TPS65640 [TI]
用于笔记本 PC 和平板 PC 的具有数字 VCOM 缓冲器的 LCD 偏置;型号: | TPS65640 |
厂家: | TEXAS INSTRUMENTS |
描述: | 用于笔记本 PC 和平板 PC 的具有数字 VCOM 缓冲器的 LCD 偏置 PC CD |
文件: | 总62页 (文件大小:3586K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TI INFORMATION – SELECTIVE DISCLOSURE
TPS65640
www.ti.com
SLVSCE2 –NOVEMBER 2013
LCD Bias With Digital VCOM Buffer for Notebook PCs and Tablet PCs
Check for Samples: TPS65640
1
FEATURES
DESCRIPTION
The TPS65640 is a compact LCD bias solution
primarily intended for use in notebook and tablet PCs.
The device comprises two boost converters to supply
the LCD panel’s source driver and gate driver or level
shifter; one buck converters or a LDO regulator
alternatively to supply the time controller logic
voltages; a linear negative voltage regulator to supply
gate off voltage or provide negative voltage for
source driver; a programmable VCOM generator with
one high-speed amplifier; a gate voltage shaping
function and two high speed operational amplifiers.
•
•
•
2.5-V to 5.5-V Input Voltage Range
3.6 to 12.7 V Boost Converter (AVDD
)
15 to 37 V Boost Converter with Temperature
Compensation (VGH
–8 V to –3.8 V Linear Negative Voltage
Regulator (VGL or NAVDD
)
•
•
•
•
•
)
1.5-V to 3-V Alternative Buck Converter or Low
Dropout Regulator (V25)
7 bits Programmable VCOM Calibrator With One
Integrated Buffer Amplifiers
All the regulators and VCOM voltage outputs are
programmed through I2C interface and stored in the
TPS65640 integrated E2PROM. The TPS65640 is
available in 5.5-mm × 3.5-mm, 28-lead QFN package.
0.8 V to 5.1 V Programmable VCOM Voltage
Output for Full AVDD Application
–4.1 V to 0.2 V Programmable VCOM Voltage
Output for Positive and Negative AVDD
Application
VIN
Boost Converter1
AVDD
•
•
•
Two Operational Amplifiers
Gate Voltage Shaping
Negative Charge
Pump Regulator
VGL
Buck Converter
LDO Regulator
Programmable VGH and VCOM Temperature
Compensation
V25
•
TCON Reset Signal Generator With
Programmable Delay
V25
Reset Generator
RST
VGH
•
•
•
•
I2C Interface for E2PROM Programming
AVDD
Boost Converter2
Operational Amplifier1
Operational Amplifier2
Thermal Shutdown
VOUTA
VOUTB
VCOM
VGHM
Supports GIP and Non-GIP Displays
28 Pins, 5.5-mm × 3.5-mm 0.5-mm Pitch QFN
7
Programmable
VCOM + Buffers
APPLICATIONS
•
•
Notebook PCs
Tablet PCs
VGH
Gate Voltage Shaping
I2C Interface
2
I C
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
TI INFORMATION – SELECTIVE DISCLOSURE
TPS65640
SLVSCE2 –NOVEMBER 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION(1)
TA
ORDERING
PACKAGE
PACKAGE MARKING
–40°C to 85°C
TPS65640
5.5-mm x 3.5-mm 28-pin QFN
PZXI
(1) The device is supplied taped and reeled, with 3000 devices per reel.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
MIN
MAX
7
VIN, V25, V25_LX, RESET, COMP, SCL, SDA, VFLK, VT
VIN (100ms) Pulse
–0.3
–0.3
–0.3
–5
V
V
12
AVDD, LX
Pin Voltage(2)
20
V
VCOM_OUT, INA+, INA–, OUTA, INB+, INB–, OUTB
5
V
VGH_LX, VGH, VGHM, RE
DRVN, VGL, NAVDD
Human Body Model
–0.3
–12
40
V
0.3
2000
200
700
85
V
V
ESD Rating(3)
Machine Model
V
Charged Device Model
Ambient temperature
Junction temperature
Storage temperature
V
TA
–40
–40
–65
°C
°C
°C
TJ
150
150
TSTG
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) ESD testing is performed according to the respective JESD22 JEDEC standard.
THERMAL INFORMATION
TPS65640
THERMAL METRIC(1)
RHR
28 PINS
37.4
26.3
8.3
UNITS
θJA
Junction-to-ambient thermal resistance(2)
Junction-to-case (top) thermal resistance(3)
Junction-to-board thermal resistance(4)
Junction-to-top characterization parameter(5)
Junction-to-board characterization parameter(6)
Junction-to-case (bottom) thermal resistance(7)
θJCtop
θJB
°C/W
ψJT
0.2
ψJB
8.1
θJCbot
1.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Spacer
2
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TPS65640
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SLVSCE2 –NOVEMBER 2013
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
TYP
MAX
UNIT
VIN
Input voltage range
2.5
5.5
V
BOOST CONVERTER 1
AVDD
IAVDD
L1
Boost converter 1 output voltage range
3.6
11
400
10
V
Boost converter 1 output current when 5.5 V ≥ VIN ≥ 2.5 V
Boost converter #1 inductor range
mA
µH
µF
4.7
10
COUT1
Boost converter #1 output capacitance
BOOST CONVERTER 2
AVDD
VGH
IGH
Input voltage range
3.6
15
11(1)
37
V
V
Output voltage range
Output current
15
10
2.2
10
40
mA
µH
µF
kΩ
L4
Inductor
4.7
1
10
COUT4
RNTC
Output capacitance
Thermistor resistance at 25 °C
BUCK CONVERTER (V25
)
V25
I25
Output voltage
1.5
3
V
Output current
Inductor
600
10
mA
µH
µF
L2
2.2
4.7
4.7
10
COUT2
Output capacitance
22
LDO Regulator (V25
)
V25
Output voltage
1.5
1
3
V
I25
Output current
350
mA
µF
COUT2
Output capacitance
4.7
(1) VGH – AVDD must be greater than 6 volts.
ELECTRICAL CHARACTERISTICS
VIN = 3.3 V; V25 = 2.5 V, AVDD = 8.5 V, VGH = 23 V, VGL = –6 V, RCAMP=200kΩ, CCAMP=1 nF, NAVDD = AGND = PGND = 0V,
TA = –40 °C to 85 °C. Typical values are at 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
IIN
Supply current into VIN
Supply current into AVDD
Supply current into VGH
Converters not switching
2
5
3
8.5
1
mA
mA
mA
No load on op-amp outputs
No load on VGHM
0.1
UNDER VOLTAGE LOCKOUT
VIN rising
2.3
2.35
2.2
2.4
Undervoltage lockout threshold
VUVLO
VIN falling TA = 25°C
VIN rising – VIN falling
2.05
2.25
V
V
Hysteresis
BOOST CONVERTER 1 (AVDD
0.15
)
Output voltage range
Tolerance
3.6
11
AVDD
VUVP1
–2%
2%
% of
AVDD
Undervoltage threshold
AVDD falling
75
80
85
TDLY_UVP1
VSCP1
160
30
15
10
0.2
1
ms
%
V
Short circuit threshold
Over Voltage threshold
Switch leakage current
Switch ON resistance
AVDD falling
25
35
16
VOVP1
AVDD rising
14.5
ILK1
AVDD = 13.5 V
20
µA
Ω
rDS(ON)1
ILX = 1 A
0.3
1.2
2.4
AVDD ILIM = 0, TA = 25 °C
AVDD ILIM = 1, TA = 25 °C
0.8
1.6
ILIM1
AVDD switch current limit
A
2
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SLVSCE2 –NOVEMBER 2013
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ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.3 V; V25 = 2.5 V, AVDD = 8.5 V, VGH = 23 V, VGL = –6 V, RCAMP=200kΩ, CCAMP=1 nF, NAVDD = AGND = PGND = 0V,
TA = –40 °C to 85 °C. Typical values are at 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
80%
480
600
720
800
TYP
MAX
UNIT
DMAX1
Maximum Duty Cycle
FREQ1 = 01
FREQ1 = 00, TA = 25°C
FREQ1 = 01, TA = 25°C
FREQ1 = 10, TA = 25°C
FREQ1 = 11, TA = 25°C
600
750
720
900
fSW1
Oscillator frequency
kHz
900
1080
1200
1000
Line regulation,
VLIR=ΔAVDD/(AVDD×ΔVIN
VLIR1
VIN = 2.5 V to 5.5 V, AVDD = 8.5 V, TA = 25 °C
±0.1
±0.15
%/V
%/A
)
Load regulation,
VLOR=(AVDD_20mA–AVDD_200mA)/AVDD_
VLOR1
VIN = 3.3 V, AVDD = 8.5 V, IAVDD = 20 mA to 200 mA
1
20mA
SS1 = 00
20
40
SS1 = 01
VSS1
AVDD soft stat duration
ms
SS1 = 10
60
SS1 = 11
80
LX1TS = 00
LX1TS = 01
LX1TS = 10
LX1TS = 11
0.5
0.7
0.9
1.1
Tf1
AVDD switch ON voltage slew rate
V/ns
BUCK CONVERTER (V25Buck
)
Output voltage
V25Buck
1.5
–2%
0.8
3
V
V
Tolerance
(V25-V25_setting)/V25_seeting
V25 falling
2%
1.2
Undervoltage threshold
Hysteresis
1
0.1
160
1.2
4
VUVP2
V25 rising
TDLY_UVP2
ILIM2
ms
A
Switch current limit
Soft start duration
ISW2A ramps from 0 A to 2 A
1
1.4
TSS2
ms
rDS(ON)2A
rDS(ON)2B
fSW2
High-side, ISW2A = ILIM2
250
100
1250
450
200
Switch ON resistance
mΩ
Low-side, ISW2B = 1 A
Switching frequency
VIN = 3.3 V; V25 = 2.5 V, I25 = 200 mA
1000
1500
kHz
%/V
Line regulation, VLIR = ΔV25
/
VLIR2
VIN = 2.5 V to 5.5 V
±0.1
1%
±0.15
(AV25×ΔVIN
)
VLOR2
Load regulation
VIN = 3.3 V, I25 = 1 mA to 400 mA
LINEAR REGULATOR (V25LDO
)
Output voltage
1.5
–2.5%
0.8
3.0
2.5%
1.2
V25LDO
V
V
Tolerance
Undervoltage threshold
Hysteresis
V25 falling
V25 rising
1
VUVP3
0.1
160
300
TDLY_UVP3
VDO3
ms
Dropout voltage
I25 = 350 mA, V25 = –3%
500
mV
Line regulation, VLIR = ΔV25
/
VLIR3
VIN = 2.8 V to 5.5 V, I25 = 100 mA
VIN = 3.3 V, I25 = 1 mA to 300 mA
0.1
1
±0.15
%/V
%/A
(V25×ΔVIN
)
VLOR3
Load regulation
BOOST CONVERTER 2 (VGH
)
Output voltage range
Tolerance
15
–3%
38
37
3%
40
VGH
V
VOVP4
