TPS54336DDAR [TI]

4.5V to 28V Input, 3A Output, Synchronous SWIFT Step-Down Voltage Regulator; 4.5V至28V输入,3A输出,同步SWIFT降压稳压器
TPS54336DDAR
型号: TPS54336DDAR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

4.5V to 28V Input, 3A Output, Synchronous SWIFT Step-Down Voltage Regulator
4.5V至28V输入,3A输出,同步SWIFT降压稳压器

稳压器
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TPS54335  
TPS54336  
www.ti.com  
SLVSC03B MAY 2013REVISED NOVEMBER 2013  
4.5V to 28V Input, 3A Output, Synchronous SWIFT™ Step-Down Voltage Regulator  
Check for Samples: TPS54335, TPS54336  
1
FEATURES  
DESCRIPTION  
The TPS54335/54336 is a 3A, low quiescent supply  
current (IQ), synchronous DC-DC converter IC  
(integrated circuit) with up to 28V input support.  
2
Two 128mΩ/84mΩ MOSFETs for 3A  
Continuous Output Current  
TPS54335: Internal 2ms Soft-start,  
50kHz–1.5MHz Adjustable Frequency  
By integrating MOSFETs and by employing current  
mode switching control, the TPS54335/54336 offers  
compact designs on PCB (printed circuit board)  
reducing external component count.  
TPS54336: Adjustable Soft-start, Fixed 340kHz  
Frequency  
Low 2µA Shutdown Quiescent Current  
Efficiency is maximized through the integrated  
128mΩ/84mΩ MOSFETs, low IQ and pulse skipping  
at light loads. Using the enable pin, shutdown supply  
current is reduced to 2 μA by entering a shutdown  
mode.  
0.8V Internal Voltage Reference with ±0.8%  
Accuracy at Room Temperature and ±1.5%  
Accuracy Over Temperature  
Fixed-Frequency Current Mode Control  
Pulse Skipping Boosts Efficiency at Light  
Loads  
This step-down (buck) converter provides accurate  
regulation for a variety of loads with a well-regulated  
voltage reference 1.5% over temperature.  
Overcurrent Protection for Both MOSFETs  
with Hiccup Mode for Severe Fault Conditions  
Cycle by cycle current limiting on the high-side  
MOSFET protects the TPS54335/54336 in overload  
situations and is enhanced by a low-side sourcing  
current limit which prevents current runaway. There is  
also a low-side sinking current limit which turns off  
the low-side MOSFET to prevent excessive reverse  
current. Hiccup protection will be triggered if the  
overcurrent condition has persisted for longer than  
the preset time. Thermal hiccup protection disables  
the part when die temperature exceeds thermal  
shutdown temperature and enables the part again  
after the built-in thermal hiccup time.  
Thermal Shutdown and Overvoltage Transition  
Protection  
Available in Easy-to-Use 8-Pin SOIC  
PowerPAD™ and 10-pin SON  
Monotonic Start-Up into Pre-biased Outputs  
APPLICATIONS  
Consumer Applications such as a Digital TV  
(DTV), Set Top Box (STB, DVD/Blu-ray Player),  
LCD Display, CPE (Cable Modem, WiFi  
Router), DLP Projectors, Smart Meters  
.
.
Battery Chargers  
Industrial and Car Audio Power Supplies  
5V,12V and 24V Distributed Power Bus Supply  
SIMPLIFIED SCHEMATICS  
VIN  
C1  
VIN  
VIN  
VIN  
C1  
TPS54335  
TPS54336  
CBOOT  
LO  
CBOOT  
LO  
BOOT  
PH  
BOOT  
PH  
EN  
EN  
VOUT  
VOUT  
RT  
SS  
CO  
CO  
COMP  
COMP  
RO1  
RO1  
CC  
CC  
VSENSE  
VSENSE  
C2  
C2  
RRT  
RC  
RC  
RO2  
RO2  
CSS  
GND  
GND  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
PowerPAD, SWIFT are trademarks of Texas Instruments.  
UNLESS OTHERWISE NOTED this document contains  
PRODUCTION DATA information current as of publication date.  
Products conform to specifications per the terms of Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2013, Texas Instruments Incorporated  
 
 
 
 
 
 
 
TPS54335  
TPS54336  
SLVSC03B MAY 2013REVISED NOVEMBER 2013  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION(1) (2)  
TJ  
PACKAGE  
PART NUMBER  
TPS54335DDA  
TPS54336DDA  
TPS54335DRC  
TPS54336DRC  
8-Pin SOIC PowerPAD™  
–40°C to +150°C  
10-pin SON  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) The DDA package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54335DDAR). See applications  
section of data sheet for layout information.  
ABSOLUTE MAXIMUM RATINGS(1) (2)  
MIN  
–0.3  
–0.3  
-0.3  
–0.3  
–0.3  
–0.3  
–0.3  
0
MAX  
UNIT  
V
VIN  
30  
EN  
6
V
BOOT  
(PH+7.5)  
V
Input voltage  
VSENSE  
3
V
COMP  
3
V
RT  
3
V
SS  
3
V
BOOT-PH  
PH  
7.5  
V
Output voltage  
–1  
30  
V
PH 10ns Transient  
–3.5  
–0.2  
100  
100  
30  
V
Vdiff (GND to exposed Thermal Pad)  
EN  
0.2  
V
100  
µA  
µA  
A
Source current  
RT  
100  
PH  
Current Limit  
PH  
Current Limit  
A
Sink current  
COMP  
200  
2
200  
2
µA  
kV  
V
Electrostatic discharge (HBM) QSS 009-105 (JESD22-A114A)  
Electrostatic discharge (CDM) QSS 009-147 (JESD22-C101B.01)  
Operating junction temperature  
500  
–40  
–65  
500  
150  
150  
°C  
°C  
Storage temperature  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. The machine model is a 200-pF  
capacitor discharged directly into each pin.  
2
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TPS54335  
TPS54336  
www.ti.com  
SLVSC03B MAY 2013REVISED NOVEMBER 2013  
THERMAL INFORMATION  
TPS54335/6  
UNITS  
THERMAL METRIC(1)  
DDA (8 PINS)  
DRC (10 PINS)  
θJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
42.1  
50.9  
31.8  
8
43.9  
55.4  
18.9  
0.7  
θJCtop  
θJB  
°C/W  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
ψJB  
13.5  
7.1  
19.1  
5.3  
θJCbot  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
ELECTRICAL CHARACTERISTICS  
The Electrical Ratings specified in this section will apply to all specifications in this document unless otherwise noted. These  
specifications will be interpreted as conditions that will not degrade the device’s parametric or functional specifications for the  
life of the product containing it. TJ = –40°C to +150°C, VIN =4.5 TO 28V, (unless otherwise noted)  
PARAMETERS  
SUPPLY VOLTAGE AND UVLO (VIN PIN)  
Operating input voltage  
Input UVLO threshold  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
4.5  
28  
4.5  
400  
10  
V
V
Rising Vin  
EN = 0V  
4
180  
2
Input UVLO hysteresis  
mV  
µA  
µA  
VIN Shutdown supply current  
VIN Operating – Non switching supply current  
ENABLE (EN PIN)  
VSENSE = 810 mV  
310  
800  
Enable threshold  
Rising  
1.21  
1.17  
1.15  
3.3  
1.28  
V
V
Enable threshold  
Falling  
1.1  
Input current  
EN= 1.1 V  
EN= 1.3 V  
µA  
µA  
Hysteresis current  
VOLTAGE REFERENCE  
TJ =25°C  
0.7936  
0.788  
0.8 0.8064  
Reference  
V
0.8  
0.812  
MOSFET  
BOOT-PH= 3 V  
BOOT-PH= 6 V  
VIN = 12V  
160  
128  
84  
280  
230  
170  
mΩ  
mΩ  
mΩ  
High side switch resistance(1)  
Low Side Switch Resistance(1)  
ERROR AMPLIFIER  
Error amplifier transconductance (gm)  
Error amplifier source/sink  
–2 µA < ICOMP < 2 µA V(COMP) = 1 V  
V(COMP) = 1 V, 100 mV Overdrive  
1300  
100  
0.5  
8
µmhos  
µA  
Start switching peak current threshold  
COMP to Iswitch gm  
A
A/V  
CURRENT LIMIT  
High side switch current limit threshold  
Low side switch sourcing current limit  
Low side switch sinking current limit  
Hiccup wait time  
4
4.9  
4.7  
6.5  
6.1  
A
A
3.5  
0
A
512  
16384  
Cycles  
Cycles  
Hiccup time before re-start  
(1) Measured at pins  
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TPS54335  
TPS54336  
SLVSC03B MAY 2013REVISED NOVEMBER 2013  
www.ti.com  
ELECTRICAL CHARACTERISTICS (continued)  
The Electrical Ratings specified in this section will apply to all specifications in this document unless otherwise noted. These  
specifications will be interpreted as conditions that will not degrade the device’s parametric or functional specifications for the  
life of the product containing it. TJ = –40°C to +150°C, VIN =4.5 TO 28V, (unless otherwise noted)  
PARAMETERS  
THERMAL SHUTDOWN  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Thermal shutdown  
160  
175  
10  
°C  
°C  
Thermal shutdown hysterisis  
Thermal shutdown hiccup time  
PH (PH PIN)  
32768  
Cycles  
Minimum on time  
Measured at 90% to 90% of VIN, IPH = 2A  
94  
0
145  
3
ns  
%
Minimum off time  
BOOT-PH 3V  
BOOT (BOOT PIN)  
BOOT-PH UVLO  
2.1  
V
SWITCHING FREQUENCY  
TPS54335  
50  
384  
40  
1500  
576  
60  
kHz  
kHz  
kHz  
kHz  
kHz  
TPS54335, Rrt = 100 kΩ  
TPS54335, Rrt = 1000 k, –40°C~105°C  
TPS54335, Rrt = 30 kΩ  
TPS54336  
480  
50  
Switching frequency range  
1200  
272  
1500  
340  
1800  
408  
Internal switching frequency  
SLOW START  
Internal slow start time  
Slow start charge current  
TPS54335  
TPS54336  
2
ms  
µA  
2.3  
PIN ASSIGNMENTS  
8-PIN SOIC WITH THERMAL PAD  
(TOP VIEW)  
TPS54335  
TPS54336  
8
7
6
5
SS  
EN  
8
7
6
5
BOOT  
1
2
3
4
BOOT  
RT  
EN  
1
2
3
4
VIN  
PH  
VIN  
PH  
PowerPAD  
(9)  
PowerPAD  
(9)  
COMP  
COMP  
VSENSE  
GND  
VSENSE  
GND  
PIN FUNCTIONS  
PIN  
DESCRIPTION  
NAME  
NUMBER  
A bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor is below the  
minimum required by the output device, the output is forced to switch off until the capacitor is  
refreshed.  
