TPS22966TDPUTQ1 [TI]

具有可调节上升时间和输出放电功能的 2 通道、5.5V、16mΩ 汽车负载开关 | DPU | 14 | -40 to 105;


型号：	TPS22966TDPUTQ1
厂家：	TEXAS INSTRUMENTS
描述：	具有可调节上升时间和输出放电功能的 2 通道、5.5V、16mΩ 汽车负载开关 \| DPU \| 14 \| -40 to 105 开关
文件：	总28页 (文件大小：1606K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

TPS22966-Q1 双通道、超低电阻负载开关

1 特性

2 应用

•

符合汽车类应用要求

具有符合 AEC-Q100 标准的下列特性：

•

信息娱乐

ADAS（高级驾驶辅助系统）

–

器件温度等级 2：-40°C 至 105°C 的环境工作

温度范围

3 说明

TPS22966-Q1 器件是一款上升时间可调节的小型、超

低 R_ON双通道负载开关。此器件包含两个可在 0V 至

5.5V 输入电压范围内工作的 N 沟道 MOSFET，并且

每通道支持最大 4A 的连续电流。每个开关由一个导通

/关断输入（ON1 和 ON2）单独控制，此输入可与低电

压控制信号直接连接。TPS22966-Q1 包含一个 230Ω

片上电阻，用于在开关关闭时快速输出放电。

器件人体放电模式 (HBM) 静电放电 (ESD) 分类

等级 H1C

器件组件充电模式 (CDM) ESD 分类等级 C6

•

集成双通道负载开关

输入电压范围：0V 至 5.5V

超低导通电阻 (R_ON

)

–

V_IN= 5V (V_BIAS= 5V) 时，R_ON= 16mΩ

V_IN= 3.3V (V_BIAS= 5V) 时，R_ON= 16mΩ

V_IN= 1.8V (V_BIAS= 5V) 时，R_ON= 16mΩ

TPS22966-Q1 采用节省空间的 2mm × 3mm 14-SON

小型封装 (DPU)，带有集成散热焊盘，可实现较高的

功率耗散。器件在自然通风环境下的额定运行温度范围

为 –40°C 至 105℃。

•

每通道最大 4A 持续开关电流

低静态电流

–

80µA（两个通道）

80µA（单通道）

器件信息⁽¹⁾

器件型号

封装

封装尺寸（标称值）

•

低控制输入阈值支持使用

1.2V、1.8V、2.5V 和 3.3V 逻辑器件

可配置的上升时间

TPS22966-Q1

WSON (14)

3.00mm × 2.00mm

(1) 如需了解所有可用封装，请见数据表末尾的可订购产品附录。

•

快速输出放电 (QOD)

带有散热焊盘的 SON 14 引脚封装

典型应用原理图

VIN1

ON1

VOUT1

Dual

C_IN

Power

C_L

R_L

CT1

CT2

OFF

Supply

GND

VBIAS

Dual

DC/DC

converter

VIN2

ON2

VOUT2

C_IN

C_L

OFF

GND

TPS22966-Q1

GND

本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确

性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLVSC71

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

8.2 Functional Block Diagram ....................................... 14

8.3 Feature Description................................................. 15

8.4 Device Functional Modes........................................ 15

Application and Implementation ........................ 16

9.1 Application Information............................................ 16

9.2 Typical Application ................................................. 18

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 5

6.5 Electrical Characteristics: V_BIAS= 5 V ...................... 5

6.6 Electrical Characteristics: V_BIAS= 2.5 V ................... 6

6.7 Switching Characteristics.......................................... 7

6.8 Typical Characteristics.............................................. 8

Parameter Measurement Information ................ 13

Detailed Description ............................................ 14

8.1 Overview ................................................................. 14

10 Power Supply Recommendations ..................... 20

11 Layout................................................................... 20

11.1 Layout Guidelines ................................................. 20

11.2 Layout Example .................................................... 21

12 器件和文档支持 ..................................................... 22

12.1 商标....................................................................... 22

12.2 静电放电警告......................................................... 22

12.3 Glossary................................................................ 22

12.4 接收文档更新通知 ................................................. 22

12.5 支持资源................................................................ 22

13 机械、封装和可订购信息....................................... 22

4 修订历史记录

Changes from Revision A (March 2015) to Revision B

Page

•

Changed Input voltage range from 0.8 V to 0 V in the Recommended Operating Conditions table .................................... 4