VUVP4
Overvoltage threshold
Undervoltage threshold
TA = 25 °C
VGH falling
39
80
V
75
85
% of VGH
Undervoltage protection shutdown
delay
TDLY_UVP4
ILK4
160
10
ms
µA
Switch leakage current
Switching off VVGH_LX = 38 V
20
4
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TPS65640
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SLVSCE2 –NOVEMBER 2013
ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.3 V; V25 = 2.5 V, AVDD = 8.5 V, VGH = 23 V, VGL = –6 V, RCAMP=200kΩ, CCAMP=1 nF, NAVDD = AGND = PGND = 0V,
TA = –40 °C to 85 °C. Typical values are at 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
300
600
TYP
400
800
0.5
1.2
4
MAX
500
1000
1
UNIT
FREQ4 = 0
FREQ4 = 1
IVGH_LX = 1 A
fSW4
VGH swithching frequency
kHz
rDS(ON)4
ILIM4
VGH switch ON resistance
VGH switch current limit
Ω
0.9
1.5
A
SS4 = 00
SS4 = 01
SS4 = 10
SS4 = 11
8
TSS4
VGH soft start duration
ms
12
16
DMAX4
IVT
88%
90%
40
Thermistor reference current
Line regulation
VVT = 1 V
µA
VLIR4
VLOR4
AVDD = 3.6 V to 11 V
IGH = 5 mA to 40 mA
±0.1
1
±0.15
%/V
%/A
Load regulation
PROGRAMMABLE VCOM CALIBRATOR
VS+ – VS–
VCOM
VCOM buffer supply voltage
15
6
V
VCOM voltage accuracy,
VCOM–VCOM_setting
IOUT = 0 mA
–6
LSB
AVDD = 8.5 V, NAVDD = 0 V, VCOM_OUT = AVDD / 2,
ISOURCE = 1mA to 20mA
1
1
2
2
2
2
AVDD = 5 V, NAVDD = –5 V, VCOM_OUT = 0 V,
ISOURCE = 1 mA to 20 mA
Load regulation
V/A
mA
AVDD = 8.5 V, NAVDD = 0 V, VCOM_OUT = AVDD / 2,
ISINK = –1 mA to –20 mA
1
AVDD = 5 V, NAVDD = –5 V, VCOM_OUT = 0 V,
ISINK = –1 mA to –20 mA
1
AVDD = 5 V, VCOM_OUT = AVDD,
NAVDD = –5 V
–200
200
ISC2
Short circuit current
AVDD = 5 V,
VCOM_OUT = NAVDD = –5 V
SR2
Slew rate
VCOM_OUT = AVDD / 2 + 1 V
12
12
V/µs
MHz
BW2
Small signal 3dB bandwidth
VCOM_OUT = AVDD / 2, VSIGNAL = 60 mVPP, no load
OPERATIONAL AMPLIFIER 1 and 2 (AVDD = 5 V, NAVDD = –5 V, RL = 10 kΩ, CL = 10 pF, TA = 25°C)
VIO1
Input offset voltage
VCM = (AVDD + NAVDD) / 2
TA = –40°C to 85°C
–15
15
3
mV
μV/°C
GΩ
pF
ΔVIO/ΔT
RIN1
Average offset voltage drift
Input impedance
5
1
CIN1
Input capacitance
1.35
VCM1
AVOL1
PSRR1
CMRR1
VOL1
Input common mode voltage range
Open loop gain
AVDD = 5 V, NAVDD = –5 V
VCM = (AVDD + NAVDD) / 2
VCM = (AVDD + NAVDD) / 2
VCM = (AVDD + NAVDD) / 2
IL = 5 mA
–4
75
60
50
V
95
70
dB
dB
dB
V
Power supply rejection ratio
Common mode rejection ration
Output swing low
80
4.85
–485
±35
4.92
VOH1
Output swing High
IL = –5 mA
–4.92
±120
V
IOC1
Continuous output current
mA
VIN+ = (AVDD + NAVDD) / 2, VIN– = (AVDD + NAVDD) / 2 ±1 V,
open-loop
IPK1
Peak output current
mA
tS
Setting to ±0.1%
Slew rate
AV = –1, VIN– = (AVDD + NAVDD) / 2 ±1 V
500
12
5
ns
V/µs
SR1
BW1
PM
AV = –1, VIN– = (AVDD + NAVDD) / 2 ±1 V
Small signal 3 dB bandwidth
Phase margin
AV = –1, VCM = (AVDD + NAVDD) / 2, VSIGNAL = 60 mVPP
MHz
50
Degree
AV = –1, VCM = (AVDD + NAVDD) / 2, VSIGNAL = 60 mVPP, f =
5 MHz
CS
Channel Separation
75
dB
GATE OFF REGULATION CONTROLLER (VGL
)
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ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.3 V; V25 = 2.5 V, AVDD = 8.5 V, VGH = 23 V, VGL = –6 V, RCAMP=200kΩ, CCAMP=1 nF, NAVDD = AGND = PGND = 0V,
TA = –40 °C to 85 °C. Typical values are at 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
–3.8
–3%
1
TYP
MAX
-8
UNIT
Output voltage
Tolerance
VGL
VGL voltage regulate accuracy
V
3%
6
IDRVN
VLIR5
DRVN source current
Line regulation
4
1
mA
mV
IDRVN = 1 mA, VIN = 2.5 V to 5.5 V
6
GATE VOLTAGE SHAPING
rDS(ON)H
rDS(ON)L
VIH
VGH to VGHM ON resistance
VGH = 24 V, IGHM = 10 mA, VFLK = 2.5 V
VGHM = 24 V, IGHM = 10 mA, VFLK = 0 V
VFLK rising
13
13
25
25
Ω
Ω
V
V
VGHM to RE ON resistance
High-level input voltage
Low-level input voltage
1.5
VIL
VFLK falling
0.6
VGHM rising, 2.5 V, 50% thresholds, COUT = 150 pF, RE = 0
mΩ
tPLH
tPHL
100
100
200
Propagation delay
ns
VGHM falling, 2.5 V, 50% thresholds, COUT = 150 pF, RE = 0
mΩ
200
DLY = 00
DLY = 01
DLY = 10
DLY = 11
0
20
40
60
Gate voltage shaping / LCD bias
ready delay range
tDLY
ms
TCON RESET GENERATOR
VDIV = 000
VDIV = 001
VDIV = 010
VDIV = 011
VDIV = 100
VDIV = 101
VDIV = 110
VDIV = 111
1.08
1.26
1.44
1.62
1.8
1.2
1.4
1.6
1.8
2
1.32
1.54
1.76
1.98
2.2
VDIV
Detecting voltage falling threshold
V
1.98
2.16
2.34
2.2
2.4
2.6
150
2.42
2.64
2.86
Hysteresis
mV
V
VOL(RST)
ILK(RST)
Output voltage
Leakage current
IRST = 1 mA (sinking)
VRST = 2.5 V
RESET = 0000
…
0.5
1
µA
0
(1)
tRESET
Reset delay time
…
30
ms
°C
RESET = 1111
THERMAL SHUTDOWN
TSD
Thermal shutdown temperature
TJ rising
150
I2C INTERFACE
Configuration parameters slave
address
E8
9E
ADDR
Programmable VCOM slave address
Low level input voltage
High level input voltage
Hysteresis
VIL
Supply = 2.5 V, VIN falling, standard and fast modes
Supply = 2.5 V, VIN rising, standard and fast4 modes
Supply = 2.5 V, applicable to fast mode only
Sinking 3 mA
0.3 × V25
V
V
VIH
VHYS
VOL
CI
0.7 × V25
125
mV
mV
pF
Low level output voltage
Input capacitance
500
10
Standard mode
Fast mode
100
400
fSCL
Clock frequency
Clock low period
Clock high period
kHz
µs
Standard mode
Fast mode
4.7
1.3
4
tLOW
Standard mode
Fast mode
tHIGH
µs
0.6
(1) Refer to Table 12 for RESET time delay break down.
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ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.3 V; V25 = 2.5 V, AVDD = 8.5 V, VGH = 23 V, VGL = –6 V, RCAMP=200kΩ, CCAMP=1 nF, NAVDD = AGND = PGND = 0V,
TA = –40 °C to 85 °C. Typical values are at 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
4.7
1.3
4
TYP
MAX
UNIT
Standard mode
Fast mode
Bus free time between a STOP and a
START condition
tBUF
µs
Standard mode
Fast mode
Hold time for a repeated START
condition
thd:STA
µs
0.6
4
Standard mode
Fast mode
Set-up time for a repeated START
condition
tsu:STA
tsu:DAT
µs
ns
0.6
250
100
0.05
0.05
Data set-up time
Standard mode
Fast mode
Standard mode
Fast mode
3.45
0.9
thd:DAT
Data hold time
µs
ns
20 +
0.1CB
Standard mode
Fast mode
1000
1000
1000
300
Rise time of SCL after a repeated
START condition and after an ACK
bit
tRCL1
20 +
0.1CB
20 +
0.1CB
Standard mode
Fast mode
tRCL
tFCL
tRDA
tFDA
Rise time of SCL
Fall time of SCL
Rise time of SDA
Fall time of SDA
ns
ns
ns
20 +
0.1CB
20 +
0.1CB
Standard mode
Fast mode
300
20 +
0.1CB
300
20 +
0.1CB
Standard mode
Fast mode
1000
300
20 +
0.1CB
20 +
0.1CB
Standard mode
Fast mode
300
ns
µs
20 +
0.1CB
300
Standard mode
Fast mode
4
tsu:STO
Set-up time for STOP condition
Capacitive load on SDA and SCL
0.6
Standard mode
Fast mode
400
400
CB
pF
E2PROM
NWRITE
tWRITE
Number of write cycles
Write time
1000
100
ms
hrs
Data retention
Storage temperature = 150°C
100000
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DEVICE INFORMATION
PIN ASSIGNMENT
28 PIN 5.5mm × 3.5mm RHR PACKAGE
TOP VIEW
PGND1
VGH_LX
VGH
VINA–
OUTA
OUTB
VINB–
PGND3
VGHM
PIN FUNCTIONS
PIN
TYPE
DESCRIPTION
NAME
AGND
AVDD
COMP
NO.
22
P
I
Ground
AVDD sense pin
23
21
O
Boost converter 1 compensation. Connect a suitable compensation network (typically a series R-C
combination) between this pin and ground
DRVN
FLK
6
2
O
I
Drive output for negative linear regulator
Gate voltage shaping flicker clock input
Boost convert 1 switch node
LX
24
8
P
I
NAVDD
OUTA
OUTB
PGND1
PGND2
PGND3
RE
Negative AVDD voltage input
13
12
25
16
29
1
O
O
P
P
P
O
O
I
Operational amplifier A output
Operational amplifier B output
Power Ground 1 for boost converter 2
Power Ground 2 for buck converter
Power Ground 3 for boost converter 1
Gate voltage shaping discharge resistor connection
T-CON reset output
RESET
SCL
5
4
I2C Interface serial clock
SDA
3
I/O
O
P
P
O
I
I2C Interface serial data
VCOM_OUT
VGH
9
VCOM amplifier output
27
26
28
7
Gate voltage shaping input and boost converter 2 output sense
Boost converter 2 switch node
Gate voltage shaping output
VGH_LX
VGHM
VGL
Negative linear regulator sense pin
Supply voltage
VIN
18
P
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PIN FUNCTIONS (continued)
PIN
TYPE
DESCRIPTION
NAME
VINA+
VINA–
VINB+
VINB–
VT
NO.
