CSD23201W10_16 [TI]
P-Channel NexFET Power MOSFET;
| 型号： | CSD23201W10_16 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | P-Channel NexFET Power MOSFET |
| 文件： | 总8页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CSD23201W10
www.ti.com
SLPS209A –AUGUST 2009–REVISED MAY 2010
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD23201W10
1
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
•
•
Ultra Low Qg and Qgd
Small Footprint 1mm × 1mm
Low Profile 0.62mm Height
Pb Free
VDS
Qg
Drain to Source Voltage
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
–12
1.8
V
nC
nC
mΩ
mΩ
mΩ
V
Qgd
0.26
VGS = –1.5V
110
77
RDS(on) Drain to Source On Resistance
VGS = –2.5V
VGS = –4.5V
Gate ESD Protection – 3kV
RoHS Compliant
66
VGS(th)
Threshold Voltage
–0.6
Halogen Free
ORDERING INFORMATION
APPLICATIONS
Device
Package
Media
Qty
Ship
•
•
•
Battery Management
Load Switch
Battery Protection
1 × 1 Wafer Level
Package
Tape and
Reel
CSD23201W10
7-inch reel
3000
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
TA = 25°C unless otherwise stated
VALUE
–12
–6
UNIT
V
VDS
VGS
ID
Drain to Source Voltage
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Gate to Source Voltage
V
Continuous Drain Current, TC = 25°C(1)
Pulsed Drain Current, TA = 25°C(2)
Continuous Gate Clamp Current
Pulsed Gate Clamp Current
Power Dissipation(1)
–2.2
–8.8
–0.5
–7
A
IDM
A
A
IG
Top View
A
PD
TJ,
1
W
Operating Junction and Storage
TSTG Temperature Range
D
D
–55 to 150
°C
(1) RqJA = 100°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%
G
S
P0097-01
RDS(ON) vs VGS
Gate Charge
200
180
160
140
120
100
80
4.5
I
V
= −0.5A
I
D
= −0.5A
D
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
= −6V
DS
T
= 125°C
C
60
40
T
= 25°C
C
20
0
0
1
2
3
4
5
6
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
−V − Gate to Source Voltage − V
GS
Q − Gate Charge − nC
g
G006
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
CSD23201W10
SLPS209A –AUGUST 2009–REVISED MAY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
TEST CONDITIONS
MIN
TYP
MAX UNIT
BVDSS
BVGSS
IDSS
Drain to Source Voltage
VGS = 0V, ID = –250mA
–12
V
Gate to Source Voltage;
VDS = 0V, IG = –250mA
VGS = 0V, VDS = –9.6V
VDS = 0V, VGS = –6V
–6.1
–7.2
–1
V
mA
nA
V
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
IGSS
–100
–1.0
138
96
VGS(th)
VDS = VGS, ID = –250mA
VGS = –1.5V, ID = –0.5A
VGS = –2.5V, ID = –0.5A
VGS = –4.5V, ID = –0.5A
VDS = –6.0V, ID = –0.5A
–0.4
–0.6
110
77
mΩ
mΩ
mΩ
S
RDS(on)
Drain to Source On Resistance
Transconductance
66
82
gfs
9
Dynamic Characteristics
CISS
COSS
CRSS
Qg
Input Capacitance
250
125
32
325
155
42
pF
pF
pF
nC
nC
nC
nC
nC
ns
Output Capacitance
Reverse Transfer Capacitance
Gate Charge Total (–4.5V)
Gate Charge Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
Output Charge
VGS = 0V, VDS = –6.0V, f = 1MHz
1.8
0.26
0.28
0.11
1.7
24
2.4
Qgd
Qgs
Qg(th)
QOSS
td(on)
tr
VDS = –6.0V, ID = –0.5A
VDS = –6.0V, VGS = 0V
Turn On Delay Time
Rise Time
19
ns
VDS = –6.0V, VGS = –2.5V, ID = –0.5A
RG = 20Ω
td(off)
tf
Turn Off Delay Time
Fall Time
68
ns
29
ns
Diode Characteristics
VSD
Qrr
trr
Diode Forward Voltage
IS = –0.5A, VGS = 0V
–0.77
2
–1.0
V
Reverse Recovery Charge
Reverse Recovery Time
Vdd= –4.0V, IF = –0.5A, di/dt = 100A/ms
Vdd= –4.0V, IF = –0.5A, di/dt = 100A/ms
nC
ns
9.5
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX UNIT
245 °C/W
125 °C/W
R qJC
R qJA
Thermal Resistance Junction to Ambient (Minimum Cu area)
Thermal Resistance Junction to Ambient (1 in2 Cu area)
2
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD23201W10
CSD23201W10
www.ti.com
SLPS209A –AUGUST 2009–REVISED MAY 2010
P-Chan 1.0x1.0 CSP TTA MAX Rev1
P-Chan 1.0x1.0 CSP TTA MIN Rev1
Max RqJA = 245°C/W
when mounted on
minimum pad area of 2
oz. Cu.