Changes from Original (December 2013) to Revision A

Page

•

已添加添加了引脚配置和功能部分、ESD 额定值表、特性说明部分、器件功能模式、应用和实施部分、电源建议

部分、布局部分、器件和文档支持部分以及机械、封装和可订购信息部分 ......................................................................... 1

TPS22966-Q1

www.ti.com.cn

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

5 Pin Configuration and Functions

DPU Package

14-Pin WSON

VIN1

VOUT1

VIN1

VOUT1

GND

VBIAS

ON2

VBIAS

ON2

VIN2

VOUT2

Top View

Bottom View

Pin Functions

I/O

DESCRIPTION

NO.

NAME

VIN1

Switch 1 input. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during

turnon of the channel. See Application Information section for more information.

VIN1

Switch 1 input. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during

turnon of the channel. See Application Informationfor more information.

ON1

VBIAS

ON2

Active high switch 1 control input. Do not leave floating.

Bias voltage. Power supply to the device. See Application Information for more information.

Active high switch 2 control input. Do not leave floating.

VIN2

Switch 2 input. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during

turnon of the channel. See Application Information for more information.

VIN2

Switch 2 input. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during

turnon of the channel. See Application Information for more information.

VOUT2

CT2

Switch 2 output.

Switch 2 slew rate control. Can be left floating. Capacitor used on this pin should be rated for a minimum of 25

V for desired rise time performance.

GND

CT1

–

Ground

Switch 1 slew rate control. Can be left floating. Capacitor used on this pin should be rated for a minimum of 25

V for desired rise time performance.

VOUT1

Switch 1 output.

Thermal Pad

Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Guidelines for layout

guidelines.

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)⁽¹⁾

(2)

MIN

–0.3

MAX

UNIT

V_IN1,2

Input voltage

V_OUT1,2Output voltage

V_ON1,2

V_BIAS

I_MAX

I_PLS

ON-pin voltage

VBIAS voltage

Maximum continuous switch current per channel

Maximum pulsed switch current per channel, pulse <300 µs, 2% duty cycle

Maximum junction temperature

T_J

150

300

150

°C

T_LEAD

T_STG

Maximum lead temperature (10-s soldering time)

Storage temperature

–65

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE

±4000

±1500

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

V_(ESD)

Electrostatic discharge

Charged-device model (CDM), per JEDEC specification JESD22-

C101⁽²⁾

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

MAX UNIT

V_IN1,2

V_BIAS

V_ON1,2

V_OUT1,2

V_IH

Input voltage range

2.5

V_BIAS

5.5

Bias voltage range

ON voltage range

5.5

Output voltage range

High-level input voltage, ON

Low-level input voltage, ON

Input capacitor

V_IN

V_BIAS= 2.5 V to 5.5 V

1.2

1⁽¹⁾

5.5

V_IL

0.5

C_IN1,2

T_A

µF

°C

Operating free-air temperature⁽²⁾

–40

105

(1) Refer to Application Information.

(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature [T_J(max)], the

maximum power dissipation of the device in the application [P_D(max)], and the junction-to-ambient thermal resistance of the part/package

in the application (θ_JA), as given by the following equation: T_A(max)= T_J(max)– (θ_JA× P_D(max)

)

TPS22966-Q1

www.ti.com.cn

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

6.4 Thermal Information

TPS22966-Q1

THERMAL METRIC⁽¹⁾

DPU (WSON)

14 PINS

52.3

UNIT

θ_JA

Junction-to-ambient thermal resistance

θ_JCtop

θ_JB

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

45.9

11.5

°C/W

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

0.8

ψ_JB

11.4

θ_JCbot

6.9

(1) 有关传统和新热指标的更多信息，请参见应用报告《半导体和 IC 封装热指标》（文献编号：SPRA953）。

6.5 Electrical Characteristics: V_BIAS= 5 V

Unless otherwise noted, the specifications apply over the operating ambient temperature, –40°C ≤ T_A≤ 105°C (full) and V_BIAS

= 5 V. Typical values are for T_A= 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

T_A

MIN TYP MAX UNIT

POWER SUPPLIES AND CURRENTS

I_OUT1= I_OUT2= 0 mA,

V_IN1,2= V_ON1,2= V_BIAS= 5 V

V_BIASquiescent current (both

I_IN(VBIAS-ON)

channels)

