TPS65632RTET [TI]
三路输出 AMOLED 显示电源 | RTE | 16 | -40 to 85;型号: | TPS65632RTET |
厂家: | TEXAS INSTRUMENTS |
描述: | 三路输出 AMOLED 显示电源 | RTE | 16 | -40 to 85 驱动 接口集成电路 |
文件: | 总27页 (文件大小:1671K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TPS65632
ZHCSDG2 –MARCH 2015
TPS65632 三路输出 AMOLED 显示屏电源
1 特性
(WQFN) 封装
1
•
•
2.9V 至 4.5V 输入电压范围
升压转换器 1 (VPOS
2 应用范围
)
AMOLED 显示屏
–
–
–
–
4.6V 输出电压
0.5% 精度(25°C 至 85°C)
专用输出感测引脚
3 说明
TPS65632 设计用于驱动需要 3 个电源
300mA 输出电流
轨(VPOS、VNEG 和 AVDD)的有源矩阵有机发光二极
管 (AMOLED) 显示屏。 该器件分别为 VPOS、VNEG 和
AVDD 集成了升压转换器、反向降压-升压转换器以及升
压转换器,这些转换器均适用于电池供电产品。 数字
控制引脚 (CTRL) 允许用数字步长设定负输出电压。
TPS65632 采用全新技术,可提供出色的线路与负载
调节性能。
•
•
反向降压-升压转换器 (VNEG)
–
–
–
–1.5V 至 5.4V 可编程输出电压
–4V 默认输出电压
300mA 输出电流
升压转换器 2 (AVDD
)
–
–
5.8V 或 7.7V 输出电压
30mA 输出电流
器件信息(1)
•
•
•
•
出色的线路瞬态稳压
器件型号
封装
封装尺寸(标称值)
短路保护功能
TPS65632
WQFN (16)
3.00mm x 3.00mm
热关断
(1) 如需了解所有可用封装,请见数据表末尾的可订购产品附录。
3mm × 3mm 16 引脚超薄型四方扁平无引线
4 简化电路原理图
L1
4.7 µH
效率与输出电流间的关系
VI
100
PVIN
AVIN
SWP1
2.9 V to 4.5 V
AVDD
VPOS & VNEG
VPOS
4.6 V / 300 mA
C1
90
OUTP1
FBS
3×10 µF
C5
100 nF
C2
80
70
60
50
40
30
20
10 µF
TPS65632
L2
10 µH
VNEG
±4.0 V / 300 mA
SWP2
OUTN
C3
2×10 µF
Enable AVDD
Enable / Program VNEG
EN
CTRL
AVDD
7.7 V / 30 mA
OUTP2
L3
C6
10 µF
SELP2
AGND
PGND1
PGND2
4.7 µH
SWN
CT
10
VPOS = 4.6 V,VNEG = –4.0 V,AVDD = 7.7 V
C4
100 nF
0
1m
10m
100m
300m
Output Current (A)
G000
1
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
English Data Sheet: SLVSCY2
TPS65632
ZHCSDG2 –MARCH 2015
www.ti.com.cn
目录
8.2 Functional Block Diagram ......................................... 8
8.3 Feature Description................................................... 9
8.4 Device Functional Modes........................................ 12
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application ................................................. 13
1
2
3
4
5
6
7
特性.......................................................................... 1
应用范围................................................................... 1
说明.......................................................................... 1
简化电路原理图........................................................ 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information.................................................. 4
7.5 Electrical Characteristics........................................... 5
7.6 Timing Requirements................................................ 6
7.7 Typical Characteristics.............................................. 7
Detailed Description .............................................. 8
8.1 Overview ................................................................... 8
9
10 Power Supply Recommendations ..................... 19
11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
11.2 Layout Example .................................................... 19
12 器件和文档支持 ..................................................... 20
12.1 器件支持................................................................ 20
12.2 商标....................................................................... 20
12.3 静电放电警告......................................................... 20
12.4 术语表 ................................................................... 20
13 机械、封装和可订购信息....................................... 20
8
5 修订历史记录
日期
修订版本
注释
2015 年 3 月
*
最初发布版本
2
Copyright © 2015, Texas Instruments Incorporated
TPS65632
www.ti.com.cn
ZHCSDG2 –MARCH 2015
6 Pin Configuration and Functions
RTE Package
16-Pin WQFN with Thermal Pad
Top View
SWP1
PGND1
OUTP1
FBS
1
2
3
4
12 PVIN
11 SWN
Exposed
Thermal
Pad
10 OUTN
9
CTRL
Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
AGND
AVIN
NO.
7
GND
PWR
Analog ground.
16
Supply voltage for the device.