15
14
10
11
20
19
17
I
I
Operational amplifier B non-inverting input
Operational amplifier A inverting input
I
Operational amplifier B non-inverting input
I
Operational amplifier B inverting input
I
Boost converter 2 and VCOM reference external thermistor network connection
Buck converter or LDO regulator output sense
Buck converter switch node or LDO regulator output
V25
O
P
V25_LX
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TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
PARAMETER
BOOSTER CONVERTER 1
Efficiency vs. Load Current
Output Voltage Ripple
Load Transient Response
Startup
CONDITIONS
FIGURE
VIN = 3.3 V, AVDD = 5.5 V and 8.5V, L = 10 µH, fSW = 1 MHz
VIN = 3.3 V, AVDD = 5.5 V, IAVDD = 200 mA, fSW = 1 MHz
VIN = 3.3 V, AVDD = 5.5 V, IAVDD = 20 mA to 200 mA
VIN = 3.3 V, AVDD = 5.5 V, fSW = 1 MHz, ILOAD = 55 Ω
VIN = 3.3 V, AVDD = 5.5 V, fSW = 1 MHz
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Over Voltage Protection
Under Voltage Protection
BUCK CONVERTER
Efficiency vs. Load Current
Output Voltage Ripple
Load Transient Response
Startup
VIN = 3.3 V, AVDD = 5.5 V, fSW = 1 MHz
VIN = 3.3 V, V25 = 1.8 V and 2.5 V
VIN = 3.3 V, V25 = 2.5 V, IV25 = 600 mA
VIN = 3.3 V, V25 = 2.5 V, IV25 = 20 to 200 mA
VIN = 3.3 V, V25 = 2.5 V, ILOAD = 12.5 Ω
VIN = 3.3 V, V25 = 2.5 V
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Undervoltage Protection
LDO VOLTAGE REGULATOR
Load Transient Response
Startup
VIN = 3.3 V, V25 = 2.5 V, IV25 = 20 to 200 mA
VIN = 3.3 V, V25 = 2.5 V, ILOAD = 12.5 Ω
VIN = 3.3 V, V25 = 2.5 V
Figure 12
Figure 13
Figure 14
Undervoltage Protection
BOOST CONVERTER 2
Efficiency vs. Load Current
Efficiency vs. Load Current
Output Voltage Ripple
Load Transient Response
Startup
VIN = 3.3 V, AVDD = 5.5 V, VGH = 16 V, L = 10 µH, fSW = 800 kHz
VIN = 3.3 V, AVDD = 8.5 V, VGH = 25 V, L = 10 µH, fSW = 800 kHz
VIN = 3.3 V, AVDD = 5.5 V, VGH = 16 V, L = 10 µH, IVGH = 50 mA, fSW = 800 kHz
VIN = 3.3 V, AVDD = 5.5 V, VGH = 16 V, L = 10 µH, IVGH = 10 to 50 mA
VIN = 3.3 V, AVDD = 5.5 V, VGH = 16 V, L = 10 µH, fSW = 800 kHz
VIN = 3.3 V, AVDD = 5.5 V, VGH = 16 V, L = 10 µH, fSW = 800 kHz
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Under Voltage Protection
NEGATIVE CHARGE PUMP REGULATOR CONTROL
Output Voltage Ripple
VIN = 3.3 V, AVDD = 5.5 V, VGL = –4.5 V, IGL = 50 mA
Figure 21
Figure 22
Figure 23
Figure 24
Load Transient Response
GATE VOLTAGE SHAPING
VIN = 3.3 V, AVDD = 5.5 V, VGL = –4.5 V, IGL = 10 to 50 mA
VIN = 3.3 V, AVDD = 5 V, AVDD = 5 V,
OPERATIONAL AMPLIFIER
SLEW RATE
VIN = 3.3 V, VGH = 16 V, NAVDD = –5 V, INA+ = –1 V to 1 V
POWER ON SEQUENCY
POWER OFF SEQUENCY
VIN = 3.3 V, AVDD = 5.5 V, VGH = 16 V, VGL = –4.5 V
VIN = 3.3 V, AVDD = 5.5 V, VGH = 16 V, VGL = –4.5 V
Figure 25
Figure 26
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EFFICIENCY
vs
LOAD CURRENT
OUTPUT VOLTAGE RIPPLE
100
90
80
70
60
50
40
30
20
10
0
AVDD Voltage 20mV/div
LX Voltage 2V/div
Inductor Current 300mA/div
AVDD = 5.5 V
AV = 8.5 V
DD
1
10
100
1k
C001
Load Current (mA)
Time (1 µs/div)
Figure 1. Boost Converter 1 Efficiency
LOAD TRANSIENT RESPONSE
AVDD Voltage 200mV/div
Figure 2. Boost Converter 1 Output Ripple
STARTUP
VIN Voltage 2V/div
AVDD Voltage 2V/div
LX Voltage 2V/div
Inductor Current 200mA/div
Load Current 50mA/div
Time (2 ms/div)
Time (10 ms/div)
Figure 3. Boost Converter 1 Load Transient Response
Figure 4. Boost Converter 1 Startup
OVERVOLTAGE PROTECTION
UNDERVOLTAGE PROTECTION
AVDD Voltage 5V/div
AVDD Voltage 2V/div
LX Voltage 5V/div
LX Voltage 2V/div
V25 Voltage 1V/div
V25 Voltage 2V/div
Time (5 ms/div)
Time (50 ms/div)
Figure 5. Boost Converter 1 Overvoltage Protection
Figure 6. Boost Converter 1 Undervoltage Protection
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EFFICIENCY
vs
LOAD CURRENT
OUTPUT VOLTAGE RIPPLE
100
90
80
70
60
50
40
30
20
10
V25 Voltage 10mV/div
V25_LX Voltage 2V/div
Inductor Current 300mA/div
V25 = 1.8 V
V25=2.5V
0
1
10
100
1k
C002
Load Current (mA)
Time (2 µs/div)
Figure 7. Buck Converter Efficiency
LOAD TRANSIENT RESPONSE
V25 Voltage 100mV/div
Figure 8. Buck Converter Output Ripple
STARTUP
VIN Voltage 2V/div
V25 Voltage 1V/div
V25_LX Voltage 2V/div
Inductor Current 200mA/div
Load Current 50mA/div
Time (2 ms/div)
Time (10 ms/div)
Figure 9. Buck Converter Load Transient Response
Figure 10. Buck Converter Startup
UNDERVOLTAGE PROTECTION
LOAD TRANSIENT RESPONSE
V25 Voltage 200mV/div
V25 Voltage 1V/div
V25_LX Voltage 2V/div
AVDD Voltage 5V/div
VGH Voltage 10V/div
Load Current 50mA/div
Time (2 ms/div)
Time (50 ms/div)
Figure 11. Buck Converter Undervoltage Protection
Figure 12. LDO Load Transient Response
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STARTUP
UNDERVOLTAGE PROTECTION
VIN Voltage 2V/div
V25 Voltage 1V/div
V25 Voltage 1V/div
AVDD Voltage 3V/div
VGH Voltage 10V/div
AVDD Voltage 2V/div
IIN Current 100mA/div
VGL Voltage 4V/div
Time (10 ms/div)
Time (50 ms/div)
Figure 13. LDO Startup
Figure 14. LDO Undervoltage Protection
EFFICIENCY
vs
LOAD CURRENT
EFFICIENCY
vs
LOAD CURRENT
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
AV = 5.5 V
DD
GH
AV = 8.5 V
DD
GH
V
= 16 V
V
= 25 V
0
10
20
30
40
50
0
10
20
30
40
50
C003
C004
Load Current (mA)
Load Current (mA)
Figure 15. Boost Converter 2 Efficiency
Figure 16. Boost Converter 2 Efficiency
LOAD TRANSIENT RESPONSE
VGH Voltage 200mV/div
OUTPUT VOLTAGE RIPPLE
VGH Voltage 10mV/div
VGH_LX Voltage 6V/div
Load Current 20mA/div
Time (2 ms/div)
Inductor Current 300mA/div
Time (1 µs/div)
Figure 17. Boost Converter 2 Output Ripple
Figure 18. Boost Converter 2 Load Transient Response
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STARTUP
UNDERVOLTAGE PROTECTION
AVDD Voltage 3V/div
VGH Voltage 2V/div
VGH Voltage 8V/div
VGH_LX Voltage 3V/div
VGH_LX Voltage 8V/div
AVDD Voltage 3V/div
Inductor Current 300mA/div
Time (10 ms/div)
Time (50 ms/div)
Figure 19. Boost Converter 2 Startup
OUTPUT VOTLAGE RIPPLE
VGL Voltage 20mV/div
Figure 20. Boost Converter 2 Undervoltage Protection
LOAD TRANSIENT RESPONSE
VGL Voltage 50mV/div
Load Current 20mA/div
LX Voltage 2V/div
Inductor Current 100mA/div
Time (1 µs/div)
Time (2 ms/div)
Figure 21. Negative Charge Pump Output Ripple
Figure 22. Negative Charge Pump Load Transient Response
GATE VOLTAGE SHAPING
SLEW RATE
INA+ Voltage 500mV/div
VGH Voltage 8V/div
VOUTA Voltage 500mV/div
VGHM Voltage 8V/div
FLK Voltage 2V/div
Time (10 µs/div)
Time (20 ns/div)
Figure 23. Gate Voltage Shaping
Figure 24. Operational Amplifier Slew Rate
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POWER ON SEQUENCY
POWER OFF SEQUENCY
VIN
V25
VIN
V25
RESET
AVDD
RESET
AVDD
VGH
VGH
VGL
VGL
VGPM
VGPM
VCOM
VCOM
Time (10 ms/div)
Time (10 ms/div)
Figure 25. Power Off Sequency
Figure 26. Power Off Sequency
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DETAILED DESCRIPTION
An internal block diagram of the TPS65640 is shown in Figure 27.
COMP
AVDD
LX
Current
Limit
DAC
Gm
VREF
Gate
Driver
VIN
PGND3
V25_LX
VREF
LDO Mode
V25
R
S
DAC
VREF
Gate
Driver
Latch
Off-Time
Control
RESET
PGND2
DAC
DAC
AGND
VT
VCOM_OUT
VGH_LX
1.25 V
40 µA
6
ADC
0.5 V
R
DAC
Gate
Driver
Latch
PGND1
VGHM
VGH
Off-Time
Control
S
Logic
Control
FLK
AVDD
RE
VINA+
VINA-
DRVN
VIN
OUTA
VCC
VREF
VINB+
VINB-
OUTB
VGL
DAC
SDA
SCL
DAC
Register
EEprom
NAVDD
Figure 27. Internal Block Diagram
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BOOST CONVERTER 1 (AVDD)
VIN
L1
D1
AVDD
COUT1
AVDD
VIN
LX
R1
Current
Limit
DAC
Gm
VREF
Gate
Q1
Driver
R2
COMP
PGND3
200 kΩ
1 nF
Figure 28. Boost Converter 1 Internal Block Diagram
Switching Frequency (Boost Converter 1)
Boost Converter 1 can be configured to operate at 600 kHz, 800 kHz, 1000 kHz, or 1200 kHz. In general, the
higher switching frequency offers better transient performance at the expense of slightly reduced efficiency. In
some applications, it may be necessary to select a particular switching frequency to minimize EMI problems. The
switching frequency is determined by the state of the FREQ1 configuration bit in the AVDDCONFIG register.
Compensation (Boost Converter 1)
Boost Converter 1 uses an external compensation network connected to its COMP pin to stabilize its feedback
loop. A simple series R-C network connected between this pin and ground is sufficient to achieve good
performance (that is, stable and with good transient response) in most applications. Good starting values, which
will work for many applications, are 200 kΩ and 1 nF.
In some applications (for example, those using electrolytic output capacitors), it may be necessary to include a
second compensation capacitor between the COMP pin and ground. This has the effect of adding an additional
pole in the feedback loop's frequency response, which can be used to cancel the zero introduced by the
electrolytic output capacitor's ESR.
Output Voltage (Boost Converter 1)
Boost converter 1's output voltage can be programmed from 3.6 V to 11 V with 100-mV increment using the
AVDD register. Because changing the output voltage in big steps can temporarily demand switch currents
greater than the switch's current limit, it is recommended that AVDD be changed in 100-mV steps, for example,
first change AVDD from 7 V to 7.1 V, then to 7.2 V, then to 7.3 V, and so on until the desired output voltage has
been achieved.
Start-Up (Boost Converter 1)
Boost converter 1 starts immediately after the V25 voltage raming to its programmed voltage.
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To minimize inrush current during start-up, boost converter 1 ramps its output voltage in tSS1 milliseconds. The
value of tSS1 can be programmed from 20ms to 80ms using the SS1 bits in AVDDCONFIG register.
Boost converter 1's internal power good signal is asserted when two conditions are met:
•
•
the converter's soft-start ramp has reached its final value
the converter's output voltage is greater than its UVP threshold.
The power good signal is latched and will only be reset when the supply voltage is cycled.
Current limit (Boost Converter 1)
The boost converter 1 has built-in cycle-by-cycle current limit for the power MOSFET. When the inducotr current
or the power MOSFET current reaches ILIM, the power MOSFET will be tuned off immediately until the next
switching cycle. The ILIM can be programmed from 1 A to 2 A using the AVDD ILIM bit in AVDDCONFIG register.
Design Procedure (Boost Converter 1)
The first step in the design procedure is to verify whether the maximum possible output current of the boost
converter 1 supports the specific application requirements.
