TPS73701DRVR [TI]

1A Low-Dropout Regulator with Reverse Current Protection; 1A低压降稳压器具有反向电流保护
TPS73701DRVR
型号: TPS73701DRVR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

1A Low-Dropout Regulator with Reverse Current Protection
1A低压降稳压器具有反向电流保护

线性稳压器IC 调节器 电源电路 光电二极管 输出元件 信息通信管理
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中文:  中文翻译
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TPS737xx  
www.ti.com  
SBVS067O JANUARY 2006REVISED JUNE 2012  
1A Low-Dropout Regulator  
with Reverse Current Protection  
1
FEATURES  
DESCRIPTION  
The TPS737xx family of linear low-dropout (LDO)  
voltage regulators uses an NMOS pass element in a  
voltage-follower configuration. This topology is  
relatively insensitive to output capacitor value and  
ESR, allowing a wide variety of load configurations.  
Load transient response is excellent, even with a  
small 1.0μF ceramic output capacitor. The NMOS  
topology also allows very low dropout.  
2
Stable with 1.0μF or Larger Ceramic Output  
Capacitor  
Input Voltage Range: 2.2V to 5.5V  
Ultra-Low Dropout Voltage: 130mV typ at 1A  
Excellent Load Transient Response—Even  
With Only 1.0μF Output Capacitor  
NMOS Topology Delivers Low Reverse  
Leakage Current  
The TPS737xx family uses an advanced BiCMOS  
process to yield high precision while delivering very  
low dropout voltages and low ground pin current.  
Current consumption, when not enabled, is under  
20nA and ideal for portable applications. These  
devices are protected by thermal shutdown and  
foldback current limit.  
1.0% Initial Accuracy  
3% Overall Accuracy Over Line, Load, and  
Temperature  
Less Than 20nA typical IQ in Shutdown Mode  
Thermal Shutdown and Current Limit for Fault  
Protection  
DRB PACKAGE  
3mm x 3mm SON  
(TOP VIEW)  
Available in Multiple Output Voltage Versions  
Adjustable Output: 1.20V to 5.5V  
OUT  
N/C  
1
2
3
4
8
7
6
5
IN  
Custom Outputs Available Using Factory  
Package-Level Programming  
N/C  
N/C  
EN  
NR/FB  
GND  
APPLICATIONS  
Point of Load Regulation for DSPs, FPGAs,  
ASICs, and Microprocessors  
DCQ PACKAGE  
SOT223  
Post-Regulation for Switching Supplies  
Portable/Battery-Powered Equipment  
(TOP VIEW)  
DRV PACKAGE(1)  
2mm x 2mm SON  
(TOP VIEW)  
6
3
TAB IS GND  
Optional  
OUT  
NR/FB  
GND  
1
2
3
6
5
4
IN  
VIN  
VOUT  
1.0mF  
IN  
OUT  
FB  
N/C  
EN  
1
2
4
5
TPS737xx  
EN  
GND  
IN  
ON  
GND  
EN  
OFF  
OUT NR/FB  
(1) Power dissipation may limit operating  
range. Check Thermal Information table.  
Typical Application Circuit  
space  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2006–2012, Texas Instruments Incorporated  
TPS737xx  
SBVS067O JANUARY 2006REVISED JUNE 2012  
www.ti.com  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
ORDERING INFORMATION(1)  
(2)  
PRODUCT  
VOUT  
TPS737xx yy yz  
XX is nominal output voltage (for example, 25 = 2.5V, 01 = Adjustable(3)).  
YYY is package designator.  
Z is package quantity.  
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the  
device product folder at www.ti.com.  
(2) Most output voltages of 1.25V and 1.3V to 5.0V in 100mV increments are available on a quick-turn basis using innovative factory  
package-level programming. Minimum order quantities apply; contact factory for details and availability.  
(3) For fixed 1.20V operation, tie FB to OUT.  
ABSOLUTE MAXIMUM RATINGS(1)  
Over operating free-air temperature range unless otherwise noted.  
PARAMETER  
TPS737xx  
–0.3 to +6.0  
–0.3 to +6.0  
–0.3 to +5.5  
–0.3 to +6.0  
Internally limited  
Indefinite  
UNIT  
VIN range  
V
V
V
V
VEN range  
VOUT range  
VNR, VFB range  
Peak output current  
Output short-circuit duration  
Continuous total power dissipation  
Junction temperature range, TJ  
Storage temperature range  
ESD rating, HBM  
See Thermal Information table  
–55 to +150  
°C  
°C  
kV  
V
–65 to +150  
2
ESD rating, CDM  
500  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics  
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.  
2
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Copyright © 2006–2012, Texas Instruments Incorporated  
TPS737xx  
www.ti.com  
SBVS067O JANUARY 2006REVISED JUNE 2012  
THERMAL INFORMATION  
TPS737xx(2)  
THERMAL METRIC(1)  
DRB  
8 PINS  
49.5  
58.9  
25.1  
1.7  
DCQ  
6 PINS  
53.1  
35.2  
7.8  
DRV(3)  
6 PINS  
67.2  
87.6  
36.8  
1.8  
UNITS  
θJA  
Junction-to-ambient thermal resistance(4)  
Junction-to-case (top) thermal resistance(5)  
Junction-to-board thermal resistance(6)  
Junction-to-top characterization parameter(7)  
Junction-to-board characterization parameter(8)  
Junction-to-case (bottom) thermal resistance(9)  
θJCtop  
θJB  
°C/W  
ψJT  
2.9  
ψJB  
25.2  
8.6  
7.7  
37.2  
7.7  
θJCbot  
N/A  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A.  
(2) Thermal data for the DRB, DCQ, and DRV packages are derived by thermal simulations based on JEDEC-standard methodology as  
specified in the JESD51 series. The following assumptions are used in the simulations:  
(a) i. DRB: The exposed pad is connected to the PCB ground layer through  
ii. DCQ: The exposed pad is connected to the PCB ground layer through  
a
2x2 thermal via array.  