A capacitor connected between this pin and ground sets the transition time for VNEG
when programmed to a new value.
CT
6
I/O
CTRL
EN
9
8
I
I
Boost converter 1 (VPOS) inverting buck-boost converter (VNEG) enable/program.
Boost converter 2 (AVDD) enable.
FBS
4
I
Boost converter 1 (VPOS) sense input.
OUTN
OUTP
OUTP2
PGND1
PGND2
PVIN
10
3
O
Inverting buck-boost converter output (VNEG).
Boost converter 1 output (VPOS).
O
13
2
O
Boost converter 2 output (AVDD).
GND
GND
PWR
Boost converter 1 power ground.
14
12
Boost converter 2 power ground.
Inverting buck-boost converter power stage supply voltage.
Boost converter 2 output voltage selection pin. AVDD = 7.7 V when SELP2 = low and
5.8 V when SELP2 = high.
SELP2
5
I
SWN
11
1
I/O
I
Inverting buck-boost converter switch pin.
Boost converter 1 switch pin.
SWP1
SWP2
15
I
Boost converter 2 switch pin.
Exposed thermal pad
—
Connect this pad to AGND, PGND1 and PGND2.
(1) GND = Ground, PWR = Power, I = Input, O = Output, I/O = Input/Output
Copyright © 2015, Texas Instruments Incorporated
3
TPS65632
ZHCSDG2 –MARCH 2015
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
–6.0
–6.5
–0.3
–0.3
–40
MAX
UNIT
V
SWP1, OUTP1, FBS, PVIN, AVIN
5
12
SWP2
V
OUTP2
8.5
0.3
4.8
5.5
3.6
150
150
V
Input supply voltage(2)
OUTN
V
SWN
V
CTRL, EN, SELP2
CT
V
V
Operating virtual junction, TJ
Storage temperature, Tstg
°C
°C
–65
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.
(2) With respect to GND pin.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX UNIT
INPUT
VI
Input supply voltage range
2.9
3.7
85
4.5
V
TJ
Operating junction temperature
–40
125
°C
7.4 Thermal Information
RTE [WQFN]
16 PINS
42.9
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
44
14.2
°C/W
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.6
ψJB
14.1
RθJC(bot)
3.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
Copyright © 2015, Texas Instruments Incorporated
TPS65632
www.ti.com.cn
ZHCSDG2 –MARCH 2015
7.5 Electrical Characteristics
VI = 3.7 V, CTRL = 3.7 V, EN = 3.7 V, VPOS = 4.6 V, VNEG = –4.0 V, AVDD = 7.7 V, TJ = –40°C to 85°C, typical values are at TJ
= 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
SUPPLY CURRENT AND THERMAL PROTECTION
VI
Input voltage range
Shutdown current
2.9
3.7
4.5
5
V
CTRL = GND, EN = GND, sum of current flowing into
AVIN and PVIN
ISD
0.25
µA
VI falling
VI rising
1.8
2.1
2.1
2.5
V
V
VUVLO
Under-voltage lockout threshold
BOOST CONVERTER 1 (VPOS
)
Positive output 1 voltage
4.6
V
VPOS
25°C ≤ TA ≤ 85°C, No load
–30°C ≤ TA ≤ 85°C, No load
–0.5%
–0.8%
0.5%
0.8%
Positive output 1 voltage
variation
rDS(on)1A Switch on-resistance
rDS(on)1B Rectifier on-resistance
200
350
1.7
1
mΩ
mΩ
MHz
A
I(SWP1) = 200 mA
fSW1
Switching frequency
Switch current limit
IPOS = 200mA
ISW1
Inductor valley current
VPOS falling
0.8
1.4
VSCP1
Short-circuit threshold in
operation
3.95
4.10
3
4.28
V
tSCP1
Short-circuit detection time in
operation
ms
V(OUTP1) – V(FBS) increasing
V(OUTP1) – V(FBS) decreasing
200
100
2
300
200
4
550
450
6
mV
mV
MΩ
Ω
VT
Output voltage sense threshold
FBS pin pull-down resistance
R(FBS)
RDCHG1 Discharge resistance
Line regulation
CTRL = GND, I(SWP1) = 1mA
IPOS = 200mA
10
30
70
0.01
0.007
%/V
%/A
Load regulation
1 mA ≤ IPOS ≤ 300 mA
INVERTING BUCK-BOOST CONVERTER (VNEG
)
Output voltage default
–4.0
V
Output voltage range
VNEG
–1.4
–50
–60
–5.4
50