–40°C to 105°C

80 120

µA

I_OUT1= I_OUT2= 0 mA, V_ON2= 0 V

V_IN1,2= V_ON1= V_BIAS= 5 V

V_BIASquiescent current (single

I_IN(VBIAS-ON)

channel)

–40°C to 105°C

80 120

µA

I_{IN(VBIAS-OFF)}V_BIASshutdown current

V_ON1,2= 0 V, V_OUT1,2= 0 V

V_IN1,2= 5 V

0.5

0.1

V_IN1,2= 3.3 V

V_IN1,2= 1.8 V

V_IN1,2= 0.8 V

V_ON1,2= 0 V,

V_OUT1,2= 0 V

V_IN1,2off-state supply current

(per channel)

I_IN(VIN-OFF)

–40°C to 105°C

µA

0.07

0.04

I_ON

ON pin input leakage current

V_ON= 5.5 V

RESISTANCE CHARACTERISTICS

25°C

V_IN= 5 V

–40°C to 85°C

–40°C to 105°C

25°C

V_IN= 3.3 V

V_IN= 1.8 V

V_IN= 1.5 V

V_IN= 1.2 V

V_IN= 0.8 V

–40°C to 85°C

–40°C to 105°C

25°C

–40°C to 85°C

–40°C to 105°C

25°C

I_OUT= –200 mA,

V_BIAS= 5 V

ON-state resistance (per

channel)

R_ON

mΩ

–40°C to 85°C

–40°C to 105°C

25°C

–40°C to 85°C

–40°C to 105°C

25°C

–40°C to 85°C

–40°C to 105°C

V_IN= 5.0 V, V_ON= 0 V, I_OUT

15 mA

R_PD

Output pulldown resistance

–40°C to 105°C

230 330

Ω

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

6.6 Electrical Characteristics: V_BIAS= 2.5 V

Unless otherwise noted, the specifications apply over the operating ambient temperature

–40°C ≤ T_A≤ 105°C (full) and V_BIAS= 2.5 V. Typical values are for T_A= 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

T_A

MIN TYP MAX UNIT

POWER SUPPLIES AND CURRENTS

I_OUT1= I_OUT2= 0 mA,

V_IN1,2= V_ON1,2= V_BIAS= 2.5 V

V_BIASquiescent current (both

I_IN(VBIAS-ON)

channels)

–40°C to 105°C

µA

I_OUT1= I_OUT2= 0 mA, V_ON2= 0 V

V_IN1,2= V_ON1= V_BIAS= 2.5 V

V_BIASquiescent current (single

I_IN(VBIAS-ON)

channel)

–40°C to 105°C

µA

I_{IN(VBIAS-OFF)}V_BIASshutdown current

V_ON1,2= 0 V, V_OUT1,2= 0 V

V_IN1,2= 2.5 V

0.13

0.07

0.05

0.04

V_IN1,2= 1.8 V

V_IN1,2= 1.2 V

V_IN1,2= 0.8 V

V_ON1,2= 0 V,

V_OUT1,2= 0 V

V_IN1,2off-state supply current

(per channel)

I_IN(VIN-OFF)

–40°C to 105°C

µA

I_ON

ON pin input leakage current

V_ON= 5.5 V

RESISTANCE CHARACTERISTICS

25°C

V_IN= 2.5 V

V_IN= 1.8 V

V_IN= 1.5 V

V_IN= 1.2 V

V_IN= 0.8 V

–40°C to 85°C

–40°C to 105°C

25°C

–40°C to 85°C

–40°C to 105°C

25°C

I_OUT= –200 mA,

V_BIAS= 2.5 V

R_ON

ON-state resistance

–40°C to 85°C

–40°C to 105°C

25°C

mΩ

–40°C to 85°C

–40°C to 105°C

25°C

–40°C to 85°C

–40°C to 105°C

Full

R_PD

Output pulldown resistance

V_IN= 2.5 V, V_ON= 0 V, I_OUT= 1 mA

280 330

Ω

TPS22966-Q1

www.ti.com.cn

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

6.7 Switching Characteristics

PARAMETER

TEST CONDITION

MIN

TYP

MAX UNIT

V_IN= V_ON= V_BIAS= 5 V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turnon time

