TLIN1039-Q1 [TI]
具有显性状态超时故障保护功能的局域互联网络 (LIN) 收发器;型号: | TLIN1039-Q1 |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有显性状态超时故障保护功能的局域互联网络 (LIN) 收发器 |
文件: | 总38页 (文件大小:2240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLIN1039-Q1
ZHCSOR2 –AUGUST 2021
具有显性状态超时的TLIN1039-Q1 本地互连网络(LIN) 收发器
1 特性
2 应用
• 符合面向汽车应用的AEC-Q100(1 级)标准
• 符合LIN 2.0、LIN 2.1、LIN 2.2、LIN 2.2A 和
ISO/DIS 17987–4 电气物理层(EPL) 规格标准
• 符合SAE J2602-1 面向汽车应用的LIN 网络标准
• 提供功能安全
• 车身电子装置和照明
• 信息娱乐系统与仪表组
• 混合动力电动汽车和动力总成系统
• 被动安全
• 电器
– 可帮助进行功能安全系统设计的文档
• 支持12V 应用
3 说明
TLIN1039-Q1 是一款本地互连网络 (LIN) 物理层收发
器,集成了唤醒和保护功能,符合 LIN 2.0、LIN 2.1、
LIN 2.2、LIN 2.2A 和 ISO/DIS 17987–4 标准。LIN
是一种单线双向总线,通常用于车载网络。TLIN1039-
Q1 旨在为12V 应用提供支持,具有更宽的工作电压范
围和额外的总线故障保护。
• 宽工作电源电压范围:4.5 V 至36V
• LIN 传输数据速率高达20kbps
• LIN 接收数据速率高达100kbps
• 休眠模式:超低电流消耗允许以下类型的唤醒事
件:
– LIN 总线
TLIN1039-Q1 变送器支持高达 20kbps 的数据速率。
TLIN1039-Q1 接收器支持高达 100kbps 的数据速率,
从而更快速地执行内联编程。TLIN1039-Q1 使用一个
可降低电磁辐射 (EME) 的限流波形整形驱动器将 TXD
输入上的数据流转化为 LIN 总线信号。接收器将数据
流转化为逻辑电平信号,此信号通过开漏 RXD 引脚发
送到微处理器。休眠模式可实现超低电流消耗,该模式
允许通过LIN 总线或EN 引脚实现唤醒。
– 通过EN 引脚的本地唤醒
• 集成45kΩLIN 上拉电阻器
• 在LIN 总线和RXD 输出上实现上电/断电无干扰运
行
• 保护特性:
– ±45V LIN 总线容错
– VSUP 欠压保护
– TXD 显性超时(DTO) 保护
– 热关断保护
器件信息
– 系统级未供电节点或接地断开失效防护
• 结温范围为-40°C 至150°C
• 采用小型SOT-23 封装
封装(1)
封装尺寸(标称值)
器件型号
TLIN1039-Q1
SOT-23 (8) (DDF)
2.90mm x 1.60mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
VBAT
VSUP
VBAT
VSUP
VREG
VSUP
VREG
VSUP
VDD
VDD
Commander
Node
Pullup
VDD
VDD
VSUP
VSUP
NC NC
EN
NC
8
NC
3
8
3
7
2
VDD
EN
I/O
I/O
2
7
VDD
MCU w/o
pullup
MCU w/o
pullup
VDD I/O
VDD I/O
1 kΩ
LIN Bus
LIN
LIN Bus
MCU
LIN
MCU
6
6
LIN Controller
or
SCI/UART
LIN Controller
Or
SCU/UART
1
4
1
4
220 pF
220 pF
RXD
TXD
RXD
TXD
GND
5
GND
5
简化版原理图,响应者模式
简化版原理图,指挥官模式
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLLSFH7
TLIN1039-Q1
ZHCSOR2 –AUGUST 2021
www.ti.com.cn
Table of Contents
9.1 Overview...................................................................20
9.2 Functional Block Diagram.........................................20
9.3 Feature Description...................................................21
9.4 Functional Modes......................................................24
10 Application and Implementation................................26
10.1 Application Information........................................... 26
10.2 Typical Application.................................................. 26
11 Power Supply Recommendations..............................27
12 Layout...........................................................................28
12.1 Layout Guidelines................................................... 28
12.2 Layout Example...................................................... 29
13 Device and Documentation Support..........................30
13.1 Related Documentation.......................................... 30
13.2 接收文档更新通知................................................... 30
13.3 支持资源..................................................................30
13.4 Trademarks.............................................................30
13.5 静电放电警告.......................................................... 30
13.6 术语表..................................................................... 31
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 说明(续).........................................................................3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 5
7.1 Absolute Maximum Ratings ....................................... 5
7.2 ESD Ratings .............................................................. 5
7.3 ESD Ratings - IEC Specification ................................5
7.4 Thermal Information ...................................................6
7.5 Recommended Operating Conditions ........................6
7.6 Power Supply Characteristics ....................................6
7.7 Electrical Characteristics ............................................7
7.8 AC Switching Characteristics ...................................10
7.9 Typical Characteristics.............................................. 11
8 Parameter Measurement Information..........................12
9 Detailed Description......................................................20
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
DATE
REVISION
NOTES
August 2021
*
Initial release.
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5 说明(续)
TLIN1039-Q1 集成了一个用于LIN 响应器节点应用、ESD 保护和故障保护的电阻器,可减少应用中的外部组件数
量。一旦发生接地漂移或电源电压断开,该器件可防止反馈电流经 LIN 流向电源输入。器件还包含欠压保护、过
热关断保护和接地失效保护功能。
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6 Pin Configuration and Functions
RXD
EN
1
2
3
4
8
7
6
5
NC
VSUP
LIN
NC
TXD
GND
Not to scale
图6-1. DDF Package, 8-Pin (SOT), Top View
表6-1. Pin Functions
DESCRIPTION
PIN
Type
Name
RXD
No.
1
DO
DI
RXD output (open-drain) interface reporting state of LIN bus voltage
Enable input - High puts the device in normal operation mode and low puts the device in sleep
mode; integrated pull-down
EN
2
NC
3
4
5
6
7
8
Not connected
–
DI
TXD
GND
LIN
TXD input interface to control state of LIN output; integrated pull-down
Ground
GND
HV I/O
LIN bus single-wire transmitter and receiver
VSUP
NC
HV Supply Device supply voltage (connected to battery in series with external reverse blocking diode)
Not connected
–
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7 Specifications
7.1 Absolute Maximum Ratings
(1) (2)
MIN
–0.3
–45
MAX
45
45
6
UNIT
V
VSUP
Supply voltage range (ISO 17987)
LIN Bus input voltage (ISO 17987)
Logic input voltage (TXD, EN)
Logic output voltage (RXD)
Digital pin output current
Junction Temp
VLIN
V
VLOGIC_INPUT
V
–0.3
–0.3
VLOGIC_OUTPUT
6
V
IO
8
mA
°C
°C
TJ
165
150
–55
Tstg
Storage temperature
-65
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) All voltage values are with respect to ground terminal.
