GT50J122 [TOSHIBA]
Current Resonance Inverter Switching Application; 电流谐振逆变器开关的应用
| 型号： | GT50J122 |
| 厂家： | 
TOSHIBA |
| 描述： | Current Resonance Inverter Switching Application |
| 文件： | 总6页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT50J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
Unit: mm
•
•
•
•
•
Enhancement mode type
High speed : t = 0.16 μs (typ.) (I = 60A)
f
C
Low saturation voltage: V
Fourth-generation IGBT
= 1.9 V (typ.) (I = 60A)
C
CE (sat)
TO-3P(N) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
600
±25
V
V
CES
GES
@ Tc = 100°C
31
Continuous collector
current
I
A
A
C
@ Tc = 25°C
50
Pulsed collector current
I
120
CP
@ Tc = 100°C
@ Tc = 25°C
62
Collector power
dissipation
P
W
C
JEDEC
―
―
156
JEITA
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
stg
−55 to 150
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
Max
0.80
Unit
R
°C/W
th (j-c)
Marking
TOSHIBA
GT50J122
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
GT50J122
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±25 V, V = 0
―
―
3.0
―
―
―
―
―
―
―
―
±500
1.0
6.0
2.5
―
nA
mA
V
GES
GE
CE
CE
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
I
= 600 V, V
= 0
CES
GE
V
I
I
= 60 mA, V
= 5 V
―
GE (OFF)
C
C
CE
V
= 60 A, V
= 15 V
1.9
V
CE (sat)
GE
= 10 V, V = 0, f = 1 MHz
GE
C
V
4800
0.17
0.23
0.16
0.41
pF
ies
CE
t
―
Resistive Load
Rise time
r
V
V
= 300 V, I = 60 A
C
Turn-on time
Switching time
t
―
CC
GG
on
μs
= ±15 V, R = 30 Ω
Fall time
t
f
0.26
―
G
(Note 1)
Turn-off time
t
off
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
90%
10%
0
0
R
G
R
L
I
C
0
90%
90%
V
CC
10%
10%
V
CE
t
d (off)
t
f
t
r
t
t
on
off
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2006-11-01
GT50J122
I
– V
I – V
C CE
C
CE
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Common emitter
Common emitter
Tc = −40°C
Tc = 25°C
15
10
8
15
10
8
20
20
7
7
V
= 6 V
GE
4
V
= 6 V
GE
4
0
1
2
3
5
0
1
2
3
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
I – V
C GE
C
CE
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Common emitter
10
Common emitter
Tc = 125°C
V
= 5 V
CE
20
8
15
7
V
= 6 V
GE
25
−40
Tc = 125°C
0
1
2
3
4
5
0
2
4
6
8
10
Gate-emitter voltage
V
(V)
GE
Collector-emitter voltage
V
(V)
CE
V
– Tc
CE (sat)
3.2
2.4
1.6
0.8
0.0
I
= 120 A
C
80
60
30
10
Common emitter
V
= 15 V
GE
−60
−20
20
60
100
140
Case temperature Tc (°C)
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2006-11-01
GT50J122
V
V
– Q
C – V
CE
CE, GE
G
400
300
200
100
0
20
15
10
5
30000
10000
Common emitter
= 5 Ω
Tc = 25°C
R
L
C
ies
5000
3000
1000
500
300
C
oes
V
= 300 V
CE
100
C
res
Common emitter
= 0
f = 1 MHz
Tc = 25°C
50
30
100
V
GE
200
10
0.0
0
320
1
10
100
1000
0
80
160
240
Collector-emitter voltage
V
(V)
CE
Gate charge
Q
G
(nC)
Switching Time – R
Switching Time – I
G
C
5
3
10
Common emitter
Common emitter
V
= 300 V
5
3
CC
V
= 300 V
= 30 Ω
CC
I
= 60 A
C
R
t
t
G
off
on
V
= ±15 V
GG
V
= ±15 V
GG
1
Tc = 25°C
Tc = 25°C
1
t
r
0.5
0.3
t
f
0.5
0.3
t
off
t
f
0.1
0.1
t
on
0.05
0.03
0.05
0.03
t
r
0.01
0.01
0
10
100
1000
0
10
20
30
40
50
60
70
Gate resistance
R
G
(Ω)
Collector current
I
C
(A)
Safe Operating Area
Reverse Bias SOA
1000
3000
1000
*: Single non-repetitive
pulse Tc = 25°C
T ≤ 125°C
j
I
max
C
(continuous)
V
= 20 V
= 10 Ω
GG
Curves must be derated
linearly with increases in
temperature.
300
100
R
G
500
300
I
max (pulsed) *
C
100
10 μs*
30
10
50
30
100 μs*
10 ms*
10
1 ms*
5
3
3
1
DC operation
10
1
1
1
100
1000
CE
10000
10
100
1000
10000
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
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2006-11-01
GT50J122
I max – Tc
C
r
– t
th (t)
w
60
50
40
30
20
10
0
102
101
100
Tc = 25°C
Common
emitter
V
= 15 V
GE
1
10−
2
10−
3
10−
100
101
102
5
4
3
2
1
25
50
75
100
125
150
10−
10−
10−
10−
10−
Case temperature Tc (°C)
Pulse width
t
(s)
w
5
2006-11-01
GT50J122
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-01
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