25°C ≤ TA ≤ 85°C, no load
–30°C ≤ TA ≤ 85°C, no load
Output voltage accuracy
mV
60
rDS(on)2A SWN MOSFET on-resistance
200
300
mΩ
mΩ
I(SWN) = 200 mA
SWN MOSFET rectifier on-
rDS(on)2B
resistance
fSW2
ISW2
SWN Switching frequency
SWN switch current limit
INEG = 10 mA
1.7
2.2
MHz
A
VI = 2.9 V
1.5
300
180
3
700
230
Short circuit threshold in
operation
Voltage increase from nominal VNEG
500
200
10
mV
mV
ms
VSCP2
Short circuit threshold in start up
Short circuit detection time in
start up
tSCP2
Short circuit detection time in
operation
3
ms
RDCHG2 Discharge resistance
Line regulation
CTRL = GND, I(SWN) = 1 mA
INEG = 200 mA
130
150
0.004
0.1
170
Ω
%/V
%/A
Load regulation
BOOST CONVERTER 2 (AVDD
)
Copyright © 2015, Texas Instruments Incorporated
5
TPS65632
ZHCSDG2 –MARCH 2015
www.ti.com.cn
Electrical Characteristics (continued)
VI = 3.7 V, CTRL = 3.7 V, EN = 3.7 V, VPOS = 4.6 V, VNEG = –4.0 V, AVDD = 7.7 V, TJ = –40°C to 85°C, typical values are at TJ
= 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
7.7
MAX UNIT
SELP2 = Low
SELP2 = High
Output voltage
V
5.8
AVDD
25°C ≤ TA ≤ 85°C, no load
–30°C ≤ TA ≤ 85°C, no load
–1%
1%
Output voltage accuracy
–1.3%
1.3%
rDS(on)3A SWP2 switch on-resistance
rDS(on)3B SWP2 rectifier on-resistance
400
650
1.7
I(SWP2) = 200 mA
mΩ
fSW3
ILIM3
Switching frequency
Switch current limit
IAVDD = 0 mA
MHz
Inductor valley current
EN = GND, I(SWP2) = 1 mA
IAVDD = 30 mA
0.25
10
0.35
30
0.45
70
A
Ω
RDCHG3 Discharge resistance
Line regulation
0.02
0.18
%/V
%/mA
Load regulation
CTRL INTERFACE (CTRL, EN, SELP2)
VIH
Logic input high level voltage
Logic input low level voltage
Pull-down resistance
1.2
150
150
V
V
VIL
0.4
R
400
860
kΩ
OTHER
RCT
tINIT
tSTORE
tSDN
TSD
CT pin resistance
300
300
500
400
80
kΩ
µs
µs
µs
°C
Initialization time
Data storage/accept time period
Shutdown time period
30
30
80
Thermal shutdown temperature Temperature rising
145
7.6 Timing Requirements
MIN
NOM
MAX
UNIT
CTRL INTERFACE
tLOW
tHIGH
tOFF
Low-level pulse duration
2
2
10
10
25
25
µs
µs
µs
High-level pulse duration
Shutdown pulse duration (CTRL = low)
200
6
Copyright © 2015, Texas Instruments Incorporated
TPS65632
www.ti.com.cn
ZHCSDG2 –MARCH 2015
7.7 Typical Characteristics
TJ = 25°C, VI = 3.7 V, unless otherwise stated.
10
1
600
500
400
300
200
100
0
0.1
0.01
0.001
Low−Side
High−Side
−50
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
Temperature (°C)
Junction Temperature (°C)
G000
G000
Figure 1. Shutdown Current into AVIN and PVIN Pins
Figure 2. Boost Converter 1 (VPOS) rDS(ON)
600
1000
900
800
700
600
500
400
300
200
100
0
500
400
300
200
100
Low−Side
High−Side
Low−Side
High−Side
0
−50
−25
0
25
50
75
100 125
−50
−25
0
25
50
75
100 125
Junction Temperature (°C)
Junction Temperature (°C)
G000
G000
Figure 3. Inverting Buck-Boost Converter (VNEG) rDS(ON)
Figure 4. Boost Converter 2 (AVDD) rDS(ON)
Copyright © 2015, Texas Instruments Incorporated
7
TPS65632
ZHCSDG2 –MARCH 2015
www.ti.com.cn
8 Detailed Description
8.1 Overview
The TPS65632 consists of two boost converters and an inverting buck-boost converter. The VPOS output is fixed
at 4.6 V and VNEG is programmable via a digital interface in the range of –1.4 V to –5.4 V; the default is –4 V.
AVDD can be selected between 7.7 V and 5.8 V, using the SELP2 pin. The transition time of VNEG output is
adjustable by the CT pin capacitor.
