TPS54910PWPR [TI]

输入电压为 3V 至 4V 的 9A 同步降压转换器 | PWP | 28 | -40 to 85;
TPS54910PWPR
型号: TPS54910PWPR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

输入电压为 3V 至 4V 的 9A 同步降压转换器 | PWP | 28 | -40 to 85

开关 PC 控制器 开关式稳压器 开关式控制器 光电二极管 电源电路 转换器 开关式稳压器或控制器
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Typical Size  
6,4 mm X 9,7 mm  
www.ti.com  
TPS54910  
SLVS421B – MARCH 2002 – REVISED AUGUST 2002  
3-V TO 4-V INPUT, 9-A OUTPUT SYNCHRONOUS BUCK PWM  
SWITCHER WITH INTEGRATED FETs (SWIFT )  
FEATURES  
DESCRIPTION  
D
15-mMOSFET Switches for High Efficiency  
at 9-A Continuous Output  
0.9-V to 2.5-V Adjustable Output Voltage  
Externally Compensated With 1% Accuracy  
Fast Transient Response  
Wide PWM Frequency:  
Fixed 350 kHz, 550 kHz or  
Adjustable 280 kHz to 700 kHz  
Load Protected by Peak Current Limit and  
Thermal Shutdown  
Integrated Solution Reduces Board Area and  
Total Cost  
As a member of the SWIFT family of dc/dc regulators,  
the TPS54910 low-input voltage high-output current  
synchronous buck PWM converter integrates all  
required active components. Included on the substrate  
with the listed features are a true, high performance,  
voltage error amplifier that enables maximum  
performance under transient conditions and flexibility in  
choosing the output filter L and C components; an  
under-voltage-lockout circuit to prevent start-up until  
the input voltage reaches 3 V; an internally and  
externally set slow-start circuit to limit in-rush currents;  
and a power good output useful for processor/logic  
reset, fault signaling, and supply sequencing.  
D
D
D
D
D
D
APPLICATIONS  
The TPS54910 is available in a thermally enhanced  
28-pin TSSOP (PWP) PowerPAD package, which  
eliminates bulky heatsinks. TI provides evaluation  
modules and the SWIFT designer software tool to aid  
in quickly achieving high-performance power supply  
designs to meet aggressive equipment development  
cycles.  
D
D
Low-Voltage, High-Density Systems With  
Power Distributed at 3.3 V  
Point of Load Regulation for High  
Performance DSPs, FPGAs, ASICs and  
Microprocessors  
D
D
Broadband, Networking and Optical  
Communications Infrastructure  
Portable Computing/Notebook PCs  
SIMPLIFIED SCHEMATIC  
EFFICIENCY AT 700 kHz  
SIMPLIFIED SCHEMATIC  
100  
95  
VIN  
PH  
Input  
Output  
90  
85  
80  
75  
70  
65  
60  
55  
50  
TPS54910  
BOOT  
PGND  
VBIAS  
COMP  
VSENSE  
AGND  
V
V
= 3.3 V,  
I
Compensation  
Network  
= 2.5 V  
O
0
1
2
3
4
5
6
7
8
9
10 11 12  
I
– Output Current – A  
O
Pleasebe aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments  
semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD and SWIFT are trademarks of TexasInstruments.  
PRODUCTION DATA information is current as of publication date. Products  
conform to specifications per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include testing of all parameters.  
Copyright 2002, Texas Instruments Incorporated  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
www.ti.com  
Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduring  
storageor handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION  
T
A
OUTPUT VOLTAGE  
PACKAGE  
PART NUMBER  
(1)  
40°C to 85°C  
0.9 V to 2.5 V  
Plastic HTSSOP (PWP)  
TPS54910PWP  
(1)  
ThePWPpackageisalsoavailabletapedandreeled. AddanRsuffix to the device type(i.e.,TPS54910PWPR).Seetheapplicationsectionof  
the data sheet for PowerPAD drawing and layout information.  
ABSOLUTE MAXIMUM RATINGS  
overoperating free-air temperature range unless otherwise noted  
(1)  
TPS54910  
0.3 to 7  
0.3 to 6  
0.3 to 4  
0.3 to 4.5  
0.3 to 10  
0.3 to 7  
0.6 to 6  
UNIT  
SS/ENA, SYNC  
RT  
VSENSE  
Input voltage range, V  
V
I
VIN  
BOOT  
VBIAS, COMP, PWRGD  
Output voltage range, V  
V
O
PH  
PH  
Internally Limited  
Source current, I  
O
COMP, VBIAS  
PH  
6
16  
mA  
A
COMP  
6
Sink current, I  
S
mA  
SS/ENA, PWRGD  
AGND to PGND  
10  
Voltagedifferential  
Operating virtual junction temperature range, T  
±0.3  
V
40 to 125  
65 to 150  
300  
°C  
°C  
°C  
J
Storagetemperature,T  
stg  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  
(1)  
Stressesbeyondthoselistedunderabsolutemaximumratingsmaycausepermanentdamagetothedevice.Thesearestressratingsonly,and  
functionaloperation of the device at these or any other conditions beyond those indicated under recommended operating conditionsis not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS  
MIN NOM MAX UNIT  
Inputvoltage, V  
3
4
V
I
Operatingjunctiontemperature, T  
40  
125  
°C  
J
DISSIPATION RATINGS(1)(2)  
THERMALIMPEDANCE  
JUNCTION-TO-AMBIENT  
T
= 25°C  
T
= 70°C  
T = 85°C  
A
A
A
PACKAGE  
POWER RATING POWER RATING POWER RATING  
(3)  
28 Pin PWP with solder  
14.4°C/W  
27.9°C/W  
6.94 W  
3.81 W  
1.97 W  
2.77 W  
1.43 W  
28 Pin PWP without solder  
3.58 W  
(1)  
(2)  
For more information on the PWP package, refer to TI technical brief, literature number SLMA002.  