7.2 ESD Ratings
VALUE
±8000
±10000
±4000
UNIT
Human body model (HBM) classification level 3B: VSUP with respect to ground
Human body model (HBM) classification level 3B: LIN with respect to ground
Human body model (HBM) classification level 3A: all other pins, per AEC Q100-002(1)
V
V
V
VESD Electrostatic discharge
VESD Electrostatic discharge
Charged device model (CDM) classification
All pins
±750
V
level C5, per AEC Q100-011
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 ESD Ratings - IEC Specification
VALUE
UNIT
IEC 62228-2 per ISO 10605
Contact discharge
R = 330 Ω, C = 150 pF (IEC 61000-4-2)
LIN, VSUP terminal to GND(1)
LIN terminal to GND(1)
±8000
±8000
-100
75
VESD Electrostatic discharge
V
IEC 62228-2 per ISO 10605
Indirect contact discharge
R = 330 Ω, C = 150 pF (IEC 61000-4-2)
IEC 62228-2 per IEC 62215-3
12 V electrical systems
Pulse 1
IEC 62228-2 per IEC 62215-3
12 V electrical systems
Pulse 2
Non-synchronous transient
LIN, VSUP terminal to GND(1)
injection
IEC 62228-2 per IEC 62215-3
12 V electrical systems
Pulse 3a
VTRAN
V
-150
IEC 62228-2 per IEC 62215-3
12 V electrical systems
Pulse 3b
150
±30
SAE J2962-1 per ISO 7637-3
DCC - Slow transient pulse
Direct capacitor coupling
LIN terminal to GND(2)
(1) Results given here are specific to the IEC 62228-2 Integrated circuits –EMC evaluation of transceivers –Part 2: LIN transceivers.
Testing performed by OEM approved independent 3rd party, EMC report available upon request.
(2) Results given here are specific to the SAE J2962-1 Communication Transceivers Qualification Requirements - LIN. Testing performed
by OEM approved independent 3rd party, EMC report available upon request.
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7.4 Thermal Information
TLIN1039-Q1
DDF(SOT)
8 PINS
125.3
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
64.3
45.8
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
2.8
ΨJT
45.5
ΨJB
RθJC(bot)
–
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Recommended Operating Conditions
parameters valid across -40℃≤TJ ≤150℃(unless otherwise noted)
MIN
4.5
0
NOM
MAX
36
UNIT
V
VSUP
VLIN
Supply Voltage
LIN Bus input voltage
36
V
VLOGIC
TJ
Logic Pin Voltage
0
5.25
150
V
Operating virtual junction temperature range
Thermal shutdown rising
Thermal shutdown falling
Thermal shutdown hysteresis
-40
160
°C
°C
°C
°C
TSDR
TSDF
TSD(HYS)
150
10
7.6 Power Supply Characteristics
parameters valid across -40℃≤TJ ≤150℃(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply Voltage and Current
Device is operational beyond the LIN
defined nominal supply voltage range
See 图8-1 and 图8-2
Operational supply voltage
ISO 17987 Param 10
4.5
36
V
VSUP
Normal and standby modes(1)
See 图8-1 and 图8-2
4.5
4.5
36
36
V
V
Nominal supply voltage
ISO 17987 Param 10
Sleep mode
Normal mode
EN = High, RLIN ≥500 Ω, CLIN ≤10 nF
1.2
1
6.5
mA
Supply current
Bus dominant
Standby mode
EN = 0 V, RLIN ≥500 Ω, CLIN ≤10 nF
1.7
700
30
mA
µA
µA
µA
µA
Normal mode
EN = High
300
20
9
Supply current
Bus recessive
ISUP
Standby mode
EN = 0 V
4.5 V < VSUP ≤14 V,
EN = 0 V, TXD and RXD floating
14
Supply current
Sleep mode
14 V < VSUP ≤36 V,
EN = 0 V, TXD and RXD floating
22
UVSUP(R)
UVSUP(F)
UVHYS
Under voltage VSUP threshold
Under voltage VSUP threshold
Ramp up
4.15
4
4.45
V
V
V
Ramp down
3.5
Delta hysteresis voltage for VSUP under voltage threshold
0.13
(1) Ramp VSUP while LIN signal is a 10 kHz square wave with 50% duty cycle and 36 V swing.
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7.7 Electrical Characteristics
parameters valid across -40℃≤TJ ≤150℃(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.6
5
UNIT
RXD Output Terminal
(4)
VOL
IOL
Low-level voltage
Based upon external pull-up to VCC
LIN = 0 V, RXD = 0.4 V
V
Low-level output current, open drain
Leakage current, high-level
1.5
mA
µA
ILKG
LIN = VSUP, RXD = VCC
–5
TXD Input Terminal
VIL
Low-level input voltage
0.8
V
V
VIH
High-level input voltage
2
–5
125
ILKG
RTXD
EN Input Terminal
Low-level input leakage current
TXD = 0 V
5
µA
Internal pull-down resistor value
350
800
kΩ
VIL
Low-level input voltage
0.8
5.25
500
5
V
V
–0.3
2
VIH
High-level input voltage
Hysteresis voltage
VHYS
By design and characterization
EN = 0 V
30
mV
µA
IIL
Low-level input current
Internal pull-down resistor
–5
125
REN
350
800
kΩ
LIN Terminal
TXD = VCC, IO = 0 mA
7 V ≤VSUP ≤36 V
VOH
VOH
VOH
VOL
VOL
VOL
LIN recessive high-level output voltage(3)
LIN recessive high-level output voltage(3)
LIN recessive high-level output voltage(1) (2)
LIN dominant low-level output voltage(3)
LIN dominant low-level output voltage(3)
LIN dominant low-level output voltage(1) (2)
0.85
3
VSUP
TXD = VCC, IO = 0 mA
4.5 V ≤VSUP < 7 V
V
TXD = VCC, IO = 0 mA
7 V ≤VSUP ≤18 V
0.8
VSUP
VSUP
V
TXD = 0 V
7 V ≤VSUP ≤36 V
0.2
1.2
0.2
TXD = 0 V
4.5 V ≤VSUP < 7 V
TXD = 0 V
7 V ≤VSUP ≤18 V
VSUP
LIN dominant (including LIN dominant for
wake up)
See 图8-3 and 图8-4
Low-level input voltage
ISO 17987 Param 17
VBUSdom
0.4
VSUP
LIN recessive
See 图8-3 and 图8-4
High-level input voltage
ISO 17987 Param 18
VBUSrec
VIH
0.6
0.47
VSUP
VSUP
VSUP
V
LIN recessive high-level input voltage threshold(1)
0.6
0.53
42
7 V ≤VSUP ≤18 V
7 V ≤VSUP ≤18 V
(2)
LIN dominant low-level input voltage threshold(1)
VIL
0.4
(2)
TXD & RXD open
4.5 V ≤LIN ≤45 V
VSUP_NON_OP
VBUS_CNT
VHYS
VSUP where impact of recessive LIN bus < 5%(3)
Receiver center threshold
–0.3
0.475
VBUS_CNT = (VBUSrec + VBUSdom)/2
See 图8-3 and 图8-4
0.5
0.525
0.175
VSUP
VHYS = VBUSrec - VBUSdom
See 图8-3 and 图8-4
Hysteresis voltage (ISO 17987)
VSUP
VHYS = VIH - VIL
See 图8-3 and 图8-4
VHYS
Hysteresis voltage (SAE J2602)
0.07
0.4
40
0.175
1.0
VSUP
V
VSERIAL_DIODE
IBUS(LIM)
Serial diode LIN termination pull-up path
ISERIAL_DIODE = 10 µA
0.7
90
Limiting current
ISO 17987 Param 12
TXD = 0 V, VLIN = 18 V
VSUP = 18 V
200
mA
Driver off/recessive, LIN = 0 V