8.2 Functional Block Diagram
VI
SWP2
15
AVIN
16
SWP1
1
OUTP2
13
OUTP1
AVDD
3
4
VPOS
Short-Circuit
Protection
Gate Driver
Gate Driver
PGND2
PGND1
Output Sense
Control
FBS
SELP2
EN
±
±
AVIN
SWP2
AVIN
SWP1
PWM
Control
PWM
Control
5
8
VREF
+
+
VREF
Oscillator
CTRL
CTRL
CT
Digital
Interface
6
+
DAC
9
6
±
CT
Control
±
Short-Circuit
Protection
Constant
Off-Time
Controller
+
50 mV
Gate Driver
PVIN
OUTN
VI
12
10
VNEG
7
11
2
14
AGND
SWN
PGND1
PGND2
8
Copyright © 2015, Texas Instruments Incorporated
TPS65632
www.ti.com.cn
ZHCSDG2 –MARCH 2015
8.3 Feature Description
8.3.1 Boost Converter 1 (VPOS
)
Boost converter 1 uses a fixed-frequency current-mode topology. Its output voltage (VPOS) is programmed at the
factory to 4.6 V and cannot be changed by the user.
For highest output voltage accuracy, connect the output sense pin (FBS) directly to the positive terminal of the
main output capacitor. If not used, the FBS pin can be left floating or connected to ground, in which case the
boost converter senses the output voltage via the OUTP1 pin.
8.3.1.1 V(POS) Boost Output Sense (FBS Pin)
V(POS) boost has a dedicated output sense pin (FBS). If FBS is floating or connected to ground, V(POS) boost
senses the output through OUTP1 pin.
8.3.2 Inverting Buck-Boost Converter (VNEG
)
The inverting buck-boost converter uses a constant-off-time current-mode topology. The converter's default
output voltage (VNEG) is –4.0 V, but it can be programmed from –1.4 V to –5.4 V (see Programming VNEG ).
8.3.2.1 Programming VNEG
The digital interface allows programming of VNEG in discrete steps. If the output voltage setting function is not
required then the CTRL pin can also be used as a standard enable pin. The digital output voltage programming
of VNEG is implemented using a simple digital interface with the timing shown in Figure 5.
ttINIT
tLOW
t
ttHIGH
ttSTORE
ttSDN
ttOFF
CTRL
VPOS
VNEG
t
4.6 V
ttSCP2
t
ttSET
±5.2 V
±4.0 V
Figure 5. Digital Interface Using CTRL
When CTRL is pulled high the device starts up with its default voltage of –4 V. The device includes a 6-bit DAC
that generates the output voltages shown in Table 1. The interface counts the rising edges applied to the CTRL
pin once the device is enabled. According toTable 1, VNEG is programmed to –5.2 V since 3 rising edges are
detected.
Copyright © 2015, Texas Instruments Incorporated
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TPS65632
ZHCSDG2 –MARCH 2015
www.ti.com.cn
Feature Description (continued)
Table 1.
Bit / Rising Edges
VNEG
DAC Value
Bit / Rising Edges
VNEG
DAC Value
010101
010110
010111
011000
011001
011010
011011
011100
011101
011110
011111
100000
100001
100010
100011
100100
100101
100110
100111
101000
101001
0 / no pulse
–4.0 V
–5.4 V
–5.3 V
–5.2 V
–5.1 V
–5.0 V
–4.9 V
–4.8 V
–4.7 V
–4.6 V
–4.5 V
–4.4 V
–4.3 V
–4.2 V
–4.1 V
–4.0 V
–3.9 V
–3.8 V
–3.7 V
–3.6 V
–3.5 V
000000
000001
000010
000011
000100
000101
000110
000111
001000
001001
001010
001011
001100
001101
001110
001111
010000
010001
010010
010011
010100
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
–3.4 V
–3.3 V
–3.2 V
–3.1 V
–3.0 V
–2.9 V
–2.8 V
–2.7 V
–2.6 V
–2.5 V
–2.4 V
–2.3 V
–2.2 V
–2.1 V
–2.0 V
–1.9 V
–1.8 V
–1.7 V
–1.6 V
–1.5 V
–1.4 V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
8.3.2.2 Controlling VNEG Transition Time
The transition time (tSET) is the time required to move VNEG from one voltage level to the next. Users can control
the transition time with a capacitor connected between the CT pin and ground. When the CT pin is left open or
connected to ground the transition time is as short as possible. When a capacitor is connected to the CT pin the
transition time is determined by the time constant (τ) of the external capacitor (C(CT)) and the internal resistance
of the CT pin (RCT). The output voltage reaches 70% of its programmed value after 1τ.
An example is given when using 100 nF for C(CT)
.