.
a 3x2 thermal via array.  
. iii. DRV: The exposed pad is connected to the PCB ground layer through a 2x2 thermal via array. Due to size limitation of thermal  
pad, 0.8-mm pitch array is used which is off the JEDEC standard.  
(b) The top copper layer has a detailed copper trace pattern. The bottom copper layer is assumed to have a 20% thermal conductivity of  
copper, representing a 20% copper coverage.  
(c) These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3in × 3in copper area. To  
understand the effects of the copper area on thermal performance, see the Power Dissipation and Estimating Junction Temperature  
sections of this data sheet.  
(3) Power dissipation may limit operating range.  
(4) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as  
specified in JESD51-7, in an environment described in JESD51-2a.  
(5) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the top of the package. No specific JEDEC-  
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
(6) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB  
temperature, as described in JESD51-8.  
(7) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7).  
(8) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7).  
(9) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific  
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
Copyright © 2006–2012, Texas Instruments Incorporated  
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SBVS067O JANUARY 2006REVISED JUNE 2012  
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ELECTRICAL CHARACTERISTICS  
Over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 1.0V(1), IOUT = 10mA, VEN = 2.2V, and  
COUT = 2.2μF, unless otherwise noted. Typical values are at TJ = +25°C.  
TPS737xx  
PARAMETER  
Input voltage range(1)(2)  
TEST CONDITIONS  
MIN  
TYP  
MAX  
5.5  
UNIT  
VIN  
2.2  
V
Internal reference  
(DCQ package)  
TJ = +25°C  
1.198  
1.192  
1.2  
1.2  
1.210  
1.216  
VFB  
V
V
Internal reference  
(DRB and DRV packages)  
TJ = +25°C  
Output voltage range  
(TPS73701)(3)  
VFB  
5.5 – VDO  
+1.0  
Nominal  
TJ = +25°C  
–1.0  
5.36V < VIN < 5.5V, VOUT = 5.08V,  
10mA < IOUT < 800mA,  
–40C < TJ < +85°C, TPS73701DCQ  
VOUT  
Accuracy(1) ,  
–2.0  
–3.0  
+2.0  
+3.0  
%
(4)  
over VIN, IOUT  
and T  
,
VOUT + 0.5V VIN 5.5V;  
10mA IOUT 1A  
±0.5  
ΔVOUT%/ΔVIN  
ΔVOUT%/ΔIOUT  
Line regulation(1)  
VOUT(nom) + 0.5V VIN 5.5V  
1mA IOUT 1A  
0.01  
0.002  
%/V  
Load regulation  
%/mA  
10mA IOUT 1A  
0.0005  
Dropout voltage(5)  
(VIN = VOUT(nom) – 0.1V)  
VDO  
IOUT = 1A  
130  
500  
2.2  
mV  
ZO(DO)  
ICL  
Output impedance in dropout  
Output current limit  
2.2V VIN VOUT + VDO  
VOUT = 0.9 × VOUT(nom)  
VOUT = 0V  
0.25  
1.6  
450  
0.1  
400  
1300  
20  
A
1.05  
ISC  
Short-circuit current  
Reverse leakage current(6) (–IIN  
mA  
μA  
IREV  
)
VEN 0.5V, 0V VIN VOUT  
IOUT = 10mA (IQ)  
IOUT = 1A  
IGND  
GND pin current  
μA  
ISHDN  
IFB  
Shutdown current (IGND  
)
VEN 0.5V, VOUT VIN 5.5  
nA  
FB pin current (TPS73701)  
0.1  
58  
0.6  
μA  
f = 100Hz, IOUT = 1A  
f = 10kHz, IOUT = 1A  
Power-supply rejection ratio  
(ripple rejection)  
PSRR  
VN  
dB  
37  
Output noise voltage  
BW = 10Hz to 100kHz  
COUT = 10μF  
27 × VOUT  
600  
μVRMS  
tSTR  
Startup time  
VOUT = 3V, RL = 30, COUT = 1μF  
μs  
V
VEN(HI)  
VEN(LO)  
IEN(HI)  
EN pin high (enabled)  
EN pin low (shutdown)  
EN pin current (enabled)  
1.7  
0
VIN  
0.5  
V
VEN = 5.5V  
20  
+160  
+140  
nA  
Shutdown, temperature increasing  
Reset, temperature decreasing  
TSD  
TJ  
Thermal shutdown temperature  
Operating junction temperature  
°C  
°C  
–40  
+125  
(1) Minimum VIN = VOUT + VDO or 2.2V, whichever is greater.  
(2) For VOUT(nom) < 1.6V, when VIN 1.6V, the output will lock to VIN and may result in an over-voltage condition on the output. To avoid this  
situation, disable the device before powering down VIN  
.
(3) TPS73701 is tested at VOUT = 1.2V.  
(4) Tolerance of external resistors not included in this specification.  
(5) VDO is not measured for fixed output versions with VOUT(nom) < 2.3V since minimum VIN = 2.2V.  
(6) Fixed-voltage versions only; refer to the Applications section for more information.  