VSUP = 12 V
See 图8-6
IBUS_PAS_dom
Receiver leakage current, dominant
Receiver leakage current, recessive
mA
µA
–1
Driver off/recessive, LIN ≥VSUP
4.5 V ≤VSUP ≤36 V
See 图8-7
IBUS_PAS_rec1
20
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7.7 Electrical Characteristics (continued)
parameters valid across -40℃≤TJ ≤150℃(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Driver off/recessive, LIN = VSUP
See 图8-7
IBUS_PAS_rec2
Receiver leakage current, recessive
5
µA
–5
GNDDevice = VSUP = 18 V
RMeas = 1 kΩ
IBUS_NO_GND
Leakage current, loss of ground
Leakage current, loss of ground (5)
1
1
mA
mA
–1
–1
0 V < VLIN < 18 V
VSUP = 8 V, GND = open, VSUP = 18 V, GND
= open
RCOMMANDER = 1 kΩ, CL = 1 nF
RRESPONDER = 20 kΩ, CL = 1 nF
LIN = dominant
Ileak gnd(dom)
VSUP = 8 V, GND = open, VSUP = 18 V, GND
= open
RCOMMANDER = 1 kΩ, CL = 1 nF
RRESPONDER = 20 kΩ, CL = 1 nF
LIN = recessive
Ileak gnd(rec)
Leakage current, loss of ground (5)
Leakage current, loss of supply
100
5
µA
–100
VSUP = GND
0 V ≤VLIN ≤18 V
IBUS_NO_BAT
µA
µA
IRSLEEP
RPU
Pull-up current source to VSUP sleep mode
Pull-up resistor to VSUP
VSUP = 14 V, LIN = GND
Normal and standby modes
VSUP = 14 V
–20
–1.5
60
20
45
kΩ
CLIN
Capacitance of the LIN pin
25
pF
Duty Cycle Characteristics
THREC(MAX) = 0.744 x VSUP
THDOM(MAX) = 0.581 x VSUP
VSUP = 7 V to 18 V, tBIT = 50 µs
Duty Cycle 1(3)
D1
0.396
0.396
0.396
ISO 17987 Param 27
D1 = tBUS_rec(min)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MAX) = 0.665 x VSUP
,
THDOM(MAX) = 0.499 x VSUP
VSUP = 4.5 V to 7 V, tBIT = 50 µs
D1
D1
D2
D2
D2
D3
D3
Duty Cycle 1 (3) (6)
D1 = tBUS_rec(min)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MAX) = 0.744 x VSUP
THDOM(MAX) = 0.581 x VSUP
VSUP = 7 V to 18 V, tBIT = 52 µs
,
,
Duty cycle 1(1) (2) (6)
D1 = tBUS_rec(min)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MIN) = 0.422 x VSUP
THDOM(MIN) = 0.284 x VSUP
VSUP = 7 V to 18 V, tBIT = 50 µs
Duty Cycle 2(3)
ISO 17987 Param 28
0.581
0.581
0.581
D2 = tBUS_rec(MAX)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MIN) = 0.496 x VSUP
THDOM(MIN) = 0.361 x VSUP
VSUP = 4.5 V to 7 V, tBIT = 50 µs
,
,
Duty cycle 2(3) (6)
D2 = tBUS_rec(MAX)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MIN) = 0.422 x VSUP
THDOM(MIN) = 0.284 x VSUP
VSUP = 7 V to 18 V, tBIT = 52 µs
,
,
Duty cycle 2(1) (2) (6)
D2 = tBUS_rec(MAX)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MAX) = 0.778 x VSUP
THDOM(MAX) = 0.616 x VSUP
VSUP = 7 V to 18 V, tBIT = 96 µs
Duty Cycle 3(3)
ISO 17987 Param 29
0.417
0.417
D3 = tBUS_rec(min)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MAX) = 0.665 x VSUP
THDOM(MAX) = 0.499 x VSUP
VSUP = 4.5 V to 7 V, tBIT = 96 µs
Duty Cycle 3(3) (6)
D3 = tBUS_rec(min)/(2 x tBIT
)
See 图8-10 and 图8-11
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7.7 Electrical Characteristics (continued)
parameters valid across -40℃≤TJ ≤150℃(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
THREC(MAX) = 0.778 x VSUP
THDOM(MAX) = 0.616 x VSUP
VSUP = 7 V to 18 V, tBIT = 96 µs
D3
D4
D4
D4
Duty cycle 3(1) (2) (6)
0.417
D3 = tBUS_rec(min)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MIN) = 0.389 x VSUP
THDOM(MIN) = 0.251 x VSUP
VSUP = 7 V to 18 V, tBIT = 96 µs
Duty Cycle 4(3)
ISO 17987 Param 30
0.59
0.59
0.59
D4 = tBUS_rec(MAX)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MAX) = 0.496 x VSUP
THDOM(MAX) = 0.361 x VSUP
VSUP = 4.5 V to 7 V, tBIT = 96 µs
Duty Cycle 4(3) (6)
D4 = tBUS_rec(MAX)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MIN) = 0.389 x VSUP
THDOM(MIN) = 0.251 x VSUP
VSUP = 7 V to 18 V, tBIT = 96 µs
Duty cycle 4(1) (2) (6)
D4 = tBUS_rec(MAX)/(2 x tBIT
)
See 图8-10 and 图8-11
THREC(MAX) = 0.665 x VSUP
THDOM(MAX) = 0.499 x VSUP
VSUP = 5.5 V to 7 V, tBIT = 52 µs
,
,
D1LB
D2LB
D3LB
D4LB
Duty cycle 1 at low battery(1) (2) (6)
Duty cycle 2 at low battery(1) (2) (6)
Duty cycle 3 at low battery(1) (2) (6)
Duty cycle 4 at low battery(1) (2) (6)
0.396
0.396
THREC(MAX) = 0.496 x VSUP
THDOM(MAX) = 0.361 x VSUP
VSUP = 6.1 V to 7 V, tBIT = 52 µs
0.581
THREC(MAX) = 0.665 x VSUP
,
THDOM(MAX) = 0.499 x VSUP
VSUP = 5.5 V to 7 V, tBIT = 96 µs
,
THREC(MAX) = 0.496 x VSUP
THDOM(MAX) = 0.361 x VSUP
VSUP = 6.1 V to 7 V, tBIT = 96 µs
0.581
10.8
THREC(MAX) = 0.744 x VSUP
,
Transmitter propagation delay timings for the duty
cycle(1) (2) (6)
Recessive to dominant
THDOM(MAX) = 0.581 x VSUP
7 V ≤VSUP ≤18 V, tBIT = 52 µs
tREC(MAX)_D1 - tDOM(MIN)_D1
Tr-d max_D1
Td-r max_D2
Tr-d max_D3
Td-r max_D4
Tr-d max_low
Td-r max_low
µs
µs
µs
µs
µs
µs
THREC(MAX) = 0.422 x VSUP
,
Transmitter propagation delay timings for the duty
cycle(1) (2) (6)
Dominant to recessive
THDOM(MAX) = 0.284 x VSUP
7 V ≤VSUP ≤18 V, tBIT = 52 µs
tDOM(MAX)_D2 - tREC(MIN)_D2
8.4
15.9
17.28
10.8
8.4
THREC(MAX) = 0.778 x VSUP
THDOM(MAX) = 0.616 x VSUP
7 V ≤VSUP ≤18 V, tBIT = 96 µs
tREC(MAX)_D3 - tDOM(MIN)_D3
Transmitter propagation delay timings for the duty
cycle(1) (2) (6)
Recessive to dominant
THREC(MIN) = 0.389 x VSUP
THDOM(MIN) = 0.251 x VSUP
7 V ≤VSUP ≤18 V, tBIT = 96 µs
tDOM(MAX)_D4 - tREC(MIN)_D4
Transmitter propagation delay timings for the duty
cycle(1) (2) (6)
Dominant to recessive
THREC(MAX) = 0.665 x VSUP
,
Low battery transmitter propagation delay timings
for the duty cycle(1) (2) (6)
Recessive to dominant
THDOM(MAX) = 0.499 x VSUP
5.5 V ≤VSUP ≤7 V, tBIT = 52 µs
tREC(MAX)_low - tDOM(MIN)_low
THREC(MAX) = 0.496 x VSUP
THDOM(MAX) = 0.361 x VSUP
6.1 V ≤VSUP ≤7 V, tBIT = 52 µs
tDOM(MAX)_low - tREC(MIN)_low
Low battery transmitter propagation delay timings
for the duty cycle(1) (2) (6)
Dominant to recessive
(1) SAE 2602 commander node load conditions: 5.5 nF/4 kΩ and 899 pF/20 kΩ
(2) SAE 2602 responder node load conditions: 5.5 nF/875 Ω and 899 pF/900 Ω
(3) ISO 17987 bus load conditions (CLINBUS, RLINBUS) include 1 nF/1 kΩ; 6.8 nF/660 Ω; 10 nF/500 Ω.