Test board conditions:  
1. 3x 3, 4 layers, thickness: 0.062”  
2. 1.5 oz. copper traces located on the top of the PCB  
3. 1.5 oz. copper ground plane on the bottom of the PCB  
4. 0.5 oz. copper ground planes on the 2 internal layers  
5. 12 thermal vias (see Recommended Land Patternin applications section of this data sheet)  
Maximum power dissipation may be limited by over current protection.  
(3)  
2
www.ti.com  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
ELECTRICAL CHARACTERISTICS  
T = 40°C to 125°C, V = 3 V to 4 V (unless otherwise noted)  
J
I
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
SUPPLY VOLTAGE, VIN  
Input voltage range, VIN  
3.0  
4.0  
V
f
= 350 kHz, SYNC 0.8 V, RT open,  
s
9.8  
17.0  
PH pin open  
f
= 550 kHz, SYNC 2.5 V, RT open,  
I
Quiescentcurrent  
mA  
s
(Q)  
14.0  
1
23.0  
1.4  
PH pin open  
Shutdown, SS/ENA = 0 V  
UNDER VOLTAGE LOCK OUT  
Start threshold voltage, UVLO  
2.95  
2.80  
0.16  
2.5  
3.0  
V
V
Stop threshold voltage, UVLO  
Hysteresis voltage, UVLO  
2.70  
0.14  
V
(1)  
Rising and falling edge deglitch, UVLO  
µs  
BIAS VOLTAGE  
Output voltage, VBIAS  
Output current, VBIAS  
I
= 0  
2.70  
2.80  
2.90  
100  
V
(VBIAS)  
(2)  
µA  
CUMULATIVE REFERENCE  
V
ref  
Accuracy  
0.882 0.891  
0.900  
V
REGULATION  
I
L
I
L
I
L
I
L
= 4.5 A, f = 350 kHz,  
T
T
= 85°C  
= 85°C  
0.07  
0.07  
0.03  
0.03  
s
J
J
(1)(3)  
Lineregulation  
%/V  
%/A  
= 4.5 A, f = 550 kHz,  
s
= 0 A to 9 A, f = 350 kHz,  
T
T
= 85°C  
= 85°C  
s
J
J
(1)(3)  
Loadregulation  
= 0 A to 9 A, f = 550 kHz,  
s
OSCILLATOR  
Internallysetfreerunningfrequency  
SYNC 0.8 V, RT open  
SYNC 2.5 V, RT open  
280  
440  
252  
460  
663  
2.5  
350  
550  
280  
500  
700  
420  
660  
308  
540  
762  
kHz  
kHz  
RT = 180 k(1% resistor to AGND)  
RT = 100 k(1% resistor to AGND)  
RT = 68 k(1% resistor to AGND)  
Externally setfree running frequency range  
High level threshold, SYNC  
V
V
Low level threshold, SYNC  
0.8  
Pulseduration, externalsynchronization,  
SYNC  
50  
ns  
(1)  
(1)  
Frequency range, SYNC  
(1)  
330  
700  
kHz  
V
Ramp valley  
Rampamplitude(peak-to-peak)  
(1)  
0.75  
1
(1)  
V
Minimumcontrollableontime  
(1)  
200  
ns  
Maximum duty cycle  
90%  
(1)  
(2)  
(3)  
Specified by design  
Static resistive loads only  
Specified by the circuit used in Figure 10  
3
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
www.ti.com  
ELECTRICAL CHARACTERISTICS (continued)  
T = 40°C to 125°C, V = 3 V to 4 V (unless otherwise noted)  
J
I
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
ERROR AMPLIFIER  
(1)  
1 kCOMP to AGND  
Error amplifier open loop voltage gain  
Error amplifier unity gain bandwidth  
90  
3
110  
5
dB  
(1)  
Parallel 10 k, 160 pF COMP to AGND  
MHz  
Error amplifier common mode input voltage  
range  
(1)  
Powered by internal LDO  
0
VBIAS  
250  
V
Input bias current, VSENSE  
VSENSE = V  
ref  
60  
nA  
Output voltage slew rate (symmetric), COMP  
1.0  
1.4  
V/µs  
PWM COMPARATOR  
PWMcomparatorpropagationdelaytime,  
PWM comparator input to PH pin  
(excludingdeadtime)  
(1)  
10-mVoverdrive  
70  
85  
ns  
SLOW-START/ENABLE  
Enable threshold voltage, SS/ENA  
Enable hysteresis voltage, SS/ENA  
0.82  
1.2  
0.03  
2.5  
3.35  
5
1.4  
V
V
(1)  
(1)  
Falling edge deglitch, SS/ENA  
µs  
ms  
µA  
mA  
Internal slow-start time  
2.6  
