SN75372DRE4 [TI]
0.5A 2 CHANNEL, NAND GATE BASED MOSFET DRIVER, PDSO8, GREEN, PLASTIC, SOIC-8;
| 型号： | SN75372DRE4 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 0.5A 2 CHANNEL, NAND GATE BASED MOSFET DRIVER, PDSO8, GREEN, PLASTIC, SOIC-8 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总19页 (文件大小：730K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SLLS025A − JULY 1986
• Dual Circuits Capable of Driving
D OR P PACKAGE
(TOP VIEW)
High-Capacitance Loads at High Speeds
• Output Supply Voltage Range up to 24 V
• Low Standby Power Dissipation
1A
E
V
CC1
1Y
2Y
1
2
3
4
8
7
6
5
2A
description
GND
V
CC2
The SN75372 is a dual NAND gate interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides high current and voltage
levels necessary to drive large capacitive loads at
†
logic symbol
2
E
EN
high speeds. The device operates from a V
of
CC1
1
5 V and a V
of up to 24 V.
TTL/MOS
7
6
CC2
1A
1Y
2Y
3
The SN75372 is characterized for operation from
0°C to 70°C.
2A
†
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
schematic (each driver)
V
CC1
V
CC2
To Other
Driver
Input A
Output Y
Enable E
GND
To Other
Driver
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Copyright 1986, Texas Instruments Incorporated
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Revision Information
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3−1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
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SLLS025A − JULY 1986
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
Supply voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 25 V
CC1
CC2
Input voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
I
Peak output current, V (t < 10 ms, duty cycle < 50%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
O
w
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to network GND.
DISSIPATION RATING TABLE
= 25°C DERATING FACTOR
T
T = 70°C
A
POWER RATING
A
PACKAGE
POWER RATING
ABOVE T = 25°C
A
D
P
725 mW
5.8 mW/°C
8.0 mW/°C
464 mW
1000 mW
640 mW
recommended operating conditions
MIN NOM
MAX
5.25
24
UNIT
V
Supply voltage, V
Supply voltage, V
4.75
5
CC1
4.75
2
20
V
CC2
High-level input voltage, V
IH
V
Low-level input voltage, V
IL
0.8
−10
40
V
High-level output current, I
mA
mA
°C
OH
OL
Low-level output current, I
Operating free-air temperature, T
0
70
A
3−2
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POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
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SLLS025A − JULY 1986
electrical characteristics over recommended ranges of V
temperature (unless otherwise noted)
, V
, and operating free-air
CC1
CC2
†
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
V
Input clamp voltage
I = −12 mA
−1.5
V
IK
I
V
= 0.8 V,
= 0.8 V,
= 2 V,
I
I
I
= −50 µA
= −10 mA
= 10 mA
= 2 V,
V
V
−1.3
V
V
−0.8
−1.8
IL
IL
IH
OH
OH
OL
CC2
CC2
High-level output voltage
V
V
OH
V
V
V
−2.5
CC2
CC2
0.15
0.3
0.5
1.5
1
V
V
Low-level output voltage
= 15 V to 24 V,
V
IH
OL
CC2
= 40 mA
0.25
I
OL
V = 0,
Output clamp-diode forward voltage
I
F
= 20 mA
V
F
I
Input current at maximum input
voltage
I
I
V = 5.5 V
I
mA
Any A
40
80
I
High-level input current
Low-level input current
V = 2.4 V
µA
IH
I
Any E
Any A
Any E
−1
−2
−1.6
−3.2
I
I
I
I
I
I
V = 0.4 V
I
mA
mA
mA
mA
mA
mA
IL
Supply current from V
outputs high
, both
, both
, both
, both
CC1
CC2
CC1
CC2
CC2
2
4
0.5
24
CC1(H)
CC2(H)
CC1(L)
CC2(L)
CC2(S)
V
= 5.25 V,
V
= 24 V,
CC1
All inputs at 0 V,
CC2
No load
Supply current from V
outputs high
Supply current from V
outputs low
16
7
V
= 5.25 V,
V
= 24 V,
CC1
All inputs at 5 V,
CC2
No load
Supply current from V
outputs low
13
Supply current from V
condition
, standby
V
= 0,
V
= 24 V,
CC1
All inputs at 5 V,
CC2
No load
0.5
†
All typical values are at V
CC1
= 5 V, V = 20 V, and T = 25°C.
