TPS22995H-Q1 [TI]
具有可调上升时间的汽车类 5.5V 3A 16mΩ 负载开关;
| 型号： | TPS22995H-Q1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有可调上升时间的汽车类 5.5V 3A 16mΩ 负载开关 开关 |
| 文件： | 总18页 (文件大小：1016K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS22995H-Q1
ZHCSQ17A –JUNE 2022 –REVISED DECEMBER 2022
TPS22995H-Q1 5.5V、3A、19mΩ 导通电阻汽车类负载开关
1 特性
3 说明
• 符合面向汽车应用的AEC-Q100 标准：
TPS22995H-Q1 是一款单通道负载开关，包含 19mΩ
N 沟道 MOSFET，可在 0.8V 至 5.5V 的输入电压范围
内运行，支持的连续电流上限为3A。
– 温度等级1: –40 ° C 至125 ° C 、T A
• 输入电压范围(VIN)：0.8V 至5.5V
• 偏置电压(VBIAS): 1.5V 至5.5V
• 最大持续电流：3A
• 导通电阻(RON)：19mΩ（典型值）
• 通过外部电阻器实现可调压摆率控制
• 快速输出放电(QOD)：100Ω（典型值）
• 热关断
该开关由可与低压 GPIO 信号直接连接的开关输入
(ON) 控制。TPS22995H-Q1 在开关关闭时具有快速输
出放电功能，可将输出电压拉低至已知 0V 状态。此
外，该器件还提供可调节上升功能，旨在限制具有高容
性负载的浪涌电流。
TPS22995H-Q1 的引脚可耐受高湿度条件，这意味
着，无论哪个引脚与 GND 或电源之间发生 100kΩ 短
路，该器件都能正常运行。时序引脚 (RT) 受高湿度影
响时，预计时序保持在+/-20% 范围内。
• 耐湿引脚：
– 100kΩ接地短路
– 100kΩ电源短路
• ON 引脚智能下拉电阻(RPD,ON)：
• – ON ≥VIH (ION)：25nA（最大值）
– ON ≤VIL（RPD，ON）：500kΩ（典型值）
• 低功耗：
TPS22995H-Q1 采用 2.8mm × 2.9mm 6 引脚 SOT 封
装，间距为 0.5mm。该器件在自然通风环境下的额定
运行温度范围为–40°C 至+125°C。
– 导通状态(IQ)：10µA（典型值）
– 关闭状态(ISD)：0.1µA（典型值）
封装信息
封装(1)
器件型号
封装尺寸（标称值）
2 应用
TPS22995H-Q1
SOT-23（DDC，6） 2.80 mm × 2.90 mm
• 信息娱乐系统
• 仪表组
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
• ADAS
TPS22995H-Q1
VIN
VOUT
VOUT
VIN
Power Supply
Load
Charge
Pump
VBIAS
VBIAS
ON
RT
Thermal
Shutdown
RRT
ON
GND
OFF
ON
Control Logic
Driver
典型应用图
Smart
Pull
Down
RT
GND
方框图
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSGT2
TPS22995H-Q1
ZHCSQ17A –JUNE 2022 –REVISED DECEMBER 2022
www.ti.com.cn
Table of Contents
8.1 Overview................................................................... 11
8.2 Functional Block Diagram......................................... 11
8.3 Feature Description...................................................11
8.4 Device Functional Modes..........................................12
9 Application and Implementation..................................13
9.1 Application Information............................................. 13
9.2 Typical Application.................................................... 13
9.3 Power Supply Recommendations.............................14
9.4 Layout....................................................................... 14
10 Device and Documentation Support..........................16
10.1 接收文档更新通知................................................... 16
10.2 支持资源..................................................................16
10.3 Trademarks.............................................................16
10.4 Electrostatic Discharge Caution..............................16
10.5 术语表..................................................................... 16
11 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics (VBIAS = 5 V)..................... 5
6.6 Electrical Characteristics (VBIAS = 3.3 V).................. 5
6.7 Electrical Characteristics (VBIAS = 1.5 V).................. 6
6.8 Switching Characteristics............................................7
6.9 Typical Characteristics................................................9
7 Parameter Measurement Information..........................10
8 Detailed Description......................................................11
Information.................................................................... 16
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
Changes from Revision * (June 2022) to Revision A (December 2022)
Page
• 将器件状态从预告信息更改为量产数据.............................................................................................................1
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5 Pin Configuration and Functions
VBIAS
VIN
6
5
4
RT
1
2
3
VOUT
GND
ON
图5-1. TPS22995H-Q1 DDC Package 6-Pin SOT-23 (Top View)
表5-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
NO.