3
4.1  
8
Charge current, SS/ENA  
Discharge current, SS/ENA  
SS/ENA = 0 V  
SS/ENA = 1.3 V, V = 1.5 V  
I
1.5  
2.3  
4.0  
POWER GOOD  
Power good threshold voltage  
Power good hysteresis voltage  
VSENSEfalling  
90  
3
%V  
%V  
ref  
(1)  
(1)  
ref  
Power good falling edge deglitch  
35  
µs  
Output saturation voltage, PWRGD  
Leakage current, PWRGD  
I
= 2.5 mA  
0.18  
0.3  
1
V
(sink)  
V = 5.5 V  
µA  
I
CURRENT LIMIT  
Currentlimit  
(1)  
V = 3.3 V , Output shorted  
11  
15  
100  
200  
A
I
Current limit leading edge blanking time  
Current limit total response time  
ns  
ns  
THERMAL SHUTDOWN  
Thermal shutdown trip point  
(1)  
(1)  
135  
150  
10  
165  
°C  
°C  
Thermalshutdownhysteresis  
OUTPUT POWER MOSFETS  
(4)  
V = 3 V  
15  
14  
30  
28  
I
r
Power MOSFET switches  
mΩ  
DS(on)  
(4)  
V = 3.6 V  
I
(1)  
(2)  
(3)  
(4)  
Specified by design  
Static resistive loads only  
Specified by the circuit used in Figure 10  
MatchedMOSFETs low-side r production tested, high-side r  
production tested.  
DS(on) DS(on)  
4
www.ti.com  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
PWP PACKAGE  
(TOP VIEW)  
1
28  
AGND  
VSENSE  
COMP  
PWRGD  
BOOT  
PH  
RT  
2
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
SYNC  
SS/ENA  
VBIAS  
VIN  
VIN  
VIN  
3
4
5
6
7
PH  
PH  
PH  
PH  
PH  
PH  
PH  
PH  
THERMAL  
PAD  
8
VIN  
VIN  
9
10  
11  
12  
13  
14  
PGND  
PGND  
PGND  
PGND  
PGND  
TERMINAL FUNCTIONS  
TERMINAL  
DESCRIPTION  
NAME  
AGND  
NO.  
1
Analogground. Returnforcompensationnetwork/outputdivider, slow-start capacitor, VBIAS capacitor, RT resistor and  
SYNC pin. Connect PowerPAD to AGND.  
BOOT  
5
3
Bootstrapoutput. 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates floating drive for the  
high-side FET driver.  
COMP  
PGND  
Error amplifier output. Connect frequency compensation network from COMP to VSENSE  
1519 Powerground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper areas  
totheinputandoutputsupplyreturns,andnegativeterminalsoftheinputandoutputcapacitors.Asinglepointconnection  
to AGND is recommended.  
PH  
614 Phase output. Junction of the internal high-side and low-side power MOSFETs, and output inductor.  
PWRGD  
4
Powergoodopendrainoutput. HighwhenVSENSE90% V , otherwise PWRGD is low. Note that output is low when  
SS/ENA is low or the internal shutdown signal is active.  
ref  
RT  
28  
26  
Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency, f .  
s
SS/ENA  
Slow-start/enable input/output. Dual function pin which provides logic input to enable/disable device operation and  
capacitorinput to externally set the start-up time.  
SYNC  
VBIAS  
27  
25  
Synchronization input. Dual function pin which provides logic input to synchronize to an external oscillator or pin select  
betweentwo internally set switching frequencies. When used to synchronize to an external signal, a resistor must be  
connectedto the RT pin.  
Internalbias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a  
high-quality, low-ESR 0.1-µF to 1.0-µF ceramic capacitor.  
2024 InputsupplyforthepowerMOSFETswitchesandinternalbiasregulator. Bypass VIN pins to PGND pins close todevice  
packagewith a high-quality, low-ESR 10-µF ceramic capacitor.  
VIN  
VSENSE  
2
Error amplifier inverting input. Connect to output voltage compensation network/output divider.  