BOOT  
1
Vin  
2
3
4
5
Input supply voltage, 4.5 V to 28 V.  
The source of the internal high side power MOSFET.  
Ground.  
PH  
GND  
VSENSE  
COMP  
EN  
Inverting node of the gm error amplifier.  
Error amplifier output, and input to the output switch current comparator. Connect frequency  
compensation components to this pin.  
6
7
Enable pin. Float to enable.  
4
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TPS54335  
TPS54336  
www.ti.com  
SLVSC03B MAY 2013REVISED NOVEMBER 2013  
PIN FUNCTIONS (continued)  
PIN  
DESCRIPTION  
NAME  
NUMBER  
RT (TPS54335)  
8
Connect to an external timing resistor to adjust the switching frequency of the device.  
Slow-start and tracking. An external capacitor connected to this pin sets the internal voltage reference  
rise time. The voltage on this pin overrides the internal reference.  
SS (TPS54336)  
8
GND pin should be connected to the exposed thermal pad for proper operation. This thermal pad  
should be connected to any internal PCB ground plane using multiple vias for good thermal  
performance.  
PowerPAD™  
9
10-PIN SON WITH THERMAL PAD  
(TOP VIEW)  
TPS54335  
TPS54336  
DRC PACKAGE  
(TOP VIEW)  
DRC PACKAGE  
(TOP VIEW)  
1
2
3
10  
9
1
VIN  
PH  
SS  
BOOT  
EN  
10  
9
VIN  
RT  
BOOT  
EN  
2
3
PH  
Exposed  
Thermal Pad  
(11)  
Exposed  
Thermal Pad  
(11)  
8
GND  
8
GND  
4
5
7
GND  
GND  
COMP  
4
5
7
GND  
GND  
COMP  
6 VSENSE  
6 VSENSE  
PIN FUNCTIONS  
PIN  
DESCRIPTION  
NAME  
VIN  
NUMBER  
1
Input supply voltage, 4.5 V to 28 V.  
PH  
2
3, 4, 5  
6
The source of the internal high side power MOSFET.  
Ground.  
GND  
VSENSE  
Inverting node of the gm error amplifier.  
Error amplifier output, and input to the output switch current comparator. Connect frequency  
compensation components to this pin.  
COMP  
EN  
7
8
Enable pin. Float to enable.  
A bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor is below the  
minimum required by the output device, the output is forced to switch off until the capacitor is  
refreshed.  
BOOT  
9
RT (TPS54335)  
SS (TPS54336)  
10  
10  
Connect to an external timing resistor to adjust the switching frequency of the device.  
Slow-start and tracking. An external capacitor connected to this pin sets the internal voltage reference  
rise time. The voltage on this pin overrides the internal reference.  
GND pin should be connected to the exposed thermal pad for proper operation. This thermal pad  
should be connected to any internal PCB ground plane using multiple vias for good thermal  
performance.  
PowerPAD™  
11  
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TPS54335  
TPS54336  
SLVSC03B MAY 2013REVISED NOVEMBER 2013  
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FUNCTIONAL BLOCK DIAGRAM  
VIN  
EN  
Thermal  
Hiccup  
UVLO  
Enable  
Ip  
Ih  
Comparator  
Shutdown  
Logic  
Hiccup  
Shutdown  
Enable  
Threshold  
OV  
Boot  
Charge  
Current  
Sense  
Minimum Clamp  
Pulse Skip  
ERROR  
AMPLIFIER  
VSENSE  
BOOT  
Boot  
UVLO  
SS  
(TPS54336)  
HS MOSFET  
Current  
Comparator  
Voltage  
Reference  
Power Stage  
& Deadtime  
Control  
PH  
Logic  
Slope  
Compensation  
VIN  
Regulator  
Hiccup  
Shutdown  
LS MOSFET  
Current Limit  
Maximum  
Clamp  
Overload  
Recovery  
Oscillator  
Current  
Sense  
GND  
RT  
COMP  
EXPOSED THERMAL PAD  
(TPS54335)  
6
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TPS54335  
TPS54336  
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SLVSC03B MAY 2013REVISED NOVEMBER 2013  
TYPICAL CHARACTERISTICS  
HIGH-SIDE MOSFET ON RESISTANCE  
LOW-SIDE MOSFET ON RESISTANCE  
vs  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
210  
190  
170  
150  
130  
110  
90  
140  
130  
120  
110  
100  
90  
80  
70  
60  
VIN = 12 V  
VIN = 12 V  
70  
50  
±50  
±50  
±50  
±25  
±25  
±25  
0
25  
50  
75  
100  
125  
150  
±50  
±50  
±50  
±25  
±25  
±25  
0
25  
50  
75  
100  
125  
150  
C001  
C002  
TJ - Junction Temperature (ƒC)  
TJ - Junction Temperature (ƒC)  
Figure 1.  
Figure 2.  
VOLTAGE REFERENCE  
vs  
JUNCTION TEMPERATURE  
OSCILLATOR FREQUENCY  
vs  
JUNCTION TEMPERATURE  
0.808  
0.804  
0.800  
0.796  
0.792  
495  
490  
485  
480  
475  
470  
465  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
C003  
C004  
TJ - Junction Temperature (ƒC)  
TJ - Junction Temperature (ƒC)  
Figure 3.  
Figure 4.  
UVLO THRESHOLD  
vs  
HYSTERESIS CURRENT  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
1.230  
1.225  
1.220  
1.215  
1.210  
3.50  
3.45  
3.40  
3.35  
3.30  
3.25  
3.20  
VIN = 12 V  
125  
VIN = 12 V  
0
25  
50  
75  
100  
150  
0
25  
50  
75  
100  
125  
150  
C005  
C006  
TJ - Junction Temperature (ƒC)  
TJ - Junction Temperature (ƒC)  
Figure 5.  
Figure 6.  
