MT3S05T [TOSHIBA]
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE; 晶体管NPN硅外延平面型
| 型号： | MT3S05T |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT3S05T
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S05T
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
·
·
Sutable for use in an OSC
Low noise figure
NF = 1.4dB
·
Excellent collector current linearity
|S21e|2 = 8.5dB (@1 V/5 mA/1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
10
5
V
V
CBO
CEO
EBO
2
V
I
40
mA
mA
mW
°C
°C
C
Base current
I
10
B
Collector power dissipation
Junction temperature
Storage temperature range
P
100
125
-55~125
C
Tj
Tstg
JEDEC
―
―
JEITA
TOSHIBA
Weight: g (typ.)
2-1B1A
Marking
3
1
2
1
2002-01-23
MT3S05T
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Symbol
Test Condition
= 1 V, I = 5 mA
Min
Typ.
Max
Unit
f
V
V
V
V
2
4.5
8.5
¾
¾
GHz
T
CE
CE
CE
CE
C
2
|S21e| (1)
= 1 V, I = 5 mA, f = 1 GHz
¾
8.5
¾
C
Insertion gain
Noise figure
dB
dB
2
|S21e| (2)
= 3 V, I = 20 mA, f = 1 GHz
11.5
1.4
¾
C
NF
= 1 V, I = 5 mA, f = 1 GHz
2.2
C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
V
V
= 5 V, I = 0
¾
¾
80
¾
¾
¾
0.1
1
mA
mA
¾
CBO
CB
EB
CE
CB
E
Emitter cut-off current
DC current gain
I
= 1 V, I = 0
C
EBO
h
FE
= 1 V, I = 5 mA
140
C
= 1 V, I = 0, f = 1 MHz
E
Reverse transfer capacitance
C
re
¾
0.9
1.25
pF
(Note)
Note: C is measured by 3 terminal method with capacitance bridge.
re
Caution
This device electrostatic sensitivity. Please handle with caution.
2
2002-01-23
MT3S05T
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3
2002-01-23
相关型号：
©2020 ICPDF网 联系我们和版权申明