(4) RXD uses open drain output structure therefore VOL level is based upon microcontroller supply voltage.
(5) Ileak gnd = (VBAT - VLIN)/RLoad
(6) Specified by design
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7.8 AC Switching Characteristics
parameters valid across -40℃≤TJ ≤150℃(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Device Switching Characteristics
Receiver rising propagation delay time
ISO 17987 Param 31
trx_pdr
trx_pdf
trx_pdr
trx_pdf
5
5
6
6
µs
µs
µs
µs
5.5 V ≤VSUP , RRXD = 2.4 kΩ, CRXD = 20
pF
Receiver falling propagation delay time
ISO 17987 Param 31
See 图8-12 and 图8-13
Receiver rising propagation delay time
ISO 17987 Param 31
4.5 V ≤VSUP < 5.5 V, RRXD = 2.4 kΩ,
CRXD = 20 pF
See 图8-12 and 图8-13
Receiver falling propagation delay time
ISO 17987 Param 31
Rising edge with respect to falling edge
trx_sym = trx_pdf –trx_pdr
RRXD = 2.4 kΩ, CRXD = 20 pF
See 图8-12 and 图8-13
Symmetry of receiver propagation delay time
Receiver rising propagation delay time
ISO 17987 Param 32
trx_sym
2
µs
–2
tLINBUS
tCLEAR
Minimum dominant time on LIN bus for wake-up
25
8
65
25
150
50
µs
µs
See 图8-16, 图9-2 and 图9-3
Time to clear false wake-up prevention logic if LIN
bus had a bus stuck dominant fault (recessive
time on LIN bus to clear bus stuck dominant fault)
See 图9-3
Time to change from normal mode to sleep
mode through EN pin
See 图9-4 and 图8-14
tMODE_CHANGE Mode change delay time
2
15
45
µs
µs
Time for normal mode to initialize and data
on RXD pin to be valid, includes
tMODE_CHANGE for standby to normal mode.
See 图8-14
tNOMINT
Normal mode initialization time(1)
Time it takes for valid data on RXD upon
power-up
tPWR
Power-up time
1.5
80
ms
ms
tTXD_DTO
Dominant state time out
20
50
(1) The transition time from sleep mode to normal mode includes both tMODE_CHANGE and tNOMINT
.
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7.9 Typical Characteristics
40
35
30
25
20
15
10
5
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-55°C
25°C
125°C
150°C
-55°C
25°C
125°C
150°C
0
0
5
10
15
Supply voltage (V)
20
25
30
35
40
0
5
10
15
Supply voltage (V)
20
25
30
35
40
D001
D002
图7-1. VOH vs VSUP and Temperature
图7-2. VOL vs VSUP and Temperature
2.5
500
450
400
350
300
250
200
150
2.25
2
1.75
1.5
1.25
1
-55°C
25°C
125°C
150°C
-55°C
25°C
125°C
150°C
0.75
0.5
0.25
0
5
10
15
Supply voltage (V)
20
25
30
35
40
0
5
10
15
Supply voltage (V)
20
25
30
35
40
D003
D004
图7-3. ISUP Dominant vs VSUP and Temperature
图7-4. ISUP Recessive vs VSUP and Temperature
1.2
13
12
11
10
9
1
0.8
0.6
8
0.4
7
-55°C
25°C
125°C
150°C
-55°C
25°C
125°C
150°C
6
0.2
0
5
4
0
5
10
15
Supply voltage (V)
20
25
30
35
40
0
5
10
15
Supply voltage (V)
20
25
30
35
40
D005
D006
图7-5. Standby Mode ISUP Dominant vs VSUP and Temperature
图7-6. Standby Mode ISUP Recessive vs VSUP and Temperature
14
12
10
8
-55°C
25°C
6
125°C
150°C
4
0
5
10
15
20
25
Supply voltage (V)
30
35
40
D007
图7-7. Sleep Mode ISUP vs VSUP and Temperature
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8 Parameter Measurement Information
1
8
7
NC
RXD
Power Supply
Resolution: 10mV/1mA
Accuracy: 0.2%
5 V
2
VSUP
VPS
EN
NC
3
4
6
Pulse Generator
tR/tF Square Wave: < 20 ns
LIN
:
:
tR/tF Triangle Wave: < 40ns
TXD
5
GND
Frequency: 20 ppm
Jitter: < 25 ns
Measurement Tools
O-scope:
DMM
Copyright © 2017, Texas Instruments Incorporated
图8-1. Test System: Operating Voltage Range with RX and TX Access: Parameters 9, 10
Delta t = + 5 µs
Trigger Point
(tBIT = 50 µs)
RX
2 x tBIT = 100 µs (20 kBaud)
图8-2. RX Response: Operating Voltage Range
Period T = 1/f
Amplitude
(signal range)
LIN Bus Input
Frequency: f = 20 Hz
Symmetry: 50%
图8-3. LIN Bus Input Signal
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1
2
3
4
8
7
NC
RXD
Power Supply
Resolution: 10mV/1mA
Accuracy: 0.2%
5 V
VSUP
VPS
EN
NC
6
Pulse Generator
tR/tF Square Wave: < 20 ns
LIN
:
:
tR/tF Triangle Wave: < 40ns
TXD
5
GND
Frequency: 20 ppm
Jitter: < 25 ns
Measurement Tools
O-scope:
DMM
Copyright © 2017, Texas Instruments Incorporated
图8-4. LIN Receiver Test with RX access Param 17, 18, 19, 20
1
8
7
NC
RXD
EN
Power Supply 1
Resolution: 10mV/1mA
Accuracy: 0.2%
5 V
2
VSUP
VPS1
D
Power Supply 2
Resolution: 10mV/1mA
Accuracy: 0.2%
6
5
3
4
NC
LIN
VPS2
TXD
RBUS
GND
Measurement Tools
O-scope:
DMM
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图8-5. VSUP_NON_OP Param 11
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1
RXD
8
7
NC
Power Supply
Resolution: 10mV/1mA
Accuracy: 0.2%
2
3
VSUP
VPS
EN
NC
RMEAS = 499 Ω
6
LIN
5
4
TXD
GND
Measurement Tools
O-scope:
DMM
Copyright © 2017, Texas Instruments Incorporated
图8-6. Test Circuit for IBUS_PAS_dom; TXD = Recessive State VBUS = 0 V, Param 13
Power Supply 1
Resolution: 10mV/ 1mA
Accuracy: 0.2%
1
2
8
7
NC
RXD
EN
VPS1
VSUP
Power Supply 2
Resolution: 10mV/1mA
Accuracy: 0.2%
VPS2
1 kΩ