5
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
www.ti.com  
INTERNAL BLOCK DIAGRAM  
VBIAS  
AGND  
VBIAS  
VIN  
Enable  
Comparator  
SS/ENA  
REG  
Falling  
Edge  
SHUTDOWN  
VIN  
ILIM  
Comparator  
1.2 V  
3 6 V  
Deglitch  
Thermal  
Shutdown  
150°C  
Hysteresis: 0.03 V  
Leading  
Edge  
2.5 µs  
Blanking  
VIN UVLO  
Comparator  
Falling  
100 ns  
and  
Rising  
Edge  
VIN  
BOOT  
2.95 V  
Deglitch  
Hysteresis: 0.16 V  
15 mΩ  
2.5 µs  
SS_DIS  
SHUTDOWN  
L
OUT  
V
O
PH  
Internal/External  
Slow-start  
(Internal Slow-start Time = 3.35 ms  
+
C
O
Adaptive Dead-Time  
and  
Control Logic  
R
S
Q
Error  
Amplifier  
PWM  
Comparator  
Reference  
VIN  
VREF = 0.891 V  
15 mΩ  
OSC  
PGND  
Powergood  
Comparator  
PWRGD  
VSENSE  
0.90 V  
Falling  
Edge  
Deglitch  
ref  
TPS54910  
Hysteresis: 0.03 Vref  
SHUTDOWN  
35 µs  
SYNC  
VSENSE  
COMP  
RT  
RELATED DC/DC PRODUCTS  
D
D
D
TPS40000dc/dc controller  
TPS56300dc/dc controller  
PT6600 series9 A plugin modules  
6
www.ti.com  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
TYPICAL CHARACTERISTICS  
DRAIN-SOURCE  
DRAIN-SOURCE  
INTERNALLY SET  
ON-STATE RESISTANCE  
vs  
JUNCTION TEMPERATURE  
ON-STATE RESISTANCE  
OSCILLATOR FREQUENCY  
vs  
vs  
JUNCTION TEMPERATURE  
750  
JUNCTION TEMPERATURE  
25  
20  
25  
VIN = 3.0 V  
VIN = 3.6 V  
I
= 9 A  
O
I
= 9 A  
O
20  
15  
650  
SYNC 2.5 V  
15  
10  
550  
10  
5
450  
SYNC 0.8 V  
5
0
350  
250  
0
40  
40  
0
25  
85  
125  
0
25  
85  
125  
40  
0
25  
85  
125  
T
J
Junction Temperature °C  
T
J
Junction Temperature °C  
T
J
Junction Temperature °C  
Figure 1  
EXTERNALLY SET  
OSCILLATOR FREQUENCY  
vs  
Figure 2  
Figure 3  
VOLTAGE REFERENCE  
vs  
JUNCTION TEMPERATURE  
DEVICE POWER LOSSES  
vs  
LOAD CURRENT  
JUNCTION TEMPERATURE  
8
7
6
5
4
3
2
1
0
0.895  
0.893  
0.891  
0.889  
800  
700  
600  
V
= 3.3 V  
= 125°C  
I
T
J
RT = 68 kΩ  
RT = 100 kΩ  
RT = 180 kΩ  
500  
400  
300  
200  
0.887  
0.885  
0
2
4
6
8
10 12 14 16  
40  
0
25  
85  
125  
40  
0
25  
85  
125  
I
Load Current A  
T
J
Junction Temperature °C  
T
J
Junction Temperature °C  
L
Figure 6  
Figure 4  
Figure 5  
OUTPUT VOLTAGE REGULATION  
INTERNAL SLOW-START TIME  
vs  
JUNCTION TEMPERATURE  
ERROR AMPLIFIER  
OPEN LOOP RESPONSE  
vs  
INPUT VOLTAGE  
0.895  
0
140  
3.80  
R
C
T
= 10 k,  
= 160 pF,  
= 25°C  
L
L
A
20  
120  
100  
80  
3.65  
3.50  
40  
60  
80  
0.893  
0.891  
0.889  
Phase  
Gain  
3.35  
100  
120  
140  
160  
180  
200  
60  
3.20  
3.05  
40  
20  
0.887  
0.885  
2.90  
2.75  
0
20  
1
10 100 1 k 10 k 100 k 1 M 10 M  
3
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
40  
0
25  
85  
125  
V Input Voltage V  
I
f Frequency Hz  
T
J
Junction Temperature °C  
Figure 7  
Figure 8  
Figure 9  
7
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
www.ti.com  
APPLICATION INFORMATION  
Figure 10 shows the schematic diagram for a typical  
TPS54910 application. The TPS54910 (U1) can provide  
up to 9 A of output current at a nominal output voltage of  
1.8 V. For proper thermal performance, the exposed  
thermal PowerPAD underneath the integrated circuit,  
TPS54910, package must be soldered to the  
printed-circuit board.  
