MT3S04S [TOSHIBA]
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;
| 型号： | MT3S04S |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal 放大器 |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT3S04AFS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S04AFS
Unit: mm
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
•
•
Superior performance in oscillator applications
Superior noise characteristics
1
3
: NF = 1.3 dB, |S |2 = 9.5 dB (f = 1 GHz)
0.8±0.05
1.0±0.05
2
21e
0.1±0.05
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
1.Base
2.Emitter
3.Collector
Characteristic
Symbol
Rating
Unit
fSM
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
V
V
V
10
V
V
CBO
CEO
EBO
5
2
JEDEC
―
―
V
JEITA
I
40
mA
mW
mW
°C
°C
C
Toshiba
2-1E1A
Base current
I
10
B
Weight: 0.0006 g (typ.)
Collector power dissipation
Junction temperature
Storage temperature range
P (Note 1)
C
85
T
j
125
−55~125
T
stg
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
2
1
3
0 1
1
2007-11-01
MT3S04AFS
Microwave Characteristics (Ta = 25°C)
Characteristic
Transition frequency
Symbol
Condition
Min
Typ.
Max
Unit
f
V
V
V
V
= 3 V, I = 7 mA
5
⎯
7
⎯
⎯
GHz
T
CE
CE
CE
CE
C
⎪S ⎪2 (1)
= 1 V, I = 5 mA, f = 1 GHz
9.5
13
1.3
21e
C
Insertion gain
Noise figure
dB
dB
⎪S ⎪2 (2)
= 3 V, I = 20 mA, f = 1 GHz
10.5
⎯
⎯
21e
C
NF (1)
= 1 V, I = 5 mA, f = 1 GHz
2.2
C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
Emitter cutoff current
DC current gain
I
V
V
V
V
= 5 V, I = 0
⎯
⎯
80
⎯
⎯
⎯
0.1
1
μA
μA
CBO
CB
EB
CE
CB
E
I
= 1 V, I = 0
C
EBO
h
= 1 V, I = 5 mA
⎯
160
1.05
FE
C
Reverse transfer capacitance
C
= 1 V, I = 0, f = 1 MHz(Note)
0.8
pF
re
E
Note: C is measured with a three-terminal method using a capacitance bridge.
re
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
MT3S04AFS
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3
2007-11-01
相关型号：
©2020 ICPDF网 联系我们和版权申明