MG400Q2YS60A [TOSHIBA]
TOSHIBA IGBT Module Silicon N Channel IGBT; 东芝IGBT模块的硅N沟道IGBT
| 型号： | MG400Q2YS60A |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA IGBT Module Silicon N Channel IGBT |
| 文件： | 总9页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MG400Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q2YS60A
High Power Switching Applications
Motor Control Applications
·
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
The electrodes are isolated from case.
Low thermal resistance.
·
·
·
V
= 2.4 V (typ.)
CE (sat)
Equivalent Circuit
Ｃ1
5
6
7
F
F
O
E1/C2
4
OT
1
2
3
O
E2
Signal terminal
1.
5.
G (L)
G (H)
2.
6.
F
(L)
3.
7.
E (L)
E (H)
4.
8.
V
D
O
F
(H)
Open
O
1
2002-09-06
MG400Q2YS60A
Package Dimensions: 2-123C1B
1.
5.
G (L)
G (H)
2.
6.
F
(L)
3.
7.
E (L)
E (H)
4.
8.
V
D
O
F
O
(H)
Open
Signal Terminal Layout
1.
G (L)
(L)
2.
3.
4.
5.
6.
7.
8.
F
O
7
5
8
6
E (L)
V
D
G (H)
(H)
F
O
3
1
4
2
E (H)
Open
2.54
Weight: 375 g
2
2002-09-06
MG400Q2YS60A
Maximum Ratings (Ta = 25°C)
Stage
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
1200
V
V
CES
±20
GES
DC
1 ms
DC
I
400
C
Collector current
Forward current
A
A
Inverter
I
800
400
CP
I
F
1 ms
I
800
FM
Collector power dissipation (Tc = 25°C)
Control voltage (OT)
P
3750
W
V
C
D
V
20
Control
Module
Fault input voltage
VF
20
V
O
Fault input current
IF
20
mA
°C
°C
°C
V
O
Junction temperature
Storage temperature range
Operation temperature range
Isolation voltage
T
150
j
T
-40~125
-20~100
2500 (AC 1 min)
3 (M5)
stg
T
ope
V
isol
Screw torque
¾
N･m
Electrical Characteristics (T = 25°C)
j
1. Inverter stage
Characteristics
Symbol
Test Condition
= ±20 V, V = 0
Min
Typ.
Max
Unit
V
V
V
V
¾
¾
¾
¾
+3/-4
100
1.0
mA
nA
mA
V
GE
GE
CE
CE
CE
Gate leakage current
I
I
GES
= +10 V, V = 0
CE
Collector cut-off current
= 1200 V, V
= 0
¾
¾
CES
GE
Gate-emitter cut-off voltage
V
= 5 V, I = 400 mA
6.0
¾
7.0
2.4
¾
8.0
GE (off)
C
Tj = 25°C
2.8
V
= 15 V,
GE
Collector-emitter saturation voltage
V
V
CE (sat)
I
= 400 A
C
Tj = 125°C
¾
3.2
Input capacitance
Turn-on delay time
C
V
= 10 V, V = 0, f = 1 MHz
GE
¾
31000
¾
¾
pF
ies
CE
t
0.10
¾
1.00
2.00
0.50
0.50
2.8
d (on)
V
V
= 600 V, I = 400 A
C
CC
GE
Switching time
Turn-off time
Fall time
t
¾
off
= ±15 V, R = 5.1 W
G
ms
(Note 1)
t
¾
¾
f
(See page 4)
Reverse recovery time
Forward voltage
t
¾
¾
rr
V
I
= 400 A
F
¾
2.4
V
F
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25°C)
Characteristics
Fault output current
Symbol
Test Condition
Min
Typ.
Max
Unit
OC
OT
V
V
= 15 V
480
100
¾
¾
¾
¾
¾
125
8
A
GE
CC
Over temperature
¾
°C
ms
Fault output delay time
t
= 600 V, V
= ±15 V
GE
d (Fo)
3
2002-09-06
MG400Q2YS60A
3. Module (Tc = 25°C)
Characteristics
Symbol
Test Condition
Inverter IGBT stage
Min
Typ.
Max
Unit
¾
¾
¾
¾
¾
0.033
0.068
¾
Junction to case thermal resistance
Case to fin thermal resistance
R
R
°C/W
°C/W
th (j-c)
Inverter FRD stage
With silicon compound
0.013
th (c-f)
Switching Time Test Circuit
R
G
I
F
-V
GE
V
CC
L
I
C
R
G
Timing Chart
90%
V
GE
10%
90% I
rr
I
rr
20% I
rr
90%
I
C
t
rr
10%
10%
t
t
d (off)
d (on)
t
f
4
2002-09-06
MG400Q2YS60A
Remark
<Short circuit capability condition >
l Short circuit capability is 6 ms after fault output signal.
Please keep following condition to use fault output signal.