V
I
C10  
C12  
U1  
10 µF  
10 µF  
TPS54910PWP  
R6  
28  
71.5 kΩ  
27  
24  
23  
RT  
VIN  
VIN  
VIN  
VIN  
VIN  
PH  
PH  
PH  
PH  
PH  
PH  
PH  
PH  
22  
21  
R7  
10 kΩ  
SYNC  
SS/ENA  
26  
25  
4
20  
14  
13  
C6  
0.047 µF  
C3  
VBIAS  
PWRGD  
COMP  
12  
1 µF  
C4  
11  
L1  
10  
9
0.65 µH  
C1  
R2  
R3  
10 kΩ  
3
V
O
8
7
6
C8  
22 µF  
C7  
22 µF  
C5  
22 µF  
301 Ω  
1000 pF  
R1  
3300 pF  
C2  
PH  
BOOT  
PGND  
PGND  
C9  
150 pF  
2
1
5
VSENSE  
10 Ω  
19  
18  
17  
16  
15  
0.047 µF  
R7  
2.4 Ω  
R4  
9.76 kΩ  
PGND  
PGND  
PGND  
AGND  
C11  
3300 pF  
POWERPAD  
Analog and Power Grounds Are Tied at the Pad Under the Package of IC  
Figure 10. Application Circuit  
COMPONENT SELECTION  
FEEDBACK CIRCUIT  
The values for the components used in this design  
example were selected for best load transient response  
and small PCB area. Additional design information is  
available at www.ti.com.  
The values for these components are selected to provide  
fast transient response times.  
The resistor divider network of R1 and R4 sets the output  
voltage for the circuit at 1.8 V. R1 along with R2, R3, C1,  
C2, and C4 forms the loop compensation network for the  
circuit. For this design, a Type-3 topology is used.  
INPUT FILTER  
The input voltage is a nominal 3.3 VDC. The input filter  
(C10) is a 10-µF ceramic capacitor (Taiyo Yuden). C12 is  
also a 10-µF ceramic capacitor (Taiyo Yuden) that  
provides high-frequency decoupling of the TPS54910  
from the input supply. C12 must be located as close as  
possibletothedevice. RipplecurrentiscarriedinbothC10  
and C12, and the return path to PGND must avoid the  
currentcirculatingintheoutputcapacitorsC5, C7, andC8.  
OPERATING FREQUENCY  
Intheapplicationcircuit,RTisgroundedthrougha71.5-kΩ  
resistor to select the operating frequency of 700 kHz. To  
set a differentfrequency, place a 68-kto 180-kresistor  
between RT (pin 28) and analog ground or leave RT  
floatingtoselectthedefaultof350kHz.Theresistancecan  
be approximated using the following equation:  
500 kHz  
Switching Frequency  
R +  
  100 [kW]  
(1)  
8
www.ti.com  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
4-layer board. Documentation for the TPS54910  
evaluationmodule can be found on the TexasInstruments  
web site under the TPS54910 product folder.  
OUTPUT FILTER  
The output filter is composed of a 0.65-µH inductor and  
3 x 22-µF capacitor. The inductor is a low dc-resistance  
(.017 ) type, Pulse Engineering PA0277. The capacitors  
used are 22-µF, 6.3-V ceramic types with X5R dielectric.  
The feedback loop is compensated so that the unity gain  
frequency is approximately 75 kHz.  
LAYOUT CONSIDERATIONS FOR THERMAL  
PERFORMANCE  
For operation at full rated load current, the analog ground  
plane must provide an adequate heat dissipating area. A  
3-inchby3-inchplaneof1ouncecopperisrecommended,  
thoughnotmandatory,dependingonambienttemperature  
andairflow. Most applicationshavelargerareasofinternal  
ground plane available, and the PowerPAD must be  
connected to the largest area available. Additional areas  
on the top or bottom layers also help dissipate heat, and  
any area available must be used when 6 A or greater  
operationis desired. Connection from theexposedareaof  
the PowerPAD to the analog ground plane layer must be  
made using 0.013-inch diameter vias to avoid solder  
wicking through the vias.  
GROUNDING AND POWERPAD LAYOUT  
The TPS54910 has two internal grounds (analog and  
power).Inside the TPS54910, the analog ground ties to all  
of the noise sensitive signals, while the power ground ties  
to the noisier power signals. The PowerPAD must be tied  
directlyto AGND. Noise injected between the two grounds  
can degrade the performance of the TPS54910,  
particularly at higher output currents. However, ground  
noiseonananaloggroundplanecanalsocauseproblems  
with some of the control and bias signals. For these  
reasons, separate analog and power ground planes are  
recommended. These two planes must tie together  
directlyattheICtoreducenoisebetweenthetwogrounds.  
The only components that must tie directly to the power  
groundplane are the input capacitor, the output capacitor,  
theinputvoltagedecouplingcapacitor, andthePGNDpins  
of the TPS54910. The layout of the TPS54910 evaluation  
module is representative of a recommended layout for a  
Eight vias must be in the PowerPAD area with four  
additionalviaslocatedunderthedevicepackage.Thesize  
of the vias under the package, but not in the exposed  
thermal pad area, can be increased to 0.018. Additional  
vias beyond the twelve recommended that enhance  
thermalperformance must be included in areas not under  
the device package.  
Minimum Recommended Thermal Vias: 8 x 0.013 Diameter Inside  
Powerpad Area 4 x 0.018 Diameter Under Device as Shown.  
