM tracks the battery voltage (OUT pin
voltage), which is typically VOUT+145mV. The minimum VIN_DPM is 3.25V. It enables charging from the solar
panel when the battery voltage is low and maintains the charging as the battery voltage increases even when
the charge current is low.
7.3.2.3 Charge Termination and Battery Recharge
The device terminates a charge cycle when the OUT pin voltage is above the recharge threshold (VRECHG) and
the current is below the termination threshold (ITERM). Termination is temporarily disabled when the charger
device is in thermal regulation or VINDPM. After charge termination is detected, the linear regulator turns off and
the device enters the Standby state. Once the OUT pin drops below the VRECHG threshold, a new charge cycle is
automatically initiated.
7.3.3 Status Outputs ( PG, STAT)
7.3.3.1 Power Good Indicator (PG Pin)
This open-drain pin pulls LOW to indicate a good input source when:
1. VIN above VIN_LOWV
2. VIN above VOUT + VSLEEPZ (not in SLEEP)
3. VIN below VIN_OV
7.3.3.2 Charging Status Indicator (STAT)
The device indicates the charging state on the open-drain STAT pin. This pin can drive an LED.
表7-2. STAT Pin State
CHARGING STATE
STAT PIN STATE
HIGH
Charge completed, charger in Sleep mode or charge disabled (VBIAS
< VBIAS_ENZ
)
Charge in progress (including automatic recharge)
LOW
Fault (VIN_OV, VOUT_OVP, IOUT_OCP, TSHUT, VSET pin short/
open, or ISET pin short)
BLINK at 1Hz
7.3.4 Protection Features
The device closely monitors input and output voltages, as well as internal FET current and temperature for safe
linear regulator operation.
7.3.4.1 Input Overvoltage Protection (VIN_OV)
If the voltage at the IN pin exceeds VIN_OV, the device turns off after a deglitch, tVIN_OV_DGL. The device enters
Standby mode. Once the IN voltage recovers to a normal level, the charge cycle automatically resumes
operation.
7.3.4.2 Output Overvoltage Protection (VOUT_OVP)
If the voltage at the OUT pin exceeds VOUT_OVP, the device immediately stops charging.The device enters
Standby mode. Once the OUT voltage recovers to a normal level, the charge cycle automatically resumes
operation.
7.3.4.3 Output Overcurrent Protection (IOUT_OCP)
During normal operation, the OUT current should be regulated to the ISET programmed value. However, if a
short circuit occurs on the ISET pin, the OUT current may rise to an unintended level. If the current at the OUT
pin exceeds IOUT_OCP, the device turns off after a deglitch, tOUT_OCP_DGL. An input supply or BIAS pin toggle is
required to restart operation.
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IOUT_OCP
ICHG
tOUT_OCP_DGL
RISET
Short Circuit
event on ISET
Charger
latched off
图7-3. Overcurrent Protection
7.3.4.4 Thermal Regulation and Thermal Shutdown (TREG and TSHUT)
The device monitors its internal junction temperature (TJ) to avoid overheating and to limit the IC surface
temperature. When the internal junction temperature exceeds the thermal regulation limit, the device
automatically reduces the charge current to maintain the junction temperature at the thermal regulation limit
(TREG). During thermal regulation, the actual charging current is usually below the programmed value on the
ISET pin.
Therefore, the termination comparator for the Lithium-Ion battery is disabled.
Additionally, the device has thermal shutdown to turn off the linear regulator when the IC junction temperature
exceeds the TSHUT threshold. The charger resumes operation when the IC die temperature decreases below
the TSHUT falling threshold.
7.4 Device Functional Modes
7.4.1 Shutdown or Undervoltage Lockout (UVLO)
The device is in the shutdown state if the IN pin voltage is less than VIN_LOWV or the BIAS pin is below VBIAS_ENZ
.
The internal circuitry is powered down, all the pins are high impedance, and the device draws ISD_IN_BIAS from
the input supply. Once the IN voltage rises above the VIN_LOW threshold and the BIAS pin is above VBIAS_EN, the
IC enters Sleep mode or Active mode depending on the OUT pin voltage.
7.4.2 Sleep Mode
The device is in Sleep mode when VIN_LOWV < VIN < VOUT + VSLEEPZ. The device waits for the input voltage to
rise above VOUT + VSLEEPZ to start operation.
