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元器件品牌
2SK210-Y
[TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type; 东芝场效应晶体管硅N沟道结型
元器件型号：
2SK210-Y
生产厂家：
TOSHIBA SEMICONDUCTOR
描述和应用：
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
东芝场效应晶体管硅N沟道结型
晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 放大器
PDF文件：
总6页 (文件大小：329K)
下载文档：
下载PDF数据表文档文件
型号参数：2SK210-Y参数
查看货源
2SK210-YTE85R
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal
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2
TOSHIBA
2SK211
N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)
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367
TOSHIBA
2SK211
Silicon N Channel Junction Type FM Tuner Applications
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182
TOSHIBA
2SK211_07
Silicon N Channel Junction Type FM Tuner Applications
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17
TOSHIBA
2SK2110
MOS Field Effect Transistor
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20
KEXIN
2SK2110
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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146
NEC
2SK2110
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
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TYSEMI
2SK2110
Small Signal Field-Effect Transistor, 1-Element, Silicon, SC-62, POWER MINIMOLD, 3 PIN
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0
NEC
2SK2110
Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
NEC
2SK2111
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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11
TYSEMI
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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119
NEC
2SK2111
MOS Field Effect Transistor
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51
KEXIN
2SK2112
MOS Field Effect Transistor
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156
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54
KEXIN
2SK2112
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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114
NEC
2SK2112
Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed
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19
TYSEMI
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