4
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TPS737xx  
www.ti.com  
SBVS067O JANUARY 2006REVISED JUNE 2012  
FUNCTIONAL BLOCK DIAGRAMS  
IN  
4MHz  
Charge Pump  
EN  
Thermal  
Protection  
Ref  
Servo  
27k  
Bandgap  
Error  
Amp  
Current  
Limit  
OUT  
8k  
GND  
R1  
R1 + R2 = 80k  
R2  
NR  
Figure 1. Fixed Voltage Version  
IN  
Table 1. Standard 1%  
Resistor Values for  
Common Output Voltages  
V
O
R
1
R
2
4MHz  
1.2V  
1.5V  
1.8V  
2.5V  
2.8V  
3.0V  
3.3V  
Short  
Open  
Charge Pump  
23.2k  
28.0kΩ  
39.2kΩ  
44.2kΩ  
46.4kΩ  
52.3kΩ  
95.3kΩ  
56.2kΩ  
36.5kΩ  
33.2kΩ  
30.9kΩ  
30.1kΩ  
EN  
Thermal  
Protection  
Ref  
Servo  
27k  
Bandgap  
Error  
Amp  
NOTE: V  
= (R + R )/R × 1.204;  
1 2 2  
OUT  
OUT  
FB  
Current  
Limit  
R
R
19kfor best  
1
2
accuracy.  
GND  
80k  
8k  
R1  
R2  
Figure 2. Adjustable Voltage Version  
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TPS737xx  
SBVS067O JANUARY 2006REVISED JUNE 2012  
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PIN CONFIGURATIONS  
DCQ PACKAGE  
SOT223-6  
(TOP VIEW)  
DRB PACKAGE  
3mm x 3mm SON  
(TOP VIEW)  
6
3
TAB IS GND  
OUT  
N/C  
1
2
3
4
8
7
6
5
IN  
N/C  
N/C  
EN  
NR/FB  
GND  
1
2
4
5
IN  
GND  
EN  
OUT NR/FB  
DRV PACKAGE(1)  
2mm x 2mm SON  
(TOP VIEW)  
OUT  
NR/FB  
GND  
1
2
3
6
5
4
IN  
N/C  
EN  
(1) Power dissipation may limit operating range. Check Thermal Information table.  
Table 1. Pin Descriptions  
SOT223  
(DCQ)  
3×3 SON  
(DRB)  
2×2 SON  
(DRV)  
PIN  
NAME  
PIN NO.  
PIN NO.  
PIN NO.  
DESCRIPTION  
IN  
1
8
6
Unregulated input supply  
Ground  
GND  
3, 6  
4, Pad  
3, Pad  
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts  
the regulator into shutdown mode. Refer to the Shutdown section under  
Applications Information for more details. EN must not be left floating and can  
be connected to IN if not used.  
EN  
5
5
4
Fixed voltage versions only—connecting an external capacitor to this pin  
bypasses noise generated by the internal bandgap, reducing output noise to  
very low levels.  
NR  
FB  
4
4
3
3
2
2
Adjustable voltage version only—this is the input to the control loop error  
amplifier, and is used to set the output voltage of the device.  
OUT  
NC  
2
1
1
5
Regulator output. A 1.0μF or larger capacitor of any type is required for stability.  
2, 6, 7  
Not connected  
6
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TPS737xx  
www.ti.com  
SBVS067O JANUARY 2006REVISED JUNE 2012  
TYPICAL CHARACTERISTICS  
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2μF, unless otherwise  
noted.  
LOAD REGULATION  
LINE REGULATION  
0.5  
0.4  
0.20  
0.15  
0.10  
0.05  
0
Referred to IOUT = 10mA  
Referred to VIN = VOUT + 1.0V at IOUT = 10mA  
-40°C  
+25°C  
+125°C  
0.3  
0.2  
+25°C  
+125°C  
0.1  
0
-0.1  
-0.2  
-0.3  
-0.4  
-0.5  
-0.05  
-0.10  
-0.15  
-0.20  
-40°C  
0
100 200 300 400 500 600 700 800 900 1000  
IOUT (mA)  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0 3.5  
4.0  
4.5  
V
IN - VOUT (V)  
Figure 3.  
Figure 4.  
DROPOUT VOLTAGE vs OUTPUT CURRENT  
DROPOUT VOLTAGE vs TEMPERATURE  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
VOUT = 2.5V  
+125°C  
+25°C  
60  
60  
-40°C  
40  
40  
20  
20  
0
0
0
100 200 300 400 500 600 700 800 900 1000  
IOUT (mA)  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (°C)  
Figure 5.  
Figure 6.  
OUTPUT VOLTAGE HISTOGRAM  
OUTPUT VOLTAGE DRIFT HISTOGRAM  
30  
25  
20  
15  
10  
5
18  
16  
14  
12  
10  
8
IOUT = 10mA  
IOUT = 10mA  
6
4
2
0
0
VOUT Error (%)  
Worst Case dVOUT/dT (ppm/°C)  
Figure 7.  
Figure 8.  
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TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2μF, unless otherwise  
noted.  
GROUND PIN CURRENT vs OUTPUT CURRENT  
GROUND PIN CURRENT vs TEMPERATURE  
3000  
2500  
2000  
1500  
1000  
500  
2500  
2000  
1500  
1000  
500  
IOUT = 1A  
VIN = 5.0V  
VIN = 5.0V  
VIN = 3.3V  
VIN = 3.3V  
VIN = 2.2V  
VIN = 2.2V  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
0
200  
400  
600  
800  
1000  
Temperature (°C)  
IOUT (mA)  
Figure 9.  
Figure 10.  
GROUND PIN CURRENT IN SHUTDOWN  
vs TEMPERATURE  
CURRENT LIMIT vs VOUT (FOLDBACK)  
1
2.00  
1.80  
1.60  
1.40  
1.20  
1.00  
0.80  
0.60  
0.40  
0.20  
0
VENABLE = 0.5V  
VIN = VOUT + 0.5V  
ICL  
0.1  
ISC  
VOUT = 3.3V  
0.01  
-0.5  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
-50  
-25  
0
25  
50  
75  
100  
125  
Output Voltage (V)  
Temperature (°C)  
Figure 11.  
Figure 12.  
CURRENT LIMIT vs VIN  
CURRENT LIMIT vs TEMPERATURE  
2.0  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
VOUT = 1.2V  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
-50  
-25  
0
25  
50  
75  
100  
125  
VIN (V)  
Temperature (°C)  
Figure 13.  