7.4.3 Active Mode
The device is powered up and charges the battery when the BIAS pin is above VBIAS_ENZ and the IN voltage
ramps above both VIN_LOWV and VOUT + VSLEEPZ. The device draws IQ_IN from the supply to bias the internal
circuitry. For details on the device power-up sequence, refer to 节7.3.1.
7.4.3.1 Standby Mode
The device is in Standby mode if a valid input supply is present and charge is terminated or if a recoverable fault
is detected. The internal circuitry is partially biased, and the device continues to monitor for either VOUT to drop
below VRECHG or the recoverable fault to be removed.
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7.4.4 Fault Mode
The fault conditions are categorized into recoverable and nonrecoverable as follows:
• Recoverable, from which the device should automatically recover once the fault condition is removed:
– VIN_OV
– VOUT_OVP
– TSHUT
• Nonrecoverable, requiring BIAS pin or input supply toggle to resume operation:
– IOUT_OCP
– ISET pin short detected
– VSET pin short/open detected
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8 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
A typical application consists of the device configured as a standalone battery charger for single-cell Lithium-Ion,
Li-Polymer, or LiFePO4 chemistries. The charge voltage is configured using a pull-down resistor on the VSET
pin. The charge current is configured using a pull-down resistor on the ISET pin. Pulling the BIAS pin below
VBIAS_ENZ disables the charging function. The charger and input supply status is reported via the STAT and PG
pins.
8.2 Typical Applications
8.2.1 Li-Ion Charger Design Example
1s Li-Ion
4.35V
VIN: 3.0V ~ 18V
IN
OUT
1µF
1µF
10kΩ
24.3kꢀ
VSET
ISET
GND
STAT
/PG
10kΩ
604Ω
10kΩ
BIAS
BQ25176M
图8-1. BQ25176M Typical Application for Li-Ion Charging at 500 mA
8.2.1.1 Design Requirements
• Supply voltage = 5 V
• Battery is single-cell Li-Ion
• Fast charge current: ICHG = 500 mA
• Charge voltage: VREG = 4.35 V
• Termination current: ITERM = 10% of ICHG or 50 mA
• Precharge current: IPRECHG = 20% of ICHG or 100 mA
• BIAS pin can be pulled down to disable charging
8.2.1.2 Detailed Design Procedure
The regulation voltage is set via the VSET pin to 4.35 V, the input voltage is 5 V and the charge current is
programmed via the ISET pin to 500 mA.
RISET = [KISET / ICHG
]
from electrical characteristics table. . . KISET = 300 AΩ
RISET = [300 AΩ/0.5 A] = 600 Ω
Selecting the closest 1% resistor standard value, use a 604-Ω resistor between ISET and GND, for an expected
ICHG 497 mA.
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8.2.1.3 Application Curves
CIN = 1 µF, COUT = 1 µF, VIN = 5 V, VOUT = 3.8 V, ICHG = 600 mA (unless otherwise specified)
OUT = open-circuit
RISET = 500 Ω
RISET = 500 Ω
图8-2. Power Up With Battery
图8-3. Power Up Without Battery
BIAS pin pulled LOW
VIN = 5 V →0 V
图8-5. Charge Disable
图8-4. Power Down
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BIAS pin pull-low released
VOUT = VSET = 4.2 V
RISET = 0.5 kΩ ISYS = 0 mA →250 mA
图8-6. Charge Enable
图8-7. OUT Transient Response
RISET = 0.5 kΩ VOUT = 4.0 V →0 V
RISET = 500 Ω→0 Ω
图8-8. OUT Short-Circuit Response
图8-9. ISET Short-Circuit Response
VSET = 4.2V Input source Ilimit = 25 mA
RISET = 1.5
VSET = 3.6V
Input source Ilimit = 25 mA
RISET = 1.5 kΩ
kΩ
图8-10. Battary tracking VINDPM (Li-Ion)
图8-11. Battary tracking VINDPM (LiFePO4)
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8.2.2 LiFePO4 Charger Design Example
1s LiFePO4
3.6V
VIN: 3.0V ~ 18V
IN
OUT
System
Load
1µF
1µF
10kΩ
82.5kꢀ
VSET
ISET
GND
STAT
/PG
10kΩ
3.01kΩ
10kꢀ
BIAS
BQ25176M
图8-12. BQ25176M Typical Application for LiFePO4 Charging at 100 mA
8.2.2.1 Design Requirements
The design requirements include the following:
• Input supply = 5 V
• Battery is 1-cell LiFePO4
• Fast charge current: ICHG = 100 mA
• Charge voltage: VREG = 3.6 V
• Termination current: ITERM = 10% of ICHG or 10 mA
• Precharge current: IPRECHG = 20% of ICHG or 20 mA
• BIAS pin can be pulled down to disable charging
8.2.2.2 Detailed Design Procedure
The regulation voltage is set via the VSET pin to 3.6 V, the input voltage is 5 V and the charge current is
programmed via the ISET pin to 100 mA.