Turnoff time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

1559

1991

µs

t_F

t_D

665

V_IN= 0.8 V, V_ON= V_BIAS= 5 V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turnon time

Turnoff time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

732

161

371

µs

t_F

t_D

544

V_IN= 2.5 V, V_ON= 5 V, V_BIAS= 2.5 V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turnon time

Turnoff time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

2410

2412

t_F

t_D

1181

V_IN= 0.8 V, V_ON= 5 V, V_BIAS= 2.5 V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turnon time

Turnoff time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

1575

124

927

t_F

t_D

1089

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

6.8 Typical Characteristics

100

120

-40°C

25°C

100

105°C

V_IN1= V_IN2= V_BIAS, V_ON1= V_ON2= 5V, V_OUT= Open

2.5 2.75

3.25 3.5 3.75

4.25 4.5 4.75

5.25 5.5

2.5 2.75

3.25 3.5 3.75

4.25 4.5 4.75

5.25 5.5

V_BIAS(V)

C001

C002

图 1. Quiescent Current vs. V_BIAS(Both Channels)

图 2. Quiescent Current vs. V_BIAS(Single Channel)

1.2

0.3

-40°C

25°C

V_BIAS= 5V, V_ON= 0V, V_OUT= 0V

1.1

25°C

0.25

0.2

0.15

0.1

0.05

105°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

105°C

V_IN1=V_IN2=V_BIAS, V_ON1= V_ON2= 0V, V_OUT= 0V

2.5 2.75

3.25 3.5 3.75

4.25 4.5 4.75

5.25 5.5

0.8 1.2 1.6

2.4 2.8 3.2 3.6

V_IN(V)

4.4 4.8 5.2

V_BIAS(V)

C004

C003

图 4. Off-State VIN Current vs. V_IN(Single Channel)

图 3. Shutdown Current vs. V_BIAS(Both Channels)

VIN = 0.8V

VIN = 1.2V

VIN = 1.5V

VIN = 2.5V

VIN = 3.3V

VIN = 5V

VIN = 1.5V

VIN = 1.8V

VIN = 2.5V

V_BIAS= 2.5V, I_OUT= -200mA

55 80 105

V_BIAS= 5V, I_OUT= -200mA

55 80

-45

-20

-45

-20

105

Temperature (ºC)

C005

C006

图 5. R_ONvs. Temperature (V_BIAS= 2.5 V, Single Channel)

图 6. R_ONvs. Temperature (V_BIAS= 5 V, Single Channel)

TPS22966-Q1

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ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

Typical Characteristics (接下页)

-40°C

25°C

105°C

V_BIAS= 2.5V, I_OUT= -200mA

2.2 2.4

V_BIAS= 5V, I_OUT= -200mA

0.8

1.2

1.4

1.6

1.8

2.6

0.8

1.2

1.6

2.4

2.8

3.2

3.6

4.4

4.8

5.2

V_IN(V)

C007

C008

图 7. R_ONvs. V_IN(V_BIAS= 2.5 V, Single Channel)

图 8. R_ONvs. V_IN(V_BIAS= 5 V, Single Channel)

250

22.5

22.0

21.5

21.0

20.5

20.0

19.5

19.0

18.5

VBIAS = 2.5V

VBIAS = 3.6V

VBIAS = 5V

VBIAS = 3.3V

VBIAS = 4.2V

VBIAS = 5.5V

-40°C

25°C

245

240

235

230

225

220

105°C

I_OUT= 1mA, V_BIAS= 5V, V_ON= 0V

3.6 4.4 4.8 5.2

0.8 1.2 1.6

2.4 2.8 3.2 3.6

V_IN(V)

4.4 4.8 5.2 5.6

0.8

1.2

1.6

2.4

2.8

3.2

V_IN(V)

C011

C010

图 9. R_ONvs. V_IN(T_A= 25°C, Single Channel)

图 10. R_PDvs. V_IN(V_BIAS= 5 V, Single Channel)

2.5

1800

V_BIAS= 2.5V

CT = 1nF

1600

1400

1200

1000

800

2.0

1.5

VBIAS = 2.5V

1.0

VBIAS = 3.3V

VBIAS = 3.6V

-40°C

25°C

0.5

0.0

VBIAS = 4.2V

VBIAS = 5V

600

85°C

VBIAS = 5.5V

105°C

400

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

0.5

1.5

2.5

V_IN(V)