1. Converter Duty Cycle:
V ´ h
D = 1-
IN
VAVDD
(1)
2. Inductor Ripple Current:
V ´D
DIL =
IN
fs ´L
(2)
3. Maximum Output Current:
DIL
æ
ö
÷
ø
IOUT _max = I
-
´ 1- D
( )
ç LIM_min
2
è
(3)
(4)
4. Peak Switching Current:
IOUT DIL
ISWPEAK
=
+
1- D
2
η = Estimated boost converter efficiency (use the number from the efficiency plots or 0.9 as an estimation)
fS = Switching frequency
L = Selected inductor value (typ. 10 µH)
ILIM_min: Minimum current limit
ISWPEAK = Peak switch current for the used output current
ΔIL = Inductor peak-to-peak ripple current
The peak switch current ISWPEAK is the current that the integrated switch, the inductor and the external Schottky
diode have to be able to handle. The calculation must be done for the minimum input voltage where the peak
switch current is the highest.
Inducotr Selection (Boost Converter 1)
Higher the inductor value the lower the inductor current ripple and the output
voltage ripple but the slower the transient response.
Inductor Value:
4.7 µH ≤ L ≤ 10 µH
The inductor saturation current must be higher than the switch peak current for
Saturation Current:
DC Resistance:
I
SAT ≥ ISWPEAK or ISAT ≥ ILIM_max the max. peak output current or as a more conservative approach higher than
the max. switch current limit.
The lower the inductors resistance the lower the losses and the higher the efficiency.
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Rectifier Diode Selection (Boost Converter 1)
Diode type: Schottky or super barrier rectifier (SBR) for better efficiency.
Forward voltage: The lower the forward voltage VF the higher the efficiency and the lower the diode temperature.
Reverse voltage: VR must be higher than the output voltage and should be higher than the OVP voltage typically
15 V.
Thermal characteristics: The diode must be able to handle the dissipated power of PD = VF x IOUT
.
Output Capacitor Selection (Boost Converter 1)
For best output voltage filtering, TI recommends low-ESR ceramic capacitors. Two 4.7 µF (or four 2.2-µF)
ceramic capacitors work for most applications. To improve the load transient response more capacitance can be
added between the rectifier diode.
To calculate the output voltage ripple the following equations can be used:
VAVDD - V
IOUT
x
AVDD ´ fs COUT
IN
DVC _RIPPLE
=
+ DVC _ESR
V
(5)
(6)
DVC _ESR = ISWPEAK ´RC _ESR
BUCK CONVERTER (V25)
The buck converter uses a current mode, quasi-constant off-time topology that offers high efficiency, fast
transient response, and constant ripple current amplitude under all operating conditions (see Figure 29). The
converter's off time is inversely proportional V25 and therefore constant when the converter is in regulation. Thus
for a given VIN the converter operates at a constant frequency that changes temporarily when the converter
reacts to load changes.
When the latch is set, transistor Q1 is turned on and transistor Q2 is turned off. As inductor L2 charges, the
current flowing through Q1 ramps up at a rate determined by the difference between VIN and VCORE and the value
of L2. The ramping current is sensed across Q1, and when it reaches the level demanded by error amplifier A1
the output of comparator A2 goes high, resetting the latch. The reset latch turns off Q1 and turns on Q2. Inductor
L2 now discharges through Q2 for a fixed off time. At the end of the off time, the latch is set, turning on Q1 and
turning off Q2, and the cycle repeats.
The sensed output voltage is divided down by a multiplying DAC and used as negative feedback to amplifier A1.
The output of A1 is the error signal required to regulate V25 at the desired voltage.
VIN
Q1
VREF
DAC
R
S
A2
A1
L2
Gate
Driver
V25
Latch
V25_LX
COUT2
Off-Time
Control
Q2
V25
PGND2
Figure 29. Buck Converter 1 Block Diagram
Output Voltage (Buck Converter)
Buck converter's output voltage can be programmed from 1.5 V to 3.0 V using the V25 register.
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Start-Up (Buck Converter)
Buck converter starts as soon as the supply voltage exceeds the under-voltage lockout threshold (the same time
as the linear regulator starts).
To minimize inrush current during start-up, buck converter ramps V25 from 0 V to programmed voltage in tSS2
milliseconds. The value of tSS2 is around 0.5 ms to 4.0 ms.
The same ramp rate is used for both buck converter and the linear regulator (LDO).
Current limit (Buck Converter)
The buck converter has built-in cycle-by-cycle current limit for the high side power MOSFET, Q1 in Figure 29.
When the inductor current or the MOSFET Q1 current reaches ILIM, the Q1 is tuned off immediately until the next
switching cycle. The ILIM is typically 1.2 A.
Design Procedure (Buck Converter)
The first step in the design procedure is to verify whether the maximum possible output current of the buck
converter supports the specific application requirements.
1. Switching Frequency:
V ´ h - V25
fs =
IN
V ´ h´ Toff
IN
(7)
(8)
2. Converter Duty Cycle
V25
D =
V ´ h
IN
3. Inductor Ripple Current:
V
IN - V25 ´D
)
(
DIL =
fs ´L
(9)
(10)
(11)
4. Maximum Output Current:
DIL
-
IOUT _max = ILIM_min
5. Peak Switching Current:
DIL
ISWPEAK = IOUT
+
Toff = Buck boost switch duty off time (typ. 200 ns)
η = Estimated boost converter efficiency (use the number from the efficiency plots or 0.8 as an estimation)
fS = Switching frequency
L = Selected inductor value (typ. 10 µH)
ILIM_min: Minimum current limit
ISWPEAK = Peak switch current for the used output current
ΔIL = Inductor peak-to-peak ripple current
The peak switch current ISWPEAK is the current that the integrated switch, the inductor and the external Schottky
diode have to be able to handle. The calculation must be done for the minimum input voltage where the peak
switch current is the highest.
Inducotr Selection (Buck Converter)
Higher the inductor value the lower the inductor current ripple and the output
voltage ripple but the slower the transient response.
Inductor Value:
4.7 µH ≤ L ≤ 10 µH
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The inductor saturation current must be higher than the switch peak current for
SAT ≥ ISWPEAK or ISAT ≥ ILIM_max the max. peak output current or as a more conservative approach higher than
the max. switch current limit.
Saturation Current:
DC Resistance:
I
The lower the inductors resistance the lower the losses and the higher the efficiency.
Output Capacitor Selection (Buck Converter)
For best output voltage filtering, TI recommends low-ESR ceramic capacitors. Two 4.7-µF (or four 2.2-µF)
ceramic capacitors work for most applications. To improve the load transient response more capacitance can be
added between the rectifier diode.
To calculate the output voltage ripple the following equations can be used:
V25
IOUT
DVC _RIPPLE
=
´
V ´ fs COUT
+ DVC _ESR
IN
(12)
(13)
DVC _ESR = ISWPEAK ´RC _ESR
LDO REGULATOR (V25)
A low-dropout (LDO) linear regulator generates V25 (see Figure 30). The linear regulator is supplied from VIN and
it’s an alternative option to buck converter. The V25 voltage could be supplied either by Buck converter or LDO
determined by the state of the BUCK/LDO configuration bit in the CONFIG register.
VIN
Body
diode
Q1
Q2
V25
V25_LX
COUT3
VREF
Q3
A1
DAC
V25
R1
AGND
AGND
Figure 30. Linear Regulator Block Diagram
Amplifier A1 regulates the current through Q3 by comparing a reduced version of the output voltage with a
bandgap voltage reference VREF. The output of Q3 is mirrored by Q1 and Q2 to generate the desired output
voltage. In practice, Q2 is made much bigger than Q1. This means that the current flowing through Q1 and Q3 is
smaller than the output current by the same ratio as the transistor areas.
The maximum output current is inherently limited by the maximum output voltage of A1, the value of resistor R1,
and the characteristics of transistor Q3.
Output Voltage (LDO Regulator)
LDO's output voltage can be programmed from 1.5 V to 3.0 V using the V25 register. Because the V25_LX pin
alternates for LDO regulator's output voltage and buck converter's switch node, select buck converter with LDO
circuit configuration can make the permanent damage. The LDO regulator mode is factory default setup.
Start-Up (Low Dropout Regulator)
LDO starts as soon as the supply voltage exceeds the under-voltage lockout threshold (the same time as the
buck converter starts).
To minimize inrush current during start-up, LDO regulator ramps V25 from 0V to programmed voltage in tSS2
milliseconds. The value of tSS2 is around 0.5 ms to 4.0 ms.
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The same ramp rate is used for both buck converter and the linear regulator.
BOOST CONVERTER 2 (VGH)
Boost converter 2 is a low-power boost converter that can be used to generate the LCD panel's gate ON voltage
VGH. Operating the converter in DCM removes the right-half-plane zero from its transfer function, simplifying its
stabilization and allowing the use of small chip inductors. To simplify its application and to minimize the external
parts required, boost converter 2 features internal compensation and soft-start circuitry.
A simplified block diagram of boost converter 2 is shown in Figure 31.
D4
L4
AVDD
VGH
COUT4
VGH_LX
R
DAC
A2
A1
Q1
Gate
Driver
Latch
Off-Time
Control
S
VGH
PGND1
Figure 31. Boost Converter 2 Block Diagram
Switching Frequency (Boost Converter 2)
Boost Converter 2 can be configured to operate at 400 kHz or 800 kHz. The switching frequency is determined
by the state of the FREQ4 configuration bit in the VGHCONFIG register.
Output Voltage Temperature Compensation (Boost Converter 2)
Boost converter 2 can be temperature compensated, allowing its output voltage to transition from a higher
voltage at low temperatures VGH(COLD) to a lower voltage at high temperatures VGH(HOT) (see Figure 32 and
Figure 33).
VGH
VGHCOLD
VGHHOT
Temperature
TCOLD
THOT
Figure 32. Boost Converter 2 Temperature Compensation Characteristic
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1.25 V
40 µA
6
VT
ADC
PWM
Controller
A1
R1
0.5 V
DAC
VGHHOT
5 Bits
VGH
R2
RT
VGHCOLD
5 Bits
Figure 33. Boost Converter 2 Temperature Compensation Block Diagram
(1)
Referring to Figure 33, The thermistor network formed by R1, R2, and RT
generates a voltage at the VT pin
(2)
whose value decreases with increasing temperature. With proper selection of the external components RT, R1
and R2, temperatures THOT and TCOLD can be configured to suit each display's characteristics. A spreadsheet
allowing easy calculation of component values is available from Texas Instruments free of charge.
Output Voltage (Boost Converter 2)
The output voltage of boost converter 2 at cold temperatures can be programmed from 15 V to 37 V using the
VGHCOLD register.
The output voltage of boost converter 2 at hot temperatures can be programmed from 15 V to 37 V using the
VGHHOT register.
In applications that do not require temperature compensation, the VGHT bit in CONFIG register should be set to
1 and the VGHHOT register used to set the voltage of VGH
.
Because changing the output voltage in big steps can temporarily demand switch currents greater than the
switch's current limit, it is recommended that VGH be changed in 1 V steps, i.e. first change VGH from 15 V to 16
V, then to 16 V, then to 17 V, and so on until the desired output voltage has been achieved.
Start-Up (Boost Converter 2)
Boost converter 2 is enabled when AVDD has finished ramping to its programmed voltage.
To minimize inrush current during start-up, boost converter 2 ramps VGH to its programmed value in tSS4
seconds. The value of tSS4 can be programmed from 4 ms to 16 ms using the SS4 bits in VGHCONFIG register.
The same ramp rate is used for both boost converter 2 and the negative charge pump regulator.
Boost converter 2's internal power good signal is asserted when two conditions are met:
•
•
the converter's soft-start ramp has reached its final value
the converter's output voltage is greater than its UVP threshold.
The power good signal is latched and will only be reset when the supply voltage is cycled.
Current limit (Boost Converter 2)
The boost converter 2 has built-in cycle-by-cycle current limit for the power MOSFET. When the inducotr current
or the power MOSFET current reaches ILIM, the power MOSFET will be tuned off immediately until the next
switching cycle. The ILIM is typically 1.2 A for boost converter 2.
Design Procedure (Boost Converter 2)
The first step in the design procedure is to verify whether the maximum possible output current of the boost
converter supports the specific application requirements.
1. Converter Duty Cycle:
(1) RT should be a negative temperature coefficient (NTC) type whose resistance at 25°C is 10kΩ.
(2) Texas Instruments can provide a spreadsheet that calculates suitable component values automatically.