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TPS54336  
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TYPICAL CHARACTERISTICS (continued)  
PULLUP CURRENT  
vs  
JUNCTION TEMPERATURE  
NON-SWITCHING OPERATING QUIESCENT CURRENT  
vs  
INPUT VOLTAGE  
1.2  
1.175  
1.15  
400  
350  
300  
250  
200  
1.125  
1.1  
T = -40ƒC  
J
T = 25ƒC  
J
VIN = 12 V  
100 125  
T = 150ƒC  
J
±50  
±25  
0
25  
50  
75  
150  
4
8
12  
16  
20  
24  
28  
C007  
C008  
TJ - Junction Temperature (ƒC)  
VIN - Input Voltage (V)  
Figure 7.  
Figure 8.  
SHUTDOWN QUIESCENT CURRENT  
SS CHARGE CURRENT  
vs  
JUNCTION TEMPERATURE  
vs  
INPUT VOLTAGE  
10  
8
2.40  
2.35  
2.30  
2.25  
2.20  
T=-40ƒC
J
T = 25ƒC  
J
T = 150ƒC  
J
6
4
2
EN = 0 V  
0
4
8
12  
16  
20  
24  
28  
±50  
±25  
0
25  
50  
75  
100  
125  
150  
C009  
C010  
VIN - Input Voltage (V)  
TJ - Junction Temperature (ƒC)  
Figure 9.  
Figure 10.  
MINIMUM CONTROLLABLE ON TIME  
MINIMUM CONTROLLABLE DUTY RATIO  
vs  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
120  
110  
100  
90  
6.0  
5.0  
4.0  
3.0  
80  
VIN = 12 V  
125  
VIN = 12 V  
125  
70  
±50  
±25  
0
25  
50  
75  
100  
150  
±50  
±25  
0
25  
50  
75  
100  
150  
C011  
C012  
TJ - Junction Temperature (ƒC)  
TJ - Junction Temperature (ƒC)  
Figure 11.  
Figure 12.  
8
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TPS54336  
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SLVSC03B MAY 2013REVISED NOVEMBER 2013  
TYPICAL CHARACTERISTICS (continued)  
BOOT-PH UVLO THRESHOLD  
vs  
JUNCTION TEMPERATURE  
CURRENT LIMIT THRESHOLD  
vs  
INPUT VOLTAGE  
2.300  
2.200  
2.100  
2.000  
6.0  
5.5  
5.0  
4.5  
4.0  
TJ=-40ƒC
T = 25ƒC  
J
T = 150ƒC  
J
±50  
±25  
0
25  
50  
75  
100  
125  
150  
4
8
12  
16  
20  
24  
28  
C013  
C014  
TJ - Junction Temperature (ƒC)  
VIN - Input Voltage (V)  
Figure 13.  
Figure 14.  
OVERVIEW  
The device is a 28-V, 3-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To  
improve performance during line and load transients the device implements a constant frequency, peak current  
mode control which reduces output capacitance and simplifies external frequency compensation design.  
The device has been designed for safe monotonic startup into pre-biased loads. It has a typical default start up  
voltage of 4.0 V. The EN pin has an internal pull-up current source that can provide a default condition when the  
EN pin is floating for the device to operate. The total operating current for the device is typically 310µA when not  
switching and under no load. When the device is disabled, the supply current is less than 5μA.  
The integrated 128m/84mMOSFETs allow for high efficiency power supply designs with continuous output  
currents up to 3 amperes.  
The device reduces the external component count by integrating the boot recharge diode. The bias voltage for  
the integrated high side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor  
voltage is monitored by an UVLO circuit and turns off the high side MOSFET when the voltage falls below a  
preset threshold. The output voltage can be stepped down to as low as the 0.8 V reference.  
The device minimizes excessive output over-voltage transients by taking advantage of the over-voltage power  
good comparator. When the regulated output voltage is greater than 106% of the nominal voltage, the over-  
voltage comparator is activated, and the high side MOSFET is turned off and masked from turning on until the  
output voltage is lower than 104%.  
The TPS54335 has wide switching frequency of 50 kHz to 1500 kHz which allows for efficiency and size  
optimization when selecting the output filter components. The internal 2ms slow start time is implemented to  
minimize inrush currents.  
The TPS54336 is fixed at 340kHz. It is able to adjust the slow start time by the SS pin.  
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DETAILED DESCRIPTION  
FIXED FREQUENCY PWM CONTROL  
The device uses a fixed frequency, peak current mode control. The output voltage is compared through external  
resistors on the VSENSE pin to an internal voltage reference by an error amplifier which drives the COMP pin.  
An internal oscillator initiates the turn on of the high side power switch. The error amplifier output is compared to  
the high side power switch current. When the power switch current reaches the COMP voltage level the high side  
power switch is turned off and the low side power switch is turned on. The COMP pin voltage increases and  
decreases as the output current increases and decreases. The device implements a current limit by clamping the  
COMP pin voltage to a maximum level and also implements a minimum clamp for improved transient response  
performance.  
LIGHT LOAD OPERATION  
The device monitors the peak switch current of the high-side MOSFET. Once the peak switch current is lower  
than typically 0.5A, the device stops switching to boost the efficiency until the peak switch current again rises  
higher than typically 0.5A.  
VOLTAGE REFERENCE  
The voltage reference system produces a precise ±1.5% voltage reference over temperature by scaling the  
output of a temperature stable bandgap circuit.  
ADJUSTING THE OUTPUT VOLTAGE  
The output voltage is set with a resistor divider from the output node to the VSENSE pin. It is recommended to  
use divider resistors with 1% tolerance or better. Start with a 10 kΩ for the upper resistor divider, R1 and  
useEquation 1 to calculate R2. To improve efficiency at light loads consider using larger value resistors. If the  
values are too high the regulator is more susceptible to noise and voltage errors from the VSENSE input current  
are noticeable.  
VREF  
R2 =  
´R1  
VOUT - VREF  
(1)  
ENABLE AND ADJUSTING UNDERVOLTAGE LOCKOUT  
The EN pin provides electrical on/off control of the device. Once the EN pin voltage exceeds the threshold  
voltage, the device starts operation. If the EN pin voltage is pulled below the threshold voltage, the regulator  
stops switching and enters low Iq state.  
The EN pin has an internal pull-up current source, allowing the user to float the EN pin for enabling the device. If  
an application requires controlling the EN pin, use open drain or open collector output logic to interface with the  
pin.  
The device implements internal UVLO circuitry on the VIN pin. The device is disabled when the VIN pin voltage  
falls below the internal VIN UVLO threshold. The internal VIN UVLO threshold has a hysteresis of 180mV.  
If an application requires a higher UVLO threshold on the VIN pin, then the EN pin can be configured as shown  
in Figure 15. When using the external UVLO function it is recommended to set the hysteresis to be greater than  
500mV.  
The EN pin has a small pull-up current Ip which sets the default state of the pin to enable when no external  
components are connected. The pull-up current is also used to control the voltage hysteresis for the UVLO  
function since it increases by Ih once the EN pin crosses the enable threshold. The UVLO thresholds can be  
calculated using Equation 2, and Equation 3.  
10  
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TPS54335/6  
VIN  
EN  
ip  
i
h
R 1  
R 2  
Figure 15. Adjustable VIN Undervoltage Lock Out  
æ
ç
è
ö
÷
ø
VENFALLING  
VENRISING  
VSTART  
- VSTOP  
R1 =  
æ
ö
÷
ø
VENFALLING  
I
1-  
+I  
p ç  
h
VENRISING  
è
(2)  
(3)  
R1´ VENFALLING  
VSTOP - VENFALLING + R1(Ip + Ih )  
R2 =  
Where Ih = 3.3 μA, Ip = 1.15 μA, VENRISING = 1.21 V, VENFALLING = 1.17 V  
ERROR AMPLIFIER  
The device has a transconductance amplifier. The error amplifier compares the VSENSE voltage to the lower of  
the internal slow start voltage or the internal 0.8 V voltage reference. The transconductance of the error amplifier  
is 1300μA/V typically. The frequency compensation components are placed between the COMP pin and ground.  
SLOPE COMPENSATION AND OUTPUT CURRENT  
The device adds a compensating ramp to the switch current signal. This slope compensation prevents sub-  
harmonic oscillations as duty cycle increases. The available peak inductor current remains constant over the full  
duty cycle range.  
SAFE START-UP INTO PRE-BIASED OUTPUTS  
The device has been designed to prevent the low-side MOSFET from discharging a pre-biased output. During  
monotonic pre-biased startup, both high-side and low-side MOSFETs are not allowed to be turned on until the  
internal slow-start voltage (TPS54335), or SS pin voltage (TPS54336) is higher than VSENSE pin voltage.  