Figure 14.  
8
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TPS737xx  
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SBVS067O JANUARY 2006REVISED JUNE 2012  
TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2μF, unless otherwise  
noted.  
PSRR (RIPPLE REJECTION) vs FREQUENCY  
PSRR (RIPPLE REJECTION) vs VIN – VOUT  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
40  
35  
30  
25  
20  
15  
10  
5
IOUT = 100mA  
COUT = Any  
IOUT = 1mA  
COUT = 1mF  
IOUT = 1mA  
COUT = 10mF  
IO = 100mA  
CO = 1mF  
IOUT = 1mA  
COUT = Any  
Frequency = 10kHz  
COUT = 10mF  
IOUT = 100mA  
COUT = 10mF  
VOUT = 2.5V  
IOUT = 100mA  
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
10  
100  
1k  
10k  
100k  
1M  
10M  
VIN - VOUT (V)  
Frequency (Hz)  
Figure 15.  
Figure 16.  
TPS73701  
NOISE SPECTRAL DENSITY  
RMS NOISE VOLTAGE vs CFB  
1
60  
55  
50  
45  
40  
35  
30  
25  
20  
COUT = 1mF  
0.1  
COUT = 10mF  
VOUT = 2.5V  
COUT = 0mF  
R1 = 39.2kW  
IOUT = 150mA  
10Hz < Frequency < 100kHz  
0.01  
10  
100  
1k  
10k  
100k  
10p  
100p  
1n  
10n  
CFB (F)  
Frequency (Hz)  
Figure 17.  
Figure 18.  
RMS NOISE VOLTAGE vs CNR  
RMS NOISE VOLTAGE vs COUT  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
VOUT = 5.0V  
VOUT = 5.0V  
VOUT = 3.3V  
VOUT = 3.3V  
VOUT = 1.5V  
60  
40  
VOUT = 1.5V  
20  
CNR = 0.01mF  
COUT = 0mF  
10Hz < Frequency < 100kHz  
10Hz < Frequency < 100kHz  
0
0.1  
1
10  
1p  
10p  
100p  
1n  
10n  
COUT (mF)  
CNR (F)  
Figure 19.  
Figure 20.  
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TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2μF, unless otherwise  
noted.  
TPS73733  
TPS73733  
LOAD TRANSIENT RESPONSE  
LINE TRANSIENT RESPONSE  
CNR = 10nF  
CNR = 10nF  
COUT = 10mF  
VOUT  
200mV/div  
COUT = 10mF  
100mV/div  
VOUT  
1A  
5.3V  
10mA  
4.3V  
IOUT  
VIN  
10ms/div  
10ms/div  
Figure 21.  
Figure 22.  
TPS73701  
TPS73701  
TURN-ON RESPONSE  
TURN-OFF RESPONSE  
RL = 20W  
COUT = 10mF  
VOUT  
RL = 20W  
RL = 20W  
COUT = 1mF  
1V/div  
1V/div  
COUT = 1mF  
RL = 20W  
COUT = 10mF  
VOUT  
2V  
2V  
VEN  
1V/div  
1V/div  
0V  
0V  
VEN  
100ms/div  
100ms/div  
Figure 23.  
Figure 24.  
TPS73701, VOUT = 3.3V  
POWER-UP/POWER-DOWN  
IENABLE vs TEMPERATURE  
6
5
10  
1
VIN  
4
VOUT  
3
2
1
0.1  
0.01  
0
-1  
-2  
50ms/div  
-50  
-25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Figure 25.  
Figure 26.  
10  
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TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2μF, unless otherwise  
noted.  
TPS73701  
TPS73701  
RMS NOISE VOLTAGE vs CFB  
IFB vs TEMPERATURE  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
60  
VOUT = 2.5V  
40  
COUT = 0mF  
R1 = 39.2kW  
20  
10Hz < Frequency < 100kHz  
0
-50  
-25  
0
25  
50  
75  
100  
125  
10p  
100p  
1n  
10n  
Temperature (°C)  
CFB (F)  
Figure 27.  
Figure 28.  
TPS73701  
TPS73701  
LOAD TRANSIENT, ADJUSTABLE VERSION  
LINE TRANSIENT, ADJUSTABLE VERSION  
VOUT = 2.5V  
CFB = 10nF  
CFB = 10nF  
R1 = 39.2kW  
COUT = 10mF  
COUT = 10mF  
VOUT  
VOUT  
100mV/div  
100mV/div  
4.5V  
250mA  
3.5V  
IOUT  
VIN  
10mA  
10ms/div  
5ms/div  
Figure 29.  
Figure 30.  
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TPS737xx  
SBVS067O JANUARY 2006REVISED JUNE 2012  
www.ti.com  
APPLICATION INFORMATION  
The TPS737xx belongs to a family of new generation  
LDO regulators that use an NMOS pass transistor to  
achieve ultra-low-dropout performance, reverse  
current blockage, and freedom from output capacitor  
constraints. These features combined with an enable  
input make the TPS737xx ideal for portable  
applications. This regulator family offers a wide  
selection of fixed output voltage versions and an  
adjustable output version. All versions have thermal  
and over-current protection, including foldback  
current limit.  
For best accuracy, make the parallel combination of  
R1 and R2 approximately equal to 19k. This 19k,  
in addition to the internal 8kresistor, presents the  
same impedance to the error amp as the 27kΩ  
bandgap reference output. This impedance helps  
compensate for leakages into the error amp  
terminals.  
INPUT AND OUTPUT CAPACITOR  
REQUIREMENTS  
Although an input capacitor is not required for stability  
if input impedance is very low, it is good analog  
design practice to connect a 0.1μF to 1μF low  
equivalent series resistance (ESR) capacitor across  
the input supply near the regulator. This capacitor  
counteracts reactive input sources and improves  
transient response, noise rejection, and ripple  
rejection. A higher-value capacitor may be necessary  
if large, fast rise-time load transients are anticipated  
or the device is located several inches from the  
power source.  