CC2 A
switching characteristics, V
= 5 V, V
= 20 V, T = 25°C
CC1
CC2
A
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
35
UNIT
ns
t
t
t
t
t
t
Delay time, low-to-high-level output
Delay time, high-to-low-level output
20
10
20
20
40
30
DLH
DHL
TLH
THL
PLH
PHL
20
ns
Transition time, low-to-high-level output
30
ns
C
= 390 pF,
R
= 10 Ω,
D
See Figure 1
L
Transition time, high-to-low-level output
30
ns
Propagation delay time, low-to-high-level output
Propagation delay time, high-to-low-level output
10
10
65
ns
50
ns
3−3
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SLLS025A − JULY 1986
PARAMETER MEASUREMENT INFORMATION
≤ 10 ns
≤ 10 ns
3 V
5 V
20 V
Input
90%
1.5 V
90%
1.5 V
10%
10%
DHL
0 V
V
CC1
V
CC2
0.5 µs
Input
t
t
PHL
PHL
Pulse
Generator
(see Note A)
R
t
t
D
TLH
Output
t
THL
C
= 390 pF
(see Note B)
L
V
OH
−3 V
t
DLH
GND
V
V
CC2
−3 V
CC2
Output
2.4 V
2 V
2 V
V
OL
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, Z ≈ 50 Ω.
O
B.
C includes probe and jig capacitance.
L
Figure 1. Test Circuit and Voltage Waveforms, Each Driver
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT CURRENT
V
0.5
0.4
0.3
CC2
V
V
= 5 V
= 20 V
V
V
= 5 V
= 20 V
CC1
CC2
CC1
CC2
V = 2 V
I
V = 0.8 V
I
V
−0.5
CC2
T
A
= 70°C
V
−1
CC2
T
A
= 25°C
T
= 70°C
= 0°C
A
T
= 0°C
A
V
−1.5
CC2
0.2
0.1
0
V
−2
CC2
T
A
V
−2.5
CC2
V
−3
− 0.01
CC2
−1
−10
−100
− 0.1
0
20
40
60
80
100
I
− High-Level Output Current − mA
I
− Low-Level Output Current − mA
OH
OL
Figure 2
Figure 3
3−4
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SLLS025A − JULY 1986
TYPICAL CHARACTERISTICS
POWER DISSIPATION (BOTH DRIVERS)
vs
VOLTAGE TRANSFER CHARACTERISTICS
FREQUENCY
1200
1000
800
24
20
16
12
8
V
V
= 5 V
V
V
= 5 V
= 20 V
CC1
CC1
CC2
= 20 V
CC2
No Load
T
A
Input: 3-V Square Wave
50% Duty Cycle
= 25°C
T
A
= 25°C
C
= 600 pF
L
C
= 1000 pF
L
600
400
C
= 2000 pF
L
C
= 4000 pF
L
200
0
4
C
= 400 pF
L
Allowable in P Package Only
0
0
0.5
1
1.5
2
2.5
10
20
40 100 200
400
1000
f − Frequency − kHz
V − Input Voltage − V
I
Figure 4
Figure 5
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
200
180
160
140
200
180
160
140
V
V
R
= 5 V
= 20 V
= 10 Ω
CC1
CC2
D
C
= 4000 pF
L
See Figure 1
C
= 4000 pF
L
V
V
R
= 5 V
= 20 V
= 10 Ω
CC1
CC2
D
120
100
120
100
See Figure 1
C
= 2000 pF
L
C
C
C
= 2000 pF
= 1000 pF
= 390 pF
L
L
L
80
80
C
C
= 1000 pF
= 390 pF
L
L
60
40
20
0
60
40
20
0
C
= 200 pF
C = 200 pF
L
L
C
= 50 pF
L
C
= 50 pF
60
L
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
70
80
T
A
− Free-Air Temperature − °C
T
A
− Free-Air Temperature − °C
Figure 6
Figure 7
3−5
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SLLS025A − JULY 1986
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
V
SUPPLY VOLTAGE
V
SUPPLY VOLTAGE
CC2
CC2
200
200
180
160
140
V
R
= 5 V
= 10 Ω
= 25°C
CC1
D
V
R
= 5 V
= 10 Ω
= 25°C
CC1
D
180
160
140
C
= 4000 pF
L
T
A
T
A
See Figure 1
See Figure 1
C
= 4000 pF
L
120
100
120
100
C
