TIM1213-30L [TOSHIBA]
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA03A, 2 PIN, FET RF Power;
| 型号： | TIM1213-30L |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA03A, 2 PIN, FET RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总2页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1213-30L
TECHNICAL DATA
FEATURES
HIGH POWER
P1dB=45.0dBm at 12.7GHz to 13.2GHz
HIGH GAIN
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
G1dB=5.5dB at 12.7GHz to 13.2GHz
LOW INTERMODULATION DISTORTION
IM3=−28dBc at Po=38.0dBm Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 44.0 45.0
⎯
G1dB
VDS
= 10V
dB
4.5
5.5
⎯
IDSset≅7.0A
f = 12.7 to 13.2GHz
IDS1
∆G
A
dB
%
10.0 11.0
⎯
⎯
⎯
23
Gain Flatness
±0.8
⎯
Power Added Efficiency
3rd Order Intermodulation
Distortion
ηadd
IM3
⎯
Two-Tone Test
Po= 38.0dBm
dBc
-25
-28
⎯
(Single Carrier Level)
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
Drain Current
IDS2
A
9.0
10.1
100
⎯
⎯
C
°
Channel Temperature Rise
ΔTch
⎯
Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
IDS= 9.6A
VGSoff VDS= 3V
IDS= 290mA
VDS= 3V
UNIT MIN. TYP. MAX.
Transconductance
gm
S
5.5
-2.0
20.0
⎯
⎯
-0.7
⎯
⎯
-4.5
⎯
Pinch-off Voltage
V
Saturated Drain Current
IDSS
A
VGS= 0V
IGS= -290 A
Gate-Source Breakdown
Voltage
VGSO
V
-5
μ
⎯
C/W
°
Thermal Resistance
Rth(c-c) Channel to Case
1.0
1.1
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Dec. 2010
TIM1213-30L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
20
Total Power Dissipation (Tc= 25 C)
PT
W
136
°
C
Channel Temperature
Storage
Tch
175
°
C
°
Tstg
-65 to +175
PACKAGE OUTLINE (7-AA03A)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
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