Figure 31 shows the basic circuit connections for the  
fixed voltage models. Figure 32 gives the connections  
for the adjustable output version (TPS73701).  
VIN  
VOUT  
IN  
OUT  
TPS737xx  
EN  
GND  
ON  
OFF  
The TPS737xx requires a 1.0µF output capacitor for  
stability. It is designed to be stable for all available  
types and values of capacitors. In applications where  
multiple low ESR capacitors are in parallel, ringing  
may occur when the product of COUT and total ESR  
drops below 50nF. Total ESR includes all parasitic  
resistances, including capacitor ESR and board,  
socket, and solder joint resistance. In most  
applications, the sum of capacitor ESR and trace  
resistance will meet this requirement.  
Figure 31. Typical Application Circuit for Fixed-  
Voltage Versions  
Optional input capacitor.  
May improve source  
Output capacitor  
impedance, noise, or PSRR.  
must be ³ 1.0mF.  
VIN  
VOUT  
IN  
OUT  
TPS73701  
R1  
R2  
CFB  
EN  
GND  
FB  
OUTPUT NOISE  
ON  
OFF  
A precision bandgap reference is used to generate  
the internal reference voltage, VREF. This reference is  
the dominant noise source within the TPS737xx and  
it generates approximately 32μVRMS (10Hz to  
100kHz) at the reference output (NR). The regulator  
control loop gains up the reference noise with the  
same gain as the reference voltage, so that the noise  
voltage of the regulator is approximately given by:  
Optional capacitor  
reduces output noise  
and improves  
(R1 + R2)  
R2  
VOUT  
=
x 1.204  
transient response.  
Figure 32. Typical Application Circuit for  
Adjustable-Voltage Version  
(
)
VOUT  
VREF  
R1 ) R2  
VN + 32mVRMS  
 
+ 32mVRMS  
 
R1 and R2 can be calculated for any output voltage  
using the formula shown in Figure 32. Sample  
resistor values for common output voltages are  
shown in Figure 2.  
R2  
(1)  
Since the value of VREF is 1.2V, this relationship  
reduces to:  
mVRMS  
V
ǒ
Ǔ
+ 27ǒ Ǔ  
( )  
V
VN mVRMS  
  VOUT  
(2)  
for the case of no CNR  
.
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An internal 27kresistor in series with the noise  
reduction pin (NR) forms a low-pass filter for the  
voltage reference when an external noise reduction  
capacitor, CNR, is connected from NR to ground. For  
CNR = 10nF, the total noise in the 10Hz to 100kHz  
bandwidth is reduced by a factor of ~3.2, giving the  
approximate relationship:  
ENABLE PIN AND SHUTDOWN  
The enable pin (EN) is active high and is compatible  
with standard TTL-CMOS levels. A VEN below 0.5V  
(max) turns the regulator off and drops the GND pin  
current to approximately 10nA. When EN is used to  
shutdown the regulator, all charge is removed from  
the pass transistor gate, and the output ramps back  
up to a regulated VOUT (see Figure 23).  
mVRMS  
VN(mVRMS) = 8.5  
x VOUT(V)  
(
)
V
(3)  
When shutdown capability is not required, EN can be  
connected to VIN. However, the pass gate may not be  
discharged using this configuration, and the pass  
transistor may be left on (enhanced) for a significant  
time after VIN has been removed. This scenario can  
result in reverse current flow (if the IN pin is low  
impedance) and faster ramp times upon power-up. In  
addition, for VIN ramp times slower than a few  
milliseconds, the output may overshoot upon power-  
up.  
for CNR = 10nF.  
This noise reduction effect is shown as RMS Noise  
Voltage vs CNR in the Typical Characteristics section.  
The TPS73701 adjustable version does not have the  
NR pin available. However, connecting a feedback  
capacitor, CFB, from the output to the feedback pin  
(FB) reduces output noise and improve load transient  
performance. This capacitor should be limited to  
0.1µF.  
Note that current limit foldback can prevent device  
start-up under some conditions. See the Internal  
Current Limit section for more information.  
The TPS737xx uses an internal charge pump to  
develop an internal supply voltage sufficient to drive  
the gate of the NMOS pass element above VOUT. The  
charge pump generates ~250μV of switching noise at  
~4MHz; however, charge-pump noise contribution is  
negligible at the output of the regulator for most  
DROPOUT VOLTAGE  
The TPS737xx uses an NMOS pass transistor to  
achieve extremely low dropout. When (VIN – VOUT) is  
less than the dropout voltage (VDO), the NMOS pass  
device is in its linear region of operation and the  
input-to-output resistance is the RDS, ON of the NMOS  
pass element.  
values of IOUT and COUT  
.
BOARD LAYOUT RECOMMENDATION TO  
IMPROVE PSRR AND NOISE PERFORMANCE  
For large step changes in load current, the TPS737xx  
requires a larger voltage drop from VIN to VOUT to  
avoid degraded transient response. The boundary of  
this transient dropout region is approximately twice  
the dc dropout. Values of VIN – VOUT above this line  
ensure normal transient response.  
To improve ac performance such as PSRR, output  
noise, and transient response, it is recommended that  
the printed circuit board (PCB) be designed with  
separate ground planes for VIN and VOUT, with each  
ground plane connected only at the GND pin of the  
device. In addition, the ground connection for the  
bypass capacitor should connect directly to the GND  
pin of the device.  