V_ON(V)

C024

C012

图 11. V_OUTvs. V_ON(T_A= 25°C, Single Channel)

图 12. t_Dvs. V_IN(V_BIAS= 2.5 V, CT = 1 nF)

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

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Typical Characteristics (接下页)

900

-40°C

25°C

V_BIAS= 2.5V, CT = 1nF

V_BIAS= 5V

CT = 1nF

800

700

600

500

400

300

85°C

105°C

-40°C

25°C

85°C

105°C

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

0.8

1.2

1.6

2.4

2.8

3.2

3.6

4.4

4.8

5.2

V_IN(V)

C014

C013

图 14. t_Fvs. V_IN(V_BIAS= 2.5 V, CT = 1 nF)

图 13. t_Dvs. V_IN(V_BIAS= 5 V, CT = 1 nF)

180

160

140

120

100

-40°C

25°C

V_BIAS= 5V, CT = 1nF

V_BIAS= 2.5V, CT = 1nF

25°C

85°C

105°C

85°C

105°C

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

1.2

1.6

2.4

2.8

3.2

3.6

4.4

4.8

5.2

V_IN(V)

C015

C016

图 16. t_OFFvs. V_IN(V_BIAS= 2.5 V, CT = 1 nF)

图 15. t_Fvs. V_IN(V_BIAS= 5 V, CT = 1 nF)

3500

3000

2500

2000

1500

1000

250

200

150

100

-40°C

25°C

-40°C

V_BIAS= 5V, CT = 1nF

25°C

85°C

105°C

85°C

105°C

V_BIAS= 2.5V

CT = 1nF

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

1.2

1.6

2.4

2.8

3.2

3.6

4.4

4.8

5.2

V_IN(V)

C018

C017

图 18. t_ONvs. V_IN(V_BIAS= 2.5 V, CT = 1 nF)

图 17. t_OFFvs. V_IN(V_BIAS= 5 V, CT = 1 nF)

TPS22966-Q1

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ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

Typical Characteristics (接下页)

3500

3000

2500

2000

1500

1000

500

2000

-40°C

25°C

-40°C

25°C

1800

85°C

105°C

1600

1400

1200

1000

800

105°C

600

V_BIAS= 2.5V

CT = 1nF

V_BIAS= 5V

CT = 1nF

400

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

0.8

1.2

1.6

2.4

2.8

3.2

3.6

4.4

4.8

5.2

V_IN(V)

C020

C019

图 20. t_Rvs. V_IN(V_BIAS= 2.5 V, CT = 1 nF)

图 19. t_ONvs. V_IN(V_BIAS= 5 V, CT = 1 nF)

2750

2250

1750

1250

750

3500

3000

2500

2000

1500

1000

500

-40°C

25°C

-40°C

V_IN= 2.5V

CT = 1nF

25°C

85°C

105°C

V_BIAS= 5V

CT = 1nF

250

0.8

1.2

1.6

2.4

2.8

3.2

3.6

4.4

4.8

5.2

2.5

2.75

3.25

3.5

3.75

4.25

4.5

4.75

V_BIAS(V)

V_IN(V)

C021

C022

图 21. t_Rvs. V_IN(V_BIAS= 5 V, CT = 1 nF)

图 22. t_Rvs. V_BIAS(V_IN= 2.5 V, CT = 1 nF)

6.8.1 Typical AC Scope Captures at T_A= 25ºC, CT = 1 nF

图 23. Turnon Response Time (V_IN= 0.8 V, V_BIAS= 2.5 V,

C_IN= 1 µF, C_L= 0.1 µF, R_L= 10 Ω)

图 24. Turnon Response Time (V_IN= 0.8 V, V_BIAS= 5 V, C_IN

= 1 µF, C_L= 0.1 µF, R_L= 10 Ω)

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

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Typical AC Scope Captures at T_A= 25ºC, CT = 1 nF (接下页)

图 25. Turnon Response Time (V_IN= 2.5 V, V_BIAS= 2.5 V,

C_IN= 1 µF, C_L= 0.1 µF, R_L= 10 Ω)