VBIAS
VIN
1
P
P
O
G
P
I
Device bias supply
Switch input
2
3
4
5
6
ON
Enable pin to turn on/off the switch
Device ground
GND
VOUT
RT
Switch output
Slew rate control through a resistor to GND
(1) I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX
UNIT
VIN
Input Voltage
6
6
6
3
V
V
V
A
VBIAS
VON, VRT
IMAX
Bias Voltage
Control Pin Voltage
Maximum Current
Internally
Limited
TJ
Junction temperature
Storage temperature
°C
°C
Tstg
150
–65
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per AEC Q100-002(1)
HBM ESD classification level 1C
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per AEC
Q100-011
±1000
CDM ESD classification level C5
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
0.8
1.5
0.8
0
NOM
MAX
5.5
UNIT
V
VIN
VBIAS
VIH
VIL
Input Voltage
Bias Voltage
5.5
V
ON Pin High Voltage Range
ON Pin Low Voltage Range
Ambient Temperature
5.5
V
0.35
125
V
TA
°C
–40
6.4 Thermal Information
TPS22995H-Q1
DDC
THERMAL METRIC(1)
UNIT
6 PINS
120.6
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
65.5
33.9
Junction-to-top characterization parameter
Junction-to-board characterization parameter
17.2
YJB
3.6
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIA
0.5
2
uA
uA
uA
uA
uA
uA
uA
uA
uA
VBIAS Shutdown Current
ON = 0V
–40°C to 85°C
–40°C to 125°C
25°C
S
10
20
20
IQ,VBIAS VBIAS Quiescent Current
ISD,VIN VIN Shutdown Current
ON > VIH
–40°C to 85°C
–40°C to 125°C
25°C
0.1
1
4
ON = 0V
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
ION
ON pin leakage
ON = VBIAS
0.1
19
Performance
25°C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
kΩ
VIN = 5 V, IOUT = -200 mA
VIN = 3.3 V, IOUT = -200 mA
VIN = 1.8 V, IOUT = -200 mA
VIN = 1.2 V, IOUT = -200 mA
VIN = 0.8 V, IOUT = -200 mA
26
29
–40°C to 85°C
–40°C to 125°C
25°C
19
19
19
19
25
28
–40°C to 85°C
–40°C to 125°C
25°C
RON
On-Resistance
25
28
–40°C to 85°C
–40°C to 125°C
25°C
25
28
–40°C to 85°C
–40°C to 125°C
25°C
25
28
–40°C to 85°C
–40°C to 125°C
25°C
500
100
RPD,ON Smart Pull Down Resistance
ON < VIL
ON < VIL
1000
150
–40°C to 125°C
25°C
kΩ
RQOD
Ω
QOD Resistance
RQOD
–40°C to 125°C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
190
°C
°C
TSDHYS Thermal Shutdown Hysteresis
6.6 Electrical Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIA
0.5
2
uA
uA
VBIAS Shutdown Current
ON = 0 V
–40°C to 85°C
–40°C to 125°C
S
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6.6 Electrical Characteristics (VBIAS = 3.3 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
25°C
8.5
uA
20
20
uA
uA
uA
uA
uA
uA
IQ,VBIAS VBIAS Quiescent Current
ON > VIH
–40°C to 85°C
–40°C to 125°C
25°C
0.1
1
4
ISD,VIN VIN Shutdown Current
ON = 0V
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
ION
ON pin leakage
ON = VBIAS
0.1
19
Performance
25°C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
kΩ
VIN = 3.3 V, IOUT = -200 mA
VIN = 1.8 V, IOUT = -200 mA
VIN = 1.2 V, IOUT = -200 mA
VIN = 0.8 V, IOUT = -200 mA
26
29
–40°C to 85°C
–40°C to 125°C
25°C
19
19
19
25
28
–40°C to 85°C
–40°C to 125°C
25°C
RON
On-Resistance
25
28
–40°C to 85°C
–40°C to 125°C
25°C
25
28
–40°C to 85°C
–40°C to 125°C
25°C
500
100
RPD,ON Smart Pull Down Resistance
ON < VIL
ON < VIL
1000
150
–40°C to 125°C
