SSM6G18NU(TE85L) [TOSHIBA]
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),LLCC;
| 型号： | SSM6G18NU(TE85L) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),LLCC |
| 文件： | 总8页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6G18NU
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM6G18NU
Power Management Switch Applications
•
Combined a P-channel MOSFET and a schottky barrier diode in one
package.
Unit: mm
•
Low R
and Low V
F
DS (ON)
±
2.0 0.1
B
A
R
R
R
R
= 261 mΩ (max) (@V
= 185 mΩ (max) (@V
= 143 mΩ (max) (@V
= -1.5V)
= -1.8 V)
= -2.5 V)
= -4.5 V)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
= 112 mΩ (max) (@V
Absolute Maximum Ratings
MOSFET Ta = 25°C
～
0
0.05
(
)
0.13
Characteristics
Drain-Source voltage
Symbol
Rating
−20
±8
Unit
V
*BOTTOM VIEW
0.65
0.65
0.95
2
V
V
DSS
1
3
Gate-Source voltage
V
GSS
DC
I
(Note 1)
(Note 1)
−2.0
−4.0
1
D
Drain current
A
Pulse
I
DP
P (Note 2)
D
Power dissipation
W
6
5
4
0.3
±
0.075
t ＜10s
2
M
0.05
A
B
0.65 0.075
±
M
±
0.65 0.075
0.05
A
B
Channel temperature
T
ch
150
°C
1. Anode
2. NC
4. Source
5. Gate
Schottky Barrier Diode(Ta = 25°C)
3. Drain
6. Cathode
Characteristics
Reverse voltage
Symbol
Rating
30
Unit
V
UDFN6
V
R
JEDEC
―
Average forward current
I
1.0
A
O
JEITA
―
Peak one cycle surge forward
current(10ms)
I
5.0
A
FSM
TOSHIBA
2-2Y1A
Junction temperature
T
j
150
°C
Weight: 8.5 mg (typ.)
MOSFET and Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Storage temperature range
T
stg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645mm2)
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2010-09-30
SSM6G18NU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= -1 mA, V
= -1 mA, V
= 0 V
= 5 V
-20
-15
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
(Note 4)
Drain cut-off current
I
V
V
V
V
= -20 V, V
= ± 8 V, V
= 0 V
⎯
-1
μA
μA
V
DSS
DS
GS
DS
DS
GS
DS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= 0 V
⎯
⎯
±1
GSS
V
= -3 V, I = -1 mA
-0.3
2.7
⎯
⎯
-1.0
⎯
th
D
⏐Y ⏐
= -3 V, I = -1.0 A
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
5.4
89
S
fs
D
I
I
I
I
= -1.0 A, V
= -4.5 V
= -2.5 V
= -1.8 V
= -1.5 V
112
143
185
261
⎯
D
D
D
D
GS
GS
= -0.6A, V
⎯
107
128
148
270
40
Drain–source ON-resistance
R
mΩ
DS (ON)
= -0.4 A, V
= -0.2 A, V
⎯
GS
GS
⎯
Input capacitance
C
C
⎯
iss
Output capacitance
Reverse transfer capacitance
Total Gate Charge
V
= -10 V, V
= 0 V, f = 1 MHz
GS
pF
nC
⎯
⎯
DS
oss
C
rss
⎯
32
⎯
Q
g
⎯
4.6
0.4
0.9
17
⎯
V
V
= −10 V, I = −2.0 A
DD
GS
D
Gate-Source Charge
Gate-Drain Charge
Q
gs1
⎯
⎯
= −4.5 V
Q
gd
⎯
⎯
Turn-on time
Switching time
t
on
t
off
V
V
= -10 V, I = -1.0 A
⎯
⎯
DD
GS
D
ns
V
Turn-off time
= 0 to -2.5 V, R = 4.7 Ω
⎯
43
⎯
G
V
Drain-Source forward voltage
I
= 2.0 A, V
= 0 V
GS
(Note 3)
⎯
0.86
1.2
DSF
D
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode.
Note that the drain-source breakdown voltage is lowered in this mode
Switching Time Test Circuit
(b) V
IN
(a) Test circuit
0 V
90%
V
= −10 V
= 4.7 Ω
DD
0
OUT
R
10%
G
IN
<
−2.5 V
Duty 1%
−2.5 V
V
: t , t < 5 ns
IN
r
f
V
DS (ON)
Common source
90%
10%
10 μs
(c) V
Ta = 25°C
OUT
V
DD
V
DD
t
t
f
r
t
t
off
on
Precaution
V
can be expressed as voltage between gate and source when low operating current value is ID = -1mA for this
th
product. For normal switching operation, V
requires higher voltage than V and V
requires lower
GS (on)
th
GS (off)
voltage than V .
th
(Relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration for using the device.
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2010-09-30
SSM6G18NU
Schottky Barrier Diode
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
= 100 mA
Min
Typ.