Additional 0.018 Diameter Vias May Be Used if Top Side Analog Ground  
Area Is Extended.  
Ø0.0130  
8 PL  
4 PL Ø0.0180  
Connect Pin 1 to Analog Ground Plane  
in This Area for Optimum Performance  
0.0150  
0.06  
0.0339  
0.0650  
0.0500  
0.3820 0.3478  
0.2090  
0.0256  
0.0500  
0.0500  
0.0650  
0.0339  
Minimum Recommended Exposed  
Copper Area for Powerpad. 5mm  
Stencils May Require 10 Percent  
0.1700  
Larger Area  
0.1340  
0.0630  
Minimum Recommended Top  
Side Analog Ground Area  
0.0400  
Figure 11. Recommended Land Pattern for 28-Pin PWP PowerPAD  
9
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
www.ti.com  
PERFORMANCE GRAPHS  
EFFICIENCY  
vs  
OUTPUT CURRENT  
LOAD REGULATION  
vs  
OUTPUT CURRENT  
LINE REGULATION  
vs  
INPUT VOLTAGE  
100  
1.003  
1.002  
1.001  
f
= 700 kHz,  
s
95  
90  
85  
80  
75  
70  
65  
1.0008  
T
A
= 25°C,  
V
= 3.3 V,  
I
1.0006  
1.0004  
V
= 1.8 V  
O
I
= 9 A  
O
O
I
= 0 A  
1.001  
0
O
1.0002  
1
0.9998  
0.9996  
0.999  
0.998  
0.997  
I
= 4.5 A  
f
= 700 kHz,  
s
f
V
= 700 kHz,  
= 3.3 V,  
60  
55  
50  
s
I
0.9994  
0.9992  
0.999  
T
A
= 25°C,  
V
= 3.3 V,  
I
V
= 2.5 V  
O
V
= 1.8 V  
O
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
2
4
6
8
10  
3
3.2  
3.4  
3.6  
3.8  
4
I
Output Current A  
I
Output Current A  
O
O
V Input Voltage V  
I
Figure 12  
Figure 13  
Figure 14  
AMBIENTTEMPERATURE  
vs  
(1)  
OUTPUT RIPPLE VOLTAGE  
TRANSIENT RESPONSE  
LOAD CURRENT  
125  
115  
105  
95  
V
V
= 3.3 V,  
= 1.8 V  
f
I
V
= 700 kHz,  
= 9 A,  
= 3.3 V,  
I
O
s
O
I
f
T
V
V
= 700 kHz,  
= 125°C,  
= 3.3 V,  
s
J
I
V
= 1.8 V  
O
= 1.8 V  
O
85  
75  
65  
55  
45  
2 A to 6.5 A  
35  
25  
t Time 5 µs/div  
t Time 1 µs/div  
0
2
4
6
8
10 12 14 16  
I
Output Current A  
O
Figure 15  
Figure 16  
Figure 17  
SLOW-START TIMING  
V
V
= 3.3 V,  
I
= 1.8 V  
O
0.047 µf  
slow-start capacitor  
t Time 5 ms/div  
Figure 18  
(1)  
Safeoperating area is applicable to the test board conditions in the Dissipation Ratings  
10  
www.ti.com  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
DETAILED DESCRIPTION  
VBIAS REGULATOR (VBIAS)  
The VBIAS regulator provides internal analog and digital  
blocks with a stable supply voltage over variations in  
junction temperature and input voltage. A high quality,  
low-ESR, ceramic bypass capacitor is required on the  
VBIAS pin. X7R or X5R grade dielectrics are  
recommendedbecause their values are more stable over  
temperature. The bypass capacitor must be placed close  
to the VBIAS pin and returned to AGND.  
UNDERVOLTAGE LOCK OUT (UVLO)  
The TPS54910 incorporates an under voltage lockout  
circuit to keep the device disabled when the input voltage  
(VIN) is insufficient. During power up, internal circuits are  
held inactive until VIN exceeds the nominal UVLO  
thresholdvoltageof2.95V.OncetheUVLOstartthreshold  
is reached, device start-up begins. The device operates  
until VIN falls below the nominal UVLO stop threshold of  
2.8 V. Hysteresis in the UVLO comparator, and a 2.5-µs  
risingandfallingedgedeglitchcircuitreducethelikelihood  
of shutting the device down due to noise on VIN.  
Externalloading on VBIAS is allowed, with the cautionthat  
internal circuits require a minimum VBIAS of 2.70 V, and  
external loads on VBIAS with ac or digital switching noise  
may degrade performance. The VBIAS pin may be useful  
as a reference voltage for external circuits.  
SLOW-START/ENABLE (SS/ENA)  
VOLTAGE REFERENCE  
Theslow-start/enablepinprovidestwofunctions.First,the  
pin acts as an enable (shutdown) control by keeping the  
device turned off until the voltage exceeds the start  
threshold voltage of approximately 1.2 V. When SS/ENA  
exceedsthe enablethreshold, devicestart-upbegins. The  
reference voltage fed to the error amplifier is linearly  
ramped up from 0 V to 0.891 V in 3.35 ms. Similarly, the  
converter output voltage reaches regulation in  
approximately 3.35 ms. Voltage hysteresis and a 2.5-µs  
falling edge deglitch circuit reduce the likelihood of  
triggering the enable due to noise.  
