TK8A50D(STA4,Q,M) [TOSHIBA]
MOSFET N-CH 500V 8A SC-67;
| 型号： | TK8A50D(STA4,Q,M) |
| 厂家： | 
TOSHIBA |
| 描述： | MOSFET N-CH 500V 8A SC-67 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TK8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK8A50D
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 0.7 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 4.0 S (typ.)
fs
Low leakage current: I
= 10 μA (max) (V
= 500 V)
DSS
DS
Enhancement mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
V
500
±30
8
V
V
DSS
Gate-source voltage
GSS
DC
(Note 1)
I
D
1: Gate
2: Drain
3: Source
Drain current
A
Pulse (t = 1 ms)
I
32
40
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
Single pulse avalanche energy
E
165
mJ
(Note 2)
JEDEC
JEITA
―
Avalanche current
I
8
4.0
A
SC-67
2-10U1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
T
150
ch
Weight : 1.7 g (typ.)
Storage temperature range
T
-55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
3.125
62.5
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: = 90 V, T = 25°C (initial), L = 4.4 mH, R = 25 Ω, I = 8 A
V
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
Start of commercial production
2008-07
1
2013-11-01
TK8A50D
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±30 V, V
= 500 V, V
= 0 V
= 0 V
⎯
⎯
⎯
⎯
±1
10
μA
μA
V
GSS
GS
DS
DS
Drain cut-off current
I
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
500
2.0
⎯
⎯
⎯
D
GS
V
V
V
V
= 10 V, I = 1 mA
⎯
4.0
0.85
⎯
V
th
DS
GS
DS
D
R
= 10 V, I = 4 A
0.7
4.0
800
4
Ω
DS (ON)
⎪Y ⎪
D
= 10 V, I = 4 A
1.0
⎯
S
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
100
⎯
oss
10 V
GS
0 V
I
= 4 A
V
OUT
Rise time
t
r
⎯
⎯
⎯
⎯
20
40
12
60
⎯
⎯
⎯
⎯
D
V
Turn-on time
Switching time
t
on
R
L
= 50 Ω
50 Ω
ns
Fall time
t
f
V
≈ 200 V
DD
Turn-off time
t
off
Duty ≤ 1%, t = 10 μs
w
16
10
6
Total gate charge
Gate-source charge
Gate-drain charge
Q
⎯
⎯
⎯
⎯
⎯
⎯
g
V
≈ 400 V, V
= 10 V, I = 8 A
nC
Q
DD
GS
D
gs
gd
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
32
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 8 A, V
= 8 A, V
= 0 V
⎯
−1.7
⎯
V
DSF
DR
DR
GS
t
= 0 V,
1200
10
ns
μC
rr
GS
dI /dt = 100 A/μs
DR
Q
⎯
rr
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K8A50D
Part No. (or abbreviation code)
Lot No.
Note 4
2
2013-11-01
TK8A50D
I
– V
DS
I
– V
DS
D
D
10
8
16
12
8
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
10
9
10
Tc = 25°C
8.75
PULSE TEST
PULSE TEST
8
8.5
7.75
8.25
8
6
7.5
7.25
7
4
7.5
7
4
6.5
2
0
V
= 6.5V
GS
40
V
= 6 V
GS
0
0
2
4
6
8
10
0
10
20
30
50
DRAIN-SOURCE VOLTAGE
V
(V)
DS
DRAIN-SOURCE VOLTAGE
V
(V)
DS
I
D
– V
V
– V
DS GS
GS
20
10
8
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
= 20 V
V
DS
PULSE TEST
PULSE TEST
16
12
I
= 8 A
D
6
4
8
4
0
4
2
100
Tc = −55°C
25
2
0
0
4
8
12
16
20
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪Y ⎪ – I
fs
R
– I
DS (ON) D
D
10
10
COMMON SOURCE
= 20 V
V
DS
PULSE TEST
Tc = −55°C
25
100
1
1
V
= 10 V, 15 V
GS
COMMON SOURCE
Tc = 25°C
PULSE TEST
0.1
0.1
0.1
0.1
1
10
100
1
10
DRAIN CURRENT
I
(A)
DRAIN CURRENT
I
(A)
D
D
3
2013-11-01
TK8A50D
R
– Tc
I
– V
DS
DS (ON)
DR
10
3.0
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
V
= 10 V
GS
PULSE TEST
PULSE TEST
2.5
2.0
1.5
I
= 8 A
D
1
4
1.0
0.5
0
2
10
5
3
1
V
= 0, −1 V
GS
0.1
−1.2
−80
−40
0
40
80
120
160
0
−0.2
−0.4
−0.6
−0.8
−1.0
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
CAPACITANCE – V
V
– Tc
th
DS
10000
1000
100
10
5
4
C
C
iss
3
2
oss
COMMON SOURCE
= 0 V
COMMON SOURCE
= 10 V
V
1
0
GS
C
rss
V
DS
= 1 mA
f = 1 MHz
Tc = 25°C
I
D
PULSE TEST
1
0.1
1
10
100
−80
−40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
P
– Tc
D
60
40
20
16
500
V
DS
400
300
200
V
= 100 V
DD
400
12
8
200
COMMON SOURCE
= 8 A
20
V
GS
I
D
Tc = 25°C
100
0
4
0
PULSE TEST
0
0
40
80
120
160
0
5
10
15
20
25
30
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE
Q
g
(nC)
4
2013-11-01
TK8A50D
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.05
0.02
0.1
P
DM
t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
R
= 3.125°C/W
th (ch-c)
0.001
10 μ
100 μ
1 m
10 m
100 m
1
10
PULSE WIDTH
t
(s)
w
SAFE OPERATING AREA
E
– T
ch
AS
100
10
200
I
max (pulsed) *
D
160
120
80
100 μs *
1 ms *
I
max (continuous)
D
DC operation
Tc = 25°C
1
40
0.1
0
25
50
75
100
125
150
*: SINGLE NONREPETITIVE
PULSE Tc = 25°C
0.01
0.001
CHANNEL TEMPEATURE (INITIAL)
(°C)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
T
ch
V
max
DSS
B
VDSS
10
100
1000
1
15 V
I
AR
DRAIN-SOURCE VOLTAGE
V
(V)
DS
−15 V
V
V
DD
DS
B
TEST CIRCUIT
WAVEFORM
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
= 25 Ω
= 90 V, L = 4.4 mH
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
V
B
VDSS
DD
5
2013-11-01
TK8A50D
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
6
2013-11-01
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