Max RqJA = 125°C/W
when mounted on
1inch2 of 2 oz. Cu.
M0149-01
M0150-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
10
1
0.5
0.3
0.1
0.1
0.05
Duty Cycle = t1/t2
P
0.02
0.01
0.01
0.001
0.0001
t1
t2
R
qJA = 195°C/W (min Cu)
Single Pulse
TJ = P x ZqJA x RqJA
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1k
tp – Pulse Duration–s
G012
Figure 1. Transient Thermal Impedance
Copyright © 2009–2010, Texas Instruments Incorporated
Submit Documentation Feedback
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Product Folder Link(s): CSD23201W10
CSD23201W10
SLPS209A –AUGUST 2009–REVISED MAY 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
5
4
5
4
3
2
1
0
V
DS
= −5V
V
= −1.5V
GS
V
= −4.5V
GS
T
= 125°C
C
3
2
1
0
V
GS
= −3V
T
= 25°C
C
V
= −2.5V
GS
V
GS
= −1.2V
T
= −55°C
C
0.0
0.3
0.6
0.9
1.2
1.5
0.50
0.75
1.00
1.25
1.50
1.75
2.00
−V − Drain to Source Voltage − V
DS
−V − Gate to Source Voltage − V
GS
G001
G002
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
250
200
150
100
50
I
V
= −0.5A
f = 1MHz, V = 0V
D
GS
= −6V
DS
C
OSS
= C + C
DS GD
C
ISS
= C
+ C
GS
GD
C
RSS
= C
GD
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0
2
4
6
8
10
12
Q
− Gate Charge − nC
−V − Drain to Source Voltage − V
DS
g
G003
G004
Figure 4. Gate Charge
Figure 5. Capacitance
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
200
180
160
140
120
100
80
I
D
= −250µA
I
D
= −0.5A
T
= 125°C
C
60
40
T
= 25°C
C
20
0
−75
−25
25
75
125
175
0
1
2
3
4
5
6
T
− Case Temperature − °C
−V − Gate to Source Voltage − V
GS
C
G005
G006
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On Resistance vs. Gate Voltage
4
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD23201W10
CSD23201W10
www.ti.com
SLPS209A –AUGUST 2009–REVISED MAY 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
10
1
1.6
I
V
= −0.5A
D
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= −4.5V
GS
T
= 125°C
C
0.1
T
= 25°C
C
0.01
0.001
0.0001
−75
−25
25
75
125
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
− Case Temperature − °C
−V − Source to Drain Voltage − V
SD
C
G007
G008
Figure 8. On Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
3.0
2.5
100
10
2.0
1.5
1.0
100ms
1
100ms
Area Limited
10ms
1s
0.1
0.01
by R
DS(on)
0.5
0.0
DC
Single Pulse
R
θJA = 195°C/W (min Cu)
−50 −25
0
25
50
75
100 125 150 175
0.1
1
10
100
T
− Case Temperature − °C
−V − Drain To Source Voltage − V
DS
C
G011
G009
Figure 10. Maximum Safe Operating Area
Figure 11. Maximum Drain Current vs. Temperature
Copyright © 2009–2010, Texas Instruments Incorporated
Submit Documentation Feedback
5
Product Folder Link(s): CSD23201W10
CSD23201W10
SLPS209A –AUGUST 2009–REVISED MAY 2010
www.ti.com
MECHANICAL DATA
CSD23201W10 Package Dimensions
Pin 1
Mark
Solder Ball
Ø 0.31 0.0ꢀ5
1
2
2
1
A
B
A
B
+0.00
–0.10
1.00
0.62 Max
0.50
Bottom View
Top View
Side View
Seating Plate
Front View
NOTE: All dimensions are in mm (unless otherwise specified)
M0151-01
Pin Configuration Table
POSITION
B1
DESIGNATION
Source
A1
Gate
A2, B2
Drain
6
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD23201W10
CSD23201W10
www.ti.com
SLPS209A –AUGUST 2009–REVISED MAY 2010
Land Pattern Recommendation
Ø 0.25
1
2
A
B
0.50
M0152-01
NOTE: All dimensions are in mm (unless otherwise specified)
Tape and Reel Information
4.00 0.10
2.00 0.0ꢀ
Ø 1.ꢀ0 0.10
ꢀ° Max
4.00 0.10
Ø 0.ꢀ0 0.0ꢀ
0.78 0.0ꢀ
0.2ꢀ4 0.02
ꢀ° Max
1.18 0.0ꢀ
M01ꢀ3-01
NOTE: All dimensions are in mm (unless otherwise specified)
REVISION HISTORY
Changes from Original (August 2009) to Revision A
Page
•
Deleted the Package Marking Information section ............................................................................................................... 7
Copyright © 2009–2010, Texas Instruments Incorporated
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7
Product Folder Link(s): CSD23201W10
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