Max
Unit
V
⎯
⎯
⎯
V
V
V
V
I
I
I
I
0.31
0.36
0.38
0.48
5
⎯
⎯
F (1)
F (2)
F (3)
F (4)
F
F
F
F
= 200 mA
= 500 mA
= 1000 mA
Forward voltage
0.45
0.58
50
Reverse current
I
V
V
= 30 V
⎯
⎯
μA
R
R
R
Total capacitance
C
T
= 0 V, f = 1 MHz
120
⎯
pF
Precaution
The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus,
excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both
forward and reverse loss into consideration.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R
and power dissipation P vary depending on board material, board area, board thickness
th (ch-a)
D
and pad area. When using this device, please take heat dissipation into consideration
Marking(Top View)
Equivalent Circuit(Top View)
Pin Condition(Top View)
6
5
4
C
G
S
6
5
4
D
KE2
C
2
3
NC
D
1
A
2
3
1
Polarity marking
Polarity marking (on the top)
*Electrodes : on the bottom
3
2010-09-30
SSM6G18NU
・MOSFET
I
– V
DS
I
– V
GS
D
D
-5
-4
-10
-1
Common Source
= -3 V
V
DS
-4.5 V
-2.5 V -1.8 V
V
= -1.5 V
GS
Pulse test
Ta = 100 °C
-3
-2
-0.1
-0.01
25 °C
-25 °C
-1
-0.001
Common Source
Ta = 25 °C
Pulse test
0
0
-0.0001
-1.0
-0.2
-0.4
-0.6
-0.8
-1
0
-2.0
Drain–source voltage
V
(V)
DS
Gate–source voltage
V
(V)
GS
R
– I
D
R
– V
GS
DS (ON)
DS (ON)
400
400
300
200
I
= -1.0 A
Common Source
Ta = 25°C
D
Common Source
Pulse test
Pulse test
300
200
-1.5 V
-1.8 V
25 °C
-2.5 V
Ta = 100 °C
-25 °C
100
0
100
V
= -4.5 V
GS
0
0
-2
-4
-6
-8
0
-1.0
-2.0
-3.0
-4.0
Gate–source voltage
V
(V)
GS
Drain current
I
(A)
D
V
– Ta
th
R
– Ta
DS (ON)
400
-1.0
Common Source
Pulse test
Common Source
= -3 V
V
DS
= -1 mA
I
D
300
200
100
0
-0.4 A / -1.8 V
-0.6 A / -2.5 V
-0.2 A / -1.5 V
-0.5
I
= -1.0 A / V
= -4.5 V
100
D
GS
0
−50
0
50
100
150
−50
0
50
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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2010-09-30
SSM6G18NU
I
– V
DS
DR
|Y | – I
fs
D
10
1
10
Common Source
= 0 V
Common Source
= -3 V
V
DS
V
GS
Ta = 25°C
Pulse test
D
Pulse test
3
1
I
G
DR
-25 °C
S
0.1
Ta =100 °C
25 °C
0.3
0.1
0.01
0.001
-1
-0.1
-10
0
0.5
1.0
1.5
-0.01
Drain current
I
(A)
Drain–source voltage
V
(V)
D
DS
C – V
t – I
D
DS
1000
10000
1000
100
Common Source
V
V
= -10 V
= 0 to -2.5 V
DD
GS
t
off
Ta = 25 °C
R
G
= 4.7Ω
300
100
C
iss
t
f
t
on
C
C
oss
10
1
30
10
Common Source
Ta = 25 °C
rss
f = 1 MHz
t
r
V
= 0 V
GS
-0.1
-1
-10
-100
-0.001
-0.01
-0.1
-1
-10
Drain-source voltage
V
(V)
DS
Drain current
I
(A)
D
Dynamic Input Characteristic
-8
-6
-4
-2
0
Common Source
= -2.0 A
Ta = 25°C
I
D
V
= - 10 V
DD
V
= - 16 V
DD
0
2
4
6
8
10
Total Gate Charge Qg (nC)
5
2010-09-30
SSM6G18NU
r
th
– t
w
P
– Ta
D
1400
1200
1000
800
1000
100
a: Mounted on FR4 board
b
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.13mm2
)
a
a
600
400
10
b
Single pulse
a. Mounted on F4 board
200
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.13 mm2)
1
0.001
0
1
10
100
1000
-40 -20
0
20 40
60 80 100 120 140 160
0.01
0.1
Pulse width tw (s)
Ambient temperature Ta (°C)
6
2010-09-30
SSM6G18NU
Schottky Barrier Diode
IF -VF
IR -VR
1000
100
10
1000
100
10
Ta=75℃
50℃
Ta=75℃
50℃
25℃
0℃
1
0.1
25℃
-25℃
0.01
0.001
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
REVERSE VOLTAGE V (V)
R
FORWARD VOLTAGE V (V)
F
CT - VR
1000
100
10
f=1MHz
Ta=25℃
1
0
5
10
15
20
25
30
REVERSE VOLTAGE V (V)
R
7
2010-09-30
SSM6G18NU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2010-09-30
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