6
3
4
NC
LIN
VPS2 2 V/s ramp
[8 V ‰ 36 V]
5
TXD
GND
V Drop across resistor
< 20 mV
Measurement Tools
O-scope:
DMM
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图8-7. Test Circuit for IBUS_PAS_rec Param 14
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Power Supply 1
Resolution: 10mV/ 1mA
Accuracy: 0.2%
1
2
8
7
NC
RXD
EN
5 V
VPS1
VSUP
Power Supply 2
Resolution: 10mV/1mA
Accuracy: 0.2%
VPS2
1 kΩ
6
5
3
4
NC
LIN
VPS2 2 V/s ramp
[0 V ‰ 36 V]
TXD
GND
V Drop across resistor
< 1V
Measurement Tools
O-scope:
DMM
Copyright © 2017, Texas Instruments Incorporated
图8-8. Test Circuit for IBUS_NO_GND Loss of GND
8
1
2
NC
RXD
EN
5 V
7
VSUP
Power Supply 2
Resolution: 10mV/ 1mA
10 kΩ
6
3
4
Accuracy: 0.2%
VPS
NC
LIN
VPS 2 V/s ramp
[0 V ‰ 36 V]
5
TXD
GND
V Drop across resistor
< 1V
Measurement Tools
O-scope:
DMM
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图8-9. Test Circuit for IBUS_NO_BAT Loss of Battery
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1
2
8
7
RXD
NC
5 V
Power Supply 1
Resolution: 10mV/1mA
Accuracy: 0.2%
VSUP
EN
NC
VPS1
RMEAS
6
3
4
Power Supply 2
Resolution: 10mV/1mA
Accuracy: 0.2%
LIN
Pulse Generator
tR/tF Square Wave: < 20 ns
5
:
VPS2
TXD
GND
:
tR/tF Triangle Wave: < 40ns
Frequency: 20 ppm
Jitter: < 25 ns
Measurement Tools
O-scope:
DMM
Copyright © 2017, Texas Instruments Incorporated
图8-10. Test Circuit Slope Control and Duty Cycle Param 27, 28, 29, 30
TBIT
D = 50%
TXD (Input)
D112: 0.744 * VSUP
D312: 0.778 * VSUP
THREC(MAX)
THDOM(MAX)
THREC(MIN)
THDOM(MIN)
Thresholds
RX Node 1
D112: 0.581 * VSUP
D312: 0.616 * VSUP
LIN Bus
Signal
D212: 0.422 * VSUP
D412: 0.389 * VSUP
VSUP
Thresholds
RX Node 2
D212: 0.284 * VSUP
D412: 0.251 * VSUP
tBUS_REC(MIN)
tBUS_DOM(MAX)
RXD: Node 1
D1 (20 kbps)
D3 (10.4 kbps)
tBUS_DOM(MIN)
tBUS_REC(MAX)
RXD: Node 2
D2 (20 kbps)
D4 (10.4 kbps)
图8-11. Definition of Bus Timing Parameters
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VCC
2.4 kΩ
1
2
8
7
RXD
EN
NC
Power Supply
Resolution: 10mV/1mA
Accuracy: 0.2%
5 V
20 pF
VSUP
VPS
6
3
4
Pulse Generator
tR/tF Square Wave: < 20 ns
NC
LIN
:
:
tR/tF Triangle Wave: < 40ns
5
TXD
GND
Frequency: 20 ppm
Jitter: < 25 ns
Measurement Tools
O-scope:
DMM
Copyright © 2017, Texas Instruments Incorporated
图8-12. Propagation Delay Test Circuit; Param 31, 32
D1: 0.744 * VSUP
D3: 0.778 * VSUP
THREC(MAX)
THDOM(MAX)
THREC(MIN)
THDOM(MIN)
Thresholds
RX Node 1
D1: 0.581 * VSUP
D3: 0.616 * VSUP
LIN Bus
Signal
D2: 0.422 * VSUP
D4: 0.389 * VSUP
VSUP
Thresholds
RX Node 2
D2: 0.284 * VSUP
D4: 0.251 * VSUP
RXD: Node 1
D1 (20 kbps)
D3 (10.4 kbps)
trx_pdr(1)
trx_pdf(1)
RXD: Node 2
D2 (20 kbps)
D4 (10.4 kbps)
trx_pdr(2)
trx_pdf(2)
图8-13. Propagation Delay
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Wake Event
tMODE_CHANGE
tNOMINT
tMODE_CHANGE
EN
Transition
Sleep
Standby
Transition
Normal
Normal
MODE
Indeterminate
Ignore
Mirrors
Bus
Wake Request
RXD = Low
RXD
Floating
Indeterminate Ignore
Mirrors Bus
图8-14. Mode Transitions
EN
Weak Internal Pulldown
TXD
Weak Internal Pulldown
VSUP
LIN
RXD
Floating
Sleep
MODE
Normal
图8-15. Wakeup Through EN
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0.6 x VSUP
LIN
0.6 x VSUP
VSUP
0.4 x VSUP
0.4 x VSUP
t < tLINBUS
tLINBUS
TXD
Weak Internal Pulldown
EN
Floating
Sleep
RXD
MODE
Standby
Normal
图8-16. Wakeup through LIN
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9 Detailed Description
9.1 Overview
The TLIN1039-Q1 is a Local Interconnect Network (LIN) physical layer transceiver, compliant with LIN 2.0, LIN
2.1, LIN 2.2, LIN 2.2A and ISO/DIS 17987–4 standards, with integrated wake-up and protection features. The
LIN bus is a single-wire bidirectional bus typically used for low speed in-vehicle networks. The device transmitter
supports data rates from 2.4 kbps to 20 kbps and the receiver works up to 100 kbps supporting in-line
programming. The LIN protocol data stream on the TXD input is converted by the TLIN1039-Q1 into a LIN bus
signal using a current-limited wave-shaping driver as outlined by the LIN physical layer specification. The
receiver converts the data stream to logic-level signals that are sent to the microprocessor through the open-
drain RXD pin. The LIN bus has two states: dominant state (voltage near ground) and recessive state (voltage
near battery). In the recessive state, the LIN bus is pulled high by the internal pull-up resistor (45 kΩ) and a
series diode. No external pull-up components are required for responder node applications. Commander node
applications require an external pull-up resistor (1 kΩ) plus a series diode per the LIN specification.
The device is designed to support 12-V applications with a wide input voltage operating range and also supports
low-power sleep mode. The device also provides two methods to wake up: EN pin and from the LIN bus.