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V
AVDD
´ h
D = 1-
V
GH
(14)
2. Inductor Ripple Current:
AVDD ´D
fs ´L
3. Maximum Output Current:
DIL
V
DIL =
(15)
æ
ö
IOUT _max = I
-
´ 1- D
( )
÷
ç LIM_min
2
è
ø
(16)
(17)
4. Peak Switching Current:
IOUT DIL
ISWPEAK
=
+
-
η = Estimated boost converter efficiency (use the number from the efficiency plots or 0.9 as an estimation)
fS = Switching frequency
L = Selected inductor value (typ. 10 µH)
ILIM_min: Minimum current limit
ISWPEAK = Peak switch current for the used output current
ΔIL = Inductor peak-to-peak ripple current
The peak switch current ISWPEAK is the current that the integrated switch, the inductor and the external Schottky
diode have to be able to handle. The calculation must be done for the minimum input voltage where the peak
switch current is the highest.
Inducotr Selection (Boost Converter 2)
Higher the inductor value the lower the inductor current ripple and the output
voltage ripple but the slower the transient response.
Inductor Value:
4.7 µH ≤ L ≤ 10 µH
The inductor saturation current must be higher than the switch peak current for
Saturation Current:
DC Resistance:
I
SAT ≥ ISWPEAK or ISAT ≥ ILIM_max the max. peak output current or as a more conservative approach higher than
the max. switch current limit.
The lower the inductors resistance the lower the losses and the higher the efficiency.
Rectifier Diode Selection (Boost Converter 2)
Diode type: Schottky or super barrier rectifier (SBR) for better efficiency.
Forward voltage: The lower the forward voltage VF the higher the efficiency and the lower the diode temperature.
Reverse voltage: VR must be higher than the output voltage and should be higher than the OVP voltage 39 V.
Thermal characteristics: The diode must be able to handle the dissipated power of PD = VF x IOUT
.
Output Capacitor Selection
For best output voltage filtering, TI recommends low-ESR ceramic capacitors. Two 4.7-µF (or four 2.2-µF)
ceramic capacitors work for most applications. To improve the load transient response more capacitance can be
added between the rectifier diode.
To calculate the output voltage ripple the following equations can be used:
V
GH - VAVDD IOUT
´
DVC _RIPPLE
=
+ DVC _ESR
VGH ´ fs
COUT
(18)
(19)
DVC _ESR = ISWPEAK ´RC _ESR
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NEGATIVE CHARGE PUMP VOLTAGE REGULATOR CONTROL (VGL)
The negative charge pump voltage regulator control an external NPN transistor to regulate the VGL output. As
typical application circuit Figure 34 illustrated, a one time negative voltage charge pump based on the AVDD
boost switching provides the source voltage to the emitter of NPN transistor. Depending on the feedback voltage
applied on the VGL pin, A1 error amplifier regulates the current through Q3. The proportional current mirrored by
Q1 to Q2 sends to the base of NPN transistor from DRVN pin. Therefore, the regulation is achieved by controlled
voltage drop between collector and emitter of NPN transition.
Normally the negative charge pump regulator is to provide gate OFF voltage to the gate driver or level shift. In
additional, for positive and negative AVDD application, it can also be used for negative AVDD regulating. Because
of charge bump voltage loss, it is recommended to leave enough voltage guard band (for example, 1 V for 50-
mA load) between positive AVDD to negative AVDD
.
R1
LX
VGL
COUT5
VIN
Q1
Q2
DRVN
VCC
VREF
Q3
A1
DAC
VGL
AGND
Figure 34. Negative Charge Pump Block Diagram
Output Voltage (Negative Charge Pump)
Negative charge pump's output voltage can be programmed from –8 V to –3.8 V using the VGL register.
Start-Up (Negative Charge Pump)
Negative charge pump is enabled together with booster converter 2 when AVDD has finished ramping to its
programmed voltage.
The same ramp rate is shared for both boost converter 2 and negative charge pump regulator. The negative
charge pump regulator ramps VGL to its programmed value from 0V in tSS4 seconds. The value of tSS4 can be
programmed from 4 ms to 16 ms using the SS4 bits in VGHCONFIG register.
NPN Transistor Selection (Negative Charge Pump)
The NPN transistor used to regulator VGL or Negtive AVDD should have a DC gain (hFE) of at least 100 when its
collector current is equal to the charge pump's output current. The transistor should also be able withstand
voltages up to VIN across its collector-emitter (VCE).
The power dissipated in the transistor is given by Equation 20. The transistor must be able to dissipate this
power without its junction becoming too hot. Note that the ability to dissipate power depends on adequate PCB
thermal design.
PQ = [V -(2´ VF )- | VGL |]´IGL
IN
(20)
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Where IGL is the mean (not RMS) output current drawn from the charge pump.
Diode Selection (Negative Charge Pump)
Small-signal diodes can be used for most low current applications (<50 mA) and higher rated diodes for higher
power applications. The average current through the diode is equal to the output current, so that the power
dissipated in the diode is given by Equation 21
PD = IGL ´ VF
(21)
The peak current through the diode occurs during start-up and for a few cycles may be as high as a few amps.
However, this condition typically lasts for <1 ms and can be tolerated by many diodes whose repetitive current
rating is much lower. The diodes’ reverse voltage rating should be equal to at least 2 × VIN.
Capacitor Selecion (Negative Charge Pump)
For the lowest output voltage ripple, low-ESR ceramic capacitors are recommended. The actual value is not
critical and 1 µF to 10 µF is suitable for most applications. Large capacitors provide better performance in
applications where large load transient currents are present.
A flying capacitor in the range of 100 nF to 1 µF is suitable for most applications. Larger values experience a
smaller voltage drop by the end of each switching cycle, and allow higher output voltages or currents, or both, to
be achieved. Smaller values tend to be physically smaller and cheaper.
OVER-VOLTAGE AND UNDER-VOLTAGE PROTECTION (AVDD, V25, VGH)
Each voltage regulator output is protected against under-voltages and over-voltages.
Over-voltage conditions are detected if AVDD output rises over typical 15 V or VGH output rises over typical 39 V,
in which cases the AVDD boost switch or VGH boost switch will be turned off until the overvoltage conditions is
removed.
Undervoltage conditions are detected if a regulator output falls below certain level of its programmed voltage for
longer than a time period, in which case the relevant voltage regulator is disabled. To recover normal operation
following an under-voltage condition, the cause of the error condition must be removed and the supply voltage
VIN cycled.
Table 1. Under Voltage Protection
ERROR
TIME
UVP
PROTECT BEHAVIOR
RECOVERY CONDITION
CONDITI
ON
PERIOD
V25 buck converter or LDO, AVDD boost converter, VGH
> 160 ms boost converter and VGL regulator are disabled. RESET
pin is pulled low.
Error condition is removed and VIN is
cycled (POR).
V25
< 1 V
AVDD boost converter, VGH boost convert and VGL
> 160 ms
Error condition is removed and VIN is
cycled (POR).
AVDD
VGH
< 80%
< 80%
voltage regulator are disabled.
Error condition is removed and VIN is
cycled (POR).
> 160 ms VGH boost converter is disabled.
RESET GENERATOR
The RESET pin generates an active-low reset signal for the T-CON (see Figure 35). During power-up the reset
timer (tRESET) starts when V25 has finished ramping. The reset pulse duration can be programmed from 0 ms to
30 ms using the RESET register.
The RESET output is an open-drain type that requires an external pull-up resistor. Pull-up resistor values in the
range 10 kΩ to 100 kΩ are recommended for most applications.
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RESET
V25
OSC
CLK
H
≥
D
VREF
DAC
Reset
Q
EN
RST
Timer
RST
Figure 35. Reset Internal Block Diagram
GATE VOLTAGE SHAPING
The gate voltage shaping function can be used to reduce image sticking in LCD panels by modulating the LCD
panel's gate ON voltage (VGH). Figure 36 shows a block diagram of the gate voltage shaping function and
Figure 37 shows the typical waveforms during operation.
VGH
VGH
Q1
VGHM
VGHM
Control
Logic
FLK
CVGHM
4.7 nF
Q2
RE
RE
Figure 36. Gate Voltage Shaping Block Diagram
VGHPG
FLK
Don’t Care
tDLY
VGHM
Figure 37. Gate Voltage Shaping Waveforms
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Gate voltage shaping is controlled by the FLK input. When FLK is high, Q1 is on, Q2 is off, and VGHM is equal to
VGH. On the falling edge of FLK, Q1 is turned off, Q2 is turned on, and the LCD panel load connected to the
VGHM pin discharges through the external resistor connected to the RE pin.
During power-up Q2 is held permanently on and Q1 permanently off, regardless of the state of the FLK signal,
until tDLY milliseconds after boost converter 2 (VGH) has finished ramping. The value of tDLY can be programmed
from 0ms to 60ms using the DLY register.
During power-down Q2 is held permanently on and Q1 permanently off, regardless of the state of the FLK signal.
PROGRAMMABLE VCOM CALIBRATOR (VCOM
)
The programmable VCOM calibrator uses a DAC to generate an offset Voltage for LCD panel common voltage
reference.
AVDD
1.25 V
6
ADC
VT
VCOM
Temp
R1
40 µA
0.5 V
VCOM_OUT
R2
RT
VCOMHOT
10-Bits RAM
VCOMHOT
10-Bits
DAC
VCOMCOLD
10-Bits
VCOMCOLD
10-Bits RAM
VCOM
7-Bits RAM
NAVDD
Figure 38. Programmable VCOM Calibrator Block Diagram
The VCOM voltage calibration needs two steps for adjustment.
First step is to set the central value of VCOM voltage according to the AVDD, VGH and LCD panel characteristic.
The VCOM voltage is programmable from 1.5 V to 5.0 V or –4 V to 0.8 V by VCOMHOT register. The first step is
normally done by PCB assembly manufacturer.
Second step is to calibrate the VCOM voltage on the LCD panel assembly line by VCOM RAM register through I2C
digital interface. The VCOM register value indicates the voltage increment or decrement of VCOM_OUT which is
preset by VCOMHOT. Once the proper value is identified, the VCOM_OUT voltage value can be renewed with
VCOM register value added. The default value for VCOM register is 1000000. If 1000001 is written into VCOM
register, the VCOM_OUT voltage will increase with one DAC step, 10mV. In the other hand if 0111111 is written
to VCOM register, the VCOM_OUT voltage will decrease with one DAC step, 10 mV.
The VCOM voltage also supports temperature compensation and allows its output voltage to transition from a
lower voltage at low temperatures VCOMCOLD to a higher voltage at high temperatures VCOMHOT (see Figure 39).
The temperature compensation for VCOM could be turn on/off by bit VCOMT in register CONFIG. If temperature
compensation for VCOM is ON state, both VCOMHOT and VCOMCOLD need to be input. Otherwise only
VCOMHOT is active for VCOM voltage setting without temperature compensation.
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VCOM
VCOMHOT
VCOMCOLD
Temperature
TCOLD
THOT
Figure 39. VCOM Temperature Compensation Characteristic
OPERATIONAL AMPLIFIERS
Like most operational amplifiers, the VCOM amplifiers are not designed to drive purely capacitive loads, so it is not
recommended to connect a capacitor directly to their outputs in an attempt to increase performance; however,
the amplifiers are capable of delivering high peak currents that make such capacitors unnecessary.
To optimize performance, the VCOM amplifiers' positive supplies are connected internally to the AVDD pin and
negative supplies are connected internally to NAVDD pin (See Figure 40 for operational amplifier internal block
diagram).
AVDD
VINA+
OUTA
VINA-
VINB+
OUTB
VINB-
NAVDD
Figure 40. Operational Amplifier Block Diagram
The two integrated operational amplifiers are able to be disabled for non-used application to minimize the power
consumption. Setting the OPA_A bit or OPA_B bit in CONFIG register can turn on/off operational amplifier A or
B individually.
To minimize the addtional power dissipated when operational amplifier is turned off, it is recommanded to short
the both inverter input and non-inverter input to same voltage bias or leave them floating.