τ = 300 kΩ × 100 nF = 30 ms
(1)
The output voltage is at 70% of its final value after 1τ (i.e. 30 ms in this case) and at its final value after
approximately 3τ (90 ms in this case).
8.3.3 Boost Converter 2 (AVDD
)
Boost converter 2 uses a fixed-frequency current-mode topology. The TPS65632 device supports fixed output
voltages of 5.8 V and 7.7 V, selected by the SELP2 pin. AVDD = 7.7 V when SELP2 is low or left floating, and
AVDD = 5.8 V when SELP2 is high.
8.3.4 Soft Start and Start-Up Sequence
The devices feature a soft-start function to limit inrush current. Boost converter 2 (AVDD) is enabled when EN
goes high. When CTRL goes high, boost converter 1 starts with a reduced switch current limit and 10 ms later
the inverting buck-boost converter (VNEG) starts with its default value of –4 V. The typical start-up sequence is
shown in Figure 6. The two boost converters operate independently and boost converter 1 (VPOS) does not
require boost converter 2 (AVDD) to be in regulation in order for it to start..
10
Copyright © 2015, Texas Instruments Incorporated
TPS65632
www.ti.com.cn
ZHCSDG2 –MARCH 2015
EN
CTRL
AVDD
VPOS
10 ms (typ.)
VNEG
Figure 6. Start-Up Sequence
8.3.5 Enable (CTRL)
The CTRL pin serves two functions: one is to enable and disable the device, and the other is to program the
output voltage (VNEG) of the inverting buck-boost converter (see Programming VNEG). If the VNEG programming
function is not required the CTRL pin can be used as a standard enable pin for the device, which will start up
with its default value of –4.0 V on VNEG. The device is enabled when CTRL is pulled high and disabled when
CTRL is pulled low.
Note that to ensure proper start up CTRL must be pulled low for a minimum of 200 µs before being pulled high
again.
8.3.6 Undervoltage Lockout
The device features an undervoltage lockout function that disables it when the input supply voltage is too low for
proper operation.
8.3.7 Short-Circuit Protection
8.3.7.1 Short Circuits During Operation
The device is protected against short circuits of VPOS and VNEG to ground and short circuit of these two outputs to
each other. During normal operation an error condition is detected if VPOS falls below 4.1 V for longer than 3 ms
or VNEG is pulled above the programmed nominal output by 500 mV for longer than 3 ms. In either case the
device goes into shutdown and the outputs are disconnected from the input. This state is latched, and to resume
normal operation, VI has to cycle below the undervoltage lockout threshold, or CTRL has to toggle LOW and then
HIGH.
8.3.7.2 Short Circuits During Start Up
During start up an error condition is detected in the following cases:
•
•
•
VPOS is not in regulation 10 ms after CTRL goes HIGH
VNEG is higher than threshold level 10 ms after CTRL goes HIGH
VNEG is not in regulation 20 ms after CTRL goes HIGH
whitespace
If any of the above conditions is met the device goes into shutdown and the outputs are disconnected from the
input. This state is latched, and to resume normal operation VI has to cycle below the undervoltage threshold, or
CTRL has to toggle LOW and HIGH.
8.3.8 Output Discharge During Shut Down
The device discharges outputs during shutdown. Figure 7 shows the discharge control.
Copyright © 2015, Texas Instruments Incorporated
11
TPS65632
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www.ti.com.cn
VIN
EN
tVUVLO
tVUVLO
CTRL
Discharge
Discharge
Discharge
Discharge
Discharge
Discharge
Discharge
AVDD
VPOS
Discharge
Discharge
VNEG
t10 ms (typ.)
t10 ms (typ.)
Figure 7. Outputs Discharge During Shut Down
8.3.9 Thermal Shutdown
The TPS65632 device enters thermal shutdown if its junction temperature exceeds 145°C (typical). During
thermal shutdown none of the device's functions are available. To resume normal operation VI has to cycle below
the undervoltage threshold, or CTRL has to toggle LOW and then HIGH.
8.4 Device Functional Modes
8.4.1 Operation with VI < 2.9 V
The recommended minimum input supply voltage for full-performance is 2.9 V. The device continues to operate
with input supply voltages below 2.9 V, however, full performance is not guaranteed. The TPS65632 device does
not operate with input supply voltages below the UVLO threshold.
8.4.2 Operation with VI ≈ VPOS (Diode Mode)
The TPS65632 device features a "diode" mode that enables it to regulate its VPOS output even when the input
supply voltage is close to VPOS (that is, too high for normal boost operation). When operating in diode mode the
VPOS boost converter's high-side switch is disabled and its body diode used as the rectifier. Note that a minimum
load of ≈2 mA is required to proper output regulation in diode mode.