BOOTSTRAP VOLTAGE (BOOT)  
The device has an integrated boot regulator, and requires a small ceramic capacitor between the BOOT and PH  
pins to provide the gate drive voltage for the high-side MOSFET. The boot capacitor is charged when the BOOT  
pin voltage is less than VIN and BOOT-PH voltage is below regulation. The value of this ceramic capacitor  
should be 0.1 μF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher  
is recommended because of the stable characteristics over temperature and voltage. When the voltage between  
BOOT and PH drops below the BOOT-PH UVLO threshold, which is typically 2.1V, the high-side MOSFET is  
turned off and the low-side MOSFET is turned on allowing the boot capacitor to be recharged.  
ADJUSTABLE SWITCHING FREQUENCY (TPS54335 ONLY)  
To determine the RT resistance for a given switching frequency, use Equation 4 or the curve in Figure 16. To  
reduce the solution size one would set the switching frequency as high as possible, but tradeoffs of the supply  
efficiency and minimum controllable on time should be considered.  
Rrt(kW) = 55300´Fsw(kHz)-1.025  
(4)  
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RT SET RESISTOR  
vs  
OSCILLATOR FREQUENCY  
1000  
800  
600  
400  
200  
0
0
250  
500  
750  
1000  
1250  
1500  
Fsw - Oscillator Frequency - kHz  
Figure 16. RT Set Resistor vs Switching Frequency  
SLOW START (TPS54336 ONLY)  
The device uses the lower voltage of the internal voltage reference or the SS pin voltage as the reference  
voltage and regulates the output accordingly. A capacitor on the SS pin to ground implements a slow start time.  
The device has an internal pull-up current source of 2.3 μA that charges the external slow start capacitor. The  
calculations for the slow start time (Tss, 10% to 90%) and slow start capacitor (Css) are shown in Equation 5.  
The voltage reference (Vref) is 0.8 V and the slow start charge current (Iss) is 2.3μA.  
Css(nF) ´ Vref(V)  
Tss(ms) =  
Iss(mA)  
(5)  
When the input UVLO is triggered, the EN pin is pulled below 1.21V, or a thermal shutdown event occurs the  
device stops switching and enters low current operation. At the subsequent power up, when the shutdown  
condition is removed, the device does not start switching until it has discharged its SS pin to ground ensuring  
proper soft start behavior.  
OUTPUT OVERVOLTAGE PROTECTION (OVP)  
The device incorporates an output overvoltage protection (OVP) circuit to minimize output voltage overshoot. For  
example, when the power supply output is overloaded the error amplifier compares the actual output voltage to  
the internal reference voltage. If the VSENSE pin voltage is lower than the internal reference voltage for a  
considerable time, the output of the error amplifier demands maximum output current. Once the condition is  
removed, the regulator output rises and the error amplifier output transitions to the steady state voltage. In some  
applications with small output capacitance, the power supply output voltage can respond faster than the error  
amplifier. This leads to the possibility of an output overshoot. The OVP feature minimizes the overshoot by  
comparing the VSENSE pin voltage to the OVP threshold. If the VSENSE pin voltage is greater than the OVP  
threshold the high-side MOSFET is turned off preventing current from flowing to the output and minimizing output  
overshoot. When the VSENSE voltage drops lower than the OVP threshold, the high-side MOSFET is allowed to  
turn on at the next clock cycle.  
OVERCURRENT PROTECTION  
The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side  
MOSFET and the low-side MOSFET.  
High-side MOSFET overcurrent protection  
The device implements current mode control which uses the COMP pin voltage to control the turn off of the high-  
side MOSFET and the turn on of the low-side MOSFET on a cycle by cycle basis. Each cycle the switch current  
and the current reference generated by the COMP pin voltage are compared, when the peak switch current  
intersects the current reference the high-side switch is turned off.  
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Low-side MOSFET overcurrent protection  
While the low-side MOSFET is turned on its conduction current is monitored by the internal circuitry. During  
normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side  
MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side  
sourcing current limit is exceeded, the high-side MOSFET is not turned on and the low-side MOSFET stays on  
for the next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side  
sourcing current limit at the start of a cycle.  
The low-side MOSFET may also sink current from the load. If the low-side sinking current limit is exceeded the  
low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario both MOSFETs are  
off until the start of the next cycle.  
Furthermore, if an output overload condition (as measured by the COMP pin voltage) has lasted for more than  
the hiccup wait time which is programmed for 512 switching cycles, the device will shut down itself and restart  
after the hiccup time of 16384 cycles. The hiccup mode helps to reduce the device power dissipation under  
severe overcurrent conditions.  
THERMAL SHUTDOWN  
The internal thermal shutdown circuitry forces the device to stop switching if the junction temperature exceeds  
175°C typically. Once the junction temperature drops below 165°C typically, the internal thermal hiccup timer will  
start to count. The device reinitiates the power up sequence after the built-in thermal shutdown hiccup time  
(32768 cycles) is over.  
SMALL SIGNAL MODEL FOR LOOP RESPONSE  
Figure 17 shows an equivalent model for the device control loop which can be modeled in a circuit simulation  
program to check frequency response and transient responses. The error amplifier is a transconductance  
amplifier with a gm of 1300μA/V. The error amplifier can be modeled using an ideal voltage controlled current  
source. The resistor Roea (3.07 M) and capacitor Coea (20.7 pF) model the open loop gain and frequency  
response of the error amplifier. The 1-mV ac voltage source between the nodes a and b effectively breaks the  
control loop for the frequency response measurements. Plotting a/c and c/b show the small signal responses of  
the power stage and frequency compensation respectively. Plotting a/b shows the small signal response of the  
overall loop. The dynamic loop response can be checked by replacing the RL with a current source with the  
appropriate load step amplitude and step rate in a time domain analysis.  
PH  
VOUT  
Power Stage  
8 A/V  
a
b
RESR  
R1  
RL  
COMP  
c
C
O
VSENSE  
R2  
0.8V  
Coea  
Roea  
R3  
C1  
gm  
1300 mA/V  
C2  
Figure 17. Small Signal Model for Loop Response  
SIMPLE SMALL SIGNAL MODEL FOR PEAK CURRENT MODE CONTROL  
Figure 18 is a simple small signal model that can be used to understand how to design the frequency  
compensation. The device power stage can be approximated to a voltage controlled current source (duty cycle  
modulator) supplying current to the output capacitor and load resistor. The control to output transfer function is  
shown in Equation 6 and consists of a dc gain, one dominant pole and one ESR zero. The quotient of the  
change in switch current and the change in COMP pin voltage (node c in Figure 17) is the power stage  
transconductance (gmps) which is 8 A/V for the device. The DC gain of the power stage is the product of gmps  
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and the load resistance, R , as shown in Equation 7 with resistive loads. As the load current increases, the DC  
L
gain decreases. This variation with load may seem problematic at first glance, but fortunately the dominant pole  
moves with load current (see Equation 8). The combined effect is highlighted by the dashed line in Figure 19. As  
the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover  
frequency the same for the varying load conditions which makes it easier to design the frequency compensation.  
VOUT  
VC  
RESR  
RL  
gm  
ps  
CO  
Figure 18. Simplified Small Signal Model for Peak Current Mode Control  
VOUT  
Adc  
VC  
RESR  
fp  
RL  
gm  
ps  
CO  
fz  
Figure 19. Simplified Frequency Response for Peak Current Mode Control  
æ
ç
è
s
ö
÷
ø
1+  
2p ´ ¦z  
VOUT  
VC  
= Adc ´  
æ
ö
÷
ø
s
1+  
ç
2p ´ ¦p  
è
(6)  
(7)  
Adc = gmps ´ RL  
1
¦p =  
C
´ R ´ 2p  
O
L
(8)  
(9)  
1
¦z =  
C
´ R  
´ 2p  
ESR  
O
Where  
gmea is the GM amplifier gain (1300μA/V)  
gmps is the power stage gain (8 A/V).  
RL is the load resistance  
CO is the output capacitance.  
RESR is the equivalent series resistance of the output capacitor.  
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SMALL SIGNAL MODEL FOR FREQUENCY COMPENSATION  
The device uses a transconductance amplifier for the error amplifier and readily supports two of the commonly  
used Type II compensation circuits and a Type III frequency compensation circuit, as shown in Figure 20. In  
Type 2A, one additional high frequency pole, C6, is added to attenuate high frequency noise. In Type III, one  
additional capacitor, C11, is added to provide a phase boost at the crossover frequency. See Designing Type III  
Compensation for Current Mode Step-Down Converters (SLVA352) for a complete explanation of Type III  
compensation.  