Operating in the transient dropout region can cause  
an increase in recovery time. The time required to  
recover from a load transient is a function of the  
magnitude of the change in load current rate, the rate  
of change in load current, and the available  
headroom (VIN to VOUT voltage drop). Under worst-  
case conditions [full-scale instantaneous load change  
with (VIN – VOUT) close to dc dropout levels], the  
INTERNAL CURRENT LIMIT  
The TPS737xx internal current limit helps protect the  
regulator during fault conditions. Foldback current  
limit helps to protect the regulator from damage  
during output short-circuit conditions by reducing  
current limit when VOUT drops below 0.5V. See  
Figure 12 in the Typical Characteristics section.  
TPS737xx can take  
a
couple of hundred  
microseconds to return to the specified regulation  
accuracy.  
Note from Figure 12 that approximately –0.2V of VOUT  
results in a current limit of 0mA. Therefore, if OUT is  
forced below –0.2V before EN goes high, the device  
may not start up. In applications that work with both a  
positive and negative voltage supply, the TPS737xx  
should be enabled first.  
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TRANSIENT RESPONSE  
After the EN pin is driven low, no bias voltage is  
needed on any pin for reverse current blocking. Note  
that reverse current is specified as the current flowing  
out of the IN pin because of voltage applied on the  
OUT pin. There will be additional current flowing into  
the OUT pin as a result of the 80kinternal resistor  
divider to ground (see Figure 1 and Figure 2).  
The low open-loop output impedance provided by the  
NMOS pass element in  
a
voltage follower  
configuration allows operation without a 1.0µF output  
capacitor. As with any regulator, the addition of  
additional capacitance from the OUT pin to ground  
reduces undershoot magnitude but increases its  
duration. In the adjustable version, the addition of a  
capacitor, CFB, from the OUT pin to the FB pin will  
also improve the transient response.  
For the TPS73701, reverse current may flow when  
VFB is more than 1.0V above VIN.  
THERMAL PROTECTION  
The TPS737xx does not have active pull-down when  
the output is over-voltage. This architecture allows  
applications that connect higher voltage sources,  
such as alternate power supplies, to the output. This  
architecture also results in an output overshoot of  
several percent if the load current quickly drops to  
zero when a capacitor is connected to the output. The  
duration of overshoot can be reduced by adding a  
load resistor. The overshoot decays at a rate  
determined by output capacitor COUT and the  
internal/external load resistance. The rate of decay is  
given by:  
Thermal protection disables the output when the  
junction temperature rises to approximately +160°C,  
allowing the device to cool. When the junction  
temperature cools to approximately +140°C, the  
output circuitry is again enabled. Depending on power  
dissipation, thermal resistance, and ambient  
temperature, the thermal protection circuit may cycle  
on and off. This cycling limits the dissipation of the  
regulator, protecting it from damage due to  
overheating.  
Any tendency to activate the thermal protection circuit  
indicates excessive power dissipation or an  
inadequate heatsink. For reliable operation, junction  
temperature should be limited to +125°C maximum.  
To estimate the margin of safety in a complete design  
(Fixed voltage version)  
VOUT  
dV  
dT  
+
COUT   80kW ø RLOAD  
(4)  
(5)  
(including  
heatsink),  
increase  
the  
ambient  
temperature until the thermal protection is triggered;  
use worst-case loads and signal conditions. For good  
reliability, thermal protection should trigger at least  
+35°C above the maximum expected ambient  
condition of your application. This produces a worst-  
case junction temperature of +125°C at the highest  
expected ambient temperature and worst-case load.  
(Adjustable voltage version)  
VOUT  
dV  
+
dT  
(
)
COUT   80kW ø R1 ) R2 ø RLOAD  
REVERSE CURRENT  
The NMOS pass element of the TPS737xx provides  
inherent protection against current flow from the  
output of the regulator to the input when the gate of  
the pass device is pulled low. To ensure that all  
charge is removed from the gate of the pass element,  
the EN pin must be driven low before the input  
voltage is removed. If this is not done, the pass  
element may be left on because of stored charge on  
the gate.  
The internal protection circuitry of the TPS737xx has  
been designed to protect against overload conditions.  
It was not intended to replace proper heatsinking.  
Continuously running the TPS737xx into thermal  
shutdown degrades device reliability.  
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POWER DISSIPATION  
Knowing the maximum RθJA, the minimum amount of  
PCB copper area needed for appropriate heatsinking  
can be estimated using Figure 33.  
Knowing the device power dissipation and proper  
sizing of the thermal plane that is connected to the  
tab or pad is critical to avoiding thermal shutdown  
and ensuring reliable operation.  
160  
DCQ  
DRV  
DRB  
140  
Power dissipation of the device depends on input  
voltage and load conditions and can be calculated  
using Equation 6:  
120  
100  
80  
60  
40  
20  
0
ǒ
Ǔ
PD + VIN * VOUT   IOUT  
(6)  
Power dissipation can be minimized and greater  
efficiency can be achieved by using the lowest  
possible input voltage necessary to achieve the  
required output voltage regulation.  
On both SON (DRB) and SON (DRV) packages, the  
primary conduction path for heat is through the  
exposed pad to the printed circuit board (PCB). The  
pad can be connected to ground or be left floating;  
however, it should be attached to an appropriate  
amount of copper PCB area to ensure the device  
does not overheat. On the SOT-223 (DCQ) package,  
the primary conduction path for heat is through the  
tab to the PCB. That tab should be connected to  
ground. The maximum junction-to-ambient thermal  
resistance depends on the maximum ambient  
temperature, maximum device junction temperature,  
and power dissipation of the device and can be  
calculated using Equation 7:  
0
1
2
3
4
5
6
7
8
9
10  
Board Copper Area (in2)  
Note: θJA value at board size of 9in2 (that is, 3in ×  
3in) is a JEDEC standard.  
Figure 33. θJA vs Board Size  
Figure 33 shows the variation of θJA as a function of  
ground plane copper area in the board. It is intended  
only as a guideline to demonstrate the effects of heat  
spreading in the ground plane and should not be  
used to estimate actual thermal performance in real  
application environments.  