The TLIN1039-Q1 integrates ESD protection and fault protection which allow for a reduction in the required
external components in the applications. In the event of a ground shift or supply voltage disconnection, the
device prevents back-feed current through LIN to the supply input. The device also includes undervoltage
detection, temperature shutdown protection, and loss-of-ground protection.
9.2 Functional Block Diagram
VSUP/2
RXD
VSUP
Receiver
Filter
EN
45 kΩ
350 kΩ
Wake Up
State & Control
Fault Detection
& Protection
LIN
Dominant
State
Timeout
TXD
DR Slope CTL
350 kΩ
GND
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9.3 Feature Description
9.3.1 LIN (Local Interconnect Network) Bus
This high voltage input/output pin is a single-wire LIN bus transmitter and receiver. The LIN pin can survive
transient voltages up to 45 V. Reverse currents from the LIN to supply (VSUP) are minimized with blocking
diodes, even in the event of a ground shift or loss of supply (VSUP).
9.3.1.1 LIN Transmitter Characteristics
The transmitter has thresholds and AC parameters according to the LIN specification. The transmitter is a low-
side transistor with internal current limitation and thermal shutdown. During a thermal shutdown condition, the
transmitter is disabled to protect the device. There is an internal pull-up resistor with a serial diode structure to
VSUP, so no external pull-up components are required for the LIN responder node applications. An external pull-
up resistor and series diode to VSUP must be added when the device is used for a commander node application
per the LIN specification.
9.3.1.2 LIN Receiver Characteristics
The receiver characteristic thresholds are proportional to the device supply pin in accordance to the LIN
specification.
The receiver is capable of receiving higher data rates (> 100 kbps) than supported by LIN or SAE J2602
specifications. This allows the TLIN1039-Q1 to be used for high speed downloads at the end-of-line production
or other applications. The actual data rate achievable depends on system time constants (bus capacitance and
pull-up resistance) and driver characteristics used in the system.
9.3.1.2.1 Termination
There is an internal pull-up resistor with a serial diode structure to VSUP, so no external pull-up components are
required for the LIN responder node applications. An external pull-up resistor (1 kΩ) and a series diode to VSUP
must be added when the device is used for commander node applications as per the LIN specification.
图9-1 shows a commander node configuration, and how the voltage levels are defined.
Voltage drop across the
diodes in the pull-up path
VLIN_Bus
VSUP
VSUP
VSUP/2
RXD
VBattery
VSUP
VLIN_Recessive
Receiver
Filter
45 kΩ
1 kΩ
LIN
LIN Bus
TXD
350 kΩ
Transmitter
with slope control
GND
VLIN_Dominant
t
Copyright © 2020, Texas Instruments Incorporated
图9-1. Commander Node Configuration with Voltage Levels
9.3.2 TXD (Transmit Input and Output)
TXD is the interface to the MCU LIN protocol controller or SCI and UART that is used to control the state of the
LIN output. When TXD is low, the LIN output is dominant (near ground). When TXD is high, the LIN output is
recessive (near VBattery). See 图 9-1. The TXD input structure is compatible with microcontrollers with 3.3 V and
5 V I/O and integrates a weak pull-down resistor.
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9.3.3 RXD (Receive Output)
RXD is the interface to the MCU's LIN protocol controller or SCI and UART, which reports the state of the LIN
bus voltage. LIN recessive (near VBattery) is represented by a high level on the RXD and LIN dominant (near
ground) is represented by a low level on the RXD pin. The RXD output structure is an open-drain output stage.
This allows the device to be used with 3.3 V and 5 V I/O microcontrollers. If the microcontroller’s RXD pin does
not have an integrated pull-up, an external pull-up resistor to the microcontroller I/O supply voltage is required. In
standby mode the RXD pin is driven low to indicate a wake-up request from the LIN bus.
9.3.4 VSUP (Supply Voltage)
VSUP is the power supply pin. VSUP is connected to the battery through an external reverse-blocking diode (图
9-1). If there is a loss of power at the ECU level, the device has extremely low leakage from the LIN pin, which
does not load the bus down. This is optimal for LIN systems in which some of the nodes are unpowered (ignition
supplied) while the rest of the network remains powered (battery supplied).
9.3.5 GND (Ground)
GND is the device ground connection. The device can operate with a ground shift as long as the ground shift
does not reduce the VSUP below the minimum operating voltage, as well as ensuring the input and output
voltages are within their appropriate thresholds. If there is a loss of ground at the ECU level, the device has
extremely low leakage from the LIN pin, which does not load the bus down. This is optimal for LIN systems in
which some of the nodes are unpowered (ignition supplied) while the rest of the network remains powered
(battery supplied).
9.3.6 EN (Enable Input)
EN controls the operational modes of the device. When EN is high, the device is in normal operating mode
allowing a transmission path from TXD to LIN and from LIN to RXD. When EN is low, the device is put into sleep
mode and there are no transmission paths available. After LIN bus wake-up is received, the device can enter
normal mode only by making EN = high. EN has an internal pull-down resistor to make sure the device remains
in low-power mode even if EN floats.
9.3.7 Protection Features
The TLIN1039-Q1 has several protection features such as:
9.3.8 TXD Dominant Timeout (DTO)
While the LIN driver is active, TXD DTO circuit prevents the local node from blocking network communication in
event of a hardware or software failure where TXD is held dominant longer than the timeout period tTXD_DTO. The
TXD DTO circuit is triggered by a falling edge on TXD. If no rising edge is seen before the timeout constant of
the circuit, tTXD_DTO, expires the LIN driver is disabled releasing the bus line to the recessive level. This keeps
the bus free for communication between other nodes on the network. The LIN driver is re-activated on the next
dominant to recessive transition on the TXD terminal, thus clearing the dominant timeout. During this fault, the
transceiver remains in normal mode, the integrated LIN bus pull-up termination remains on, and the LIN receiver
and RXD terminal remain active reflecting the LIN bus data.
The TXD pin has an internal pull-down to make sure the transceiver fails to a known state if TXD is
disconnected. If EN pin is high at power-up the TLIN1039-Q1 enters normal mode. With the internal TXD
connected low, the DTO timer starts. To avoid a tTXD_DTO fault, a recessive signal should be put onto the TXD pin
before the tTXD_DTO timer expires, or the transceiver should be into sleep mode by connecting EN pin low.
9.3.9 Bus Stuck Dominant System Fault: False Wake-Up Lockout
The TLIN1039-Q1 contains logic to detect bus stuck dominant system faults and prevents the device from
waking up falsely during the system fault. Upon entering sleep mode, the device detects the state of the LIN bus.
If the bus is dominant, the wake-up logic is locked out until a valid recessive on the bus “clears”the bus stuck
dominant, preventing excessive current consumption. 图9-2 and 图9-3 show the behavior of this protection.
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EN
LIN Bus
tLINBUS
< tLINBUS
< tLINBUS
Copyright © 2020, Texas Instruments Incorporated
图9-2. No Bus Fault: Entering Sleep Mode with Bus Recessive Condition and Wake-up
EN
tLINBUS
tLINBUS
tLINBUS
LIN Bus
tCLEAR
< tCLEAR
Copyright © 2020, Texas Instruments Incorporated
图9-3. Bus Fault: Entering Sleep Mode with Bus Stuck Dominant Fault, Clearing, and Wake-up
9.3.10 Thermal Shutdown
The LIN transmitter is protected by current limiting circuitry. If the junction temperature of the device exceeds the
thermal shutdown threshold, the device puts the LIN transmitter into the recessive state. Once the over-
temperature fault condition has been removed and the junction temperature has cooled beyond the hysteresis
temperature, the transmitter is re-enabled, assuming the device remains in the normal operation mode. During
this fault, the transceiver remains in normal mode (assuming no change of state request on EN), the transmitter
is in recessive state, the RXD pin reflects the LIN bus and LIN bus pull-up termination remains on.