The design guidelines below are provided for advanced users who prefer to compensate using the general  
method. The below equations only apply to designs whose ESR zero is above the bandwidth of the control loop.  
This is usually true with ceramic output capacitors.  
VOUT  
C11  
R8  
VSENSE  
Type 2A  
Type 2B  
COMP  
Coea  
Type 3  
Vref  
R4  
C4  
gm  
C6  
R4  
C4  
ea  
Roea  
R9  
Figure 20. Types of Frequency Compensation  
The general design guidelines for device loop compensation are as follows:  
1. Determine the crossover frequency, fc. A good starting point is 1/10th of the switching frequency, fsw.  
2. R4 can be determined by:  
2p ´ ¦c ´ VOUT ´ Co  
R4 =  
gmea ´ Vref ´ gmps  
(10)  
Where:  
gmea is the GM amplifier gain (1300 μA/V)  
gmps is the power stage gain (8 A/V)  
Vref is the reference voltage (0.8 V)  
æ
ç
è
ö
÷
ø
1
¦p =  
CO ´ RL ´ 2p  
3. Place a compensation zero at the dominant pole:  
C4 can be determined by:  
RL ´ Co  
C4 =  
R4  
(11)  
4. C6 is optional. It can be used to cancel the zero from the ESR (Equivalent Series Resistance) of the output  
capacitor Co.  
RESR ´ Co  
C6 =  
R4  
(12)  
5. Type III compensation can be implemented with the addition of one capacitor, C11. This allows for slightly  
higher loop bandwidths and higher phase margins. If used, C11 is calculated from Equation 13.  
1
C11=  
2×p ×R8×fc  
(
)
(13)  
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APPLICATION INFORMATION  
TPS54335 APPLICATION SCHEMATIC  
U1  
TPS54335DDA  
L1 15µH  
VIN = 8 - 28 V  
C3 0.1µF  
VOUT = 5 V, 3 A max  
2
1
3
6
4
VIN  
VIN  
BOOT  
PH  
VOUT  
5
7
8
VSENSE  
VSENSE  
EN  
C1  
10µF  
C2  
0.1µF  
C6  
47µF  
C7  
47µF  
R4  
51.1  
COMP  
R1  
220k  
RT  
GND  
PAD  
R3  
3.74k  
R5  
100k  
C5  
120pF  
VSENSE  
R2  
43.2k  
R7  
143k  
C4  
0.012µF  
R6  
19.1k  
Figure 21. Typical Application Schematic, TPS54335  
STEP BY STEP DESIGN PROCEDURE  
The following design procedure can be used to select component values for the TPS54335 and TPS54336.  
Alternately, the WEBENCH® software may be used to generate a complete design. The WEBENCH® software  
uses an iterative design procedure and accesses a comprehensive database of components when generating a  
design. This section presents a simplified discussion of the design process using the TPS54335.  
To begin the design process a few parameters must be decided upon. The designer needs to know the following:  
Input voltage range  
Output voltage  
Input ripple voltage  
Output ripple voltage  
Output current rating  
Operating frequency  
For this design example, use the following as the input parameters  
Table 1. Design Parameters  
DESIGN PARAMETER  
Input voltage range  
EXAMPLE VALUE  
8 V to 28V  
5 V  
Output voltage  
Transient response, 1.5 A load step  
Input ripple voltage  
ΔVout = +/- 5 %  
400 mV  
Output ripple voltage  
Output current rating  
Operating Frequency  
30 mV  
3 A  
340 kHz  
SWITCHING FREQUENCY  
The switching frequency of the TPS54335 is set at 340 kHz to match the internally set frequency of the  
TPS54336 for this design. Use Equation 4 to calculate the required value for R7. The calculated value is 140.6  
kΩ. Use the next higher standard value of 143 kΩ.  
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OUTPUT VOLTAGE SET POINT  
The output voltage of the TPS54335 is externally adjustable using a resistor divider network. In the application  
circuit of Figure 21, this divider network is comprised of R5 and R6. The relationship of the output voltage to the  
resistor divider is given by Equation 14 and Equation 15:  
R5 ´ VREF  
R6 =  
VOUT - VREF  
(14)  
R5  
é
ù
VOUT = VREF  
´
+1  
ê
ú
R6  
ë
û
(15)  
Choose R5 to be approximately 100 k. Slightly increasing or decreasing R5 can result in closer output voltage  
matching when using standard value resistors. In this design, R5 = 100 kand R6 = 19.1 k, resulting in a  
4.988 V output voltage. The 51.1 ohm resistor R4 is provided as a convenient place to break the control loop for  
stability testing.  
Under Voltage Lockout Set Point  
The Under Voltage Lock Out (UVLO) can be adjusted using the external voltage divider network of R1 and R2.  
R1 is connected between VIN and the EN pin of the TPS54335 and R2 is connected between EN and GND .  
The UVLO has two thresholds, one for power up when the input voltage is rising and one for power down or  
brown outs when the input voltage is falling. For the example design, the minimum input voltage is 8 V, so the  
start voltage threshold is set to 7.15 V with 1 V hysteresis. Equation 2 and Equation 3 can be used to calculate  
the values for the upper and lower resistor values of R1 and R2.  
INPUT CAPACITORS  
The TPS54335 requires an input decoupling capacitor and depending on the application, a bulk input capacitor.  
The typical recommended value for the decoupling capacitor is 10 μF. A high-quality ceramic type X5R or X7R is  
recommended. The voltage rating should be greater than the maximum input voltage. A smaller value may be  
used as long as all other requirements are met; however 10 μF has been shown to work well in a wide variety of  
circuits. Additionally, some bulk capacitance may be needed, especially if the TPS54335 circuit is not located  
within about 2 inches from the input voltage source. The value for this capacitor is not critical but should be rated  
to handle the maximum input voltage including ripple voltage, and should filter the output so that input ripple  
voltage is acceptable. For this design, a 10 μF, X7R dielectric capacitor rated for 35 V is used for the input  
decoupling capacitor. . The equivalent series resistance (ESR) is approximately 2m, and the current rating is 3  
A. Additionally, a small 0.1 μF capacitor is included for high frequency filtering.  
This input ripple voltage can be approximated by Equation 16  
IOUT(MAX) ´ 0.25  
DV  
=
+ IOUT(MAX) ´ ESRMAX  
(
)
IN  
CBULK ´ fSW  
(16)  
Where IOUT(MAX) is the maximum load current, fSW is the switching frequency, CBULK is the bulk capacitor value  
and ESRMAX is the maximum series resistance of the bulk capacitor.  
The maximum RMS ripple current also needs to be checked. For worst case conditions, this can be  
approximated by Equation 17  
IOUT(MAX)  
ICIN  
=
2
(17)  
In this case, the input ripple voltage would be 227 mV and the RMS ripple current would be 1.5 A. It is also  
important to note that the actual input voltage ripple will be greatly affected by parasitics associated with the  
layout and the output impedance of the voltage source. The actual input voltage ripple for this circuit is shown in  
Design Parameters and is larger than the calculated value. This measured value is still below the specified input  
limit of 400 mV. The maximum voltage across the input capacitors would be VIN max plus ΔVIN/2. The chosen  
bypass capacitor is rated for 35 V and the ripple current capacity is greater than 3 A, both providing ample  
margin. It is very important that the maximum ratings for voltage and current are not exceeded under any  
circumstance.  
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OUTPUT FILTER COMPONENTS  
Two components need to be selected for the output filter, LOUT and COUT. Since the TPS54335 is an externally  
compensated device, a wide range of filter component types and values can be supported.  
Inductor Selection  
To calculate the minimum value of the output inductor, use Equation 18  
VOUT  
´
VIN(MAX) - VOUT  
(
)
´ KIND ´IOUT ´FSW  
LMIN  
=
V
IN(MAX)  
(18)  
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.  
In general, this value is at the discretion of the designer; however, the following guidelines may be used. For  
designs using low ESR output capacitors such as ceramics, a value as high as KIND = 0.3 may be used. When  
using higher ESR output capacitors, KIND = 0.2 yields better results.  
For this design example, use KIND = 0.3 and the minimum inductor value is calculated to be 13.4 μH. For this  
design, a close standard value was chosen: 15 μH.  
For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded.  