The voltage reference system produces a precise V  
ref  
signal by scaling the output of a temperature stable  
bandgap circuit. During manufacture, the bandgap and  
scaling circuits are trimmed to produce 0.891 V at the  
output of the error amplifier, with the amplifier connected  
as a voltage follower. The trim procedure adds to the high  
precision regulation of the TPS54910, since it cancels  
offset errors in the scale and error amplifier circuits.  
OSCILLATOR AND PWM RAMP  
The oscillator frequency can be set to internally fixed  
values of 350 kHz or 550 kHz using the SYNC pin as a  
static digital input. If a different frequency of operation is  
requiredfortheapplication,theoscillatorfrequencycanbe  
externally adjusted from 280 to 700 kHz by connecting a  
resistor between the RT pin to ground and floating the  
SYNC pin. The switching frequency is approximated by  
the following equation, where R is the resistance from RT  
to AGND:  
The second function of the SS/ENA pin provides an  
external means of extending the slow-start time with a  
low-value capacitor connected between SS/ENA and  
AGND.  
Adding a capacitor to the SS/ENA pin has two effects on  
start-up. First, a delay occurs between release of the  
SS/ENA pin and start-up of the output. The delay is  
proportional to the slow-start capacitor value and lasts  
until the SS/ENA pin reaches the enable threshold. The  
start-up delay is approximately:  
(4)  
100 kW  
Switching Frequency +  
  500 [kHz]  
R
External synchronization of the PWM ramp is possible  
over the frequency range of 330 kHz to 700 kHz by driving  
a synchronization signal into SYNC and connecting a  
resistor from RT to AGND. Choose a RT resistor that sets  
the free running frequency to 80% of the synchronization  
signal. The following table summarizes the frequency  
selection configurations:  
(2)  
1.2 V  
t + C  
 
d
(SS)  
5 mA  
Second, as the output becomes active, a brief ramp-up at  
the internal slow-start rate may be observed before the  
externally set slow-start rate takes control and the output  
rises at a rate proportional to the slow-start capacitor. The  
slow-start time set by the capacitor is approximately:  
SWITCHING  
FREQUENCY  
SYNC PIN  
RT PIN  
350kHz, internally set Float or AGND  
Float  
Float  
550kHz, internally set 2.5 V  
(3)  
0.7 V  
t
+ C  
 
Externally set 280  
Float  
(SS)  
(SS)  
R = 68 kto 180 kΩ  
5 mA  
kHz to 700 kHz  
Externally  
R = RT value for 80%  
of external synchro-  
nizationfrequency  
Synchronization  
synchronized  
signal  
Theactualslow-starttimeislikelytobelessthantheabove  
approximationdue to the brief ramp-up attheinternalrate.  
frequency  
11  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
www.ti.com  
during the switching transitions by actively controlling the  
turnon times of the MOSFET drivers. The high-side driver  
doesnotturnonuntilthevoltageatthegateofthelow-side  
FET is below 2 V. While the low-side driver does not turn  
on until the voltage at the gate of the high-side MOSFET  
is below 2 V.  
ERROR AMPLIFIER  
The high performance, wide bandwidth, voltage error  
amplifier sets the TPS54910 apart from most dc/dc  
converters. The user is given the flexibility to use a wide  
range of output L and C filter components to suit the  
particular application needs. Type-2 or Type-3  
compensation can be employed using external  
compensation components.  
The high-side and low-side drivers are designed with  
300-mA source and sink capability to quickly drive the  
power MOSFETs gates. The low-side driver is supplied  
from VIN, while the high-side drive is supplied from the  
BOOT pin. A bootstrap circuit uses an external BOOT  
capacitor and an internal 2.5-bootstrap switch  
connected between the VIN and BOOT pins. The  
integrated bootstrap switch improves drive efficiency and  
reduces external component count.  
PWM CONTROL  
Signals from the error amplifier output, oscillator, and  
current limit circuit are processed by the PWM control  
logic. Referring to the internal block diagram, the control  
logic includes the PWM comparator, OR gate, PWMlatch,  
and portions of the adaptive dead-time and control-logic  
block. During steady-state operation below the current  
limit threshold, the PWM comparator output and oscillator  
pulse train alternately reset and set the PWM latch. Once  
the PWM latch is set, the low-side FET remains on for a  
minimumduration set by the oscillator pulse width. During  
this period, the PWM ramp discharges rapidly to its valley  
voltage. When the ramp begins to charge back up, the  
low-side FET turns off and high-side FET turns on. As the  
PWM ramp voltage exceeds the error amplifier output  
voltage, the PWM comparator resets the latch, thus  
turning off the high-side FET and turning on the low-side  
FET. The low-side FET remains on until the next oscillator  
pulse discharges the PWM ramp.  