图 26. Turnon Response Time (V_IN= 5 V, V_BIAS= 5 V, C_IN

1 µF, C_L= 0.1 µF, R_L= 10 Ω)

图 27. Turnoff Response Time (V_IN= 0.8 V, V_BIAS= 2.5 V,

C_IN= 1 µF, C_L= 0.1 µF, R_L= 10 Ω)

图 28. Turnoff Response Time (V_IN= 0.8 V, V_BIAS= 5 V, C_IN

= 1 µF, C_L= 0.1 µF, R_L= 10 Ω)

图 29. Turnoff Response Time (V_IN= 2.5 V, V_BIAS= 2.5 V,

C_IN= 1 µF, C_L= 0.1 µF, R_L= 10 Ω)

图 30. Turnoff Response Time (V_IN= 5 V, V_BIAS= 5 V, C_IN

1 µF, C_L= 0.1 µF, R_L= 10 Ω)

TPS22966-Q1

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ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

7 Parameter Measurement Information

VIN

VOUT

C_IN= 1µF

C_L

(A)

R_L

OFF

VBIAS

GND

TPS22966-Q1

GND

Single channel shown for clarity.

TEST CIRCUIT

V_ON

50%

t_F

t_OFF

t_R

V_OUT

t_ON

90%

50%

V_OUT

10%

t_D

TIMING WAVEFORMS

(A) Control signal rise and fall times are 100 ns.

图 31. Test Circuit and Timing Waveforms

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

8 Detailed Description

8.1 Overview

The device is a dual-channel, 4-A automotive load switch in a 14-pin SON package. To reduce the voltage drop

in high current rails, the device implements a low-resistance N-channel MOSFET.

The device has a programmable slew rate for applications that require specific rise-time. The device has very low

leakage current during off state. This prevents downstream circuits from pulling high standby current from the

supply. Integrated control logic, driver, power supply, and output discharge FET eliminates the need for any

external components, which reduces solution size and bill of materials (BOM) count.

8.2 Functional Block Diagram

VIN1

Control

Logic

ON1

CT1

VOUT1

GND

VBIAS

Charge Pump

VOUT2

CT2

Control

Logic

ON2

VIN2

TPS22966-Q1

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ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

8.3 Feature Description

8.3.1 Quick Output Discharge

Each channel of the TPS22966-Q1 includes a Quick Output Discharge (QOD) feature. When the switch is

disabled, a discharge resistor is connected between VOUT and GND. This resistor has a typical value of 230-Ω

and prevents the output from floating while the switch is disabled.

8.3.2 ON/OFF Control

The ON pins control the state of the switch. Asserting ON high enables the switch. ON is active high and has a

low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard

GPIO logic threshold. It can be used with any microcontroller with 1.2-V or higher GPIO voltage. This pin cannot

be left floating and must be tied either high or low for proper functionality.

8.3.3 Adjustable Rise Time

A capacitor to GND on the CTx pins sets the slew rate for each channel. To ensure desired performance, a

capacitor with a minimum voltage rating of 25 V should be used on the CTx pin. An approximate formula for the

relationship between CTx and slew rate is (the equation below accounts for 10% to 90% measurement on V_OUT

and does NOT apply for CTx = 0 pF. Use 表 1 to determine rise times for when CTx = 0 pF):

SR = 0.32´CT +13.7

where

•

SR = slew rate (in µs/V)

CT = the capacitance value on the CTx pin (in pF)

The units for the constant 13.7 is in µs/V.

(1)

Rise time can be calculated by multiplying the input voltage by the slew rate. 表 1 shows rise time values

measured on a typical device. Rise times shown below are only valid for the power-up sequence where V_INand

V_BIASare already in steady state condition, and the ON pin is asserted high.

表 1. Rise Time Values

RISE TIME (µs) 10% - 90%, C_L= 0.1µF, C_IN= 1µF, R_L= 10Ω

TYPICAL VALUES at 25°C, V_BIAS= 5V, 25V X7R 10% CERAMIC CAP

CTx (pF)

124

3.3V

1.8V

1.5V

1.2V

1.05V

0.8V

220

481

323

193

166

143

251

469

893

1920

4230

133

109

175

342

650

1411

3033

470

855

603

348

299

228

1000

2200

4700

10000

1724

3328

7459

16059

1185

2240

4950

10835

670

570

411

1308

2820

6040

1088

2429

5055

808

1748

3770

8.4 Device Functional Modes

表 2. Functional Table

ONx

VINx to VOUTx

VOUTx to GND

Off

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

9 Application and Implementation

注

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

9.1.1 Input Capacitor (Optional)

To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a

discharged load capacitor, a capacitor needs to be placed between VIN and GND. A 1-µF ceramic capacitor, C_IN,

placed close to the pins, is usually sufficient. Higher values of C_INcan be used to further reduce the voltage drop

in high-current application. When switching heavy loads, it is recommended to have an input capacitor about 10

times higher than the output capacitor to avoid excessive voltage drop.