8.4.3 Operation with CTRL
When a low-level signal is applied to the CTRL pin the device is disabled and switching is inhibited. When the
input supply voltage is above the UVLO threshold and a high-level signal is applied to the CTRL pin the device is
enabled and its start-up sequence begins.
12
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TPS65632
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS65632 device is intended to supply the main analog supplies required by AMOLED displays. VPOS is
fixed at 4.6 V, but VNEG can be programmed using the CTRL pin to voltages in the range –1.4 V to –5.4 V. The
SELP2 pin can be used to set AVDD to either 5.8 V or 7.7 V. The device is highly integrated and requires few
external components.
9.2 Typical Application
Figure 8 shows a typical application circuit suitable for supplying AMOLED displays in smartphone applications.
The circuit is designed to operate from a single-cell Li-Ion battery and generates a positive output voltage VPOS of
4.6 V, a negative output voltage VNEG of –4.0 V, and a positive output voltage AVDD of 5.8 V or 7.7 V. The VPOS
and VNEG outputs are each capable of supplying up to 300 mA of current, and the AVDD output of up to 30 mA.
L1
4.7 µF
VI
PVIN
AVIN
SWP1
2.9 V to 4.5 V
VPOS
4.6 V / 300 mA
C1
3 × 10 µF
OUTP1
FBS
C5
100 nF
C2
10 µF
TPS65632
L2
10 µH
VNEG
±4.0 V / 300 mA
SWP2
OUTN
C3
2×10 µF
Enable AVDD
Enable / Program VNEG
AVDD Select
EN
CTRL
SELP2
AVDD
5.8 V, 7.7 V / 30 mA
OUTP2
L3
4.7 µH
C6
10 µF
AGND
PGND1
PGND2
SWN
CT
C4
100 nF
Figure 8. Typical Application Circuit
Copyright © 2015, Texas Instruments Incorporated
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TPS65632
ZHCSDG2 –MARCH 2015
www.ti.com.cn
Typical Application (continued)
9.2.1 Design Requirements
For this design example, use the parameters shown in Table 2
Table 2. Design Parameters
PARAMETER
VALUE
Input voltage range
2.9 V to 4.5 V
VPOS = 4.6 V
VNEG = –4.0 V
AVDD = 7.7 V
Output voltage
Current
I(VPOS) = 300 mA
I(VNEG) = 300 mA
I(AVDD) = 30 mA
f(SWP1) = 1.7 MHz
f(SWN) = 1.7 MHz
f(SWP2) = 1.7 MHz
Switching Frequency
9.2.2 Detailed Design Procedure
In order to maximize performance, the TPS65632 device has been optimized for use with a relatively narrow
range of component values, and customers are strongly recommended to use the application circuits shown in
Figure 8 with the components listed in Table 3 and Table 4.
9.2.2.1 Inductor Selection
The VPOS and VNEG converters have been optimized for use with 4.7-µH inductors and the AVDD boost converter
has been optimized for use with 10-µH inductors. For optimum performance it is recommended that these values
be used in all applications. Customers using different inductors than the ones in Table 3 are strongly
recommended to characterize circuit performance fully before finalizing their design. Customers should pay
particular attention to the inductors' saturation current and ensure it is adequate for their application's worst-case
conditions (which may also be during start-up).
Table 3. Inductor Selection
REFERENCE
DESIGNATOR
VALUE
MANUFACTURER
PART NUMBER
L1, L3
L2
4.7 µH
10 µH
Coilcraft
XFL4020-4R7ML
Coilmaster
MMPP252012-100N
9.2.2.2 Capacitor Selection
The recommended capacitor values are shown in Table 4. Applications using less than the recommended
capacitance (e.g. to save PCB area) may exhibit increased voltage ripple. In general, the lower the output
current, the lower the necessary capacitance. Customers should be aware that ceramic capacitors of the kind
typically used with the TPS65632 device exhibit dc bias effects, which means their effective capacitance under
normal operating conditions may be significantly lower than their nominal capacitance value. Customers must
ensure that the effective capacitance is sufficient for their application's performance requirements.
Table 4. Capacitor Selection
REFERENCE
DESIGNATOR
VALUE
MANUFACTURER
PART NUMBER
C1
3 × 10 µF
10 µF
Murata
Murata
Murata
Murata
GRM21BR71A106KE51
GRM21BR71A106KE51
GRM21BR71A106KE51
GRM155B11A104KA01
C2, C6
C3
2 × 10 µF
100 nF
C4, C5
14
Copyright © 2015, Texas Instruments Incorporated
TPS65632
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ZHCSDG2 –MARCH 2015
9.2.3 Application Curves
Unless otherwise stated: TA = 25°C, VI = 3.7 V, VPOS = 4.6 V, VNEG = –4.0 V, AVDD = 7.7 V; L1 = L3 = XFL4020-
4R7ML, and L2 = MMPP252012-100N.