O
(
)
)125 C * TA  
NOTE: When the device is mounted on an  
application PCB, it is strongly recommended to use  
ΨJT and ΨJB, as explained in the Estimating Junction  
Temperature section.  
R
+
qJA  
PD  
(7)  
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TPS737xx  
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www.ti.com  
ESTIMATING JUNCTION TEMPERATURE  
35  
30  
25  
20  
15  
10  
5
Using the thermal metrics ΨJT and ΨJB, as shown in  
the Thermal Information table, the junction  
temperature can be estimated with corresponding  
formulas (given in Equation 8). For backwards  
compatibility, an older θJC,Top parameter is listed as  
well.  
DRV  
DCQ  
DRB  
YJB  
DRV  
DCQ  
DRB  
YJT  
YJT: TJ = TT + YJT · PD  
YJB: TJ = TB + YJB · PD  
(8)  
Where PD is the power dissipation shown by  
Equation 6, TT is the temperature at the center-top of  
the IC package, and TB is the PCB temperature  
measured 1mm away from the IC package on the  
PCB surface (as Figure 35 shows).  
0
0
1
2
3
4
5
6
7
8
9
10  
Board Copper Area (in2)  
Figure 34. ΨJT and ΨJB vs Board Size  
NOTE: Both TT and TB can be measured on actual  
application boards using a thermo-gun (an infrared  
thermometer).  
For a more detailed discussion of why TI does not  
recommend using θJC(top) to determine thermal  
characteristics, refer to application report SBVA025,  
Using New Thermal Metrics, available for download  
at www.ti.com. For further information, refer to  
application report SPRA953, IC Package Thermal  
Metrics, also available on the TI website.  
For more information about measuring TT and TB, see  
the application note SBVA025, Using New Thermal  
Metrics, available for download at www.ti.com.  
By looking at Figure 34, the new thermal metrics (ΨJT  
and ΨJB) have very little dependency on board size.  
That is, using ΨJT or ΨJB with Equation 8 is a good  
way to estimate TJ by simply measuring TT or TB,  
regardless of the application board size.  
TB  
X
1mm  
TT on top  
of IC  
TT on top  
of IC  
TB on PCB  
surface  
TB on PCB  
surface  
TT  
X
1mm  
1mm  
See note (1)  
(a) Example DRB (SON) Package Measurement  
(b) Example DRV (SON) Package Measurement  
(c) Example DCQ (SOT-223) Package Measurement  
(1) Power dissipation may limit operating range. Check Thermal Information table.  
Figure 35. Measuring Points for TT and TB  
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SBVS067O JANUARY 2006REVISED JUNE 2012  
REVISION HISTORY  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision N (June 2011) to Revision O  
Page  
Changed Thermal Information table data and footnote 2b ................................................................................................... 3  
Changed VFB Internal reference parameter in Electrical Characteristics table ..................................................................... 4  
Changed title of Figure 8 ...................................................................................................................................................... 7  
Changes from Revision M (October, 2010) to Revision N  
Page  
Added footnote (3) to Thermal Information table .................................................................................................................. 3  
Added footnote to Figure 35 ............................................................................................................................................... 16  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Apr-2013  
PACKAGING INFORMATION  
Orderable Device  
TPS73701DCQ  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
Top-Side Markings  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4)  
ACTIVE  
SOT-223  
SOT-223  
SOT-223  
SOT-223  
SON  
DCQ  
6
6
6
6
8
8
8
8
6
6
6
6
6
6
8
8
6
78  
Green (RoHS  
& no Sb/Br)  
CU SN  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
TPS73701  
TPS73701DCQG4  
TPS73701DCQR  
TPS73701DCQRG4  
TPS73701DRBR  
TPS73701DRBRG4  
TPS73701DRBT  
TPS73701DRBTG4  
TPS73701DRVR  
TPS73701DRVT  
TPS73718DCQ  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
DCQ  
DCQ  
DCQ  
DRB  
DRB  
DRB  
DRB  
DRV  
DRV  
DCQ  
DCQ  
DCQ  
DCQ  
DRB  
DRB  
DCQ  
78  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU SN  
TPS73701  
TPS73701  
TPS73701  
BZN  
2500  
2500  
3000  
3000  
250  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU SN  
Green (RoHS  
& no Sb/Br)  
SON  
Green (RoHS  
& no Sb/Br)  
BZN  
SON  
Green (RoHS  
& no Sb/Br)  
BZN  
SON  
250  
Green (RoHS  
& no Sb/Br)  
BZN  
SON  
3000  
250  
Green (RoHS  
& no Sb/Br)  
QTN  
SON  
Green (RoHS  
& no Sb/Br)  
QTN  
SOT-223  
SOT-223  
SOT-223  
SOT-223  
SON  
78  
Green (RoHS  
& no Sb/Br)  
TPS73718  
TPS73718  
TPS73718  
TPS73718  
RAL  
TPS73718DCQG4  
TPS73718DCQR  
TPS73718DCQRG4  
TPS73718DRBR  
TPS73718DRBT  
TPS73725DCQ  
78  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU SN  
2500  
2500  
3000  
250  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
Green (RoHS  
& no Sb/Br)  
SON  
Green (RoHS  
& no Sb/Br)  