9.3.11 Under Voltage on VSUP
The TLIN1039-Q1 contains a power-on reset circuit to avoid false bus messages during under voltage conditions
when VSUP is less than UVSUP
.
9.3.12 Unpowered Transceiver
In automotive applications, some LIN nodes in a system can be unpowered, ignition supplied, while others in the
network remains powered by the battery. The TLIN1039-Q1 has extremely low unpowered leakage current from
the bus so an unpowered node does not affect the network or load it down.
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9.4 Functional Modes
The TLIN1039-Q1 has three functional modes of operation: normal, sleep, and standby. The next sections will
describe these modes as well as how the device moves between the different modes. 图 9-4 graphically shows
the relationship while 表9-1 shows the state of pins
表9-1. Operating Modes
MODE
EN
RXD
LIN BUS TERMINATION
TRANSMITTER
COMMENT
Sleep
Low
Floating
Weak current pull-up
Off
Wake-up event detected,
waiting on MCU to set EN
Standby
Normal
Low
Low
Off
On
45 kΩ
45 kΩ
High
LIN bus data
LIN transmission up to 20 kbps
Unpowered System
VSUP < UVSUP
VSUP > UVSUP
EN = LOW
,
VSUP > UVSUP
EN = High
,
VSUP < UVSUP
VSUP < UVSUP
Standby Mode
Driver: Off
RXD: Low
LIN termination: 45 kΩ
VSUP < UVSUP
EN = High
Normal Mode
LIN bus wake-up
Sleep Mode
Driver: On
RXD: LIN Bus Data
LIN termination: 45 kΩ
Driver: Off
RXD: Floating
LIN termination: Weak pull-up
EN = Low
EN = High
图9-4. Operating State Diagram
9.4.1 Normal Mode
If the EN pin is high at power-up, the device will power-up in normal mode. If the EN pin is low, it will power-up in
standby mode. The EN pin controls the mode of the device. In normal operational mode the receiver and
transmitter are active and the LIN transmission up to the LIN specified maximum of 20 kbps is supported. The
receiver detects the data stream on the LIN bus and outputs it on RXD for the LIN controller. A recessive signal
on the LIN bus is a logic high and a dominant signal on the LIN bus is a logic low. The driver transmits input data
from TXD to the LIN bus. Normal mode is entered as EN transitions high while the TLIN1039-Q1 is in sleep or
standby mode for > tNOMINT
.
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9.4.2 Sleep Mode
Sleep mode is the power saving mode for the TLIN1039-Q1. Sleep mode is only entered when the EN pin is low
and from normal mode. Even with extremely low current consumption in this mode, the TLIN1039-Q1 can still
wake-up from LIN bus through a wake-up signal or if EN is set high for ≥ tMODE_CHANGE. The LIN bus is filtered
to prevent false wake-up events. The wake-up events must be active for the respective time periods (tLINBUS).
The sleep mode is entered by setting EN low for longer than tMODE_CHANGE
.
While the device is in sleep mode:
• The LIN bus driver is disabled and the internal LIN bus termination is switched off (to minimize power loss if
LIN is short circuited to ground). However, the weak current pull-up is active to prevent false wake-up events
in case an external connection to the LIN bus is lost.
• The normal receiver is disabled.
• EN input and LIN wake-up receiver are active.
9.4.3 Standby Mode
This mode is entered whenever a wake-up event occurs through LIN bus while the device is in sleep mode. The
LIN bus responder mode termination circuit is turned on when standby mode is entered. Standby mode is
signaled through a low level on RXD. See Standby Mode Application Note for more application information.
When EN is set high for longer than tMODE_CHANGE while the device is in standby mode, the device returns to
normal mode. The normal transmission paths from TXD to LIN bus and LIN bus to RXD are enabled.
9.4.4 Wake-Up Events
There are two ways to wake up from sleep mode:
• Remote wake up initiated by the falling edge of a recessive (high) to dominant (low) state transition on LIN
bus where the dominant state is be held for tLINBUS filter time. After the tLINBUS filter time has been met, a
rising edge on the LIN bus going from dominant state to recessive state initiates a remote wake-up event,
eliminating false wake-ups from disturbances on the LIN bus or if the bus is shorted to ground.
• Local wake-up through EN being set high for longer than tMODE_CHANGE
.
9.4.4.1 Wake-Up Request (RXD)
When the TLIN1039-Q1 encounters a wake-up event from the LIN bus, RXD goes low and the device transitions
to standby mode until EN is reasserted high and the device enters normal mode. Once the device enters normal
mode, the RXD pin releases the wake-up request signal and the RXD pin then reflects the receiver output from
the LIN bus.
9.4.4.2 Mode Transitions
When the TLIN1039-Q1 is transitioning from normal to sleep or standby modes the device needs the time
tMODE_CHANGE to allow the change to fully propagate from the EN pin through the device into the new state.
When transitioning from sleep or standby to normal mode the device needs tNOMINT
.
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10 Application and Implementation
Note
以下应用部分中的信息不属于TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
10.1 Application Information
The TLIN1039-Q1 can be used as both a responder node device and a commander node device in a LIN
network. The device comes with the ability to support both remote wake up request and local wake up request.
10.2 Typical Application
The device integrates a 45 kΩ pull-up resistor and series diode for responder node applications. For commander
applications an external 1 kΩ pull-up resistor with series blocking diode can be used. 图 10-1 shows the device
being used in both commander node and responder node applications.
VBAT
VSUP
VDD
VDD
VSUP
VDD
(4)
(3)
I/O
EN
1 k
(2)
TLIN1039 LIN
MCU
VDD
LIN Controller
Or
220 pF
SCI/UART(1)
RXD
TXD
GND
GND
Commander Node
VBAT
VSUP
VDD
VDD
VSUP
(4)
VDD
I/O
EN
(2)
MCU
TLIN1039 LIN
VDD
LIN Controller
Or
220 pF
SCI/UART(1)
RXD
TXD
GND
GND
Responder Node
(1) If RXD on MCU, or LIN transceiver, has an internal pull-up, then an external pull-up resistor is not required.
(2) If RXD on MCU, or LIN transceiver, does not have an internal pull-up, then an external pull-up resistor is required.
(3) Commander node applications require an external 1 k pull-up resistor and serial diode.
(4) Decoupling capacitor values are system dependent but usually have 100 nF, 1 µF and ≥10 µF
图10-1. Typical LIN Bus
10.2.1 Design Requirements
The RXD output structure is an open-drain output stage. This allows the TLIN1039-Q1 to be used with 3.3 V and
5 V I/O processor. If the RXD pin of the processor does not have an integrated pull-up, an external pull-up
resistor to the processor I/O supply voltage is required. The external pull-up resistor value should be between 1
kΩto 10 kΩ, depending on supply used (See IOL in electrical characteristics). The VSUP pin of the device should
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be decoupled with a 100 nF capacitor by placing it close to the VSUP supply pin. The system should include
additional decoupling on the VSUP line as needed per the application requirements.