RISET = [KISET / ICHG
]
from electrical characteristics table. . . KISET = 300 AΩ
RISET = [300 AΩ/0.1 A] = 3 kΩ
Selecting the closest 1% resistor standard value, use a 3.01-kΩ resistor between ISET and GND, for an
expected ICHG 99.67 mA.
8.2.2.3 Application Curves
For application curves, see 节8.2.1.3.
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9 Power Supply Recommendations
The device is designed to operate from an input voltage supply range between 3.0 V and 18 V (up to 30 V
tolerant) and current capability of at least the maximum designed charge current. If located more than a few
inches from the IN and GND pins, a larger capacitor is recommended.
10 Layout
10.1 Layout Guidelines
To obtain optimal performance, the decoupling capacitor from the IN pin to the GND pin and the output filter
capacitor from the OUT pin to the GND pin should be placed as close as possible to the device, with short trace
runs to both IN, OUT, and GND.
• All low-current GND connections should be kept separate from the high-current charge or discharge paths
from the battery. Use a single-point ground technique incorporating both the small signal ground path and the
power ground path.
• The high current charge paths into the IN pin and from the OUT pin must be sized appropriately for the
maximum charge current in order to avoid voltage drops in these traces.
To achieve correct pin detection, the ISET pin and VSET pin resistors should be placed as close as possible to
the device, with short trace runs to both ISET, VSET, and GND.
10.2 Layout Example
IN
GND
OUT
VREF
IN
OUT
VSET
/PG
0402
/PG
0402
STAT
ISET
BIAS
GND
0402
VSET
GND
STAT
0402
图10-1. Board Layout Example
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11 Device and Documentation Support
11.1 Device Support
11.1.1 第三方产品免责声明
TI 发布的与第三方产品或服务有关的信息,不能构成与此类产品或服务或保修的适用性有关的认可,不能构成此
类产品或服务单独或与任何TI 产品或服务一起的表示或认可。
11.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
11.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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12-Apr-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ25176MDSGR
ACTIVE
WSON
DSG
8
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
176M
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
GENERIC PACKAGE VIEW
DSG 8
2 x 2, 0.5 mm pitch
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224783/A
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PACKAGE OUTLINE
DSG0008A
WSON - 0.8 mm max height
SCALE 5.500
PLASTIC SMALL OUTLINE - NO LEAD
2.1
1.9
B
A
0.32
0.18
PIN 1 INDEX AREA
2.1
1.9
0.4
0.2
ALTERNATIVE TERMINAL SHAPE
TYPICAL
0.8
0.7
C
SEATING PLANE
0.05
0.00
SIDE WALL
0.08 C
METAL THICKNESS
DIM A
OPTION 1
0.1
OPTION 2
0.2
EXPOSED
THERMAL PAD
(DIM A) TYP
0.9 0.1
5
4
6X 0.5
2X
1.5
9
1.6 0.1
8
1
0.32
0.18
PIN 1 ID
(45 X 0.25)
8X
0.4
0.2
8X
0.1
C A B
C
0.05
4218900/E 08/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
DSG0008A
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
(0.9)
(
0.2) VIA
8X (0.5)
TYP
1
8
8X (0.25)
(0.55)
SYMM
9
(1.6)
6X (0.5)
5
4
SYMM
(1.9)
(R0.05) TYP
LAND PATTERN EXAMPLE
SCALE:20X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4218900/E 08/2022
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
DSG0008A
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
8X (0.5)
METAL
8
SYMM
1
8X (0.25)
(0.45)
SYMM
9
(0.7)
6X (0.5)
5
4
(R0.05) TYP
(0.9)
(1.9)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 9:
87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:25X
4218900/E 08/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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