25°C
kΩ
Ω
RQOD
QOD Resistance
–40°C to 125°C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
190
°C
°C
TSDHYS Thermal Shutdown Hysteresis
6.7 Electrical Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIA
0.5
2
uA
uA
uA
uA
uA
uA
uA
uA
uA
VBIAS Shutdown Current
ON = 0 V
–40°C to 85°C
–40°C to 125°C
25°C
S
10
0.1
0.1
20
20
IQ,VBIAS VBIAS Quiescent Current
ISD,VIN VIN Shutdown Current
ON > VIH
–40°C to 85°C
–40°C to 125°C
25°C
1
4
ON = 0 V
–40°C to 85°C
–40°C to 125°C
-40°C to 125°C
ION
ON pin leakage
ON = VBIAS
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6.7 Electrical Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Performance
25°C
22
mΩ
VIN = 1.5 V, IOUT = -200 mA
30
34
–40°C to 85°C
–40°C to 125°C
25°C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
kΩ
kΩ
Ω
22
21
RON
On-Resistance
VIN = 1.2 V, IOUT = -200 mA
VIN = 0.8 V, IOUT = -200 mA
30
34
–40°C to 85°C
–40°C to 125°C
25°C
28
31
–40°C to 85°C
–40°C to 125°C
25°C
500
100
RPD,ON Smart Pull Down Resistance
ON < VIL
ON < VIL
800
150
190
–40°C to 125°C
25°C
RQOD
QOD Resistance
–40°C to 125°C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
°C
°C
TSDHYS Thermal Shutdown Hysteresis
6.8 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5.5 V
tON
Turn ON time
Rise time
264
129
us
us
us
us
us
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
tRISE
tD
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
Delay time
Fall time
127
tFALL
tOFF
VIN = 5 V
tON
1100
60.2
Turn OFF time
Turn ON time
Rise time
294
166
us
us
us
us
us
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
tRISE
tD
Delay time
Fall time
127
tFALL
tOFF
1110
60.3
Turn OFF time
VIN = 3.3 V
tON
Turn ON time
259
129
130
1120
62
us
us
us
us
us
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
tRISE
tD
Rise time
Delay time
Fall time
tFALL
tOFF
Turn OFF time
VIN = 1.8 V
tON
Turn ON time
Rise time
224
us
us
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
tRISE
89.1
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6.8 Switching Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
135
MAX
UNIT
us
tD
Delay time
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
tFALL
tOFF
Fall time
1120
65.2
us
Turn OFF time
us
VIN = 1.2 V
tON
Turn ON time
208
68.6
140
us
us
us
us
us
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
tRISE
tD
Rise time
Delay time
Fall time
tFALL
tOFF
1160
66.7
Turn OFF time
VIN = 0.8 V
tON
Turn ON time
197
53
us
us
us
us
us
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
RL = 100 Ω, CL = 10 uF, RT = 1 kΩ
tRISE
tD
Rise time
Delay time
Fall time
144
1190
69.5
tFALL
tOFF
Turn OFF time
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6.9 Typical Characteristics
10
9.75
9.5
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
–40 C
25 C
–40 C
25 C
125 C
85 C
125 C
9.25
9
8.75
8.5
8.25
8
7.75
7.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Bias Voltage (V)
Bias Voltage (V)
VIN = VBIAS
图6-1. Quiescent Current vs Bias Voltage
VIN = VBIAS
图6-2. Shutdown Current vs Bias Voltage
30
28
26
24
22
20
18
16
116
114
112
110
108
106
104
102
100
98
–40 C
25 C
–40 C
25 C
85 C
85 C
125 C
125 C
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Bias Voltage (V)