OVERCURRENT PROTECTION  
The cycle-by-cycle current limiting is achieved by sensing  
the current flowing through the high-side MOSFET and  
comparing this signal to a preset overcurrent threshold.  
The high side MOSFET is turned off within 200 ns of  
reachingthecurrentlimitthreshold. A100-nsleadingedge  
blanking circuit prevents current limit false tripping.  
Currentlimitdetectionoccursonlywhencurrentflowsfrom  
VIN to PH when sourcing current to the output filter. Load  
protection during current sink operation is provided by  
thermal shutdown.  
THERMAL SHUTDOWN  
During transient conditions, the error amplifier output  
could be below the PWM ramp valley voltage or above the  
PWM peak voltage. If the error amplifier is high, the PWM  
latchisneverreset, andthehigh-sideFETremainsonuntil  
the oscillator pulse signals the control logic to turn the  
high-side FET off and the low-side FET on. The device  
operatesatitsmaximumdutycycleuntiltheoutputvoltage  
rises to the regulation set-point, setting VSENSE to  
approximately the same voltage as VREF. If the error  
amplifier output is low, the PWM latch is continually reset  
and the high-side FET does not turn on. The low-side FET  
remains on until the VSENSE voltage decreases to a  
range that allows the PWM comparator to change states.  
The TPS54910 is capable of sinking current continuously  
until the output reaches the regulation set-point.  
Thedeviceusesthethermalshutdowntoturnoffthepower  
MOSFETs and disable the controller if the junction  
temperatureexceeds 150°C. The device is released from  
shutdown automatically when the junction temperature  
decreases to 10°C below the thermal shutdown trip point,  
and starts up under control of the slow-start circuit.  
Thermal shutdown provides protection when an overload  
condition is sustained for several milliseconds. With a  
persistent fault condition, the device cycles continuously;  
startingupbycontrolofthesoft-startcircuit,heatingupdue  
to the fault condition, and then shutting down upon  
reaching the thermal shutdown trip point. This sequence  
repeats until the fault condition is removed.  
POWER-GOOD (PWRGD)  
If the current limit comparator trips for longer than 100 ns,  
the PWM latch resets before the PWM ramp exceeds the  
error amplifier output. The high-side FET turns off and  
low-sideFETturnsontodecreasetheenergyintheoutput  
inductor and consequently the output current. This  
process is repeated each cycle in which the current limit  
comparator is tripped.  
The power good circuit monitors for under voltage  
conditions on VSENSE. If the voltage on VSENSE is 10%  
below the reference voltage, the open-drain PWRGD  
output is pulled low. PWRGD is also pulled low if VIN is  
lessthantheUVLOthresholdor SS/ENA is low. WhenVIN  
UVLO threshold, SS/ENA enable threshold, and  
VSENSE > 90% of V , the open drain output of the  
PWRGD pin is high. A hysteresis voltage equal to 3% of  
ref  
DEAD-TIME CONTROL AND MOSFET  
DRIVERS  
V
ref  
and a 35 µs falling edge deglitch circuit prevent  
Adaptive dead-time control prevents shoot-through  
current from flowing in both N-channel power MOSFETs  
tripping of the power good comparator due to high  
frequency noise.  
12  
www.ti.com  
TPS54910  
SLVS421B MARCH 2002 REVISED AUGUST 2002  
MECHANICAL DATA  
PWP (R-PDSO-G**)  
POWERPAD PLASTIC SMALL-OUTLINE  
20 PINS SHOWN  
0,30  
0,19  
M
0,65  
20  
0,10  
11  
ThermalPad  
(See Note D)  
0,15 NOM  
4,50  
4,30  
6,60  
6,20  
Gage Plane  
1
10  
0,25  
A
0°ā8°  
0,75  
0,50  
SeatingPlane  
0,10  
0,15  
0,05  
1,20 MAX  
PINS **  
14  
16  
20  
24  
28  
DIM  
5,10  
4,90  
5,10  
4,90  
6,60  
6,40  
7,90  
7,70  
9,80  
9,60  
A MAX  
A MIN  
4073225/F10/98  
NOTES:A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusions.  
D. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.  
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.  
E. Falls within JEDEC MO-153  
PowerPAD is a trademark of TexasInstruments.  
13  
THERMAL PAD MECHANICAL DATA  
PWP (R-PDSO-G28)  
PowerPADPLASTIC SMALL-OUTLINE  
www.ti.com  
IMPORTANT NOTICE  
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enhancements, improvements, and other changes to its products and services at any time and to discontinue  
any product or service without notice. Customers should obtain the latest relevant information before placing  
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and conditions of sale supplied at the time of order acknowledgment.  
TI warrants performance of its hardware products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI  
deems necessary to support this warranty. Except where mandated by government requirements, testing of all  
parameters of each product is not necessarily performed.  
TI assumes no liability for applications assistance or customer product design. Customers are responsible for  
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TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,  
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