TLP332(TP5) [TOSHIBA]
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-8;
| 型号： | TLP332(TP5) |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-8 输出元件 光电 |
| 文件： | 总8页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP331,TLP332
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP331,TLP332
Office Machine
Unit in mm
Household Use Equipment
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide
infrared emitting diode optically coupled to a photo−transistor in a six
lead plastic DIP package.
This photocoupler provides the unique feature of high current transfer
ratio at both low output voltage and low input current. This makes it
ideal for use in low power logic circuits, telecommunications equipment
and portable electronics isolation applications.
TLP332 is no−base internal connection for high−EMI environments.
•
•
•
•
Collector−emitter voltage: 55V (min.)
Isolation voltage: 5000Vrms (min.)
UL recognized: UL1577, file no. E67349
Current transfer ratio
TOSHIBA
11−7A8
Weight: 0.4 g
Current Transfer Ratio (min.)
Marking
Of
Classi−
Fication
Classi−
fication
Ta = 25°C
= 1mA = 0.5mA
Ta = −25~75°C
I = 1mA
F
Pin Configurations (top view)
I
V
I
F
F
CE
(*)
= 0.5V
V
= 1.5V
V
= 0.5V
CE
CE
TLP331
TLP332
Rank BV
Standard
200%
100%
100%
50%
100%
50%
BV
BV, blank
1
2
6
5
4
1
2
6
5
4
(*) Ex. Standard: TLP331
Rank BV: TLP331(BV)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP331(BV): TLP331
3
3
1: ANODE
2: CATHODE
3: NC
1: ANODE
2: CATHODE
3: NC
4: EMITTER
5: COLLECTOR
6: BASE
4: EMITTER
5: COLLECTOR
6: NC
1
2007-10-01
TLP331,TLP332
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
−0.7
1
mA
F
Forward current derating (Ta ≥ 39°C)
Peak forward current (100μs pulse, 100pps)
Reverse Voltage
ΔI /°C
F
mA / °C
I
A
V
FP
V
5
R
Junction temperature
T
125
55
80
7
°C
V
j
Collector−emitter voltage
Collector−base voltage (TLP331)
Emitter−collector voltage
V
V
V
CEO
CBO
ECO
V
V
Emitter−base voltage (TLP331)
V
7
V
EBO
Collector current
I
50
mA
C
Power dissipation
P
150
−1.5
mW
mW / °C
°C
C
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
ΔP / °C
C
T
125
j
Storage temperature range
T
−55~125
−55~100
260
°C
stg
opr
Operating temperature range
T
°C
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta≥25°C)
Isolation voltage (AC, 1min., RH ≤ 60%)
T
°C
sol
P
250
mW
T
P /°C
T
−2.5
mW / °C
Vrms
(Note 1)
BV
5000
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Symbol
Min.
Typ.
Max.
Unit
V
―
—
5
1.6
1
25
25
10
75
V
CC
Forward current
I
mA
mA
°C
F
Collector current
I
―
C
Operating temperature
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP331,TLP332
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= 10mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
―
1.15
―
1.3
10
―
V
F
Reverse current
Capacitance
I
V
= 5V
R
μA
pF
R
C
V = 0, f = 1MHz
―
30
T
Collector−emitter
breakdown voltage
V
V
V
V
I
I
I
I
= 0.5mA
= 0.1mA
= 0.1mA
= 0.1mA
55
7
―
―
―
―
―
―
―
―
V
V
V
V
(BR)CEO
(BR)ECO
(BR)CBO
(BR)EBO
C
E
C
E
Emitter−collector
breakdown voltage
Collector−base breakdown voltage
(TLP331)
80
7
Emitter−base breakdown voltage
(TLP331)
V
V
V
= 24V
―
―
10
2
100
50
nA
CE
CE
CE
Collector dark current
I
CEO
= 24V, Ta = 85°C
μA
Collector dark current
(TLP331)
= 24V, Ta = 85°C
= 1MΩ
I
―
―
0.5
0.1
10
μA
CER
R
BE
Collector dark current
(TLP331)
I
V
V
= 10V
―
nA
CBO
CB
DC forward current gain
(TLP331)
h
= 5V, I = 0.5mA
―
―
1000
12
―
―
―
FE
CE
CE
C
Capacitance (collector to emitter)
C
V = 0 , f = 1MHz
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
%
100
200
50
―
―
―
―
10
—
0.2
―
1200
1200
―
I
I
= 1mA, V = 0.5V
CE
F
F
Current transfer ratio
I / I
C F
Rank BV
= 0.5mA, V
= 1.5V
CE
Rank BV
Low input CTR
I
/ I
%
C
V
F(low)
100
―
―
Base photo−current (TLP331)
I
I
I
= 1mA, V = 5V
CB
―
μA
PB
F
= 0.5mA I = 1mA
―
0.4
―
C
F
Collector−emitter
V
―
CE(sat)
I
= 1mA I = 1mA
F
C
saturation voltage
Rank BV
―
0.4
Coupled Electrical Characteristics (Ta = 25~75°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
%
50
100
―
―
―
―
―
―
―
I
I
= 1mA, V = 0.5V
CE
F
F
Current transfer ratio
I / I
C F
Rank BV
50
= 0.5mA, V
= 1.5V
CE
Rank BV
Low input CTR
I
/ I
F(low)
%
C
―
100
3
2007-10-01
TLP331,TLP332
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0, f = 1MHz
S
Min.