10.2.2 Detailed Design Procedures
10.2.2.1 Normal Mode Application Note
When using the TLIN1039-Q1 in systems which are monitoring the RXD pin for a wake-up request, special care
should be taken during the mode transitions. The output of the RXD pin is indeterminate for the transition period
between states as the receivers are switched. The application software should not look for an edge on the RXD
pin, for indication of wake-up request, until tMODE_CHANGE has been met. This is shown in 图8-14
10.2.2.2 Standby Mode Application Note
If the TLIN1039-Q1 detects an under voltage on VSUP, the RXD pin transitions low and signals to the software
that the TLIN1039-Q1 is in standby mode. The transceiver should be returned to sleep mode for the lowest
power state.
10.2.3 Application Curves
图 10-2 and 图 10-3 show the propagation delay from the TXD pin to the LIN pin for the dominant to recessive
and recessive to dominant edges. The device was configured as a commander node with an external pull-up
resistor (1 kΩ) and 680 pF bus capacitance.
图10-3. Recessive to Dominant Propagation Delay
图10-2. Dominant to Recessive Propagation Delay
11 Power Supply Recommendations
The was designed to operate directly from a car battery, or any other DC supply ranging from 4.5 V to 36 V. The
VSUP pin of the transceiver should be decoupled with a 100-nF capacitor by placing it close to the VSUP supply
pin. The system should include additional decoupling on the VSUP line as needed per the application
requirements.
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12 Layout
For the PCB design to be successful, start with design of the protection and filtering circuitry. Because ESD
transients have a wide frequency bandwidth from approximately 3 MHz to 3 GHz, high frequency layout
techniques must be applied during PCB design. Placement at the connector also prevents these noisy events
from propagating further into the PCB and system.
12.1 Layout Guidelines
• Pin 1 (RXD): The pin is an open-drain output and requires an external pull-up resistor in the range of 1 kΩ to
10 kΩ to function properly. Note that the minimum value depends on the logic supply used. See IOL in
electrical specifications. If the microprocessor paired with the transceiver does not have an integrated pull-up,
an external resistor should be placed between RXD and the regulated voltage supply for the microprocessor.
• Pin 2 (EN): EN is an input pin that is used to place the device in a low-power sleep mode. If this feature is not
used the pin should be pulled high to the regulated voltage supply of the microprocessor through a series
resistor between 1 kΩ and 10 kΩ. Additionally, a series resistor may be placed on the pin to limit current on
the digital lines in the case of an over voltage fault.
• Pin 3 (NC): Not Connected.
• Pin 4 (TXD): The TXD pin is used to transmit the input signal from the microcontroller. To prevent an over-
voltage on this pin, a series resistor can be placed to limit the input current to the device. A capacitor to
ground can be placed close to the input pin of the device to filter noise.
• Pin 5 (GND): This is the ground connection for the device. This pin should be tied to the ground plane
through a short trace with the use of two vias to limit total return inductance.
• Pin 6 (LIN): This pin connects to the LIN bus. For responder mode applications a 220 pF capacitor to ground
is implemented. For commander mode applications, an additional series resistor and blocking diode should
be placed between the LIN pin and the VSUP pin. See Typical LIN Bus.
• Pin 7 (VSUP): This is the supply pin for the device. A 100 nF decoupling capacitor should be placed as close
to the device as possible.
• Pin 8 (NC): Not Connected.
Note
All ground and power connections should be made as short as possible, and use at least two vias to
minimize the total loop inductance.
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12.2 Layout Example
VDD
RXD
1
2
NC
8
7
RXD
U1
VDD
VSUP
R2
EN
EN
VSUP
C3
GND
D1
Only needed for
the commander
node
LIN
3
5
6
NC
LIN
GND
GND
GND
5
TXD
GND
TXD
R6
GND
图12-1. Layout Example
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13 Device and Documentation Support
13.1 Related Documentation
For related documentation see the following:
• LIN Standards:
– ISO/DIS 17987-1.2: Road vehicles -- Local Interconnect Network (LIN) -- Part 1: General information and
use case definition
– ISO/DIS 17987-4.2: Road vehicles -- Local Interconnect Network (LIN) -- Part 4: Electrical Physical Layer
(EPL) specification 12V/24V
– SAE J2602-1: LIN Network for Vehicle Applications
– LIN Specifications LIN 2.0, LIN 2.1, LIN 2.2 and LIN 2.2A
• EMC requirements:
– SAE J2962-1: Communication Transceivers Qualification Requirements - LIN
– ISO 10605: Road vehicles - Test methods for electrical disturbances from electrostatic discharge
– ISO 11452-4:2011: Road vehicles - Component test methods for electrical disturbances from narrowband
radiated electromagnetic energy - Part 4: Harness excitation methods
– ISO 7637-1:2015: Road vehicles - Electrical disturbances from conduction and coupling - Part 1:
Definitions and general considerations
– ISO 7637-3: Road vehicles - Electrical disturbances from conduction and coupling - Part 3: Electrical
transient transmission by capacitive and inductive coupling via lines other than supply lines
– IEC 62132-4:2006: Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz -
Part 4: Direct RF power injection method
– IEC 61000-4-2
– IEC 61967-4
– CISPR25
• Conformance Test requirements:
– ISO/DIS 17987-7.2: Road vehicles -- Local Interconnect Network (LIN) -- Part 7: Electrical Physical Layer
(EPL) conformance test specification
– SAE J2602-2: LIN Network for Vehicle Applications Conformance Test
13.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
13.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
13.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
13.5 静电放电警告
静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理
和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参
数更改都可能会导致器件与其发布的规格不相符。
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13.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated transceiver. This data is subject to change without notice and revision
of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TLIN1039DDFRQ1
ACTIVE SOT-23-THIN
DDF
8
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2JIF
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
29-Aug-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TLIN1039DDFRQ1
SOT-
DDF
8
3000
180.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
23-THIN
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
29-Aug-2021
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOT-23-THIN DDF
SPQ
Length (mm) Width (mm) Height (mm)
210.0 185.0 35.0
TLIN1039DDFRQ1
8
3000
Pack Materials-Page 2
PACKAGE OUTLINE
DDF0008A
SOT-23 - 1.1 mm max height
S
C
A
L
E
4
.
0
0
0
PLASTIC SMALL OUTLINE
C
2.95
2.65
SEATING PLANE
TYP
PIN 1 ID
AREA
0.1 C
A
6X 0.65
8
1
2.95
2.85
NOTE 3
2X
1.95
4
5
0.38
0.22
8X
0.1
C A B
1.65
1.55
B
1.1 MAX
0.20
0.08
TYP
SEE DETAIL A
0.25
GAGE PLANE
0.1
0.0
0 - 8
0.6
0.3
DETAIL A
TYPICAL
4222047/C 10/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
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EXAMPLE BOARD LAYOUT
DDF0008A
SOT-23 - 1.1 mm max height
PLASTIC SMALL OUTLINE
8X (1.05)
SYMM
1
8
8X (0.45)
SYMM
6X (0.65)
5
4
(R0.05)
TYP
(2.6)
LAND PATTERN EXAMPLE
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4222047/C 10/2022
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
DDF0008A
SOT-23 - 1.1 mm max height
PLASTIC SMALL OUTLINE
8X (1.05)
SYMM
(R0.05) TYP
8
1
8X (0.45)
SYMM
6X (0.65)
5
4
(2.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
4222047/C 10/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
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