Bias Voltage (V)
VIN = VBIAS
VIN = VBIAS
图6-3. On-Resistance vs Bias Voltage
图6-4. QOD Resistance vs Bias Voltage
175
170
165
160
155
150
145
140
135
130
125
200
180
160
140
120
100
80
–40 C
25 C
–40 C
25 C
85 C
85 C
125 C
125 C
60
40
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
Input Voltage (V)
VIN = VBIAS
图6-5. Delay Time vs Bias Voltage
VIN = VBIAS
图6-6. Rise Time vs Bias Voltage
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7 Parameter Measurement Information
图7-1. TPS22995H-Q1 Timing Parameters
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8 Detailed Description
8.1 Overview
The TPS22995H-Q1 is a 5.5-V, 3-A load switch in a 6-pin SOT-23 package. To reduce voltage drop for low
voltage and high-current rails, the device implements a low-resistance, 19-mΩ N-channel MOSFET, which
reduces the drop-out voltage through the device.
The device has a configurable slew rate, which helps reduce or eliminate power supply droop because of large
inrush currents. The slew rate can be configured by connecting a resistor to ground to the RT pin. The
TPS22995H-Q1 also integrates a Quick Output Discharge circuit that is activated when the switch is turned off,
pulling the output voltage down to a known 0-V state.
TPS22995H-Q1 increases circuit robustness by integrating tolerance to high humidity environments. When the
timing pin (RT) is affected by high humidity, timing is expected to stay within +/–20%. Additionally, if the device
experiences a 100-kΩshort from any pin to GND or power, the device continues to function.
8.2 Functional Block Diagram
VOUT
VIN
Charge
Pump
VBIAS
Thermal
Shutdown
ON
Control Logic
Driver
Smart
Pull
Down
RT
GND
8.3 Feature Description
8.3.1 ON and OFF Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When power is first applied to VIN, a Smart Pulldown is used to
keep the ON pin from floating until the system sequencing is complete. After the ON pin is deliberately driven
high (≥ VIH), the Smart Pulldown is disconnected to prevent unnecessary power loss. See the below table
when the ON Pin Smart Pulldown is active.
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表8-1. On Pin Control
ON Pin Voltage
≤VIL
ON Pin Function
Pulldown active
No Pulldown
≥VIH
8.3.2 Quick Output Discharge (QOD)
TPS22995H-Q1 integrates Quick Output Discharge. When the switch is disabled, a discharge resistor is
connected between VOUT and GND. This resistor has a typical value of 100 Ω and prevents the output from
floating while the switch is disabled
8.3.3 Adjustable Slew Rate
A resistor to GND on the RT pin sets the slew rate, and the higher the resistor the lower the slew rate. Rise times
are shown below.
表8-2. Rise Time vs RT vs VIN
RT Resistor
GND
VIN = 5 V
102 µs
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
79 µs
55 µs
89 µs
42 µs
68 µs
33 us
53 us
166 µs
790 µs
1520 µs
4860 µs
129 µs
607 µs
1180 µs
3750 µs
1 kΩ
5 kΩ
10 kΩ
Open
415 µs
800 µs
2560 µs
318 µs
613 µs
1960 µs
242 us
465 us
1490 us
The following equation can be used to estimate the rise time for different VIN and RT resistors:
tR = (0.0246 VIN + 0.0308) × RT + 3.3219 VIN + 6.7312
where
• tR = Rise time in µs.