RAL  
SOT-223  
78  
Green (RoHS  
& no Sb/Br)  
TPS73725  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Apr-2013  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Top-Side Markings  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4)  
TPS73725DCQG4  
TPS73725DCQR  
ACTIVE  
SOT-223  
SOT-223  
DCQ  
6
6
TBD  
Call TI  
CU SN  
Call TI  
-40 to 125  
-40 to 125  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
DCQ  
DCQ  
DRB  
DRB  
DCQ  
DCQ  
DCQ  
DCQ  
DRV  
DRV  
DCQ  
DCQ  
2500  
2500  
3000  
250  
Green (RoHS  
& no Sb/Br)  
Level-2-260C-1 YEAR  
TPS73725  
TPS73725DCQRG4  
TPS73730DRBR  
TPS73730DRBT  
TPS73733DCQ  
SOT-223  
SON  
6
8
8
6
6
6
6
6
6
6
6
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU SN  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
TPS73725  
CVT  
Green (RoHS  
& no Sb/Br)  
SON  
Green (RoHS  
& no Sb/Br)  
CVT  
SOT-223  
SOT-223  
SOT-223  
SOT-223  
SON  
78  
Green (RoHS  
& no Sb/Br)  
TPS73733  
TPS73733  
TPS73733  
TPS73733  
SIJ  
TPS73733DCQG4  
TPS73733DCQR  
TPS73733DCQRG4  
TPS73733DRVR  
TPS73733DRVT  
TPS73734DCQ  
78  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU SN  
2500  
2500  
3000  
250  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
Green (RoHS  
& no Sb/Br)  
SON  
Green (RoHS  
& no Sb/Br)  
SIJ  
SOT-223  
SOT-223  
78  
Green (RoHS  
& no Sb/Br)  
OCH  
TPS73734DCQR  
2500  
Green (RoHS  
& no Sb/Br)  
OCH  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Addendum-Page 2  
PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Apr-2013  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4)  
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a  
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF TPS73733 :  
Automotive: TPS73733-Q1  
NOTE: Qualified Version Definitions:  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 3  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
24-Apr-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS73701DCQRG4  
TPS73701DRBR  
TPS73701DRBR  
TPS73701DRBT  
TPS73701DRBT  
TPS73701DRVR  
TPS73701DRVT  
TPS73718DCQRG4  
TPS73718DRBR  
TPS73718DRBT  
TPS73725DCQRG4  
TPS73730DRBR  
TPS73730DRBT  
TPS73733DCQRG4  
TPS73733DRVR  
TPS73733DRVT  
TPS73734DCQR  
SOT-223 DCQ  
6
8
8
8
8
6
6
6
8
8
6
8
8
6
6
6
6
2500  
3000  
3000  
250  
330.0  
330.0  
330.0  
180.0  
180.0  
179.0  
179.0  
330.0  
330.0  
180.0  
330.0  
330.0  
180.0  
330.0  
179.0  
179.0  
330.0  
12.4  
12.4  
12.4  
12.4  
12.4  
8.4  
7.05  
3.3  
3.3  
3.3  
3.3  
2.2  
2.2  
7.05  
3.3  
3.3  
7.05  
3.3  
3.3  
7.05  
2.2  
2.2  
6.8  
7.45  
3.3  
3.3  
3.3  
3.3  
2.2  
2.2  
7.45  
3.3  
3.3  
7.45  
3.3  
3.3  
7.45  
2.2  
2.2  
7.3  
1.88  
1.1  
8.0  
8.0  
8.0  
8.0  
8.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
4.0  
4.0  
8.0  
12.0  
12.0  
12.0  
12.0  
12.0  
8.0  
Q3  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q3  
Q2  
Q2  
Q3  
Q2  
Q2  
Q3  
Q2  
Q2  
Q3  
SON  
SON  
SON  
SON  
SON  
SON  
DRB  
DRB  
DRB  
DRB  
DRV  
DRV  
1.1  
1.1  
250  
1.1  
3000  
250  
1.2  
8.4  
1.2  
8.0  
SOT-223 DCQ  
2500  
3000  
250  
12.4  
12.4  
12.4  
12.4  
12.4  
12.4  
12.4  
8.4  
1.88  
1.1  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
8.0  
SON  
SON  
DRB  
DRB  
1.1  
SOT-223 DCQ  
2500  
3000  
250  
1.88  
1.1  
SON  
SON  
DRB  
DRB  
1.1  
SOT-223 DCQ  
2500  
3000  
250  
1.88  
1.2  
SON  
SON  
DRV  
DRV  
8.4  
1.2  
8.0  
SOT-223 DCQ  
2500  
12.4  
1.88  
12.0  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
24-Apr-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS73701DCQRG4  
TPS73701DRBR  
TPS73701DRBR  
TPS73701DRBT  
TPS73701DRBT  
TPS73701DRVR  
TPS73701DRVT  
TPS73718DCQRG4  
TPS73718DRBR  
TPS73718DRBT  
TPS73725DCQRG4  
TPS73730DRBR  
TPS73730DRBT  
TPS73733DCQRG4  
TPS73733DRVR  
TPS73733DRVT  
TPS73734DCQR  
SOT-223  
SON  
DCQ  
DRB  
DRB  
DRB  
DRB  
DRV  
DRV  
DCQ  
DRB  
DRB  
DCQ  
DRB  
DRB  
DCQ  
DRV  
DRV  
DCQ  
6
8
8
8
8
6
6
6
8
8
6
8
8
6
6
6
6
2500  
3000  
3000  
250  
358.0  
367.0  
552.0  
210.0  
552.0  
195.0  
195.0  
358.0  
367.0  
210.0  
358.0  
367.0  
210.0  
358.0  
195.0  
195.0  
358.0  
335.0  
367.0  
367.0  
185.0  
185.0  
200.0  
200.0  
335.0  
367.0  
185.0  
335.0  
367.0  
185.0  
335.0  
200.0  
200.0  
335.0  
35.0  
35.0  
36.0  
35.0  
36.0  
45.0  
45.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
45.0  
45.0  
35.0  
SON  
SON  
SON  
250  
SON  
3000  
250  
SON  
SOT-223  
SON  
2500  
3000  
250  
SON  
SOT-223  
SON  
2500  
3000  
250  
SON  
SOT-223  
SON  
2500  
3000  
250  
SON  
SOT-223  
2500  
Pack Materials-Page 2  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other  
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest  
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supplied at the time of order acknowledgment.  
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
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TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and  
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