9.1.2 Output Capacitor (Optional)

Due to the integrated body diode in the NMOS switch, a C_INgreater than C_Lis highly recommended. A C_L

greater than C_INcan cause V_OUTto exceed V_INwhen the system supply is removed. This could result in current

flow through the body diode from VOUT to VIN. A C_INto C_Lratio of 10 to 1 is recommended for minimizing V_IN

dip caused by inrush currents during start-up, however a 10 to 1 ratio for capacitance is not required for proper

functionality of the device. A ratio smaller than 10 to 1 (such as 1 to 1) could cause slightly more V_INdip upon

turnon due to inrush currents. This can be mitigated by increasing the capacitance on the CT pin for a longer rise

time (see Adjustable Rise Time).

9.1.3 V_INand V_BIASVoltage Range

For optimal R_ONperformance, make sure V_IN≤ V_BIAS. The device will still be functional if V_IN> V_BIASbut it will

exhibit R_ONgreater than what is listed in Electrical Characteristics. See 图 32 for an example of a typical device.

Notice the increasing R_ONas V_INexceeds V_BIASvoltage.

VBIAS = 2.5V

VBIAS = 3.3V

VBIAS = 3.6V

VBIAS = 4.2V

VBIAS = 5V

VBIAS = 5.5V

Temperature = 25£C, I_OUT= -200mA

0.8 1.2 1.6

2.4 2.8 3.2 3.6

V_IN(V)

4.4 4.8 5.2 5.6

C023

图 32. R_ONvs. V_IN(Single Channel)

TPS22966-Q1

www.ti.com.cn

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

Application Information (接下页)

9.1.4 Safe Operating Area (SOA)

The SOA curves in 图 33 show the continuous current carrying capability of the device versus ambient

temperature (T_A) to ensure reliable operation over 100,000 hours of device lifetime. Each curve represents a

specific percent of time that the switch is on.

The 100% curve represents use for a full 24 hours in a day. The 75% curve indicates 18 hours of use in a day

while the 12.5% curve shows 3 hours of use per day.

Examples on how to use this plot:

•

The application has an ambient temperature of 60°C and the switch will be on 100% of the time. The

maximum continuous current that can be applied is approximately 2.1 A.

The application requires the switch to be on 12.5% of the time and the current while on will be 3 A. The

maximum ambient temperature is approximately 100°C.

The application requires 2 A and will be operated at 70°C. The switch can be on for a maximum of 75% of the

time.

It is expected that most applications will not have specific use cases as defined in the examples above.

Different use cases can be combined to generate a more complete view of a specific application. This

example shows use under various conditions simplified to an average use case. The application requires

operation at 4 A for 25% of the time, 1 A for 25% of the time and is off the remaining 50% of the time.

Ambient temperature will vary from 25°C to 50°C. Will there be any limitations? The average current can be

calculated as (4 A × 25% + 1 A * 25% + 0 A * 50%). The average current calculates to be 1.25 A. Assuming

worst case temperature of 50°C, the resulting application is within the safe operating area.

5.00

4.00

3.00

2.00

1.00

100% On time

75% On time

VBIAS = 5.0 V

12.5% On time

0.00

-40

-15

110

Ambient Temperature (°C)

C002

图 33. Safe Operating Area

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

9.2 Typical Application

VIN1

ON1

VOUT1

Dual

C_IN

Power

C_L

R_L

CT1

CT2

OFF

Supply

GND

VBIAS

Dual

DC/DC

converter

VIN2

ON2

VOUT2

C_IN

C_L

OFF

GND

TPS22966-Q1

GND

图 34. Typical Application Schematic

9.2.1 Design Requirements

For this design example, use the parameters listed in 表 3 as the input parameters.