• VIN = Input voltage in V.
• RT = RT Resistor in Ω.
8.3.4 Thermal Shutdown
When the device temperature reaches 170°C (typical), the device shuts itself off to prevent thermal damage.
After the device cools off by about 20°C, it turns back on. If the device is kept in a thermally stressful
environment, then the device oscillates between these two states until it can keep its temperature below the
thermal shutdown point.
8.4 Device Functional Modes
表8-3. Device Functional Modes
ON
L
Fault Condition
VOUT State
Hi-Z
N/A
H
None
VIN through RON
Hi-Z
X
Thermal shutdown
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9 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The input to output voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN and VBIAS condition of the device. See the RON specification in the
Electrical Characteristics (VBIAS = 5 V) table of this data sheet. After the RON of the device is determined based
upon the VIN and VBIAS conditions, use the below equation to calculate the input to output voltage drop.
DV = ILOAD ì RON
where
(1)
• ΔV is the voltage drop from VIN to VOUT.
• ILOAD is the load current.
• RON is the on-resistance of the device for a specific VIN and VBIAS.
• An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
9.2 Typical Application
This typical application demonstrates how the TPS22995H-Q1 device can be used to limit start-up inrush
current.
TPS22995H-Q1
VOUT
VIN
Power Supply
Load
VBIAS
ON
RT
RRT
ON
GND
OFF
图9-1. TPS22995H-Q1 Application Schematic
9.2.1 Design Requirements
表9-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VBIAS
5.0 V
5.0 V
VIN
CL
47 μF
None
RL
Maximum acceptable inrush current
200 mA
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9.2.2 Detailed Design Procedure
When the switch is enabled, the output capacitors must be charged up from 0 V to VIN. This charge arrives in the
form of inrush current. Use the equation below to calculate inrush current.
IINRUSH = CL × dVOUT/dt
(2)
where
• CL is the output capacitance.
• dVOUT is the change in VOUT during the ramp up of the output voltage when device is enabled.
• dt is the rise time in VOUT during the ramp up of the output voltage when the device is enabled.
The TPS22995H-Q1 offers an adjustable rise time for VOUT, allowing the user to control the inrush current
during turn-on. The appropriate rise time can be calculated using the design requirements and the inrush current
equation as shown below.
200 mA = 47uF × 5 V/dt
(3)
where
dt = 1175 us
(4)
The TPS22995H-Q1 has very fast rise times with RT pin grounded. The typical rise time is 147 μs at VBIAS
=
5V, VIN = 5 V, RL = 100 Ω, and CL = 0.1 µF. This rise time results in an inrush current of 1.59 A. According to the
rise time table, using RT = 10 kΩ results in a rise time of 1520 us, which limits the inrush current to 154 mA.
Alternatively, the rise time equation can be used to determine the resistor need.
9.3 Power Supply Recommendations
The TPS22995H-Q1 device is designed to operate with a VIN range of 0.8 V to 5.5 V. The VIN power supply
must be well regulated and placed as close to the device terminal as possible. The power supply must be able to
withstand all transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is
sufficient to prevent the supply voltage from dipping when the switch is turned on. In cases where the power
supply is slow to respond to a large transient current or large load current step, additional bulk capacitance can
be required on the input.
9.4 Layout
9.4.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances can have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
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9.4.2 Layout Example
Via to GND
VBIAS
RRT
VBIAS
RT
VIN
VOUT
ON
GND
From GPIO
图9-2. Layout Example (SOT)
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
10.2 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
10.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
10.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.5 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22995HQDDCRQ1
ACTIVE SOT-23-THIN
DDC
6
3000 RoHS & Green
Call TI
Level-1-260C-UNLIM
-40 to 125
995H
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
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