<
·
·
·
·
V
750 V
CC
<
<
14.8 V
V
17.0 V
GE
>
R
G
5.1 W
<
T
j
125°C
<Gate voltage >
l To use this product, V
must be provided higher than 14.8 V
is less than 14.8 V, fault signal F may not be output even under error conditions.
GE
In case V
GE
O
<For parallel use>
l For parallel use of this product, please use the same rank for both V
and VF among IGBT in
CE (sat)
parallel without fail.
V
V
Min
Max
CE (sat)
F
24
26
28
E
2.1
2.3
2.5
2.4
2.6
2.8
F
G
5
2002-09-06
MG400Q2YS60A
I
– V
I – V
C CE
C
CE
800
600
400
200
0
800
600
400
200
0
Common emitter
T = 125°C
15 V
Common emitter
T = 25°C
12 V
j
j
V
GE
= 20 V
V
= 20 V
12 V
GE
15 V
10 V
10 V
9 V
8 V
9 V
8 V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
V
– V
V
– V
GE
CE
GE
CE
12
10
8
12
10
8
Common emitter
T = 25°C
Common emitter
T = 125°C
j
j
6
6
I
= 800 A
C
4
4
I
= 800 A
C
400 A
400 A
2
2
200 A
200 A
0
0
0
0
5
10
15
(V)
20
5
10
15
20
Gate-emitter voltage
V
Gate-emitter voltage
V
(V)
GE
GE
V
– V
I – V
C GE
CE
GE
12
10
8
800
600
400
200
0
Common emitter
T = -40°C
Common emitter
= 5 V
j
V
CE
6
25°C
I
= 800 A
C
4
400 A
200 A
T = 125°C
j
2
-40°C
0
0
5
10
15
(V)
20
0
4
8
12
Gate-emitter voltage
V
Gate-emitter voltage
V
(V)
GE
GE
6
2002-09-06
MG400Q2YS60A
I
– V
V
, V
CE GE
– Q
F
F
G
800
600
400
200
0
1000
800
600
400
200
0
20
16
12
8
Common emitter
= 1.5 W
Common cathode
= 0 V
R
L
V
GE
T = 25°C
j
400 V
600 V
200 V
T = 125°C
j
V
CC
= 0 V
-40°C
25°C
4
0
0
1
2
3
4
5
0
1000
Charge
2000
(nC)
3000
Forward voltage
V
(V)
Q
G
F
SW time – R
E , E – R
on off
G
G
10000
1000
100
1000
100
10
Common emitter
V
CC
= 600 V
I
= 400 A
T = 25°C
j
C
t
off
V
GE
= ±15 V
T = 125°C
j
t
d (off)
t
on
E
off
t
d (on)
t
r
t
E
on
f
Common emitter
V
CC
= 600 V
I
= 400 A
T = 25°C
j
T = 125°C
j
C
V
GE
= ±15 V
10
0
5
10
15
(9)
20
0
5
10
15
(9)
20
Gate resistance
R
Gate resistance
R
G
G
SW time – I
E , E – I
on off C
C
10000
1000
100
100
10
1
t
off
t
d (off)
E
off
t
f
t
on
E
on
t
d (on)
Common emitter
Common emitter
V
= 600 V
= 5.1 W
CC
t
r
V
= 600 V
= 5.1 W
CC
R
T = 25°C
j
G
R
T = 25°C
j
T = 125°C
j
G
V
GE
= ±15 V
T = 125°C
j
V
GE
= ±15 V
10
0
100
200
300
(A)
400
0
100
200
300
(A)
400
Collector current
I
C
Collector current
I
C
7
2002-09-06
MG400Q2YS60A
I , t – I
rr rr
E
– I
dsw F
F
1000
100
10
100
10
1
Common cathode
V
= 600 V
= 5.1 W
CC
R
T = 25°C
j
G
V
GE
= ±15 V
T = 125°C
j
t
rr
I
rr
Common cathode
V
= 600 V
= 5.1 W
CC
R
T = 25°C
j
G
V
GE
= ±15 V
T = 125°C
j
0
100
200
300
(A)
400
0
100
200
300
400
Forward current
I
Forward current
I
F
(A)
F
C – V
Safe-operating area
CE
100000
10000
1000
1000
100
10
I
max (pulsed)*
C
C
ies
I
max
C
50 ms*
(continuous)
100 ms*
C
oes
*:Single
nonrepetitive
pulse Tc = 25°C
Curves must be
derated linearly
with increase in
temperature.
1 ms*
Common emitter
= 0 V
C
res
V
GE
f = 1 MHz
T = 25°C
j
100
0.01
1
1
0.1
1
10
100
10
100
1000
10000
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
Reverse bias SOA
R
– t
w
800
600
400
200
0
th
1
0.1
T
= 25°C
C
Diode stage
Transistor stage
0.01
<
T
125°C
=
j
R
= 5.1 W
G
V
= ±15 V
GE
0.001
0.001
0
400
800
1200
(V)
0.01
0.1
Pulse width
1
10
Collector-emitter voltage
V
t
w
(s)
CE
8
2002-09-06
MG400Q2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
9
2002-09-06
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