GT50J123 [TOSHIBA]

Insulated Gate Bipolar Transistor;


型号：	GT50J123
厂家：	TOSHIBA
描述：	Insulated Gate Bipolar Transistor 栅
文件：	总10页 (文件大小：214K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GT50J123

Discrete IGBTs Silicon N-Channel IGBT

GT50J123

1. Applications

•

Hard Switching

High-Speed Switching

Power Factor Correction (PFC)

2. Features

(1) Sixth generation

(2) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 50 A, Ta = 25 )

(3) High junction temperature: Tj = 175 (max)

3. Packaging and Internal Circuit

1: Gate

2: Collector (heatsink)

3: Emitter

TO-3P(N)

Start of commercial production

2018-10

2018-11-15

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

GT50J123

4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

Collector current (DC)

Collector current (1 ms)

VCES

VGES

600

±25

(Tc = 25)

(Tc = 100)

ICP

120

Short circuit withstand time

Collector power dissipation

Junction temperature

Storage temperature

Mounting torque

(Note 1)

(Note 2)

tsc

µs



(Tc = 25)

230

175

Tstg

TOR

-55 to 175

0.8

Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher

temperature.

In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads

to thermorunaway and results in destruction.

Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.

Note 1: VCC = 300 V, VGG = +15 V/0 V, RG = 24 Ω, Tj ≤ 150

Note 2: Ensure that the junction temperature does not exceed 175 .

5. Thermal Characteristics

Characteristics

Junction-to-case thermal resistance

Symbol

Max

0.65

Unit

Rth(j-c)

/W

6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25, unless otherwise specified)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGES

ICES

VGE = ±25 V, VCE = 0 V



±100

100

6.5

µA

Collector cut-off current

VCE = 600 V, VGE = 0 V

Gate-emitter cut-off voltage

VGE(OFF) IC = 3 mA, VCE = 5 V

4.5



5.5

1.9

2.5

Collector-emitter saturation voltage

VCE(sat) IC = 50 A, VGE = 15 V, Tc = 25

VCE(sat) IC = 50 A, VGE = 15 V, Tc = 150

2.5



Toshiba Electronic Devices & Storage Corporation

2018-11-15

Rev.1.0

GT50J123

6.2. Dynamic Characteristics (Ta = 25, unless otherwise specified)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Input capacitance

Cies

VCE = 10 V, VGE = 0 V, f = 100 kHz



2900

0.08

0.06

0.2



Switching time (turn-on delay time)

Switching time (rise time)

td(on) Inductive load

µs

VCC = 300 V, IC = 30 A,

VGG = +15 V/0 V, RG = 24 Ω

Tc = 25,

ton

Switching time (turn-on time)

See Fig. 6.2.1, 6.2.2, 6.2.3

Switching time (turn-off delay time)

Switching time (fall time)

td(off)

0.28

0.04

0.38

0.8

Switching time (turn-off time)

toff

Switching loss (turn-on switching loss)

Switching loss (turn-off switching loss)

Switching time (turn-on delay time)

Switching time (rise time)

Eon

Eoff

0.6

td(on) Inductive load

0.08

0.25

0.3

µs

VCC = 300 V, IC = 30 A,

VGG = +15 V/0 V, RG = 24 Ω

Tc = 150,

ton

Switching time (turn-on time)

See Fig. 6.2.1, 6.2.2, 6.2.3

Switching time (turn-off delay time)

Switching time (fall time)

td(off)

0.06

0.4

Switching time (turn-off time)

toff

Switching loss (turn-on switching loss)

Switching loss (turn-off switching loss)

Eon

Eoff

1.2

0.8

Fig. 6.2.1 Test Circuit of Switching Time

Fig. 6.2.2 Timing Chart of Switching Time

Fig. 6.2.3 Timing Chart of Switching Loss

Toshiba Electronic Devices & Storage Corporation

2018-11-15

Rev.1.0

GT50J123

7. Marking (Note)

Fig. 7.1 Marking

Note: A line under a Lot No. identifies the indication of product Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

Toshiba Electronic Devices & Storage Corporation

2018-11-15

Rev.1.0

GT50J123

8. Characteristics Curves (Note)

Fig. 8.1 IC - VCE

Fig. 8.3 IC - VCE

Fig. 8.5 VCE - VGE

Fig. 8.2 IC - VCE

Fig. 8.4 IC - VCE

Fig. 8.6 VCE - VGE

2018-11-15

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

GT50J123

Fig. 8.7 VCE - VGE

Fig. 8.9 VCE(sat) - Tc

Fig. 8.11 ton, tr, td(on) - IC

Fig. 8.8 VCE - VGE

Fig. 8.10 ton, tr, td(on) - RG

Fig. 8.12 toff, tf, td(off) - RG

Toshiba Electronic Devices & Storage Corporation

2018-11-15

Rev.1.0

GT50J123

Fig. 8.13 toff, tf, td(off) - IC

Fig. 8.14 Eon, Eoff - RG

Fig. 8.15 Eon, Eoff - IC

Fig. 8.16 VCE, VGE - Qg

Fig. 8.17 Safe Operating Area

(Guaranteed Maximum)

Fig. 8.18 Reverse Bias SOA

(Guaranteed Maximum)

Toshiba Electronic Devices & Storage Corporation

2018-11-15

Rev.1.0

GT50J123

Fig. 8.19 rth(j-c) - tw

(Guaranteed Maximum)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

Toshiba Electronic Devices & Storage Corporation

2018-11-15

Rev.1.0

GT50J123

Package Dimensions

Unit: mm

Weight: 4.6 g (typ.)

Package Name(s)

TOSHIBA: 2-16C1S

Nickname: TO-3P(N)

Toshiba Electronic Devices & Storage Corporation

2018-11-15

Rev.1.0

GT50J123

RESTRICTIONS ON PRODUCT USE

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Hardware, software and systems described in this document are collectively referred to as "Product".

•

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written permission, reproduction is permissible only if reproduction is without alteration/omission.

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minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage

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the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.

TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

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PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY

CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT

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For details, please contact your TOSHIBA sales representative or contact us via our website.

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applicable laws or regulations.

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(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and

regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration

Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all

applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

https://toshiba.semicon-storage.com/

2018-11-15

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

GT50J123 [TOSHIBA]

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