The RMS inductor current can be found from Equation 19  
æ
ç
ç
è
ö2  
÷
VOUT  
´
V
- VOUT  
(
)
IN(MAX)  
1
IL(RMS)  
=
I2OUT(MAX)  
+
´
÷
12  
V
´ LOUT ´ FSW ´ 0.8  
IN(MAX)  
ø
(19)  
and the peak inductor current can be determined with Equation 20  
VOUT  
´
V
- VOUT  
(
IN(MAX)  
)
IN(MAX)  
IL(PK) = IOUT(MAX)  
+
1.6 ´ V  
´ LOUT ´ FSW  
(20)  
For this design, the RMS inductor current is 3.002 A and the peak inductor current is 3.503 A. The chosen  
inductor is a Coilcraft 15 μH, XAL6060-153MEB. It has a saturation current rating of 5.8 A and an RMS current  
rating of 6.0 A, meeting these requirements. Smaller or larger inductor values can be used depending on the  
amount of ripple current the designer wishes to allow so long as the other design requirements are met. Larger  
value inductors will have lower ac current and result in lower output voltage ripple, while smaller inductor values  
will increase ac current and output voltage ripple. In general, inductor values for use with the TPS54335 are in  
the range of 0.68 μH to 100 μH.  
Capacitor Selection  
There are three primary considerations for selecting the value of the output capacitor. The output capacitor  
determines the modulator pole, the output voltage ripple, and how the regulator responds to a large change in  
load current. The output capacitance needs to be selected based on the more stringent of these three criteria  
The desired response to a large change in the load current is the first criteria. The output capacitor needs to  
supply the load with current when the regulator can not. This situation would occur if there are desired hold-up  
times for the regulator where the output capacitor must hold the output voltage above a certain level for a  
specified amount of time after the input power is removed. The regulator is also temporarily not able to supply  
sufficient output current if there is a large, fast increase in the current needs of the load such as a transition from  
no load to full load. The regulator usually needs two or more clock cycles for the control loop to see the change  
in load current and output voltage and adjust the duty cycle to react to the change. The output capacitor must be  
sized to supply the extra current to the load until the control loop responds to the load change. The output  
capacitance must be large enough to supply the difference in current for 2 clock cycles while only allowing a  
tolerable amount of drop in the output voltage. Equation 21 shows the minimum output capacitance necessary to  
accomplish this.  
2×DIout  
Co >  
f sw ×DVout  
(21)  
18  
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Where ΔIout is the change in output current, Fsw is the regulators switching frequency and ΔVout is the  
allowable change in the output voltage. For this example, the transient load response is specified as a 5%  
change in Vout for a load step of 1.5 A. For this example, ΔIout = 1.5 A and ΔVout = 0.05 x 5.0 = 0.250 V. Using  
these numbers gives a minimum capacitance of 35.3 μF. This value does not take the ESR of the output  
capacitor into account in the output voltage change. For ceramic capacitors, the ESR is usually small enough to  
ignore in this calculation.  
Equation 22 calculates the minimum output capacitance needed to meet the output voltage ripple specification.  
Where fsw is the switching frequency, Voripple is the maximum allowable output voltage ripple, and Iripple is the  
inductor ripple current. In this case, the maximum output voltage ripple is 30 mV. Under this requirement  
Equation 22, yields 12.3 µF.  
1
1
Co >  
×
Voripple  
Iripple  
8× f sw  
(22)  
Equation 23 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple  
specification. Equation 23 indicates the ESR should be less than 29.8 mΩ. In this case, the ceramic caps’ ESR is  
much smaller than 29.8 mΩ.  
Voripple  
Resr <  
Iripple  
(23)  
Additional capacitance de-ratings for aging, temperature and DC bias should be factored in which increases this  
minimum value. For this example, two 47 μF 10V X5R ceramic capacitor with 3 mΩ of ESR are used. Capacitors  
generally have limits to the amount of ripple current they can handle without failing or producing excess heat. An  
output capacitor that can support the inductor ripple current must be specified. Some capacitor data sheets  
specify the RMS (Root Mean Square) value of the maximum ripple current. Equation 24 can be used to calculate  
the RMS ripple current the output capacitor needs to support. For this application, Equation 24 yields 116.2 mA  
for each capacitor.  
æ
ç
ö
÷
VOUT × V  
- VOUT  
(
)
× LOUT × FSW × NC  
IN(MAX)  
1
ICOUT(RMS)  
=
×
ç
÷
V
12  
IN(MAX)  
è
ø
(24)  
COMPENSATION COMPONENTS  
There are several possible methods to design closed loop compensation for dc/dc converters. For the ideal  
current mode control, the design equations can be easily simplified. The power stage gain is constant at low  
frequencies, and rolls off at -20 dB/decade above the modulator pole frequency. The power stage phase is 0  
degrees at low frequencies and starts to fall one decade below the modulator pole frequency reaching a  
minimum of -90 degrees one decade above the modulator pole frequency. The modulator pole is a simple pole  
shown in Equation 25  
Ioutmax  
¦p mod =  
2p ´ Vout ´ Cout  
(25)  
For the TPS54335 most circuits will have relatively high amounts of slope compensation. As more slope  
compensation is applied, the power stage characteristics will deviate from the ideal approximations. The phase  
loss of the power stage will now approach -180 degrees, making compensation more difficult. The power stage  
transfer function can be solved but it is a tedious hand calculation that does not lend itself to simple  
approximations. It is best to use Pspice to accurately model the power stage gain and phase so that a reliable  
compensation circuit can be designed. Alternately, a direct measurement of the power stage characteristics can  
be used. That is the technique used in this design procedure. For this design, L1 = 15 µH. C6 and C7 are set to  
47µF each, and the ESR is 3 mΩ. Now the power stage characteristics are shown in Figure 22.  
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60  
40  
20  
0
180  
120  
60  
Gain  
Gain = 2.23 dB  
@ F = 31.62 kHz  
0
-20  
-40  
-60  
-120  
-180  
Phase  
-60  
10  
100  
1000  
10000  
100000  
C020  
Frequency - Hz  
Figure 22. Power Stage Gain and Phase Characteristics  
For this design, the intended crossover frequency is 31.62 kHz (there is an actual measured data point for that  
frequency). From the power stage gain and phase plots, the gain at 31.62 kHz is 2.23 dB and the phase is about  
-106 degrees. For 60 degrees of phase margin, additional phase boost from a feed forward capacitor in parallel  
with the upper resistor of the voltage set point divider is not needed. R3 sets the gain of the compensated error  
amplifier to be equal and opposite the power stage gain at crossover. The required value of R3 can be calculated  
from Equation 26 .  
-GPWRSTG  
20  
VOUT  
VREF  
10  
R3 =  
×
gmEA  
(26)  
To maximize phase gain, the compensator zero is placed one decade below the crossover frequency of 31.62  
kHz. The required value for C4 is given by Equation 27.  
1
C4 =  
FCO  
2× p×R3×  
10  
(27)  
To maximize phase gain the high frequency pole is placed one decade above the crossover frequency of 31.62  
kHz. The pole can also be useful to offset the ESR of aluminum electrolytic output capacitors. The value for C5  
can be calculated from Equation 28.  
1
C5 =  
2× p ×R3×10×FCO  
(28)  
For this design the calculated values for the compensation components are R3 = 3.74 kΩ ,C4 = 0.012 µF and C5  
= 120 pF.  
BOOTSTRAP CAPACITOR  
Every TPS54335 design requires a bootstrap capacitor, C3. The bootstrap capacitor must be 0.1 μF. The  
bootstrap capacitor is located between the PH pins and BOOT pin. The bootstrap capacitor should be a high-  
quality ceramic type with X7R or X5R grade dielectric for temperature stability.  
POWER DISSIPATION ESTIMATE  
The following formulas show how to estimate the device power dissipation under continuous conduction mode  
operations. They should not be used if the device is working in the discontinuous conduction mode (DCM) or  
pulse skipping Eco-modeTM  
.
The device power dissipation includes:  
1) Conduction loss: Pcon = Iout2 x RDS(on) x VOUT/VIN  
2) Switching loss: Psw = 0.5 x 10-9 x VIN 2 x IOUT x Fsw  
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3) Gate charge loss: Pgc = 22.8 x 10-9 x Fsw  
4) Quiescent current loss: Pq = 0.11 x 10-3 x VIN  
Where:  
IOUT is the output current (A).  
RDS(on) is the on-resistance of the high-side MOSFET ().  
VOUT is the output voltage (V).  
VIN is the input voltage (V).  
Fsw is the switching frequency (Hz).  
So  
Ptot = Pcon + Psw + Pgc + Pq  
For given TA , TJ = TA + Rth x Ptot.  
For given TJMAX = 150°C, TAMAX = TJMAX– Rth x Ptot.  
Where:  
Ptot is the total device power dissipation (W).  
TA is the ambient temperature (°C).  
