UC1611J [TI]

QUAD SCHOTTKY DIODE ARRAY; QUAD肖特基二极管阵列
UC1611J
型号: UC1611J
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

QUAD SCHOTTKY DIODE ARRAY
QUAD肖特基二极管阵列

整流二极管 肖特基二极管 测试 功效
文件: 总7页 (文件大小:179K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ꢀ ꢁꢂ ꢃꢂꢂ  
ꢀ ꢁꢄ ꢃꢂꢂ  
SLUS338A – JUNE 1993 – REVISED MAY 2001  
FEATURES  
DESCRIPTION  
D
D
D
D
D
D
D
Matched, Four-Diode Monolithic Array  
High Peak Current  
This four-diode array is designed for general  
purpose use as individual diodes or as a  
high-speed, high-current bridge. It is particularly  
useful on the outputs of high-speed power  
MOSFET drivers where Schottky diodes are  
needed to clamp any negative excursions caused  
by ringing on the driven line.These diodes are also  
ideally suited for use as voltage clamps when  
driving inductive loads such as relays and  
solenoids, and to provide a path for current  
free-wheeling in motor drive applications.The use  
of Schottky diode technology features high  
efficiency through lowered forward voltage drop  
and decreased reverse recovery time.This single  
monolithic chip is fabricated in both hermetic  
CERDIP and copper-eaded plastic packages.  
The UC1611 in ceramic is designed for –55°C to  
125°C environments but with reduced peak  
current capability: while the UC3611 in plastic has  
higher current rating over a 0°C to 70°C ambient  
temperature range.  
Low-Cost MINIDIP Package  
Low-Forward Voltage  
Parallelable for Lower V or Higher I  
F
F
Fast Recovery Time  
Military Temperature Range Available  
AVAILABLE OPTIONS  
Packaged Devices  
T
= T  
J
A
SOIC Wide (DW)  
UC1611DW  
DIL (J)  
UC1611J  
UC3611J  
DIL (N)  
UC1611N  
UC3611N  
–55°C to 125°C  
0°C to 70°C  
UC3611DW  
ꢋꢞ  
Copyright 2001, Texas Instruments Incorporated  
ꢚ ꢞ ꢛ ꢚꢓ ꢔꢨ ꢖꢕ ꢙ ꢡꢡ ꢟꢙ ꢗ ꢙ ꢘ ꢞ ꢚ ꢞ ꢗ ꢛ ꢣ  
1
www.ti.com  
ꢀ ꢁꢂꢃ ꢂꢂ  
ꢀ ꢁꢄꢃ ꢂꢂ  
SLUS338A JUNE 1993 REVISED MAY 2001  
DW PACKAGE  
(TOP VIEW)  
J OR N PACKAGE  
(TOP VIEW)  
absolute maximum ratings over operating free-air temperature (unless otherwise noted)  
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V  
Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V  
Peak forward current  
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A  
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A  
Power dissipation at T = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W  
A
Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
stg  
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C  
Stresses beyond those listed under absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditionsis not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
Please consult packaging section of data book for thermal limitations and considerations of package.  
electrical characteristics, all specifications apply to each individual diode, T = 25°C, T = T ,  
J
A
J
(except as noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
0.3  
TYP  
0.4  
MAX UNITS  
I
I
= 100 mA  
= 1 A  
0.7  
1.2  
0.1  
1.0  
V
V
F
Forward voltage drop  
Leakage current  
0.9  
0.01  
0.1  
20  
F
V
V
= 40 V  
= 40 V,  
mA  
mA  
ns  
ns  
pF  
R
T
J
= 100°C  
R
Reverse recovery  
Forward recovery  
Junction capacitance  
0.5 A forward to 0.5 A reverse  
1 A forward to 1.1 V recovery  
40  
V
= 5V  
100  
R
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.  
2
www.ti.com  
ꢀ ꢁꢂ ꢃꢂꢂ  
ꢀ ꢁꢄ ꢃꢂꢂ  
SLUS338A JUNE 1993 REVISED MAY 2001  
APPLICATION INFORMATION  
REVERSE CURRENT  
FORWARD CURRENT  
vs  
vs  
VOLTAGE  
VOLTAGE  
5.0  
1000  
500  
3.0  
2.0  
300  
200  
1.0  
0.5  
T
= 125 °C  
100  
50  
J
0.3  
0.2  
°C  
T
= 55  
°C  
0.1  
J
30  
20  
0.05  
0.03  
0.02  
T
= 25  
J
10  
5
0.01  
T
= 25  
°C  
J
T
= 75 °C  
J
0.005  
3
2
°C  
T
= 125  
0.003  
0.002  
J
0.001  
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
Forward Voltage V  
0
10  
20  
30  
40  
50  
Reverse Voltage V  
Figure 1  
Figure 2  
Figure 3. Clamp Diodes PWMs and Drivers  
3
www.ti.com  
ꢀ ꢁꢂꢃ ꢂꢂ  
ꢀ ꢁꢄꢃ ꢂꢂ  
SLUS338A JUNE 1993 REVISED MAY 2001  
APPLICATION INFORMATION  
Figure 4. Transformer Coupled Drive Circuits  
Figure 5. Linear Regulations  
4
www.ti.com  
PACKAGE OPTION ADDENDUM  
www.ti.com  
5-Sep-2011  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
5962-90538012A  
5962-9053801PA  
5962-9053801V2A  
5962-9053801VPA  
UC1611J  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
LCCC  
CDIP  
LCCC  
CDIP  
CDIP  
CDIP  
LCCC  
SOIC  
FK  
JG  
FK  
JG  
JG  
JG  
FK  
DW  
20  
8
1
1
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Call TI  
Call TI  
Call TI  
Call TI  
20  
8
1
POST-PLATE N / A for Pkg Type  
1
A42  
A42  
A42  
N / A for Pkg Type  
N / A for Pkg Type  
N / A for Pkg Type  
8
1
UC1611J883B  
UC1611L883B  
UC3611DW  
8
1
20  
16  
1
POST-PLATE N / A for Pkg Type  
CU NIPDAU Level-2-260C-1 YEAR  
40  
Green (RoHS  
& no Sb/Br)  
UC3611DWG4  
ACTIVE  
SOIC  
DW  
16  
40  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-2-260C-1 YEAR  
UC3611J  
UC3611N  
ACTIVE  
ACTIVE  
CDIP  
PDIP  
JG  
P
8
8
1
TBD  
A42  
N / A for Pkg Type  
50  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU N / A for Pkg Type  
UC3611NG4  
ACTIVE  
PDIP  
P
8
50  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU N / A for Pkg Type  
UC3611Q  
OBSOLETE  
OBSOLETE  
PLCC  
PLCC  
FN  
FN  
20  
20  
TBD  
TBD  
Call TI  
Call TI  
Call TI  
Call TI  
UC3611QTR  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
5-Sep-2011  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF UC1611, UC1611-SP, UC3611, UC3611M :  
Catalog: UC3611, UC1611, UC3611M, UC3611  
Military: UC1611  
Space: UC1611-SP  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Military - QML certified for Military and Defense Applications  
Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application  
Addendum-Page 2  
IMPORTANT NOTICE  
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