CONFIGURATION PARAMETERS
The TPS65640 divides the configuration parameters into two categories:
•
•
VCOM calibration
All other configuration parameters
In typical applications, all configuration parameters except VCOM are programmed by the subcontractor during
PCB assembly, and VCOM is programmed by the display manufacturer during display calibration.
RAM and E2PROM
Configuration parameters can be changed by writing the desired values to the appropriate RAM register or
registers. The RAM registers are volatile and their contents are lost when power is removed from the device. By
writing to the Control Register, it is possible to store the active configuration in non-volatile E2PROM so that it will
subsequently be used as the default setting upon when the device is powered up.
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Configuration Parameters (Excluding VCOM Calibration)
Table 2 shows the memory map of the configuration parameters.
Table 2. Configuration Memory Map
Register
Address
Register
Name
Factory
Default
Description
00h
01h
02h
03h
CONFIG
AVDD
FAh
3Ah
0Ah
09h
Sets function control bits
Sets the output voltage of AVDD boost converter
Sets miscellaneous configuration bits for AVDD boost converter
AVDDCONFIG
VGHHOT
Sets the output voltage of VGH boost converter at high temperatures (VGHT = 0) or
VGH boost converter (VGHT=1)
04h
05h
06h
07h
08h
09h
0Ah
0Bh
VGHCOLD
VGHCONFIG
VGL
09h
02h
1Fh
0Ah
01h
06h
01h
5Fh
Sets the output voltage of VGH boost converter at low temperatures (VGHT=0)
Sets miscellaneous configuration bits for VGH boost converter
Sets the output voltage of VGL linear regulator
Sets the output voltage of buck converter.
V25
VDIV
Sets the threshold of the /RST signals
RESET
DLY
Sets the reset pulse duration
Sets the gate voltage shaping delay
VCOMHOT
Presets the output voltage of VCOM reference at high temperatures (VCOMT = 0) or
VCOM reference (VCOMT=1)
0Ch
FFh
VCOMCOLD
Control
5Fh
00h
Presets the output voltage of VCOM reference at low temperatures (VCOMT=0)
Controls whether read and write operations access RAM or E2PROM registers
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CONFIG (00h)
The CONFIG register can be written to and read from.
Table 3. CONFIG Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
VGHT
Bit 0
VCOMR
VCOMT
OPA_B
OPA_A
BUCK/LDO
VGL
VGH
VGH
Bit
0
This bit enables/disables the boost converter for VGH voltage regulator.
0
1
Enables the VGH boot converter
Disables the VGH boost converter
VGHT
Bit
1
This bit enables/disables the temperature compensation for VGH regulator.
0
1
Enables the temperature compensation for VGH voltage regulator
Disables the temperature compensation for VGH voltage regulator
VGL
Bit
2
This bit enables/disables the VGL linear voltage regulator.
0
1
Enables the VGL linear voltage regulator
Disables the VGL linear voltage regulator
BUCK/LDO
OPA_A
OPA_B
VCOMT
VCOMR
Bit
3
This bit selects the operation mode for V25 voltage regulator.
0
1
Selects the Buck converter for V25 voltage regulator
Selects the LDO for V25 voltage regulator
Bit
4
This bit enables/disables the OPA_A operational amplifier.
0
1
Enables the OPA_A operational amplifier
Disables the OPA_A operational amplifier
Bit
5
This bit enables/disables the OPA_B operational amplifier.
0
1
Enables the OPA_B operational amplifier
Disables the OPA_B operational amplifier
Bit
6
This bit enables/disables the temperature compensation for VCOM voltage
0
1
Enables the temperature compensation for VCOM voltage
Disables the temperature compensation for VCOM voltage
Bit
7
This bit sets the VCOM voltage output range
0
1
VCOM = 0.8 V ~ 5 V for full AVDD Application
VCOM = –4.1 V ~ 0.2 V for PN AVDD Application
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AVDD (01h)
The AVDD register can be written to and read from.
Table 4. AVDD Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
AVDD
AVDD
Bits
6-0
These bits select boost converter 1's output voltage (AVDD)
0000000
……
N.A.
1000010
1000011
1000100
1000101
1000110
1000111
1001000
1001001
1001010
1001011
1001100
1001101
1001110
1001111
1010000
1010001
1010010
1010011
1010100
1010101
1010110
1010111
1011000
1011001
1011010
1011011
1011100
1011101
1011110
1011111
1100000
1100001
AVDD = 6.6 V
1100010
AVDD = 9.8 V
N.A.
AVDD = 6.7 V
AVDD = 6.8 V
AVDD = 6.9 V
AVDD = 7.0 V
AVDD = 7.1 V
AVDD = 7.2 V
AVDD = 7.3 V
AVDD = 7.4 V
AVDD = 7.5 V
AVDD = 7.6 V
AVDD = 7.7 V
AVDD = 7.8 V
AVDD = 7.9 V
AVDD = 8.0 V
AVDD = 8.1 V
AVDD = 8.2 V
AVDD = 8.3 V
AVDD = 8.4 V
AVDD = 8.5 V
AVDD = 8.6 V
AVDD = 8.7 V
AVDD = 8.8 V
AVDD = 8.9 V
AVDD = 9.0 V
AVDD = 9.1 V
AVDD = 9.2 V
AVDD = 9.3 V
AVDD = 9.4 V
AVDD = 9.5 V
AVDD = 9.6 V
AVDD = 9.7 V
1100011
1100100
1100101
1100110
1100111
1101000
1101001
1101010
1101011
1101100
1101101
1101110
1101111
1110000
1110001
1110010
1110011
1110100
1110101
1110110
1110111
1111000
1111001
1111010
1111011
1111100
1111101
1111110
1111111
AVDD = 9.9 V
AVDD = 10.0 V
AVDD = 10.1 V
AVDD = 10.2 V
AVDD = 10.3 V
AVDD = 10.4 V
AVDD = 10.5 V
AVDD = 10.6 V
AVDD = 10.7 V
AVDD = 10.8 V
AVDD = 10.9 V
AVDD = 11.0 V
AVDD = 11.1 V
AVDD = 11.2 V
AVDD = 11.3 V
AVDD = 11.4 V
AVDD = 11.5 V
AVDD = 11.6 V
AVDD = 11.7 V
AVDD = 11.8 V
AVDD = 11.9 V
AVDD = 12.0 V
AVDD = 12.1 V
AVDD = 12.2 V
AVDD = 12.3 V
AVDD = 12.4 V
AVDD = 12.5 V
AVDD = 12.6 V
AVDD = 12.7 V
0100100
0100101
0100110
0100111
0101000
0101001
0101010
0101011
0101100
0101101
0101110
0101111
0110000
0110001
0110010
0110011
0110100
0110101
0110110
0110111
0111000
0111001
0111010
0111011
0111100
0111101
0111110
0111111
1000000
1000001
AVDD = 3.6 V
AVDD = 3.7 V
AVDD = 3.8 V
AVDD = 3.9 V
AVDD = 4.0 V
AVDD = 4.1 V
AVDD = 4.2 V
AVDD = 4.3 V
AVDD = 4.4 V
AVDD = 4.5 V
AVDD = 4.6 V
AVDD = 4.7 V
AVDD = 4.8 V
AVDD = 4.9 V
AVDD = 5.0 V
AVDD = 5.1 V
AVDD = 5.2 V
AVDD = 5.3 V
AVDD = 5.4 V
AVDD = 5.5 V
AVDD = 5.6 V
AVDD = 5.7 V
AVDD = 5.8 V
AVDD = 5.9 V
AVDD = 6.0 V
AVDD = 6.1 V
AVDD = 6.2 V
AVDD = 6.3 V
AVDD = 6.4 V
AVDD = 6.5 V
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AVDDCONFIG (02h)
The AVDDCONFIG register can be written to and read from.
Table 5. AVDDCONFIG Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
AVDD ILIM
SSI
FREQ1
LX1TS
LX1TS
Bit
These bits configure the falling speed of AVDD boost switch.
1-0
00
01
10
11
Tf = 0.5 V/ns
Tf = 0.7 V/ns
Tf = 0.9 V/ns
Tf = 1.1 V/ns
FREQ1
Bit
These bits configure the switching frequency of AVDD boost.
3-2
00
01
10
11
fLX = 600 kHz
fLX = 800 kHz
fLX = 1000 kHz
fLX = 1200 kHz
SSI
Bit
These bits configure the soft start duration for AVDD boost regulator
5-4
00
01
10
11
tSS1 = 20 ms
tSS1 = 40 ms
tSS1 = 60 ms
tSS1 = 80 ms
AVDD ILIM
Reserved
Bit
6
This bit select the AVDD boost current limite value
0
1
ILIM = 1 A
ILIM = 2 A
Bits
7
This bit is reserved for future use. During write operations data intended for these bits is ignored, and during
read operations 0 is returned.
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VGHHOT (03h)
The VGHHOT register can be written to and read from.
Table 6. VGHHOT Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
VGHHOT
VGHHOT
Bits
4-0
These bits select VGH output voltage at hot temperatures (VGHT=0) or all temperature range (VGHT=1).
00000
00001
00010
00011
00100
00101
00110
00111
01000
01001
01010
01011
01100
01101
01110
01111
N.A.
10000
10001
10010
10011
10100
10101
10110
10111
11000
11001
11010
11011
11100
11101
11110
11111
VGHHOT = 22 V
VGHHOT = 23 V
VGHHOT = 24 V
VGHHOT = 25 V
VGHHOT = 26 V
VGHHOT = 27 V
VGHHOT = 28 V
VGHHOT = 29 V
VGHHOT = 30 V
VGHHOT = 31 V
VGHHOT = 32 V
VGHHOT = 33 V
VGHHOT = 34 V
VGHHOT = 35 V
VGHHOT = 36 V
VGHHOT = 37 V
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
VGHHOT = 15 V
VGHHOT = 16 V
VGHHOT = 17 V
VGHHOT = 18 V
VGHHOT = 19 V
VGHHOT = 20 V
VGHHOT = 21 V
Reserved
Bits
7-5
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
VGHCOLD (04h)
The VGHCOLD register can be written to and read from.
Table 7. VGHCOLD Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
VGHCOLD
VGHCOLD
Bits
4-0
These bits select VGH output voltage at cold temperatures (VGHT=0)
00000
00001
00010
00011
00100
00101
00110
00111
01000
01001
01010
01011
01100
01101
01110
01111
N.A.
10000
10001
10010
10011
10100
10101
10110
10111
11000
11001
11010
11011
11100
11101
11110
11111
VGHCOLD = 22 V
VGHCOLD = 23 V
VGHCOLD = 24 V
VGHCOLD = 25 V
VGHCOLD = 26 V
VGHCOLD = 27 V
VGHCOLD = 28 V
VGHCOLD = 29 V
VGHCOLD = 30 V
VGHCOLD = 31 V
VGHCOLD= 32 V
VGHCOLD = 33 V
VGHCOLD = 34 V
VGHCOLD = 35 V
VGHCOLD= 36 V
VGHCOLD = 37 V
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
VGHCOLD = 15 V
VGHCOLD = 16 V
VGHCOLD = 17 V
VGHCOLD = 18 V
VGHCOLD = 19 V
VGHCOLD = 20 V
VGHCOLD = 21 V
Reserved
Bits
7-5
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
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VGHCONFIG (05h)
The VGHMISC register can be written to and read from.
Table 8. VGHCONFIG Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
FREQ4
SS4
LX4TS
LX4TS
Bit
These bits configure the falling speed of VGH boost switch.
1-0
00
01
10
11
Tf = 2.2 V/ns
Tf = 3.5 V/ns
Tf = 4.8 V/ns
Tf = 6 V/ns
SS4
Bit
These bits configure the soft start duration for VGH boost regulator
3-2
00
01
10
11
tSS4 = 4 ms
tSS4 = 8 ms
tSS4 = 12 ms
tSS4 = 16 ms
FREQ4
Bit
4
This bit configures the switching frequency of VGH boost regulator
0
1
FVGH_LX = 400 kHz
FVGH_LX = 800 kHz
Reserved
Bits
7-5
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
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VGL (06h)
The VGL register can be written to and read from.
Table 9. VGL Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
VGL
VGL
Bits
5-0
These bits select VGL output voltage
000000
000001
000010
000011
000100
000101
000110
000111
001000
001001
001010
001011
001100
001101
001110
001111
010000
010001
010010
010011
010100
010101
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
N.A.