TJ is the junction temperature (°C) .  
Rth is the thermal resistance of the package (°C/W).  
TJMAX is maximum junction temperature (°C).  
TAMAX is maximum ambient temperature (°C).  
PCB LAYOUT  
The VIN pin should be bypassed to ground with a low ESR ceramic bypass capacitor. Care should be taken to  
minimize the loop area formed by the bypass capacitor connection. the VIN pin, and the GND pin of the IC. The  
typical recommended bypass capacitance is 10-μF ceramic with a X5R or X7R dielectric and the optimum  
placement is closest to the VIN and GND pins of the device. See Figure 23 for a PCB layout example. The GND  
pin should be tied to the PCB ground plane at the pin of the IC. To facilitate close placement of the input bypass  
capacitors, The PH pin should be routed to a small copper area directly adjacent to the pin. Use vias to rout the  
PH signal to the bottom side or an inner layer. If necessary you can allow the top side copper area to extend  
slightly under the body of the closest input bypass capacitor. Make the copper trace on the bottom or internal  
layer short and wide as practical to reduce EMI issues. Connect the trace with vias back to the top side to  
connect with the output inductor as shown after the GND pin. In the same way use a bottom or internal layer  
trace to rout the PH signal across the VIN pin to connect to the BOOT capacitor as shown. Make the circulating  
loop from PH to the output inductor, output capacitors and back to GND as tight as possible while preserving  
adequate etch width to reduce conduction losses in the copper . For operation at full rated load, the ground area  
near the IC must provide adequate heat dissipating area. Connect the exposed thermal pad to bottom or internal  
layer ground plane using vias as shown. Additional vias may be used adjacent to the IC to tie top side copper to  
the internal or bottom layer copper. The additional external components can be placed approximately as shown.  
Use a separate ground trace to connect the feed back, compensation, UVLO and RT (SS for TPS54336) returns.  
Connect this ground trace to the main power ground at a single point to minimize circulating currents. It may be  
possible to obtain acceptable performance with alternate layout schemes, however this layout has been shown to  
produce good results and is intended as a guideline.  
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VIA to Power Ground Plane  
VIA to SW Copper Pour on Bottom  
or Internal Layer  
Connect to VIN on  
internal or bottom  
layer  
ANALOG  
GROUND  
TRACE  
VIN  
VIN  
INPUT  
BYPASS  
VIN  
HIGH FREQUENCY  
BOOT  
BYPASS  
FREQUENCY  
SET RESISTOR  
CAPACITOR  
CAPACITOR CAPACITOR  
BOOT  
RT  
EN  
UVLO  
RESISTORS  
VIN  
PH  
COMP  
VSENSE  
GND  
COMPENSATION  
NETWORK  
EXPOSED  
THERMAL PAD  
AREA  
POWER  
GROUND  
FEEDBACK  
RESISTORS  
OUTPUT  
INDUCTOR  
SW node copper pour  
area on internal or  
bottom layer  
POWER  
GROUND  
Note: Pin 8 for TPS54336  
is SS. Connect SS capacitor  
instead of RT resistor from  
pin 8 to GND.  
OUTPUT  
FILTER  
CAPACITOR  
VOUT  
Figure 23. TPS54335DDA Board Layout  
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TPS54335 APPLICATION CURVES  
spacer  
100  
90  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
VIN = 12 V  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 24 V  
VIN = 24 V  
VIN = 12 V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.001  
0.01  
0.1  
1
10  
C015  
C016  
Output Current - A  
Output Current - A  
Figure 24. TPS54335 Efficiency  
Figure 25. TPS54335 Low Current Efficiency  
spacer  
spacer  
0.5  
0.4  
0.10  
0.08  
0.3  
0.06  
IOUT = 1.5 A  
0.2  
0.04  
0.02  
VIN = 12 V  
0.1  
0.0  
0.00  
±0.1  
±0.2  
±0.3  
±0.4  
±0.5  
±0.02  
±0.04  
±0.06  
±0.08  
±0.10  
VIN = 24 V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
C017  
C018  
Output Current - A  
Input Voltage - V  
Figure 26. TPS54335 Load Regulation  
Figure 27. TPS54335 Line Regulation  
spacer  
spacer  
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60  
40  
20  
0
180  
120  
60  
Phase  
V
= 200 mV/div (ac coupled)  
OUT  
0
-20  
-40  
-60  
Gain  
-60  
-120  
-180  
I
= 1 A/div  
OUT  
0.75 A to 2.25 A load step,  
slew rate = 500 mA / µsec  
10  
100  
1000  
10000  
100000  
1000000  
C019  
Frequency - Hz  
Time = 200 µs/div  
Figure 28. TPS54335 Transient Response  
Figure 29. TPS54335 Loop Response  
spacer  
spacer  
V
= 20 mV/div (ac coupled)  
OUT  
V
= 20 mV/div (ac coupled)  
OUT  
PH = 10 V/div  
PH = 10 V/div  
Time = 2 µs/div  
Time = 2 µs/div  
Figure 30. TPS54335 Full Load Output Ripple  
Figure 31. TPS54335 100 mA Output Ripple  
spacer  
spacer  
V
= 200 mV/div (ac coupled)  
IN  
V
= 20 mV/div (ac coupled)  
OUT  
PH = 10 V/div  
PH = 10 V/div  
Time = 100 µs/div  
Time = 2 µs/div  
Figure 32. TPS54335 No Load Output Ripple  
Figure 33. TPS54335 Full Load Input Ripple  
spacer  
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spacer  
V
= 10 V/div  
IN  
V
= 10 V/div  
IN  
EN = 2 V/div  
EN = 2 V/div  
V
= 2 V/div  
V
= 2 V/div  
OUT  
OUT  
Time = 2 ms/div  
Time = 2 ms/div  
Figure 34. TPS54335 Start Up Relative to VIN  
Figure 35. TPS54335 Start-up Relative to Enable  
spacer  
spacer  
V
= 10 V/div  
V
= 10 V/div  
IN  
IN  
EN = 2 V/div  
EN = 2 V/div  
V
= 2 V/div  
V
= 2 V/div  
OUT  
OUT  
Time = 2 ms/div  
Time = 2 ms/div  
Figure 36. TPS54335 Shut Down Relative to VIN  
Figure 37. TPS54335 Shut Down Relative to EN  
TPS54336 APPLICATION SCHEMATIC  
U1  
TPS54336DDA  
L1 15µH  
VIN = 8 - 28 V  
C3 0.1µF  
VOUT = 5 V, 3 A max  
2
1
3
6
4
VIN  
VIN  
BOOT  
PH  
VOUT  
5
7
8
VSENSE  
VSENSE  
EN  
C1  
10µF  
C2  
0.1µF  
C6  
47µF  
C7  
47µF  
R4  
51.1  
COMP  
R1  
220k  
SS  
GND  
PAD  
R3  
3.74k  
R5  
100k  
C5  
120pF  
VSENSE  
R2  
43.2k  
C8  
0.01µF  
C4  
0.012µF  
R6  
19.1k  
Figure 38. Typical Application Schematic, TPS54336  
TPS54336 DESIGN  
The design procedure for the TPS54336 is identical to the TPS54335, except the TPS54336 utilizes a slow start  
circuit rather than an externally set switching frequency at pin 8. The switching frequency is internally set for 340  
kHz.  
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SLOW START CAPACITOR  
The slow start capacitor determines the minimum amount of time it takes for the output voltage to reach its  
nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate.  
This is also used if the output capacitance is very large and would require large amounts of current to quickly  
charge the capacitor to the output voltage level. The large currents necessary to charge the capacitor may  
make the TPS54336 reach the current limit or excessive current draw from the input power supply may  
cause the input voltage rail to sag. Limiting the output voltage slew rate solves both of these problems. The  
soft start capacitor value can be calculated using Equation 5. For the example circuit, the soft start time is  
not too critical since the output capacitor value is 2 x 47 μF which does not require much current to charge to  
5 V. The example circuit has the soft start time set to an arbitrary value of 3.5 ms which requires a 10 nF  
capacitor. In TPS54336, Iss is 2.3 µA and Vref is 0.8V.  