= 2000 pF
L
C
= 2000 pF
L
80
80
C
= 1000 pF
= 390 pF
L
C = 1000 pF
L
60
40
20
0
60
40
20
0
C
= 200 pF
C
L
L
C = 390 pF
L
C
= 200 pF
L
C
= 50 pF
20
C
= 50 pF
20
L
L
0
5
10
15
25
0
5
10
15
25
V
CC2
− Supply Voltage − V
V
CC2
− Supply Voltage − V
Figure 8
Figure 9
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
200
200
180
160
140
V
V
= 5 V
= 20 V
= 25°C
V
V
= 5 V
= 20 V
= 25°C
CC1
CC2
CC1
CC2
180
160
140
T
T
A
A
See Figure 1
See Figure 1
R
= 24 Ω
R = 24 Ω
D
D
R
= 10 Ω
120
100
120
100
D
R
= 10 Ω
D
80
80
R
= 0
D
60
40
20
0
60
40
R
= 0
D
20
0
0
1000
2000
3000
4000
0
1000
2000
3000
4000
C
− Load Capacitance − pF
C − Load Capacitance − pF
L
L
Figure 10
Figure 11
NOTE: For R = 0, operation with C > 2000 pF violates absolute maximum current rating.
D
L
3−6
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SLLS025A − JULY 1986
THERMAL INFORMATION
power dissipation precautions
Significant power may be dissipated in the SN75372 driver when charging and discharging high-capacitance
loads over a wide voltage range at high frequencies. Figure 5 shows the power dissipated in a typical SN75372
as a function of load capacitance and frequency. Average power dissipated by this driver is derived from the
equation
P
= P
+ P
= P
T(AV)
DC(AV)
C(AV) S(AV)
where P
is the steady-state power dissipation with the output high or low, P
is the power level during
DC(AV)
C(AV)
charging or discharging of the load capacitance, and P
is the power dissipation during switching between
S(AV)
the low and high levels. None of these include energy transferred to the load, and all are averaged over a full
cycle.
The power components per driver channel are
t
HL
t
LH
P
t
+ P t
L L
H H
P
P
=
DC(AV)
T
2
C
[ C V
f
C(AV)
t
H
P
t
+ P
t
t
LH LH
HL HL
L
P
S(AV)
=
T
T = 1/f
where the times are as defined in Figure 14.
Figure 12. Output Voltage Waveform
P , P , P , and P are the respective instantaneous levels of power dissipation, C is the load capacitance.
L
H
LH
HL
V is the voltage across the load capacitance during the charge cycle shown by the equation
C
V = V
− V
OL
C
OH
P
may be ignored for power calculations at low frequencies.
S(AV)
In the following power calculation, both channels are operating under identical conditions:
=19.2 V and V = 0.15 V with V = 5 V, V = 20 V, V = 19.05 V, C = 1000 pF, and the
V
OH
OL
CC1
CC2
C
duty cycle = 60%. At 0.5 MHz, P
is negligible and can be ignored.
is negligible and can be ignored. When the output voltage is high, I
S(AV)
CC2
On a per-channel basis using data sheet values,
0 mA
2
16 mA
2
2 mA
7 mA
+ (5 V) ǒ Ǔ ) (20 V) ǒ Ǔ (0.6) ) (5 V) ǒ
Ǔ ) (20 V) ǒ Ǔ
ƫ(0.4)
2
ƪ
ƫ
ƪ
P
DC(AV)
2
P
= 47 mW per channel
DC(AV)
Power during the charging time of the load capacitance is
2
P
= (1000 pF) (19.05 V) (0.5 MHz) = 182 mW per channel
C(AV)
Total power for each driver is
= 47 mW + 182 mW = 229 mW
P
T(AV)
and total package power is
= (229) (2) = 458 mW.