VGL = –3.8 V
010110
010111
011000
011001
011010
011011
011100
011101
011110
011111
100000
100001
100010
100011
100100
100101
100110
100111
101000
101001
101010
101011
VGL = –3.9 V
VGL = –4.0 V
VGL = –4.1 V
VGL = –4.2 V
VGL = –4.3 V
VGL = –4.4 V
VGL = –4.5 V
VGL = –4.6 V
VGL = –4.7 V
VGL = –4.8 V
VGL = –4.9 V
VGL = –5.0 V
VGL = –5.1 V
VGL = –5.2 V
VGL = –5.3 V
VGL = –5.4 V
VGL = –5.5 V
VGL = –5.6 V
VGL = –5.7 V
VGL = –5.8 V
VGL = –5.9 V
VGL = –6.0 V
101100
101101
101110
101111
110000
110001
110010
110011
110100
110101
110110
110111
111000
111001
111010
111011
111100
111101
111110
111111
VGL = –6.1 V
VGL = –6.2 V
VGL = –6.3 V
VGL = –6.4 V
VGL = –6.5 V
VGL = –6.6 V
VGL = –6.7 V
VGL = –6.8 V
VGL = –6.9 V
VGL = –7.0 V
VGL = –7.1 V
VGL = –7.2 V
VGL = –7.3 V
VGL = –7.4 V
VGL = –7.5 V
VGL = –7.6 V
VGL = –7.7 V
VGL = –7.8 V
VGL = –7.9 V
VGL = –8.0 V
Reserved
Bits
7-6
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
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V25 (07h)
The V25 register can be written to and read from.
Table 10. V25 Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
V25
V25
Bits
3-0
These bits select V25 buck converter’s output voltage
0000
0001
0010
0011
0100
0101
0110
0111
V25 = 1.5 V
V25 = 1.6 V
V25 = 1.7 V
V25 = 1.8 V
V25 = 1.9 V
V25 = 2.0 V
V25 = 2.1 V
V25 = 2.2 V
1000
1001
1010
1011
1100
1101
1110
1111
V25 = 2.3 V
V25 = 2.4 V
V25 = 2.5 V
V25 = 2.6 V
V25 = 2.7 V
V25 = 2.8 V
V25 = 2.9 V
V25 = 3.0 V
Reserved
Bits
7-4
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
VDIV (08h)
The VDIV register can be written to and read from.
Table 11. VDIV Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
VDIV
VDIV
Bits
3-0
These bits select the threshold voltage of the RESET signal
000
001
010
011
100
101
110
111
VDIV = 1.2 V
VDIV = 1.4 V
VDIV = 1.6 V
VDIV = 1.8 V
VDIV = 2.0 V
VDIV = 2.2 V
VDIV = 2.4 V
VDIV = 2.6 V
Reserved
Bits
7-4
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
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RESET (09h)
The RESET register can be written to and read from.
Table 12. RESET Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
RESET
RESET
Bits
3-0
These bits select the RESET generate delay time period
0000
0001
0010
0011
0100
0101
0110
0111
TRESET = 0 ms
TRESET = 2 ms
TRESET = 4 ms
TRESET = 6 ms
TRESET = 8 ms
TRESET = 10 ms
TRESET = 12 ms
TRESET = 14 ms
1000
1001
1010
1011
1100
1101
1110
1111
TRESET = 16 ms
TRESET = 18 ms
TRESET = 20 ms
TRESET = 22 ms
TRESET = 24 ms
TRESET = 26 ms
TRESET = 28 ms
TRESET = 30 ms
Reserved
Bits
7-4
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
DLY (0Ah)
The DLY register can be written to and read from.
Table 13. DLY Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
DLY
DLY
Bits
1-0
These bits configure the gate voltage shaping delay time period
00
01
10
11
VDLY = 0 ms
VDLY = 20 ms
VDLY = 40 ms
VDLY = 60 ms
Reserved
Bits
7-2
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
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VCOMHOT (0Bh)
The VCOMHOT1 register can be written to and read from.
Table 14. VCOMHOT Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
VCOMHOT
VCOMHOT
Bits
These bits select VCOM output voltage at hot temperatures (VCOMT = 0) or all temperature range (VCOMT =
1).
VCOMR = 0
VCOMR = 1
00000000
00000001
00000010
…..
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
VCOMHOT = N.A
00100111
00101000
00101001
00101010
00101011
10111100
…..
VCOMHOT = 0.80 V VCOMHOT = 0.20 V
VCOMHOT = 0.82 V VCOMHOT = 0.18 V
VCOMHOT = 0.84 V VCOMHOT = 0.16 V
VCOMHOT = 0.86 V VCOMHOT = 0.14 V
VCOMHOT = 0.86 V VCOMHOT = 0.12 V
…..
…..
11111101
11111110
11111111
VCOMHOT = 5.06 V VCOMHOT = –4.06 V
VCOMHOT = 5.08 V VCOMHOT = –4.08 V
VCOMHOT = 5.10 V VCOMHOT = –4.10 V
VCOMCOLD (0Ch)
The VCOMCOLD register can be written to and read from.
Table 15. VCOMCOLD Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
VCOMCOLD
VCOMCOLD
Bits
These bits select VCOM output voltage at cold temperatures (VCOMT=0)
VCOMR = 0
VCOMR = 1
00000000
00000001
00000010
…..
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
VCOMCOLD = N.A
00100111
00101000
00101001
00101010
00101011
10111100
…..
VCOMCOLD = 0.80 V VCOMCOLD = 0.20 V
VCOMCOLD = 0.82 V VCOMCOLD = 0.18 V
VCOMCOLD = 0.84 V VCOMCOLD = 0.16 V
VCOMCOLD = 0.86 V VCOMCOLD = 0.14 V
VCOMCOLD = 0.86 V VCOMCOLD = 0.12 V
…..
…..
11111101
11111110
11111111
VCOMCOLD = 5.06 V VCOMCOLD = –4.06 V
VCOMCOLD = 5.08 V VCOMCOLD = –4.08 V
VCOMCOLD = 5.10 V VCOMCOLD = –4.10 V
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Control (FFh)
Table 16. Control Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WED
Reserved
RED
RED
Bit
0
The state of this bit determines whether read operations return the contents of the DAC registers or the
contents of the E2PROM
0
1
Read operations return the contents of the DAC registers
Read operations return the contents of the E2PROM
Reserved
WED
Bits
6-1
These bits are reserved for future use. During write operations data intended for these bits is ignored, and
during read operations 0 is returned.
Bit
7
Setting this bit forces the contents of all DAC registers to be copied into E2PROM, thereby making them the
default values during power-up.
When the contents of all the DAC registers have been written to the E2PROM, the TPS65640 automatically
resets this bit.
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Example – Writing to a Single RAM Register
1. Bus master sends START condition.
2. Bus master sends 7-bit slave address plus low R/W bit (E8h).
3. TPS65640 acknowledges.
4. Bus master sends address of RAM register (00h).
5. TPS65640 acknowledges.
6. Bus master sends data to be written.
7. TPS65640 acknowledges.
8. Bus master sends STOP condition.
E8h
00h
DATA
7-Bit Slave Address
RAM Register Address
RAM Register Data
S
0
A
A
A P
Figure 41. Writing to a Single RAM Register
Example – Writing to Multiple RAM Registers
1. Bus master sends START condition.
2. Bus master sends 7-bit slave address plus low R/W bit (E8h).
3. TPS65640 acknowledges.
4. Bus master sends address of first RAM register to be written to (00h).
5. TPS65640 acknowledges.
6. Bus master sends data to be written to first RAM register.
7. TPS65640 acknowledges.
8. Bus master sends data to be written to RAM register at next higher address (auto-increment).
9. TPS65640 acknowledges.
10. Steps (8) and (9) repeated until data for final RAM register has been sent.
11. TPS65640 acknowledges.
12. Bus master sends STOP condition.
E8h
00h
DATA
DATA
RAM Register Data (n+1)
7-Bit Slave Address
RAM Register Address (n)
RAM Register Data (n)
S
0
A
A
A
A
DATA
RAM Register Data (Last)
A
P
Figure 42. Writing to Multiple RAM Registers
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Example – Saving Contents of all RAM Registers to E2PROM
1. Bus master sends START condition.
2. Bus master sends 7-bit slave address plus low R/W bit (E8h).
3. TPS65640 acknowledges.
4. Bus master sends address of Control Register (FFh).
5. TPS65640 acknowledges.
6. Bus master sends data to be written to the Control Register (80h).
7. TPS65640 acknowledges.
8. Bus master sends STOP condition.
E8h
FFh
80h
7-Bit Slave Address
Control Register Address
Control Register Data
S
0
A
A
A P
Figure 43. Saving Contents of all RAM Registers to E2PROM
The TPS65640 needs 50ms time period after TPS65640 receiving STOP condition for saving all RAM registers
data to E2PROM. If bus master send 7-bit slave address to call TPS65640 again within 50ms period, the
TPS65640 will pull down the SCL line to LOW until the all RAM registers data saving to E2PROM is completed.
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Example – Reading from a Single RAM Register
1. Bus master sends START condition.
2. Bus master sends 7-bit slave address plus low R/W bit (E8h).
3. TPS65640 acknowledges.
4. Bus master sends address of Control Register (FFh).
5. TPS65640 acknowledges.
6. Bus master sends data for Control Register (00h).
7. TPS65640 acknowledges.
8. Bus master sends STOP condition.
9. Bus master sends START condition.
10. Bus master sends 7-bit slave address plus low R/W bit (E8h).
11. TPS65640 acknowledges.
12. Bus master sends address of RAM register (00h).
13. TPS65640 acknowledges.
14. Bus master sends REPEATED START condition.
15. Bus master sends 7-bit slave address plus high R/W bit (E9h).
16. TPS65640 acknowledges.
17. TPS65640 sends RAM register data.
18. Bus master does not acknowledge.
19. Bus master sends STOP condition.
E8h
FFh
00h
7-Bit Slave Address
Control Register Address
Control Register Data
S
S
0
0
A
A
A
A
1
P
A
E8h
00h
E9h
DATA
7-Bit Slave Address
RAM Register Address
7-Bit Slave Address
RAM Register Data
A
Sr
A P
Figure 44. Reading from a Single RAM Register
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Example – Reading from a Single E2PROM Register
1. Bus master sends START condition.
2. Bus master sends 7-bit slave address plus low R/W bit (E8h).
3. TPS65640 acknowledges.
4. Bus master sends address of Control Register (FFh).
5. TPS65640 acknowledges.
6. Bus master sends data for Control Register (01h).
7. TPS65640 acknowledges.
8. Bus master sends STOP condition.
9. Bus master sends START condition.
10. Bus master sends 7-bit slave address plus low R/W bit (E8h).
11. TPS65640 acknowledges.
12. Bus master sends address of E2PROM register (00h).
13. TPS65640 acknowledges.
14. Bus master sends REPEATED START condition.
15. Bus master sends 7-bit slave address plus high R/W bit (E9h).
16. TPS65640 acknowledges.
17. TPS65640 sends E2PROM register data.
18. Bus master does not acknowledge.
19. Bus master sends STOP condition.
E8h
FFh
01h
7-Bit Slave Address
Control Register Address
Control Register Data
S
0
A
A
A
A
1
P
A
E8h
00h
E2PROM Register Address
E9h
DATA
E2PROM Register Data
7-Bit Slave Address
7-Bit Slave Address
S
0
A
Sr
A P
Figure 45. Reading from a Single E2PROM Register
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Example – Reading from Multiple RAM Registers