TPS54336 APPLICATION CURVES  
spacer  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 12 V  
VIN = 24 V  
VIN = 24 V  
VIN = 12 V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.001  
0.01  
0.1  
Output Current - A  
1
10  
C021  
C022  
Output Current - A  
Figure 39. TPS54336 Efficiency  
Figure 40. TPS54336 Low Current Efficiency  
spacer  
0.5  
0.4  
0.5  
0.4  
VIN = 24 V  
0.3  
0.3  
0.2  
0.1  
0.2  
VIN = 12 V  
0.1  
0.0  
0
±0.1  
±0.2  
±0.3  
±0.4  
±0.5  
-0.1  
Vin=12V  
-0.2  
Vin=24V  
-0.3  
-0.4  
-0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
C023  
Output Current - A  
0
0.5  
1
1.5  
2
2.5  
3
Output Current - A  
Figure 41. TPS54336 DDA Load Regulation  
Figure 42. TPS54336 DRC Load Regulation  
spacer  
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0.10  
0.08  
0.1  
0.08  
0.06  
IOUT = 1.5 A  
0.06  
0.04  
0.02  
0.04  
0.02  
0.00  
0
-0.02  
-0.04  
-0.06  
-0.08  
-0.1  
±0.02  
±0.04  
±0.06  
±0.08  
±0.10  
Iout=1.5A  
8
12  
16  
20  
24  
28  
C024  
12  
16  
20  
8
10  
14  
Input Voltage - V  
18  
22 24 26 28  
Input Voltage - V  
Figure 43. TPS54336 DDA Line Regulation  
Figure 44. TPS54336 DRC Line Regulation  
spacer  
spacer  
60  
40  
20  
0
180  
120  
60  
Phase  
V
= 200 mV/div (ac coupled)  
OUT  
0
Gain  
-20  
-40  
-60  
-60  
-120  
-180  
I
= 1 A/div  
OUT  
0.75 A to 2.25 A load step,  
slew rate = 500 mA / µsec  
10  
100  
1000  
10000  
100000  
1000000  
C025  
Frequency - Hz  
Time = 200 µs/div  
Figure 45. TPS54336 Transient Response  
Figure 46. TPS54336 Loop Response  
spacer  
spacer  
V
= 20 mV/div (ac coupled)  
OUT  
V
= 20 mV/div (ac coupled)  
OUT  
PH = 10 V/div  
PH = 10 V/div  
Time = 2 µs/div  
Time = 2 µs/div  
Figure 47. TPS54336 Full Load Output Ripple  
Figure 48. TPS54336 100 mA Output Ripple  
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spacer  
V
= 200 mV/div (ac coupled)  
IN  
V
= 20 mV/div (ac coupled)  
OUT  
PH = 10 V/div  
PH = 10 V/div  
Time = 100 µs/div  
Time = 2 µs/div  
Figure 49. TPS54336 No Load Output Ripple  
Figure 50. TPS54336 Full Load Input Ripple  
spacer  
spacer  
V
= 20 V/div  
IN  
V
= 20 V/div  
IN  
EN = 5 V/div  
EN = 5 V/div  
SS = 2 V/div  
SS = 2 V/div  
V
= 2 V/div  
V
= 2 V/div  
OUT  
OUT  
Time = 2 ms/div  
Time = 2 ms/div  
Figure 51. TPS54336 Start Up Relative to VIN  
Figure 52. TPS54336 Start-up Relative to Enable  
spacer  
spacer  
V
= 20 V/div  
V
= 20 V/div  
IN  
IN  
EN = 5 V/div  
SS = 2 V/div  
EN = 5 V/div  
SS = 2 V/div  
V
= 2 V/div  
V
= 2 V/div  
OUT  
OUT  
Time = 2 ms/div  
Time = 2 ms/div  
Figure 53. TPS54336 Shut Down Relative to VIN  
Figure 54. TPS54336 Shut Down Relative to EN  
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REVISION HISTORY  
NOTE: Previous versions may have different page numbers than current version.  
Changes from Original (May 2013) to Revision A  
Page  
Changed title from "....Step Down SWIFT™ Converter" to "....SWIFT™ Step-Down Voltage Regulator" and changed  
product status from "Production Data" to "Product Mix" ....................................................................................................... 1  
Changed Feature bullet from "Thermal and Overvoltage Transient Protection" to "Thermal Shutdown and  
Overvoltage Transition Protection" ....................................................................................................................................... 1  
Added text "...and 10-pin SON" to Feature bullet ................................................................................................................. 1  
Changed Applications bullet from "...such as DTV, Set Top Boxes, LCD displays, CPE Equipment" to "....such as a  
Digital TV (DTV), Set Top Box (STB, DVD/Blu-ray Player), LCD Display, CPE (Cable Modem, WiFi Router), DLP  
Projectors, Smart Meters" ..................................................................................................................................................... 1  
Changed Applications bullet from "...Distributed Power Systems" to "...Distributed Power Bus Supply .............................. 1  
Changed Description section for clarification. ....................................................................................................................... 1  
Changed Simplified Schematic images for readability ......................................................................................................... 1  
Added DRC package option to Ordering Information table. ................................................................................................. 2  
Added DRC package to Thermal Information table .............................................................................................................. 3  
Changed Reference voltage MIN spec from "0.792" to "0.7936" and MAX from "0.808" to "0.8064" for TJ =25°C  
condition ................................................................................................................................................................................ 3  
Deleted "Error amplifier dc gain" spec from Electrical Characteristics table ........................................................................ 3  
Added SON (DRC) pin assignment drawings and pin descriptions ..................................................................................... 5  
Added TPS54336 DRC Load and Line Regulation characteristics graphs ........................................................................ 26  
Changes from Revision A (July 2013) to Revision B  
Page  
Corrected Equation 26. ....................................................................................................................................................... 20  
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PACKAGING INFORMATION  
Orderable Device  
TPS54335DDA  
TPS54335DDAR  
TPS54336DDA  
TPS54336DDAR  
TPS54336DRCR  
TPS54336DRCT  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
ACTIVE SO PowerPAD  
DDA  
8
8
75  
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR  
& no Sb/Br)  
54335  
54335  
54336  
54336  
54336  
54336  
ACTIVE SO PowerPAD  
ACTIVE SO PowerPAD  
ACTIVE SO PowerPAD  
DDA  
DDA  
DDA  
DRC  
DRC  
2500  
75  
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR  
& no Sb/Br)  
8
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR  
& no Sb/Br)  
8
2500  
3000  
250  
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR  
& no Sb/Br)  
ACTIVE  
ACTIVE  
SON  
SON  
10  
10  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
Level-2-260C-1 YEAR  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
Level-2-260C-1 YEAR  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
27-Sep-2013  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
27-Sep-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
2500  
2500  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS54335DDAR  
TPS54336DDAR  
SO  
Power  
PAD  
DDA  
DDA  
8
8
330.0  
330.0  
12.8  
12.8  
6.4  
6.4  
5.2  
5.2  
2.1  
2.1  
8.0  
8.0  
12.0  
12.0  
Q1  
Q1  
SO  
Power  
PAD  
TPS54336DRCR  
TPS54336DRCT  
SON  
SON  
DRC  
DRC  
10  
10  
3000  
250  
330.0  
180.0  
12.4  
12.4  
3.3  
3.3  
3.3  
3.3  
1.1  
1.1  
8.0  
8.0  
12.0  
12.0  
Q2  
Q2  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
27-Sep-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS54335DDAR  
TPS54336DDAR  
TPS54336DRCR  
TPS54336DRCT  
SO PowerPAD  
SO PowerPAD  
SON  
DDA  
DDA  
DRC  
DRC  
8
8
2500  
2500  
3000  
250  
366.0  
366.0  
367.0  
210.0  
364.0  
364.0  
367.0  
185.0  
50.0  
50.0  
35.0  
35.0  
10  
10  
SON  
Pack Materials-Page 2  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other  
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest  
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and  
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale  
supplied at the time of order acknowledgment.  
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily  
performed.  
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and  
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide  
adequate design and operating safeguards.  
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or  
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information  
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or  
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the  
third party, or a license from TI under the patents or other intellectual property of TI.  
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration  
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered  
documentation. Information of third parties may be subject to additional restrictions.  
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service  
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.  
TI is not responsible or liable for any such statements.  
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of any TI components in safety-critical applications.  
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to  
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requirements. Nonetheless, such components are subject to these terms.  
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties  
have executed a special agreement specifically governing such use.  
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in  
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components  
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and  
regulatory requirements in connection with such use.  
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of  
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.  
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Applications  
Audio  
www.ti.com/audio  
amplifier.ti.com  
dataconverter.ti.com  
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Communications and Telecom www.ti.com/communications  
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Data Converters  
DLP® Products  
DSP  
Computers and Peripherals  
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Industrial  
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Copyright © 2013, Texas Instruments Incorporated  

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