P
T(AV)
3−7
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SLLS025A − JULY 1986
APPLICATION INFORMATION
driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The
input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance
in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup
resistor is not satisfactory for high-speed applications. In Figure 12(a), an IRF151 power MOSFET switching
an inductive load is driven by an open-collector transistor driver with a 470-Ω pullup resistor. The input
capacitance (C ) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the
iss
combination of C and the pullup resistor is shown in Figure 12(b).
iss
48 V
M
5 V
4
3
470 Ω
4
8
1
7
6
1/2 SN75447
2
1
0
IRF151
3
5
TLC555P
0
0.5
1
1.5
2
2.5
3
2
t − Time − µs
(b)
(a)
Figure 13. Power MOSFET Drive Using SN75447
3−8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
ꢀ ꢁꢂ ꢃꢄ ꢂꢅ
ꢆꢇꢈ ꢉꢊꢋ ꢌ ꢀꢍ ꢎꢏꢊ ꢆ ꢐꢑ ꢒ ꢎꢐ
ꢓ
ꢓ
SLLS025A − JULY 1986
APPLICATION INFORMATION
A faster, more efficient drive circuit uses an active pullup as well as an active pulldown output configuration,
referred to as a totem-pole output. The SN75372 driver provides the high speed, totem-pole drive desired in
an application of this type, see Figure 13(a). The resulting faster switching speeds are shown in Figure 13(b).
48 V
5 V
M
4
4
8
3
2
1
0
7
6
3
5
TLC555P
IRF151
1/2 SN75372
2
1
0
0.5
1
1.5
2
2.5
3
t − Time − µs
(b)
(a)
Figure 14. Power MOSFET Drive Using SN75372
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation
VC
I
+
pk
t
r
where C is the capacitive load, and t is the desired drive time. V is the voltage that the capacitance is charged
r
to. In the circuit shown in Figure 13(a), V is found by the equation
V = V
− V
OL
OH
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 13(a) is
*9
(3 * 0)4(10
)
I
+
+ 120 mA
PK
*9
100(10
)
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a V of 5 V, and assuming worst-cast conditions, the gate drive voltage is 3 V.
CC
For applications in which the full voltage of V
MOSFET driver should be used.
must be supplied to the MOSFET gate, the SN75374 quad
CC2
3−9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
PACKAGE OPTION ADDENDUM
www.ti.com
19-Jun-2010
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
SN75372D
SN75372DG4
SN75372DR
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
SOIC
SOIC
PDIP
PDIP
SO
D
D
8
8
8
8
8
8
8
8
8
8
75
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Purchase Samples
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
Purchase Samples
D
2500
2500
2500
50
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
SN75372DRE4
SN75372DRG4
SN75372P
D
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
D
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
P
Pb-Free (RoHS)
Contact TI Distributor
or Sales Office
SN75372PE4
SN75372PSR
SN75372PSRE4
SN75372PSRG4
P
50
Pb-Free (RoHS)
Contact TI Distributor
or Sales Office
PS
PS
PS
2000
2000
2000
Green (RoHS
& no Sb/Br)
Purchase Samples
Purchase Samples
Purchase Samples
SO
Green (RoHS
& no Sb/Br)
SO
Green (RoHS
& no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
19-Jun-2010
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
SN75372DR
SOIC
SO
D
8
8
2500
2000
330.0
330.0
12.4
16.4
6.4
8.2
5.2
6.6
2.1
2.5
8.0
12.0
16.0
Q1
Q1
SN75372PSR
PS
12.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
SN75372DR
SOIC
SO
D
8
8
2500
2000
340.5
367.0
338.1
367.0
20.6
38.0
SN75372PSR
PS
Pack Materials-Page 2
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