表 3. Design Parameters

DESIGN PARAMETER

Input voltage

VALUE

3.3 V

Bias voltage

5 V

Load capacitance (C_L)

Maximum acceptable inrush current

22 µF

400 mA

9.2.2 Detailed Design Procedure

When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (3.3 V in this

example). This charge arrives in the form of inrush current. Inrush current can be calculated using 公式 2:

Inrush Current = C × dV/dt

where

•

C = output capacitance

dV = output voltage

dt = rise time

(2)

The TPS22966-Q1 offers adjustable rise time for VOUT. This feature allows the user to control the inrush current

during turnon. The appropriate rise time can be calculated using 表 3 and the inrush current equation.

400 mA = 22 μF × 3.3 V/dt

dt = 181.5 μs

(3)

(4)

To ensure an inrush current of less than 400 mA, choose a CT value that will yield a rise time of more than 181.5

μs. See the oscilloscope captures in for an example of how the CT capacitor can be used to reduce inrush

current.

TPS22966-Q1

www.ti.com.cn

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

9.2.3 Application Curves

V_BIAS= 5 V ; V_IN= 3.3 V ; C_L= 22 μF

图 35. Inrush Current With CT = 0 pF

图 36. Inrush Current With CT = 220 pF

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

10 Power Supply Recommendations

The device is designed to operate from a VBIAS range of 2.5 V to 5.5 V and a VIN voltage range of 0 V to 5.5 V.

The power supply should be well regulated and placed as close to the device terminals as possible. It must be

able to withstand all transient and load current steps. In most situations, using an input capacitance of 1 uF is

sufficient to prevent the supply voltage from dipping when the switch is turned on. In cases where the power

supply is slow to respond to a large transient current or large load current step, additional bulk capacitance may

be required on the input.

The requirements for larger input capacitance can be mitigated by adding additional capacitance to the CT pin.

This will cause the load switch to turn on more slowly. Not only will this reduce transient inrush current, but it will

also give the power supply more time to respond to the load current step.

11 Layout

11.1 Layout Guidelines

For best performance, all traces should be as short as possible. To be most effective, the input and output

capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have

on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects

along with minimizing the case to ambient thermal impedance.

The maximum IC junction temperature should be restricted to 150°C under normal operating conditions. To

calculate the maximum allowable power dissipation, P_D(max)for a given output current and ambient temperature,

use the following equation:

T_J(max)- T_A

D(max)

θ_JA

where

•

P_D(max)= maximum allowable power dissipation

T_J(max)= maximum allowable junction temperature (150°C for the TPS22966-Q1)

T_A= ambient temperature

Θ_JA= junction to air thermal impedance. See Thermal Information section. This parameter is highly dependent

upon board layout.

(5)

图 37 shows an example of a layout. Notice the thermal vias located under the exposed thermal pad of the

device. This allows for thermal diffusion away from the device.

TPS22966-Q1

www.ti.com.cn

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

11.2 Layout Example

VOUT1 capacitor

CT1 capacitor

VIN1 capacitor

Thermal

relief vias

VIN2 capacitor

CT2 capacitor

VOUT2 capacitor

图 37. Layout Example

TPS22966-Q1

ZHCSBZ2B –DECEMBER 2013–REVISED MARCH 2020

www.ti.com.cn

12 器件和文档支持

12.1 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.2 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损

伤。

12.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12.4 接收文档更新通知

要接收文档更新通知，请导航至 ti.com.cn 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产

品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

12.5 支持资源

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

13 机械、封装和可订购信息

以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且

不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

TPS22966TDPURQ1

TPS22966TDPUTQ1

ACTIVE

WSON

DPU

3000 RoHS & Green

250 RoHS & Green

NIPDAU

Level-2-260C-1 YEAR

-40 to 105

966TQ1

NIPDAU

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

3-Mar-2020

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TPS22966TDPURQ1

TPS22966TDPUTQ1

WSON

DPU

3000

250

180.0

8.4

2.25

3.25

1.05

4.0

8.0

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

3-Mar-2020

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TPS22966TDPURQ1

TPS22966TDPUTQ1

WSON

DPU

3000

250

210.0

185.0

35.0

Pack Materials-Page 2

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邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

TPS22966TDPUTQ1 [TI]

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