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
VI = 2.9 V
VI = 3.7 V
VI = 4.3 V
VI = 2.9 V
VI = 3.7 V
VI = 4.3 V
0
50m
100m
150m
200m
250m
300m
0
5m
10m
15m
20m
25m
30m
Output Current (A)
Output Current (A)
G000
G000
Figure 9. VPOS and VNEG Combined Efficiency
Figure 10. AVDD Efficiency
4.62
4.61
4.60
4.59
4.58
4.57
4.56
4.55
−3.98
−3.99
−4.00
−4.01
−4.02
−4.03
−4.04
−4.05
−4.06
IO = 10 mA
IO = 100 mA
IO = 300 mA
INEG = 10 mA
INEG = 100 mA
INEG = 300 mA
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
Input Voltage (V)
Input Voltage (V)
G000
G000
Figure 11. VPOS Line Regulation
Figure 12. VNEG Line Regulation
7.76
7.75
7.74
7.73
7.72
7.71
7.70
4.62
4.61
4.60
4.59
4.58
4.57
4.56
4.55
IO = 10 mA
IO = 40 mA
IO = 80 mA
VI = 2.9 V
VI = 3.7 V
VI = 4.3 V
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
0
50m
100m
150m
200m
250m
300m
Input Voltage (V)
Output Current (A)
G000
G000
Figure 13. AVDD Line Regulation
Figure 14. VPOS Load Regulation
Copyright © 2015, Texas Instruments Incorporated
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TPS65632
ZHCSDG2 –MARCH 2015
www.ti.com.cn
−3.98
−3.99
−4.00
−4.01
−4.02
−4.03
−4.04
−4.05
−4.06
7.76
7.75
7.74
7.73
7.72
7.71
7.70
VI = 2.9 V
VI = 3.7 V
VI = 4.3 V
VI = 2.9 V
VI = 3.7 V
VI = 4.3 V
0
50m
100m
150m
200m
250m
300m
0
5m
10m
15m
20m
25m
30m
Output Current (A)
Output Current (A)
G000
G000
Figure 15. VNEG Load Regulation
Figure 16. AVDD Load Regulation
5 V/div
5 V/div
5 V/div
2 V/div
2 V/div
5 V/div
200 mA /div
200 mA /div
2 ms/div
2 ms/div
Figure 18. Start-Up: AVDD
Figure 17. Start-Up: VPOS and VNEG
10 mV/div
10 mV/div
5 V/div
5 V/div
200 mA /div
200 mA /div
500 ns/div
500 ns/div
IPOS = 100 mA
IPOS = 300 mA
Figure 19. Switch Pin, Inductor Current and Output
Voltage Waveforms: VPOS
Figure 20. Switch Pin, Inductor Current and Output
Voltage Waveforms: VPOS
16
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TPS65632
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ZHCSDG2 –MARCH 2015
10 mV/div
10 mV/div
5 V/div
5 V/div
500 mA /div
500 mA /div
500 ns/div
500 ns/div
INEG = 100 mA
INEG = 300 mA
Figure 21. Switch Pin, Inductor Current and Output
Voltage Waveforms: VNEG
Figure 22. Switch Pin, Inductor Current and Output
Voltage Waveforms: VNEG
10 mV/div
10 mV/div
5 V/div
5 V/div
200 mA /div
200 mA /div
500 ns/div
500 ns/div
IAVDD = 10 mA
IAVDD = 30 mA
Figure 23. Switch Pin, Inductor Current and Output
Voltage Waveforms: AVDD
Figure 24. Switch Pin, Inductor Current and Output
Voltage Waveforms: AVDD
VI = 3.0 V to 4.2 V in 50 µs
IPOS = 100 mA
VI = 3.0 V to 4.2 V in 50 µs
INEG = 100 mA
Figure 25. VPOS Line Transient Response
Figure 26. VNEG Line Transient Response
Copyright © 2015, Texas Instruments Incorporated
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TPS65632
ZHCSDG2 –MARCH 2015
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VI = 3.0 V to 4.2 V in 50 µs
IAVDD = 30 mA
IPOS = 10 mA to 100 mA in 100 ns
Figure 27. AVDD Line Transient Response
Figure 28. VPOS Load Transient Response
INEG = 10 mA to 100 mA in 100 ns
IAVDD = 10 mA to 30 mA in 100 ns
Figure 29. VNEG Load Transient Response
Figure 30. AVDD Load Transient Response
2.0
1.9
1.8
1.7
1.6
1.5
f
f
f
(SWP1)
(SWN)
(SWP2)
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
Input Voltage (V)
G000
IPOS = 100 mA
INEG = 100 mA
IAVDD = 30 mA
Figure 31. Switching Frequency
18
Copyright © 2015, Texas Instruments Incorporated
TPS65632
www.ti.com.cn
ZHCSDG2 –MARCH 2015
10 Power Supply Recommendations
The TPS65632 device is designed to operate with input supply voltages in the range 2.9 V to 4.5 V. If the input
supply voltage is located more than a few centimeters away from the device, additional bulk capacitance may be
required. The three 10-µF capacitors shown in Figure 8 are suitable for typical applications.