Typ.
Max.
Unit
Capacitance (input to output)
Isolation resistance
C
R
V
―
5×1010
5000
―
0.8
1014
―
―
―
―
―
pF
S
S
V = 500V
Ω
AC, 1 minute
―
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Rise time
Fall time
t
―
―
―
―
―
―
―
―
―
―
8
8
―
―
―
―
―
―
―
―
―
―
r
V
= 10V
CC
= 2mA
L
t
f
I
μs
C
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Turn−on time
Storage time
Turn−off time
t
t
10
8
R = 100Ω
on
off
t
10
50
300
12
30
100
ON
R = 4.7kΩ
R
V
(Fig.1)
(Fig.1)
L
BE
CC
= OPEN
= 5V, I = 1.6mA
μs
μs
t
S
F
t
OFF
t
ON
R = 4.7kΩ
R
V
L
BE
CC
= 470kΩ (TLP331)
= 5V, I = 1.6mA
t
S
F
t
OFF
Fig. 1 Switching time test circuit
I
F
V
V
I
CC
F
R
L
t
S
V
CC
4.5V
0.5V
CE
V
CE
R
BE
t
t
OFF
ON
4
2007-10-01
TLP331,TLP332
I
– Ta
P
– Ta
C
F
100
200
160
120
80
60
80
40
0
40
20
0
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
I
– V
F
FP
R
F
5000
3000
1000
Pulse width≦100μs
Ta = 25°C
500
300
Ta = 25°C
1000
100
500
300
50
30
100
10
50
30
5
3
1
0.6
10
3
10-3
3
10-2
3
10-1
3
100
0.8
1.0
1.2
1.4
1.6
1.8
DUTY CYCLE RATIO
D
R
Forward voltage
V
F
(V)
ΔV /ΔTa – I
I – V
FP FP
F
F
-3.2
-2.8
-2.4
1000
500
300
100
-2.0
-1.6
-1.2
-0.8
-0.4
50
30
10
Pulse width≦10μs
5
3
Repetitive frequency
= 100Hz
Ta = 25°C
1
0.6
0.1
0.3 0.5
1
3
5
10
30 50
1.0
1.4
1.8
2.2
2.6
Forward current
I
F
(mA)
Pulse forward voltage
V
(V)
FP
5
2007-10-01
TLP331,TLP332
I /I – I
C F
I
– V
F
C
CE
I
4.0
3.5
3.0
2.5
1000
Ta = 25°C
=1.0mA
F
500
300
0.8mA
100
50
30
2.0
1.5
1.0
Ta = 25°C
V
V
V
= 5V
CE
CE
CE
= 1.5V
= 0.5V
0.6mA
0.5mA
0.4mA
10
0.1
0.3
0.5
1
3
10
5
Forward current
I
F
(mA)
0.5
0
0.2mA
I
C
– I
F
50
30
0.1
0.3
0.5
1
10
3
5
Ta = 25°C
V
V
V
= 5V
CE
CE
CE
Collector-emitter voltage
V
(V)
CE
= 1.5V
= 0.5V
I
– Ta
C
30
10
V
V
= 1.5V
= 0.5V
CE
CE
10
I =2mA
F
5
3
5
3
1mA
1
0.5mA
0.5
0.3
1
0.5
0.3
0.1
0.2mA
0.05
0.03
0.1
0.05
0.03
0.01
0.1
0.3
0.5
1
3
5
10
-20
0
20
40
60
80
100
Forward current
I
F
(mA)
Ambient temperature Ta (°C)
6
2007-10-01
TLP331,TLP332
I
– Ta
Switching Time – R
L
D
101
5000
3000
Ta = 25°C
= 1.6mA
I
V
=24V
F
CE
V
= 5V
CC
10V
100
10-1
10-2
5V
1000
500
300
t
OFF
100
50
30
t
S
10-3
t
ON
10-4
10
5
3
10-5
0
20
40
60
120
1
3
5
10
30
50
100
80
100
Ambient temperature Ta (°C)
Load resistance
R
L
(kΩ)
7
2007-10-01
TLP331,TLP332
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-10-01
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