1. Bus master sends START condition.
2. Bus master sends 7-bit slave address plus low R/W bit (E8h).
3. TPS65640 acknowledges.
4. Bus master sends address of Control Register (FFh).
5. TPS65640 acknowledges.
6. Bus master sends data for Control Register (00h).
7. TPS65640 acknowledges.
8. Bus master sends STOP condition.
9. Bus master sends START condition.
10. Bus master sends 7-bit slave address plus low R/W bit (E8h).
11. TPS65640 acknowledges.
12. Bus master sends address of first register to be read (00h).
13. TPS65640 acknowledges.
14. Bus master sends REPEATED START condition.
15. Bus master sends 7-bit slave address plus high R/W bit (E9h).
16. TPS65640 acknowledges.
17. TPS65640 sends contents of first RAM register to be read.
18. Bus master acknowledges.
19. Bus master sends contents of second RAM register to be read.
20. Bus master acknowledges.
21. TPS65640 sends contents of third (last) RAM register to be read.
22. Bus master does not acknowledge.
23. Bus master sends STOP condition.
E8h
FFh
00h
7-Bit Slave Address
Control Register Address
Control Register Data
S
0
A
A
A
A
1
P
A
E8h
00h
E9h
DATA
7-Bit Slave Address
RAM Register Address (n)
7-Bit Slave Address
RAM Register Data (n)
S
0
A
Sr
A
P
DATA
DATA
RAM Register Data (Last)
RAM Register Data (n+1)
A
A
Figure 46. Reading from Multiple RAM Registers
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Example – Reading from Multiple E2PROM Registers
1. Bus master sends START condition.
2. Bus master sends 7-bit slave address plus low R/W bit (E8h).
3. TPS65640 acknowledges.
4. Bus master sends address of Control Register (FFh).
5. TPS65640 acknowledges.
6. Bus master sends data for Control Register (01h).
7. TPS65640 acknowledges.
8. Bus master sends STOP condition.
9. Bus master sends START condition.
10. Bus master sends 7-bit slave address plus low R/W bit (E8h).
11. TPS65640 acknowledges.
12. Bus master sends address of first E2PROM register to be read (00h).
13. TPS65640 acknowledges.
14. Bus master sends REPEATED START condition.
15. Bus master sends 7-bit slave address plus high R/W bit (E9h).
16. TPS65640 acknowledges.
17. TPS65640 sends contents of first E2PROM register to be read.
18. Bus master acknowledges.
19. Bus master sends contents of second E2PROM register to be read.
20. Bus master acknowledges.
21. TPS65640 sends contents of third (last) E2PROM register to be read.
22. Bus master does not acknowledge.
23. Bus master sends STOP condition.
E8h
FFh
01h
7-Bit Slave Address
Control Register Address
Control Register Data
S
0
A
A
A
A
1
P
A
E8h
00h
E2PROM Register Address (n)
E9h
DATA
E2PROM Register Data (n)
7-Bit Slave Address
7-Bit Slave Address
S
0
A
Sr
A
P
DATA
E2PROM Register Data (n+1)
DATA
E2PROM Register Data (Last)
A
A
Figure 47. Reading from Multiple E2PROM Registers
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SLVSCE2 –NOVEMBER 2013
Configuration Parameter VCOM
The VCOM register can be written to and read from.
Table 17. VCOM Register Bit Allocation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
VCOM
P
P
Bit
0
During write operations, this bit determines the target for the data:
0 = Data written to E2PROM and RAM register
1 = Data written to RAM register only
During read operations this bit indicates whether the contents of the E2PROM and RAM register are the same
0 = E2PROM and RAM register contents are the same
1 = E2PROM and RAM register contents are different
VCOM
Bits
7-1
During write operations, these bits contain the data to be written.
During read operations, these bits return the contents of the RAM.
The factory default setting is 1000000.
Where VCOM is a 7-bit integer between 0 and 127 decimal.
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Example – Writing a VCOM Value of 77h to VCOM Register Only
1. The bus master sends a START condition.
2. The bus Master sends (9E hexadecimal (7-bit slave address plus low R/W bit).
3. TPS65640 slave acknowledges.
4. The bus master sends EF hexadecimal (data to be written plus LSB = '1').
5. The TPS65640 slave acknowledges.
6. The bus master sends a STOP condition.
9Eh
EFh
7-Bit Slave Address
Data to be Written
S
0
A
1
A
P
Figure 48. Writing a VCOM Value of 77h to RAM Only
Example – Writing a VCOM Value of 77h to E2PROM and RAM
1. The bus master sends a START condition.
2. The bus Master sends 9E hexadecimal (7-bit slave address plus low R/W bit).
3. TPS65640 slave acknowledges.
4. The bus master sends EE hexadecimal (data to be written plus LSB = '0').
5. The TPS65640 slave acknowledges.
6. The bus master sends a STOP condition.
9Eh
EEh
7-Bit Slave Address
Data to be Written
S
0
A
0
A
P
Figure 49. Writing a VCOM Value of 77h to E2PROM and RAM
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SLVSCE2 –NOVEMBER 2013
Example – Reading a VCOM Value of 77h from RAM when E2PROM Contents are Identical
1. The bus master sends a START condition.
2. The bus Master sends 9F hexadecimal (7-bit slave address plus low R/W bit).
3. TPS65640 slave acknowledges.
4. The bus master sends EE hexadecimal from E2PROM (data to be read plus LSB = '0').
5. The bus master does not acknowledge.
6. The bus master sends a STOP condition.
9Fh
EEh
7-Bit Slave Address
Data to be Read
S
1
A
0 A P
Figure 50. Reading 77h from RAM when E2PROM Contents are Identical
Example – Reading a VCOM Value of 77h from RAM when E2PROM Contents are Different
1. The bus master sends a START condition.
2. The bus Master sends 9F hexadecimal (7-bit slave address plus low R/W bit).
3. TPS65640 slave acknowledges.
4. The bus master sends EF hexadecimal from RAM (data to be read plus LSB = '1').
5. The bus master does not acknowledge.
6. The bus master sends a STOP condition.
9Fh
EFh
7-Bit Slave Address
Data to be Read
S
1
A
1 A P
Figure 51. Reading 77h from E2PROM when RAM Contents are Different
I2C INTERFACE
Configuration parameters and the VCOM voltage setting are programmed via an industry standard I2C serial
interface. The TPS65640 always works as a slave device and supports standard (100kbps) and fast (400kbps)
modes of operation.
During write operations, all further attempts to access its slave addresses are ignored until the current write
operation has completed.
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SLVSCE2 –NOVEMBER 2013
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POWER SEQUENCY
Buck converter (V25Buck) or the linear regulator (V25LDO) start as soon as VIN > VUVLO
.
The reset generator holds RST low until tRESET seconds after V25 has reached power good status.
Boost converter 1 starts after V25 reached power good status.
Boost converter 2 starts as soon as AVDD has reached power good status.
Figure 52 show the typical power-up/down characteristic of the TPS65640.
VIN > VUVLO
V25 < VUVLO
VIN
tSS2
V25 > VDIV
V25 < VDIV
V25
tRESET
RST
AVDD
VGH
tSS1
tSS4
VGL
tDLY
VGHM
Figure 52. Power-Up and Power-Down Sequencing
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SLVSCE2 –NOVEMBER 2013
UNDERVOLTAGE LOCKOUT
An undervoltage lockout function disables the IC when the supply voltage is too low for proper operation. A low-
pass filter at the input of the UVLO comparator ensures that short transients on VIN do not cause premature
shutdown of the IC.
Low Pass
VIN
Filter
UVLO
VUVLO
Figure 53. Undervoltage Lockout Comparator with Low-Pass Filter
THERMAL SHUTDOWN
A thermal shutdown function automatically disables all functions if the device’s junction temperature exceeds the
safe maximum. The device automatically starts operating again once it has cooled down and operation may
safely continue. A restart after a thermal shutdown event follows the same sequence as following a normal
power-up condition (see Figure 52).
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TPS65640
SLVSCE2 –NOVEMBER 2013
www.ti.com
APPLICATION INFORMATION
10 µH
2.5 V~5.5 V
AVDD
VIN
10 µF
10 µF
LX
BOOST
AVDD
COMP
VIN
200 kΩ
1 nF
10 µF
CONVERTER 1
AVDD
10 µH
BOOST
10 kΩ @ 25°C
R1
VGH
CONVERTER 2
VT
VGH_LX
4.7 µF
R2
VGH
FLK
RE
GATE
VOLTAGE SHAPING
VGHM
VGHM
RE
µH
4.7
V25
V25_LX
V25
LX
BUCK/LDO
10µF
CONVERTER
V25
10 kΩ
220 nF
RESET
To TCON
RESET
GENERATOR
100 kΩ
1µF
DRVN
VGL
NEGATIVE
LINEAR REGULATOR
VGL
1µF
SDA
SCL
I2C INTERFACE
PROGRAMMABLE
VCOM
VCOM_OUT
BUFFER
VINA+
VINA-
VINB+
VINB-
OPERATIONAL
AMPLIFIER
VOUTA
VOUTB
PGND
AGND
Figure 54. Typical Application Circuit
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SLVSCE2 –NOVEMBER 2013
LAYOUT RECOMMENDATION
As for all switching power supplies, especially those providing high current and using high switching frequencies,
layout is an important design step. If layout is not carefully done, the regulator could show instability as well as
EMI problems. Therefore, use wide and short traces for high current paths. The input capacitor in the typical
application circuit, should also be placed close to the VIN pin, but also to the GND in order to reduce the input
ripple seen by the IC. The LX pin carries high current with fast rising and falling edges. Therefore, the connection
between the pin to the inductor and schottky diode should be kept as short and wide as possible. It is also
beneficial to have the ground of the output capacitor for both Boost converter 1, Boost converter 2 and Buck
converter close to the PGND pin since there is a large ground return current flowing between them. When laying
out signal grounds, it is recommended to use short traces separated from power ground traces, and connect
them together at a single point, for example on the thermal pad. The thermal pad needs to be soldered on to the
PCB and connected to the GND pin of the IC. An additional thermal via can significantly improve power
dissipation of the IC.
VIN
V25
PGND
VIN
PGND
PGND
AVDD
24 23 22 21 20 19 18 17 16 15
25
14
13
12
11
PGND
26
27
28
PGND
1
2
3
4
5
6
7
8
9 10
VGH
PGND
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PACKAGE OPTION ADDENDUM
www.ti.com
6-May-2013
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
Samples
Drawing
Qty
(1)
(2)
(3)
(4)
TPS65640RHRR
PREVIEW
WQFN
RHR
28
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
PZXI
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS65640RHRR
ACTIVE
WQFN
RHR
28
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
PZXI
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
GENERIC PACKAGE VIEW
RHR 28
3.5 x 5.5, 0.5 mm pitch
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4210249/B
www.ti.com
PACKAGE OUTLINE
RHR0028A
WQFN - 0.8 mm max height
S
C
A
L
E
2
.
7
0
0
PLASTIC QUAD FLATPACK - NO LEAD
3.6
3.4
B
A
PIN 1 INDEX AREA
0.5
0.3
5.6
5.4
0.3
0.2
DETAIL
OPTIONAL TERMINAL
TYPICAL
0.8 MAX
C
SEATING PLANE
0.08
0.05
0.00
2±0.1
2X 1.5
(0.2) TYP
EXPOSED
THERMAL PAD
11
14
24X 0.5
10
15
2X
4.5
4±0.1
SEE TERMINAL
DETAIL
1
24
0.3
28X
28
25
0.5
0.2
PIN 1 ID
(OPTIONAL)
0.1
C A
B
28X
0.3
0.05
4219075/A 11/2014
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
RHR0028A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(2)
SYMM
28X (0.6)
28X (0.25)
25
28
1
24
24X (0.5)
(0.66)
(5.3)
TYP
SYMM
(4)
(
0.2) TYP
VIA
15
10
11
14
(0.75) TYP
(3.3)
LAND PATTERN EXAMPLE
SCALE:15X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4219075/A 11/2014
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
www.ti.com
EXAMPLE STENCIL DESIGN
RHR0028A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
SYMM
(0.55) TYP
28
25
28X (0.6)
28X (0.25)
1
24
24X (0.5)
SYMM
(1.32)
TYP
(5.3)
METAL
TYP
6X (1.12)
15
10
14
11
6X (0.89)
(3.3)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD
75% PRINTED SOLDER COVERAGE BY AREA
SCALE:20X
4219075/A 11/2014
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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相关型号:
TPS65651-1/2/3
TPS65400-Q1 4.5- to 18-V Input Flexible Power Management Unit With PMBus/I2C Interface
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