11 Layout
11.1 Layout Guidelines
•
Place the input capacitor on PVIN and the output capacitor on OUTN as close as possible to device. Use
short and wide traces to connect the input capacitor on PVIN and the output capacitor on OUTN.
•
Place the output capacitor on OUTP1 and OUTP2 as close as possible to device. Use short and wide traces
to connect the output capacitor on OUTP1 and OUTP2.
•
•
•
Connect the ground of CT capacitor with AGND, pin 7, directly.
Connect input ground and output ground on the same board layer, not through via hole.
Connect AGND, PGND1 and PGND2 with exposed thermal pad.
11.2 Layout Example
VIN
GND
C1c
C6
L2
C5
AVDD
C1b
C1a
L1
SWP1
1
2
3
4
12 PVIN
GND
VPOS
PGND1
OUTP1
FBS
11 SWN
L3
C2
10 OUTN
C3a
C3b
9
CTRL
Via to GND plane on layer 2
Via to other layer
C4
Figure 32. Recommended PCB Layout
版权 © 2015, Texas Instruments Incorporated
19
TPS65632
ZHCSDG2 –MARCH 2015
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12 器件和文档支持
12.1 器件支持
12.1.1 第三方产品免责声明
TI 发布的与第三方产品或服务有关的信息,不能构成与此类产品或服务或保修的适用性有关的认可,不能构成此类
产品或服务单独或与任何 TI 产品或服务一起的表示或认可。
12.2 商标
12.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
12.4 术语表
SLYZ022 — TI 术语表。
这份术语表列出并解释术语、首字母缩略词和定义。
13 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。 这些信息是针对指定器件可提供的最新数据。 这些数据会在无通知且不
对本文档进行修订的情况下发生改变。 欲获得该数据表的浏览器版本,请查阅左侧的导航栏。
20
版权 © 2015, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
11-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS65632RTER
TPS65632RTET
ACTIVE
ACTIVE
WQFN
WQFN
RTE
RTE
16
16
3000 RoHS & Green
250 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
PC6I
PC6I
Samples
Samples
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
11-Aug-2022
Addendum-Page 2
GENERIC PACKAGE VIEW
RTE 16
3 x 3, 0.5 mm pitch
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4225944/A
www.ti.com
PACKAGE OUTLINE
RTE0016C
WQFN - 0.8 mm max height
S
C
A
L
E
3
.
6
0
0
PLASTIC QUAD FLATPACK - NO LEAD
3.1
2.9
B
A
PIN 1 INDEX AREA
3.1
2.9
SIDE WALL
METAL THICKNESS
DIM A
OPTION 1
0.1
OPTION 2
0.2
C
0.8 MAX
SEATING PLANE
0.08
0.05
0.00
1.68 0.07
(DIM A) TYP
5
8
EXPOSED
THERMAL PAD
12X 0.5
4
9
4X
SYMM
17
1.5
1
12
0.30
16X
0.18
PIN 1 ID
(OPTIONAL)
13
16
0.1
C A B
SYMM
0.05
0.5
0.3
16X
4219117/B 04/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RTE0016C
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
1.68)
SYMM
13
16
16X (0.6)
1
12
16X (0.24)
SYMM
(2.8)
17
(0.58)
TYP
12X (0.5)
9
4
(
0.2) TYP
VIA
5
8
(R0.05)
ALL PAD CORNERS
(0.58) TYP
(2.8)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:20X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED
METAL
EXPOSED
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
SOLDER MASK
DEFINED
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4219117/B 04/2022
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RTE0016C
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
1.55)
16
13
16X (0.6)
1
12
16X (0.24)
17
SYMM
(2.8)
12X (0.5)
9
4
METAL
ALL AROUND
5
8
SYMM
(2.8)
(R0.05) TYP
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 17:
85% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:25X
4219117/B 04/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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相关型号:
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TPS65400-Q1 4.5- to 18-V Input Flexible Power Management Unit With PMBus/I2C Interface
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